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BZT55C51 L1

BZT55C51 L1

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    SOD80

  • 描述:

    台半 MINI MELF Zzk: 700Ω Pd: 500mW Izk: 0.5mA

  • 详情介绍
  • 数据手册
  • 价格&库存
BZT55C51 L1 数据手册
BZT55C2V4 thru BZT55C75 Taiwan Semiconductor Small Signal Product 5% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection: 2.4V to 75V - VZ Tolerance Selection of ±5% - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - All external surfaces are corrosion resistant a leads are readily solderable QUADRO Mini-MELF (LS34) Hermetically Sealed Glass MECHANICAL DATA - Case: QUADRO Mini-MELF Package (JEDEC DO-213) - High temperature soldering guaranteed: 270oC/10s - Polarity: Indicated by cathode band - Weight: 29 ± 2.5mg MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER Power Dissipation Forward Voltage IF = 10 mA Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range (Note 1) SYMBO VALUE UNIT PD 500 mW VF 1 RθJA 500 TJ, TSTG - 65 to +175 V o C/W o C Note1: Valid provided that electrodes are kept at ambient temperature Zener I vs. V Characteristics Document Number: DS_S1408007 VBR : Voltage at IZK IZK : Test current for voltage VBR ZZK : Dynamic impedance at IZK IZT : Test current for voltage VZ VZ : Voltage at current IZT ZZT : Dynamic impedance at IZT IZM : Maximum steady state current VZM : Voltage at IZM Version: F14 BZT55C2V4 thru BZT55C75 Taiwan Semiconductor Small Signal ELECTRICAL CHARACTERISTICS ( TA= 25oC unless otherwise noted ) VZ @ IZT (Volt) Nom Min Max IZT (mA) BZT55C2V4 2.4 2.28 2.56 5 85 1 600 50 1 BZT55C2V7 2.7 2.51 2.89 5 85 1 600 10 1 BZT55C3V0 3.0 2.8 3.2 5 85 1 600 4 1 BZT55C3V3 3.3 3.1 3.5 5 85 1 600 2 1 BZT55C3V6 3.6 3.4 3.8 5 85 1 600 2 1 BZT55C3V9 3.9 3.7 4.1 5 85 1 600 2 1 BZT55C4V3 4.3 4.0 4.6 5 75 1 600 1 1 BZT55C4V7 4.7 4.4 5.0 5 60 1 600 0.5 1 BZT55C5V1 5.1 4.8 5.4 5 35 1 550 0.1 1 BZT55C5V6 5.6 5.2 6.0 5 25 1 450 0.1 1 BZT55C6V2 6.2 5.8 6.6 5 10 1 200 0.1 2 BZT55C6V8 6.8 6.4 7.2 5 8 1 150 0.1 3 BZT55C7V5 7.5 7.0 7.9 5 7 1 50 0.1 5 BZT55C8V2 8.2 7.7 8.7 5 7 1 50 0.1 6.2 BZT55C9V1 9.1 8.5 9.6 5 10 1 50 0.1 6.8 BZT55C10 10 9.4 10.6 5 15 1 70 0.1 7.5 BZT55C11 11 10.4 11.6 5 20 1 70 0.1 8.2 BZT55C12 12 11.4 12.7 5 20 1 90 0.1 9.1 BZT55C13 13 12.4 14.1 5 26 1 110 0.1 10 BZT55C15 15 13.8 15.6 5 30 1 110 0.1 11 BZT55C16 16 15.3 17.1 5 40 1 170 0.1 12 BZT55C18 18 16.8 19.1 5 50 1 170 0.1 13 BZT55C20 20 18.8 21.1 5 55 1 220 0.1 15 BZT55C22 22 20.8 23.3 5 55 1 220 0.1 16 BZT55C24 24 22.8 25.6 5 80 1 220 0.1 18 BZT55C27 27 25.1 28.9 5 80 1 220 0.1 20 BZT55C30 30 28 32 5 80 1 220 0.1 22 BZT55C33 33 31 35 5 80 1 220 0.1 24 BZT55C36 36 34 38 5 80 1 220 0.1 27 BZT55C39 39 37 41 2.5 90 0.5 500 0.1 28 BZT55C43 43 40 46 2.5 90 0.5 600 0.1 32 BZT55C47 47 44 50 2.5 110 0.5 700 0.1 35 BZT55C51 51 48 54 2.5 125 0.5 700 0.1 38 BZT55C56 56 52 60 2.5 135 0.5 1,000 0.1 42 BZT55C62 62 58 66 2.5 150 0.5 1,000 0.1 47 BZT55C68 68 64 72 2.5 160 0.5 1,000 0.1 51 BZT55C75 75 70 79 2.5 170 0.5 1,000 0.1 56 Part Number ZZT @ IZT (Ω) Max IZK (mA) ZZK @ IZK (Ω) Max IR @ VR(μA) Max VR (V) Notes: 1. The Zener Voltage (VZ) is tested under pulse condition of 10ms. 2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±5%. 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative. 4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current(IZT or IZK) is superimposed to IZT or IZK. Document Number: DS_S1408007 Version: F14 BZT55C2V4 thru BZT55C75 Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) Fig. 2 Zener Breakdown Characteristics Fig. 1 Typical Forward Characteristics 300 1000 Zener Current (mA) Forward Current (mA) TA=25oC 250 TA=25oC 100 10 200 150 100 50 0 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 1 2 3 4 6 7 8 9 10 11 12 Zener Voltage (V) Forward Voltage (V) Fig. 4 Admissible Power Dissipation Curve Fig. 3 Zener Breakdown Characteristics 600 Power Dissipation (mW) 100 10 Zener Current (mA) 5 1 0.1 500 400 300 200 100 0 0.01 15 25 35 45 55 65 75 0 85 50 100 Ambient Temperature Zener Voltage (V) Fig. 5 Typical Capacitance 150 200 (oC) Fig. 6 Effect of Zener Voltage on Impedence 1000 1000 Dynamic Impedence(Ohm) Capacitance (pF) IZ=1mA 1V Bias 100 10 Bias at 50% of VZ (Nom) 1 100 10 IZ=5mA IZ=20mA 1 1 10 Zener Voltage (V) Document Number: DS_S1408007 100 1 10 100 Zener Voltage (V) Version: F14 BZT55C2V4 thru BZT55C75 Taiwan Semiconductor Small Signal Product ORDERING INFORMATION PART NO. MANUFACTURE CODE BZT55Cxxx (Note1) PACKING CODE GREEN COMPOUND L0 (Note 2) PACKAGE PACKING Quadro Mini-MELF (Glass Seal) 10K / 13" Reel Quadro Mini-MELF (Glass Seal) 2.5K / 7" Reel CODE G L1 Note 1: "xxx" defines voltage from 2.4V (BZT55C2V4) to 75V (BZT55C75) Note 2: Manufacture special control, if empty means no special control requirement. EXAMPLE PREFERRED P/N PART NO. BZT55C75 L0G BZT55C75 BZT55C75-L0 L0G BZT55C75 BZT55C75-B0 L0G BZT55C75 MANUFACTURE CODE PACKING CODE GREEN COMPOUND CODE DESCRIPTION L0 G Green compound L0 L0 G Green compound B0 L0 G Green compound PACKAGE OUTLINE DIMENSION C DIM. B D Unit (mm) Unit (inch) Min Max Min Max A 3.30 3.70 0.130 0.146 B 1.40 1.60 0.055 0.063 C 0.20 0.45 0.008 0.018 1.8 TYP. 0.071 TYP. Unit (mm) Unit (inch) Typ. Typ. A 1.25 0.049 B 2.00 0.079 C 2.50 0.098 D 5.00 0.197 D A SUGGEST PAD LAYOUT DIM. Document Number: DS_S1408007 Version: F14 BZT55C2V4 thru BZT55C75 Taiwan Semiconductor Small Signal Product Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_S1408007 Version: F14
BZT55C51 L1
物料型号:BZT55C2V4至BZT55C75,由台湾半导体生产。

