BLC8G20LS-310AVZ

BLC8G20LS-310AVZ

  • 厂商:

    AMPLEON(安谱隆)

  • 封装:

    SOT-1258-3

  • 描述:

    BLC8G20LS-310AVZ

  • 数据手册
  • 价格&库存
BLC8G20LS-310AVZ 数据手册
BLC8G20LS-310AV Power LDMOS transistor Rev. 5 — 24 November 2017 Product data sheet 1. Product profile 1.1 General description 310 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1900 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified. Test signal 1-carrier W-CDMA [1] f VDS PL(AV) Gp D ACPR (MHz) (V) (dBm) (dB) (%) (dBc) 1930 to 1995 28 47.5 17 42.5 33 [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.65 dB at 0.01% probability on CCDF per carrier. 1.2 Features and benefits         Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for base stations and multi carrier applications in the 1900 MHz to 2000 MHz frequency range BLC8G20LS-310AV Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain2 (peak) 2 drain1 (main) 3 gate1 (main) 4 gate2 (peak) Simplified outline 7 1 2, 7 6 5 3 3 5 4 4 [1] 5 source 6 video decoupling (peak) 7 video decoupling (main) [1] 2 Graphic symbol 1, 6 aaa-014884 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package BLC8G20LS-310AV Name Description Version - air cavity plastic earless flanged package; 6 leads SOT1258-1 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS(amp)main main amplifier gate-source voltage 0.5 +13 V VGS(amp)peak peak amplifier gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C - 225 C junction temperature Tj [1] [1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF calculator. 5. Thermal characteristics BLC8G20LS-310AV Product data sheet Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-c) thermal resistance from junction to case VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V; Tcase = 80 C Typ Unit PL = 56 W (CW) 0.30 K/W PL = 89 W (CW) 0.30 K/W All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 2 of 16 BLC8G20LS-310AV Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Main device V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.44 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 144 mA 1.5 1.9 2.3 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 650 mA 1.7 2.1 2.5 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 28 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 5.04 A - 10 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5.04 A - 100 166 m Peak device V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.2 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 220 mA 1.5 1.9 2.3 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 1100 mA 1.7 2.1 2.5 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 39 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 7.70 A - 15 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 7.7 A - 70 112 m Table 7. RF characteristics Test signal: 1-carrier W-CDMA; PAR = 9.65 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1 - 64 DPCH; f1 = 1932.5 MHz; f2 = 1992.5 MHz; RF performance at VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V; Tcase = 25 C; unless otherwise specified; in an asymmetrical Doherty production test circuit in 1930 MHz to 1995 MHz. