BLF9G20LS-160VU

BLF9G20LS-160V Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal 2-carrier W-CDMA [1] f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 1805 to 1880 800 28 35.5 19.8 33.5 28 [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing = 5 MHz. 1.2 Features and benefits          Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Excellent broadband performance Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifier for multi systems base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range BLF9G20LS-160V Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source 4 decoupling lead 5 decoupling lead 6 n.c. 7 n.c. [1] Simplified outline 4 1 Graphic symbol 1 5 4,5 6,7 [1] 2 3 3 6 2 aaa-003619 7 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF9G20LS-160V - SOT1120B earless flanged LDMOST ceramic package; 6 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS Tstg storage temperature Min Max Unit drain-source voltage - 65 V gate-source voltage 6 +13 V 65 +150 C - 225 C [1] junction temperature Tj [1] Conditions Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator. 5. Thermal characteristics BLF9G20LS-160V#3 Product data sheet Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 36 W; VDS = 28 V; IDq = 800 mA 0.17 K/W All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 12 BLF9G20LS-160V Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C, unless otherwise specified. Symbol Parameter Conditions Min V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.5 mA Typ Max Unit 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 154 mA 1.55 2.3 3.05 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 923 mA 1.4 2.2 3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 3.6 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 25 33 41.8 A IGSS gate leakage current VGS = 9 V; VDS = 0 V - - 360 nA gfs forward transconductance VDS = 10 V; ID = 154 mA - 1.32 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5.4 A - 0.098 -  Table 7. RF characteristics Test signal: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1; 64 DPCH; f1 = 1807.5 MHz; f2 = 1812.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz; RF performance at VDS = 28 V; IDq = 800 mA; Tcase = 25 C; unless otherwise specified; in a production circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 35.5 W 18.8 19.8 - dB D drain efficiency PL(AV) = 35.5 W 28.5 33.5 - % RLin input return loss PL(AV) = 35.5 W - 8 4 dB ACPR adjacent channel power ratio PL(AV) = 35.5 W - 28 23 dBc 7. Test information 7.1 Ruggedness in class-AB operation The BLF9G20LS-160V is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 800 mA; PL = 140 W (CW); f = 1805 MHz. 7.2 Impedance information Table 8. Typical impedance Measured load-pull data; IDq = 800 mA; VDS = 28 V. f ZS [1] ZL[1] (MHz) () () Maximum power load BLF9G20LS-160V#3 Product data sheet 1805 0.91  j3.39 1.11  j3.69 1842.5 1.16  j3.80 1.13  j3.72 1880 1.25  j3.95 1.16  j3.80 All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 12 BLF9G20LS-160V Power LDMOS transistor Table 8. Typical impedance …continued Measured load-pull data; IDq = 800 mA; VDS = 28 V. f ZS [1] ZL[1] (MHz) () () 1805 0.91  j3.39 2.19  j2.64 1842.5 1.16  j3.80 2.08  j2.55 1880 1.25  j3.95 1.88  j2.67 Maximum drain efficiency load [1] ZS and ZL defined in Figure 1. drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.3 Test circuit 50 mm C6 R1 50 mm C3 C12 C4 C9 C14 C10 C1 C2 60 mm C8 C5 C7 C11 C13 aaa-018327 Printed-Circuit Board (PCB): Rogers RO4350B; thickness = 0.762 mm. See Table 9 for a list of components. Fig 2. BLF9G20LS-160V#3 Product data sheet Component layout for test circuit All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 12 BLF9G20LS-160V Power LDMOS transistor Table 9. List of components See Figure 2 for component layout. Component Description Value Remarks C1, C2 multilayer ceramic chip capacitor 20 pF ATC 800B C3, C4, C5 multilayer ceramic chip capacitor 20 F ATC 600F C6, C8, C10, C11, C12 multilayer ceramic chip capacitor 10 F, 50 V Murata C7, C9 multilayer ceramic chip capacitor 0.1 F, 50 V Murata C13, C14 electrolytic capacitor 2200 F, 63 V R1 SMD resistor 9.1 , 12 W SMD 0805 7.4 Graphical data 