TSD30H200CW MNG

TSD30H100CW – TSD30H200CW Taiwan Semiconductor 30A, 100V - 200V Trench Schottky Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ high efficiency High forward surge capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 30 A VRRM 100 - 200 V IFSM 200 A TJ MAX 150 °C 2 Package TO-263AB (D PAK) Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● 2 Case: TO-263AB (D PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.60g (approximately) 2 TO-263AB (D PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device Repetitive peak reverse voltage VRRM Reverse voltage, total rms value VR(RMS) Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Critical rate of rise of off-state voltage TSD30H TSD30H TSD30H TSD30H UNIT 100CW 120CW 150CW 200CW TSD30H TSD30H TSD30H TSD30H 100CW 120CW 150CW 200CW 100 120 150 200 V 70 84 105 140 V IF 30 A IFSM 200 A dv/dt 10,000 V/µs Junction temperature TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: E2103 TSD30H100CW – TSD30H200CW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 2.8 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TSD30H100CW TSD30H120CW TSD30H150CW Forward voltage per (1) diode TSD30H200CW VF TSD30H100CW TSD30H120CW TSD30H150CW Reverse current @ (2) rated VR per diode IF = 15A, TJ = 25°C TSD30H200CW TSD30H100CW TSD30H120CW TSD30H150CW TSD30H200CW TSD30H100CW TSD30H120CW TSD30H150CW TSD30H200CW IF = 15A, TJ = 125°C TYP MAX UNIT 0.69 0.78 V 0.75 0.84 V 0.81 0.90 V 0.84 0.92 V 0.61 0.68 V 0.64 0.73 V 0.68 0.77 V 0.70 0.79 V - 250 µA - 150 µA - 35 mA - 20 mA TJ = 25°C IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) TSD30HxCW PACKAGE 2 TO-263AB (D PAK) PACKING 800 / Tape & Reel Notes: 1. "x" defines voltage from 100V(TSD30H100CW) to 200V(TSD30H200CW) 2 Version: E2103 TSD30H100CW – TSD30H200CW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 TSD30H100CW TSD30H120CW TSD30H100CW CAPACITANCE (pF) 30 TSD30H150CW TSD30H200CW 15 1000 TSD30H120CW 100 TSD30H150CW 10 0 50 75 100 125 0.1 150 1 ° CASE TEMPERATURE ( C) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 TJ=150°C 10 TJ=125°C 1 TJ=100°C 0.1 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 10010 TSD30H100CW UF1DLW 10 1 TJ=125°C TJ=150°C TJ=125°C TJ=100°C 0.1 0.01 TJ=25°C 0.01 0.001 00.3 INSTANTANEOUS FORWARD CURRENT (A) TSD30H120CW TJ=150°C TJ=125°C TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 0.2 0.5 0.40.6 0.4 0.6 0.8 0.80.9 0.7 11 1.1 1.2 1.1 1.2 Fig.6 Typical Forward Characteristics 100 0.1 Pulse width 300μs 1% duty cycle Pulse width FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics 1 TJ=25°C 1 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics TSD30H100CW 10 (A) 25 INSTANTANEOUS REVERSE CURRENT (mA) TSD30H200CW f=1.0MHz Vsig=50mVp-p 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10010 TSD30H120CW UF1DLW 10 1 TJ=125°C TJ=125°C TJ=150°C TJ=25°C 1 0.1 (A) AVERAGE FORWARD CURRENT (A) 45 TJ=100°C 0.1 0.01 0.01 0.001 TJ=25°C Pulse width 300μs 1% duty cycle Pulse width 00.3 0.2 0.5 0.4 0.4 0.6 0.6 0.8 0.8 0.7 0.9 11 FORWARD VOLTAGE (V) 3 Version: E2103 TSD30H100CW – TSD30H200CW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) 1 TJ=150°C TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 20 30 40 50 60 70 80 90 100 10010 TSD30H150CW UF1DLW 10 1 TJ=125°C TJ=125°C TJ=150°C 1 0.1 TJ=25°C TJ=100°C 0.1 0.01 TJ=25°C Pulse width 300μs 1% duty cycle Pulse width 0.01 0.001 00.3 0.2 0.5 0.4 0.4 0.6 0.6 0.8 0.8 0.7 0.9 11 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.9 Typical Reverse Characteristics Fig.10 Typical Forward Characteristics 10 TSD30H200CW TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 0.0001 TJ=25°C 0.00001 10 20 30 40 50 60 70 80 90 100 (A) TSD30H150CW 1.1 1.2 1.1 1.2 10010 TSD30H200CW 10 1 1 0.1 UF1DLW TJ=125°C TJ=125°C TJ=150°C 0.1 0.01 0.01 0.001 0 0.3 TJ=25°C (A) INSTANTANEOUS FORWARD CURRENT (A) 10 10 INSTANTANEOUS REVERSE CURRENT (mA) Fig.8 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.7 Typical Reverse Characteristics TJ=100°C TJ=25°C Pulse width 300μs 1% duty cycle Pulse width 0.2 0.4 0.5 0.4 0.6 0.6 0.7 0.8 0.8 0.9 1 1 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 4 Version: E2103 TSD30H100CW – TSD30H200CW Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS 2 TO-263AB (D PAK) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: E2103 TSD30H100CW – TSD30H200CW Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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