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 56 W 15.8 16.9 - dB RLin input return loss PL(AV) = 56 W - 10 6 dB D drain efficiency PL(AV) = 56 W 38 42.5 - % ACPR adjacent channel power ratio PL(AV) = 56 W - 33 28 dBc Table 8. RF characteristics Test signal: 1-carrier W-CDMA; PAR = 9.65 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1 - 64 DPCH; RF performance at VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V; Tcase = 25 C; unless otherwise specified; in an asymmetrical Doherty production test circuit at 1992.5 MHz. Symbol Parameter PARO output peak-to-average ratio PL(M) peak output power BLC8G20LS-310AV Product data sheet Conditions Min Typ Max Unit PL(AV) = 56 W 7.0 7.25 - dB PL(AV) = 56 W 281 300 - W All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 3 of 16 BLC8G20LS-310AV Power LDMOS transistor 7. Test information 7.1 Ruggedness in Doherty operation The BLC8G20LS-310AV is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V; f = 1930 MHz. Test signal: 1-carrier WCDMA; PL = 90 W (PL(M) = 5 dB); 100 % clipping at 0.01% probability on CCDF. 7.2 Impedance information Table 9. Typical impedance of main device Measured load-pull data of main device; IDq = 700 mA (main); VDS = 28 V; pulsed CW (tp = 100 s;  = 10 %). f ZS [1] ZL [1] PL [2] D [2] Gp [2] (MHz) () () (W) (%) (dB) Maximum power load 1930 1.3  j3.5 1.1  j4.1 169.8 55.6 16.9 1962 1.4  j3.9 1.1  j4.1 166.3 56.0 17.3 1995 2.1  j3.9 1.3  j4.4 163.9 57.9 17.9 Maximum drain efficiency load 1930 1.3  j3.5 1.7  j2.9 116.0 66.4 19.6 1962 1.4  j3.9 1.8  j3.3 121.2 65.6 19.7 1995 2.1  j3.9 1.8  j3.9 136.0 64.0 19.4 [1] ZS and ZL defined in Figure 1. [2] at 3 dB gain compression. Table 10. Typical impedance of peak device Measured load-pull data of peak device; IDq = 1200 mA (peak); VDS = 28 V; pulsed CW (tp = 100 s;  = 10 %). f ZS [1] ZL [1] PL [2] D [2] Gp [2] (MHz) () () (W) (%) (dB) Maximum power load 1930 1.1  j3.9 1.4  j4.7 239.9 53.9 16.5 1962 1.4  j4.1 1.4  j4.8 234.3 53.6 16.9 1995 1.8  j4.5 1.4  j5.2 229.3 50.2 16.6 Maximum drain efficiency load BLC8G20LS-310AV Product data sheet 1930 1.1  j3.9 1.7  j2.9 149.8 64.3 19.6 1962 1.4  j4.1 1.7  j2.8 122.0 61.3 20.3 1995 1.8  j4.5 1.7  j3.3 147.6 62.9 19.9 [1] ZS and ZL defined in Figure 1. [2] at 3 dB gain compression. All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 4 of 16 BLC8G20LS-310AV Power LDMOS transistor drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.3 Recommended impedances for Doherty design Table 11. Typical impedance of main device at 1 : 1 load Measured load-pull data of main device; IDq = 700 mA (main); VDS = 28 V; pulsed CW (tp = 100 s;  = 10 %). f ZS [1] ZL [1] PL [2] D [3] Gp [3] (MHz) () () (dBm) (%) (dB) Maximum power load 1930 0.9  j3.3 1.3  j4.8 151.7 33.9 19.8 1962 0.9  j3.6 1.3  j4.6 152.8 35.2 20.2 1995 1.3  j3.7 1.3  j4.5 162.5 36.2 20.6 [1] ZS and ZL defined in Figure 1. [2] at 3 dB gain compression. [3] at PL(AV) = 56 W. Table 12. Typical impedance of main device at 1 : 2.5 load Measured load-pull data of main device; IDq = 700 mA (main); VDS = 28 V; pulsed CW (tp = 100 s;  = 10 %). f ZS [1] ZL [1] PL [2] D [3] Gp [3] (MHz) () () (dBm) (%) (dB) Maximum power load 1930 1.3  j3.4 2.4  j3.5 111.2 49.2 22.5 1962 1.4  j3.8 2.6  j3.5 105.7 50.4 22.9 1995 1.9  j3.9 2.8  j3.6 100.2 50.2 23.0 [1] BLC8G20LS-310AV Product data sheet ZS and ZL defined in Figure 1. [2] at 3 dB gain compression. [3] at PL(AV) = 56 W. All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 5 of 16 BLC8G20LS-310AV Power LDMOS transistor Table 13. Typical impedance of peak device at 1 : 1 load Measured load-pull data of peak device; IDq = 1200 mA (peak); VDS = 28 V; pulsed CW (tp = 100 s;  = 10 %). f ZS [1] ZL [1] PL [2] D [2] Gp [2] (MHz) () () (dBm) (%) (dB) Maximum power load 1930 1.1  j4.9 1.7  j4.9 231.2 51.9 16.6 1962 1.4  j4.1 1.6  j4.7 217.8 53.0 17.3 1995 1.8  j4.4 1.6  j4.5 