7.4.1 CW aaa-016892 21 Gp (dB) 70 ηD (%) ηD 20 60 (1) (1) (2) (2) (3) (3) 19 50 18 40 Gp 17 30 16 0 40 80 120 160 PL (W) 20 200 VDS = 28 V; IDq = 800 mA. (1) f = 1805 MHz (2) f = 1842.5 MHz (3) f = 1880 MHz Fig 3. BLF9G20LS-160V#3 Product data sheet Power gain and drain efficiency as function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 12 BLF9G20LS-160V Power LDMOS transistor 7.4.2 Pulsed CW aaa-016893 21 70 Gp (dB) ηD (%) ηD 20 60 (1) (1) (2) (2) (3) (3) 19 50 18 40 17 Gp 16 0 40 80 120 160 PL (W) 30 20 200 VDS = 28 V; IDq = 800 mA; tp = 100 s;  = 10 %. (1) f = 1805 MHz (2) f = 1842.5 MHz (3) f = 1880 MHz Fig 4. Power gain and drain efficiency as function of output power; typical values 7.4.3 1-Carrier W-CDMA aaa-016894 25 Gp (dB) 50 ηD (%) ηD 23 45 -30 21 40 -40 (1) (1) (2) (2) (3) (3) 19 Gp 17 15 15 25 35 45 55 65 PL (W) aaa-016895 -20 ACPR5M (dBc) 35 -50 30 -60 25 -70 75 ACPR5M -30 -40 -70 25 35 (2) f = 1842.5 MHz (2) f = 1842.5 MHz (3) f = 1880 MHz 55 65 PL (W) 75 (3) f = 1880 MHz Power gain and drain efficiency as function of output power; typical values Product data sheet 45 VDS = 28 V; IDq = 800 mA. (1) f = 1805 MHz BLF9G20LS-160V#3 -50 -60 (1) f = 1805 MHz Fig 5. ACPR10M (1) (1) (2) (2) (3) (3) 15 VDS = 28 V; IDq = 800 mA. -20 ACPR10M (dBc) Fig 6. Adjacent channel power ratio (5 MHz) and adjacent channel power ratio (10 MHz) as function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 12 BLF9G20LS-160V Power LDMOS transistor 7.4.4 2-Tone VBW The BLF9G20LS-160V has a video bandwidth of 110 MHz (typical) when measured in a class-AB test circuit operating at a center frequency of 1840 MHz for VDS = 28 V and IDq = 800 mA. aaa-016896 0 IMD (dBc) (1) (2) -20 IMD3 (1) (2) -40 IMD5 IMD7 (2) (1) -60 -80 1 10 102 carrier spacing (MHz) 103 VDS = 28 V; IDq = 800 mA; fc = 1840 MHz. (1) IMD low (2) IMD high Fig 7. BLF9G20LS-160V#3 Product data sheet VBW capacity in class-AB test circuit All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 12 BLF9G20LS-160V Power LDMOS transistor 8. Package outline Earless flanged LDMOST ceramic package; 6 leads SOT1120B D A F 3 D1 L D c U1 1 4 5 y α H Z2 U2 Z1 Z 6 E1 E 7 2 b1 b w2 0 Q D 5 10 mm scale Dimensions Unit(1) mm A max 4.75 nom min 3.45 b b1 1.83 12.83 c D D1 E E1 F H L 0.18 20.02 19.96 9.53 9.53 1.14 19.94 3.56 Q(2) U1 U2 w2 1.70 20.70 9.91 y Z Z1 0.10 4.60 9.53 15.52 64° 4.32 8.71 14.50 60° Z2 α 0.51 1.57 12.57 0.10 19.61 19.66 9.27 9.25 0.89 18.92 3.30 1.45 20.45 9.65 0.004 0.181 0.375 0.611 64° max 0.187 0.072 0.505 0.007 0.788 0.786 0.375 0.375 0.045 0.785 0.140 0.067 0.815 0.39 0.02 inches nom 0.170 0.343 0.571 60° min 0.136 0.062 0.495 0.004 0.772 0.774 0.365 0.364 0.035 0.745 0.130 0.057 0.805 0.38 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version References IEC JEDEC JEITA European projection Issue date 12-06-14 13-10-21 SOT1120B Fig 8. sot1120b_po Package outline SOT1120B BLF9G20LS-160V#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 12 BLF9G20LS-160V Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor MTF Median Time to Failure PAR Peak-to-Average Ratio SMD Surface Mounted Device VBW Video BandWidth VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 11. Revision history Document ID Release date Data sheet status BLF9G20LS-160V#3 20150901 Product data sheet Modifications: Change notice Supersedes BLF9G20LS-160V v.2 • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF9G20LS-160V v.2 20150521 Product data sheet - BLF9G20LS-160V v.1 BLF9G20LS-160V v.1 20141218 Objective data sheet - - BLF9G20LS-160V#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 12 BLF9G20LS-160V Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. 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Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 12 BLF9G20LS-160V Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com BLF9G20LS-160V#3 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 12 BLF9G20LS-160V Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.4.1 7.4.2 7.4.3 7.4.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 3 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Handling information. . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF9G20LS-160V#3