BLF647P,112

BLF647P Broadband power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Application information RF performance at Th = 25 C in a common source test circuit. PL(AV) PL(M) Gp D Test signal f VDS IDq IMD3 (MHz) (V) (A) (W) (W) (dB) (%) (dBc) Pulsed, class-B 1300 32 0.1 - 200 18 70 - CW, class-B 1300 32 0.1 200 - 18 70 - 2-tone, class-AB f1 = 1299.95; f2 = 1300.05 32 0.7 75 - 19 48 33 1.2 Features and benefits        Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Communication transmitter applications in the HF to 1500 MHz frequency range  Industrial applications in the HF to 1500 MHz frequency range BLF647P Broadband power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 Simplified outline 1 Graphic symbol 1 2 3 source 5 5 [1] 3 4 4 2 sym117 [1] Connected to flange 3. Ordering information Table 3. Ordering information Type number BLF647P Package Name Description Version - flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1121A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Min Max Unit drain-source voltage - 65 V VGS gate-source voltage 0.5 +11 V Tstg storage temperature 65 +150 C - 225 C [1] junction temperature Tj [1] Conditions Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF calculator. 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-c) [1] BLF647P#3 Product data sheet Conditions thermal resistance from junction to case Typ Tcase = 80 C; PL = 200 W [1] Unit 0.34 K/W Rth(j-c) is measured under RF conditions. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 14 BLF647P Broadband power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage Conditions Min Typ - Max Unit VGS = 0 V; ID = 1.1 mA 65 VGS(th) gate-source threshold voltage VDS = 28 V; ID = 110 mA 1.55 1.8 2.25 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 20 V 18.1 20 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 20 V; ID = 5500 mA - 7.6 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 3.85 A - 140 - m - - V Table 7. AC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz - 78 - pF Coss output capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz - 30 - pF Crs feedback capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz - 1.3 - pF Table 8. RF characteristics Test signal: CW; f = 1300 MHz; RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL = 200 W 17 18 - dB D drain efficiency PL = 200 W 66 70 - % 7. Test information 7.1 Ruggedness in class-AB operation The BLF647P is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; f = 1300 MHz at rated load power. BLF647P#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 14 BLF647P Broadband power LDMOS transistor 7.2 Test circuit information T2 +Vgs1 R3 C4 +Vds1 L4 L11 R1 C22 C13 C1 50 Ω C19 C7 C3 C6 L2 C11 C12 L13 C16 L1 L3 C21 C17 C18 L14 C15 C8 C2 50 Ω L15 C20 C14 R2 C5 L5 C23 L12 +Vds2 R4 +Vgs2 aaa-006003 T1 See Table 9 for a list of components. Fig 1. Schematic for class-AB production test circuit 60 mm 60 mm R3 C22 C4 C1 C7 60 mm C19 C6 C3 C11 C15 C12 C8 C2 C17 C13 R1 R2 C14 C21 C16 C18 C20 C5 C23 R4 6 mm 6 mm 29 mm aaa-006004 See Table 9 for a list of components. Fig 2. BLF647P#3 Product data sheet Component layout for class-AB production test circuit All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 14 BLF647P Broadband power LDMOS transistor Table 9. List of components Printed-Circuit Board (PCB): RF 35; r = 3.5 F/m; thickness = 0.765 mm; thickness copper plating = 35 m. See Figure 1 and Figure 2. BLF647P#3 Product data sheet Component Description Value Remarks C1, C2, C3 multilayer ceramic chip capacitor 68 pF C4, C5 multilayer ceramic chip capacitor 4.7 F, 50 V C6 multilayer ceramic chip capacitor 2.4 pF [2] C7, C8 multilayer ceramic chip capacitor 4.7 pF [1] C11 multilayer ceramic chip capacitor 3.3 pF [3] C12 multilayer ceramic chip capacitor 2.4 pF [3] C13, C14 multilayer ceramic chip capacitor 3.3 pF [3] C15, C16 multilayer ceramic chip capacitor 1.2 pF [3] C17, C18 multilayer ceramic chip capacitor 4.7 F, 50 V [1] [3] C19, C20, C21 multilayer ceramic chip capacitor 220 pF C22, C23 electrolytic capacitor 470 F, 63 V L1 microstrip (L  W) 4 mm  1.7 mm L2, L3 microstrip (L  W) 22.5 mm  1.6 mm L4, L5 microstrip (L  W) 16.5 mm  15 mm L11, L12 microstrip (L  W) 8.5 mm  15 mm L13, L14 microstrip (L  W) 26 mm  4.2 mm L15 microstrip (L  W) 4 mm  1.7 mm R1, R2 SMD resistor 5.6  R3, R4 WIRE resistor 100  T1 semi rigid coax 25 , 40 mm UT-090C-25 T2 semi rigid coax 25 , 40 mm UT-141C-25 [1] American Technical Ceramics type 800A or capacitor of same quality. [2] American Technical Ceramics type 100A or capacitor of same quality. [3] American Technical Ceramics type 800B or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 SMD1206 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 14 BLF647P Broadband power LDMOS transistor 7.3 Graphical data 7.3.1 