215.3 57.1 17.9 [1] ZS and ZL defined in Figure 1. [2] at 3 dB gain compression. Table 14. Off-state impedances of peak device f Zoff (MHz) () 1930 0.6 + j1.9 1962 0.6 + j2.2 1995 0.6 + j2.5 7.4 Test circuit 110 mm R4 C21 C10 C5 C3 C12 C11 R2 C9 C1 C13 80 mm C14 X1 C17 C15 R1 C2 C16 C19 C4 C6 R5 C20 C22 R3 aaa-018274 Printed-Circuit Board (PCB): Rogers RO4350B; thickness = 0.508 mm; thickness copper plating = 35 m. See Table 15 for a list of components. Fig 2. BLC8G20LS-310AV Product data sheet Component layout for test circuit All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 6 of 16 BLC8G20LS-310AV Power LDMOS transistor Table 15. List of components See Figure 2 for component layout. Value Remarks C1, C2, C3, C4, C9, C11, multilayer ceramic chip capacitor C14, C16, C17, C19 Component Description 18 pF Murata 0805 C5, C6, C10, C12, C13, C15, C20 multilayer ceramic chip capacitor 10 F C21, C22 electrolytic capacitor 470 F, 63 V C6 multilayer ceramic chip capacitor 2.4 pF R1 SMD resistor 50 , 12 W Anaren 2010 R2, R3 wire resistor 5.1  Vishay Dale 0805 R4 wire resistor 1.2 k SMD 0805 R5 wire resistor 3.9 k SMD 0805 7.5 Graphical data 7.5.1 Pulsed CW aaa-014432 60 ηD (%) aaa-014433 19 Gp (dB) 50 18 (3) (2) (1) 40 17 30 16 20 15 10 14 0 (1) (2) (3) 13 0 50 100 150 200 250 300 PL (W) 350 0 VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V; tp = 100 s;  = 10 %. 50 100 (1) f = 1930 MHz (2) f = 1962.5 MHz (2) f = 1962.5 MHz (3) f = 1995 MHz (3) f = 1995 MHz Drain efficiency as a function of output power; typical values BLC8G20LS-310AV Product data sheet 200 250 300 PL (W) 350 VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V; tp = 100 s;  = 10 %. (1) f = 1930 MHz Fig 3. 150 Fig 4. Power gain as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 7 of 16 BLC8G20LS-310AV Power LDMOS transistor 7.5.2 1-Carrier W-CDMA PAR = 9.7 dB at 0.01 % probability on the CCDF; 3GPP test model 1 with 64 DPCH (100 % clipping). aaa-017497 18 Gp (dB) 50 ηD (%) Gp 17 (1) (2) (3) 16 15 aaa-017490 -25 ACPR5M (dBc) 40 -30 30 -35 20 -40 10 -45 (1) (2) (3) ηD 14 13 0 20 40 60 80 PL (W) 0 100 -50 0 VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V. 20 (1) f = 1930 MHz (2) f = 1962.5 MHz (2) f = 1962.5 MHz (3) f = 1995 MHz 60 80 PL (W) 100 VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V. (1) f = 1930 MHz Fig 5. 40 (3) f = 1995 MHz Power gain and drain efficiency as function of output power; typical values Fig 6. aaa-017499 11 PAR (dB) Adjacent channel power ratio (5 MHz) as a function of output power; typical values aaa-017500 23 RLin (dB) 10 19 (3) 15 (2) 9 8 (3) (2) (1) 7 (1) 11 6 5 7 0 20 40 60 80 PL (W) 100 0 VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V. 20 (1) f = 1930 MHz (2) f = 1962.5 MHz (2) f = 1962.5 MHz (3) f = 1995 MHz (3) f = 1995 MHz Peak-to-average ratio as a function of output power; typical values BLC8G20LS-310AV Product data sheet 60 80 PL (W) 100 VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V. (1) f = 1930 MHz Fig 7. 40 Fig 8. Input return loss as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 8 of 16 BLC8G20LS-310AV Power LDMOS transistor 7.5.3 2-Carrier W-CDMA PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test model 1 with 64 DPCH (46 % clipping). aaa-017501 18 Gp (dB) 50 ηD (%) Gp 17 (1) (2) (3) 16 15 aaa-017502 -15 ACPR5M (dBc) -15 ACPR10M (dBc) 40 -25 -25 30 -35 -35 20 -45 10 -55 (1) (2) (3) -45 ηD 14 13 0 20 40 60 80 PL (W) 0 100 -55 -65 0 VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V. 20 60 80 PL (W) -65 100 VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V. (1) f = 1930 MHz (1) f = 1930 MHz (2) f = 1962.5 MHz (2) f = 1962.5 MHz (3) f = 1995 MHz Fig 9. 