器件简介:这是一系列小型信号产品中的5%容差SMD稳压二极管,具有以下特点: - 稳压电压范围宽:2.4V至75V - 稳压电压容差选择±5% - 湿度敏感度等级1 - 铅锡(Sn)镀层,镍(Ni)底层 - 无铅且符合RoHS标准 - 所有外表面耐腐蚀,引脚易于焊接

引脚分配:文档中未明确说明引脚分配,但通常稳压二极管有两个引脚,阳极和阴极。

参数特性:包括最大额定值和电气特性,如功耗(Po)为500毫瓦,正向电压(VF)为1伏,热阻(ROJA)为500摄氏度/瓦特,结温和储存温度范围为-65至+175摄氏度。

功能详解:文档提供了稳压二极管的I-V特性曲线,包括正向区域、击穿区域和漏电流区域的描述,以及稳压二极管的动态阻抗和电容特性。

应用信息:文档中未明确提供应用信息,但稳压二极管通常用于电路中稳定电压,防止电压波动。

封装信息:采用QUADRO Mini-MELF封装(JEDEC DO-213),高温焊接保证270摄氏度/10秒,极性通过阴极带表示,重量为29±2.5毫克。

订购信息:提供了订购时使用的零件编号、制造商代码、包装代码和绿色化合物代码,以及包装方式,例如10K/13英寸卷或2.5K/7英寸卷。

封装尺寸:提供了QUADRO Mini-MELF封装的尺寸,包括最小和最大尺寸。

建议的焊盘布局:提供了建议的焊盘布局尺寸,以确保焊接的可靠性。
BZT55C51 L1 价格&库存

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