PMXB56EN

PMXB56EN 30 V, N-channel Trench MOSFET 27 October 2020 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction Very low Drain-Source on-state resistance RDSon = 49 mΩ Very fast switching 3. Applications • • • • Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current - - 3.2 A - 49 55 mΩ VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = 10 V; ID = 3.2 A; Tj = 25 °C 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . PMXB56EN Nexperia 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain 4 D drain Simplified outline Graphic symbol D 1 4 G 3 S 017aaa253 2 Transparent top view DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package PMXB56EN Name Description Version DFN1010D-3 plastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 3 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm body SOT1215 7. Marking Table 4. Marking codes Type number Marking code PMXB56EN 01 10 10 MARKING CODE (EXAMPLE) READING DIRECTION YEAR DATE CODE VENDOR CODE PIN 1 INDICATION MARK MARK-FREE AREA READING EXAMPLE: 11 01 10 Fig. 1. aaa-008041 DFN1010D-3 (SOT1215) binary marking code description PMXB56EN Product data sheet All information provided in this document is subject to legal disclaimers. 27 October 2020 © Nexperia B.V. 2020. All rights reserved 2 / 14 PMXB56EN Nexperia 30 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - 3.2 A VGS = 10 V; Tamb = 100 °C [1] - 2.8 A - 15 A [2] - 0.4 W [1] - 1.07 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C - 8.33 W Tj junction temperature Tsp = 25 °C -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 1 A Source-drain diode IS [1] [2] source current Tamb = 25 °C [1] 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 2. 017aaa124 120 - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMXB56EN Product data sheet 0 - 75 175 Fig. 3. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 27 October 2020 25 © Nexperia B.V. 2020. All rights reserved 3 / 14 PMXB56EN Nexperia 30 V, N-channel Trench MOSFET aaa-009040 102 lD (A) tp = 10 µs 10 tp = 100 µs 1 tp = 1 ms DC; Tamb = 25 °C; 6 cm2 tp = 10 ms DC; Tsp = 25 °C 10-1 tp = 100 ms 10-2 10-1 1 10 102 VDS (V) IDM = single pulse Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from in free air junction to ambient Rth(j-sp) [1] [2] Conditions thermal resistance from junction to solder point Min Typ Max Unit [1] - 271 312 K/W [2] - 102 117 K/W - 10 15 K/W Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . aaa-008918 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.5 0.25 0.75 0.33 0.1 10 0.2 0.05 0.02 0 0.01 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMXB56EN Product data sheet All information provided in this document is subject to legal disclaimers. 27 October 2020 © Nexperia B.V. 2020. All rights reserved 4 / 14 PMXB56EN Nexperia 30 V, N-channel Trench MOSFET 103 aaa-008919 duty cycle = 1 0.75 0.5 0.33 Zth(j-a) (K/W) 102 10 0.02 0.01 0 1 10-3 0.25 0.2 0.1 0.05 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 6. 1 10 102 tp (s) 2 103 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMXB56EN Product data sheet All information provided in this document is subject to legal disclaimers. 27 October 2020 © Nexperia B.V. 2020. All rights reserved 5 / 14 PMXB56EN Nexperia 30 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS=VGS; Tj = 25 °C 1 1.5 2 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -100 nA RDSon drain-source on-state resistance VGS = 10 V; ID = 3.2 A; Tj = 25 °C - 49 55 mΩ VGS = 10 V; ID = 2.8 A; Tj = 150 °C - 77 87 mΩ VGS = 4.5 V; ID = 3.2 A; Tj = 25 °C - 56 65 mΩ gfs forward transconductance VDS = 10 V; ID = 3.2 A; Tj = 25 °C - 13 - S RG gate resistance f = 1 MHz; Tj = 25 °C - 2.3 - Ω VDS = 15 V; ID = 3.2 A; VGS = 10 V; Tj = 25 °C - 3.6 6.3 nC - 0.5 - nC - 0.4 - nC - 209 - pF - 50 - pF - 17 - pF - 3 - ns - 12 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 11 - ns tf fall time - 2 - ns - 0.7 1.2 V VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 15 V; ID = 3.2 A; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage PMXB56EN Product data sheet IS = 1 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 27 October 2020 © Nexperia B.V. 2020. All rights reserved 6 / 14 PMXB56EN Nexperia 30 V, N-channel Trench MOSFET aaa-009041 12 5.0 V aaa-009043 10-2 3.5 V ID (A) ID (A) 10-3 3.2 V min 8 typ max 3.0 V 10-4 4 10-5 2.6 V 0 Fig. 7. 2.8 V VGS = 2.5 V 0 1 2.7 V 2 3 VDS (V) 10-6 4 0 1.0 1.5 2.0 2.5 VGS (V) Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 8. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-009044 300 2.5 V 2.8 V 3.1 V RDSon (mΩ) 200 200 4.5 V 100 aaa-009045 300 3.5 V RDSon (mΩ) Tj = 150 °C 100 Tj = 25 °C VGS = 10 V 0 0 4 8 ID (A) 0 12 Tj = 25 °C Fig. 9. 0.5 Product data sheet 2 4 6 8 10 VGS (V) ID = 3.2 A Drain-source on-state resistance as a function of drain current; typical values PMXB56EN 0 Fig. 10. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 27 October 2020 © Nexperia B.V. 2020. All rights reserved 7 / 14 PMXB56EN Nexperia 30 V, N-channel Trench MOSFET aaa-009046 12 aaa-009047 1.8 a ID (A) 1.5 8 1.2 Tj = 150 °C 4 0.9 Tj = 25 °C 0 0 1 2 3 4 VGS (V) 0.6 -60 5 0 60 120 Tj (°C) 180 VDS > ID × RDSon Fig. 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig. 12. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-009048 3 aaa-009049 103 C (pF) VGS(th) (V) max 2 Ciss 102 Coss typ min 1 0 -60 0 60 120 Tj (°C) 1 180 Fig. 13. Gate-source threshold voltage as a function of junction temperature Product data sheet 10-1 1 10 VDS (V) 102 f = 1 MHz; VGS = 0 V ID = 0.25 mA; VDS = VGS PMXB56EN Crss 10 Fig. 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 27 October 2020 © Nexperia B.V. 2020. All rights reserved 8 / 14 PMXB56EN Nexperia 30 V, N-channel Trench MOSFET aaa-009050 10 VGS (V) VDS 8 ID 6 VGS(pl) 4 VGS(th) VGS 2 0 QGS2 QGS1 0 1 2 3 QG (nC) QGS 4 QGD QG(tot) ID = 3.2 A; VDS = 15 V; Tamb = 25 °C 003aaa508 Fig. 16. Gate charge waveform definitions Fig. 15. Gate-source voltage as a function of gate charge; typical values aaa-009052 4 IS (A) 3 Tj = 150 °C 2 Tj = 25 °C 1 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V Fig. 17. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 18. Duty cycle definition PMXB56EN Product data sheet All information provided in this document is subject to legal disclaimers. 27 October 2020 © Nexperia B.V. 2020. All rights reserved 9 / 14 PMXB56EN Nexperia 30 V, N-channel Trench MOSFET 12. Package outline DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body: 1.1 x 1.0 x 0.37 mm SOT1215 visible depend upon used manufacturing technology (2x) solderable lead end, protrusion max. 0.02 mm (3x) pin 1 index area visible depend upon used manufacturing technology (4x) e b (2x) 1 2 L (2x) E E1 e1 L1 D A1 3 b1 A D1 0 1 mm scale Dimensions (mm are the original dimensions) Unit mm A A1 b b1 D D1 E E1 e e1 min 0.34 0.22 0.245 1.05 0.87 0.95 0.16 nom 0.37 0.25 0.275 1.10 0.90 1.00 0.19 0.75 max 0.40 0.04 0.30 0.325 1.15 0.95 1.05 0.24 0.1 L L1 0.17 0.195 0.20 0.225 0.25 0.275 Note 1. Dimension A is including plating thickness. Outline version sot1215_po References IEC JEDEC JEITA European projection Issue date 13-03-05 13-03-06 SOT1215 Fig. 19. Package outline DFN1010D-3 (SOT1215) PMXB56EN Product data sheet All information provided in this document is subject to legal disclaimers. 27 October 2020 © Nexperia B.V. 2020. All rights reserved 10 / 14 PMXB56EN Nexperia 30 V, N-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering of DFN1010D-3 package SOT1215 1.2 0.45 (2x) 0.3 1.1 0.35 (2x) 0.4 0.25 (2x) 0.75 0.3 0.5 1.5 1.4 0.4 0.5 0.4 0.3 0.5 1.3 0.4 0.3 0.4 0.5 1.3 solder land solder land plus solder paste occupied area solder resist Dimensions in mm Issue date 12-11-23 13-03-06 sot1215_fr Fig. 20. Reflow soldering footprint for DFN1010D-3 (SOT1215) PMXB56EN Product data sheet All information provided in this document is subject to legal disclaimers. 27 October 2020 © Nexperia B.V. 2020. All rights reserved 11 / 14 PMXB56EN Nexperia 30 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMXB56EN v.4 20201027 Product data sheet - PMXB56EN v.3 Modifications: • • The format of this data sheet has been redesigned to comply with the identity guidelines of Nexperia. Legal texts have been adapted to the new company name where appropriate. PMXB56EN v.3 20170111 Product data sheet - PMXB56EN v.2 PMXB56EN v.2 20140430 Product data sheet - PMXB56EN v.1 PMXB56EN v.1 20130925 Product data sheet - - PMXB56EN Product data sheet All information provided in this document is subject to legal disclaimers. 27 October 2020 © Nexperia B.V. 2020. All rights reserved 12 / 14 PMXB56EN Nexperia 30 V, N-channel Trench MOSFET 15. Legal information injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the internet at https://www.nexperia.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. 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Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal PMXB56EN Product data sheet Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 27 October 2020 © Nexperia B.V. 2020. All rights reserved 13 / 14 PMXB56EN Nexperia 30 V, N-channel Trench MOSFET Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 6 11. Test information.......................................................... 9 12. Package outline........................................................ 10 13. Soldering................................................................... 11 14. Revision history........................................................12 15. Legal information......................................................13 © Nexperia B.V. 2020. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 27 October 2020 PMXB56EN Product data sheet All information provided in this document is subject to legal disclaimers. 27 October 2020 © Nexperia B.V. 2020. All rights reserved 14 / 14