1-Tone CW aaa-006005 19 Gp (dB) aaa-006006 58 80 ηD (%) PL (dBm) Gp 18 Ideal PL 56 60 (2) 17 54 40 ηD (1) PL 16 52 20 15 0 50 100 150 200 250 PL (W) 50 0 300 32 34 36 38 40 Pi (dBm) VDS = 32 V; IDq = 100 mA; f = 1300 MHz. VDS = 32 V; IDq = 100 mA; f = 1300 MHz. (1) PL(1dB) = 53.4 dBm (217 W) (2) PL(3dB) = 53.9 dBm (245 W) Fig 3. Power gain and drain efficiency as function of output power; typical values BLF647P#3 Product data sheet Fig 4. Output power as a function of input power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 14 BLF647P Broadband power LDMOS transistor aaa-006007 20 (7) Gp (dB) aaa-006008 80 ηD (%) (6) (5) (4) 18 60 (3) (2) (1) 16 40 14 20 12 (1) (2) (3) (4) (5) (6) (7) 0 0 50 100 150 200 PL (W) 250 0 VDS = 32 V; f = 1300 MHz. 50 (1) IDq = 50 mA (2) IDq = 100 mA (2) IDq = 100 mA (3) IDq = 200 mA (3) IDq = 200 mA (4) IDq = 300 mA (4) IDq = 300 mA (5) IDq = 700 mA (5) IDq = 700 mA (6) IDq = 1000 mA (6) IDq = 1000 mA (7) IDq = 1200 mA Product data sheet 200 PL (W) 250 (7) IDq = 1200 mA Power gain as a function of output power; typical values BLF647P#3 150 VDS = 32 V; f = 1300 MHz. (1) IDq = 50 mA Fig 5. 100 Fig 6. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 14 BLF647P Broadband power LDMOS transistor aaa-006009 20 aaa-006010 80 Gp (dB) ηD (%) (2) (3) (1) (4) 18 60 16 40 (3) (5) (1) (2) (4) 14 20 (5) 12 0 0 50 100 150 200 PL (W) 250 0 50 150 200 PL (W) 250 IDq = 100 mA; f = 1300 MHz. IDq = 100 mA; f = 1300 MHz. (1) VDS = 32 V (1) VDS = 32 V (2) VDS = 28 V (2) VDS = 28 V (3) VDS = 25 V (3) VDS = 25 V (4) VDS = 20 V (4) VDS = 20 V (5) VDS = 15 V (5) VDS = 15 V Fig 7. 100 Power gain as a function of output power; typical values Fig 8. Drain efficiency as a function of output power; typical values 7.3.2 1-Tone pulsed aaa-006011 19 80 Gp (dB) ηD (%) Gp 18 60 17 40 ηD 16 20 15 0 50 100 150 200 250 PL (W) 0 300 VDS = 32 V;IDq = 100 mA; f = 1300 MHz; tp = 100 s;  = 20%. Fig 9. BLF647P#3 Product data sheet Power gain and drain efficiency as function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 14 BLF647P Broadband power LDMOS transistor 7.3.3 2-Tone CW aaa-006012 20 80 Gp (dB) Gp 19 aaa-006013 0 ηD (%) 60 IMD3 (dBc) -20 (1) (2) (3) 18 40 -40 (4) ηD 17 20 16 0 25 50 75 100 125 PL(AV) (W) 0 150 VDS = 50 V; IDq = 700 mA; f1 = 1299.95 MHz; f2 = 1300.05 MHz. -60 (5) -80 0 25 50 75 100 125 PL(AV) (W) 150 VDS = 32 V; f1 = 1299.95 MHz; f2 = 1300.05 MHz. (1) IDq = 100 mA (2) IDq = 400 mA (3) IDq = 700 mA (4) IDq = 1000 mA (5) IDq = 1200 mA Fig 10. Power gain and drain efficiency as function of average output power; typical values BLF647P#3 Product data sheet Fig 11. Third order intermodulation distortion as a function of average output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 14 BLF647P Broadband power LDMOS transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1121A D A F D1 U1 B q C H1 c 1 2 p U2 H E1 E 5 A w1 3 A B 4 b w2 C Q e 0 5 Dimensions Unit(1) mm 10 mm scale A max 4.75 nom min 3.45 b c D D1 3.94 0.18 20.02 19.96 3.68 0.10 19.61 19.66 E e E1 F H H1 p Q(2) 9.53 9.53 1.14 19.94 12.83 3.38 1.70 9.27 9.27 0.89 18.92 12.57 3.12 1.45 q U1 U2 max 0.187 0.155 0.007 0.788 0.786 0.375 0.375 0.045 0.785 0.505 0.133 0.067 inches nom 0.35 min 0.136 0.145 0.004 0.772 0.774 0.365 0.365 0.035 0.745 0.495 0.123 0.057 33.91 9.65 1.345 0.39 0.01 0.02 1.1 1.335 0.38 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version References IEC JEDEC JEITA w2 0.25 0.51 27.94 8.89 w1 34.16 9.91 sot1121a_po European projection Issue date 09-10-12 10-02-02 SOT1121A Fig 12. Package outline SOT1121A BLF647P#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 14 BLF647P Broadband power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description CW Continuous Waveform ESD ElectroStatic Discharge HF High Frequency LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF647P#3 20150901 Product data sheet - BLF647P_BLF647PS v.2 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF647P v.2 20130412 Product data sheet - BLF647P_BLF647PS v.1 BLF647P_BLF647PS v.1 20120803 Objective data sheet - - BLF647P#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 14 BLF647P Broadband power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLF647P#3 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 14 BLF647P Broadband power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com BLF647P#3 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 14 BLF647P Broadband power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.3.1 7.3.2 7.3.3 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Test circuit information . . . . . . . . . . . . . . . . . . . 4 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1-Tone pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Handling information. . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF647P#3