40 (3) f = 1995 MHz Power gain and drain efficiency as function of output power; typical values Fig 10. Adjacent channel power ratio (5 MHz) and adjacent channel power ratio (10 MHz) as function of output power; typical values aaa-017503 23 RLin (dB) 19 (3) 15 (2) (1) 11 7 0 20 40 60 80 PL (W) 100 VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V. (1) f = 1930 MHz (2) f = 1962.5 MHz (3) f = 1995 MHz Fig 11. Input return loss as a function of output power; typical values BLC8G20LS-310AV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 9 of 16 BLC8G20LS-310AV Power LDMOS transistor 7.5.4 CW aaa-018280 4 AM to PM (deg) 0 aaa-017504 8 td(grp) (ns) 6 (1) (2) (3) -4 4 (2) -8 2 -12 (1) 0 -16 -20 30 34 38 42 46 50 54 PL (W) -2 1700 58 VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V. 1820 1940 2060 2180 f (MHz) 2300 VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V. (1) f = 1930 MHz (1) Pi = 7 dBm (2) f = 1962.5 MHz (2) Pi = +30.5 dBm (3) f = 1995 MHz Fig 12. AM to PM as a function of output power; typical values Fig 13. Group delay time as a function of frequency; typical values 7.5.5 2-Tone VBW aaa-018281 -10 IMD (dBc) -20 (1) (2) IMD3 -30 IMD5 (1) (2) -40 IMD7 (1) (2) -50 -60 -70 1 10 102 carrier spacing (MHz) 103 VDS = 28 V; IDq = 450 mA (main); VGS(amp)peak = 0.5 V; f = 1960 MHz. (1) IMD low (2) IMD high Fig 14. VBW capability in Doherty development board BLC8G20LS-310AV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 10 of 16 BLC8G20LS-310AV Power LDMOS transistor 8. Package outline Air cavity plastic earless flanged package; 6 leads SOT1258-1 D A F 5 w1 D1 v B A L b c 7 2 6 1 y Į H1 Z1 Z H E1 U2 E A 3 4 e Q w2 b1 U1 B B 0 10 mm y Į 0.1 65° 3.17 5.79 61° 2.67 5.29 scale Z Z1 Dimensions Unit mm A max 4.65 nom min 4.18 b b1 c 1.12 11.78 0.2 D D1 E 31.44 31.34 9.60 E1 H H1 Q(1) 36.42 1.83 16.71 8.12 2.33 32.33 10.23 36.22 1.63 16.51 7.62 2.13 32.13 10.03 e 9.50 L F U1 v w1 w2 0.5 0.5 0.5 13.72 0.91 11.58 0.1 31.04 31.14 9.20 9.30 Note 1. Dimension Q is measured 0.1 mm away from the flange. 2. Ringframe and/or ringframe glue shall not overhang at the side of the flange. Outline version U2 References IEC JEDEC JEITA sot1258-1_po European projection Issue date 14-02-24 17-08-31 SOT1258-1 Fig 15. Package outline SOT1258-1 BLC8G20LS-310AV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 11 of 16 BLC8G20LS-310AV Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 16. ESD sensitivity ESD model Class Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C2A [1] Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 2 [2] [1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails after exposure to an ESD pulse of 750 V. [2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V, but fails after exposure to an ESD pulse of 4000 V. 10. Abbreviations Table 17. BLC8G20LS-310AV Product data sheet Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project AM Amplitude Modulation CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal-Oxide Semiconductor MTF Median Time to Failure PAR Peak-to-Average Ratio PM Phase Modulation SMD Surface Mounted Device VBW Video BandWidth VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 12 of 16 BLC8G20LS-310AV Power LDMOS transistor 11. Revision history Table 18. Revision history Document ID Release date Data sheet status Change notice Supersedes BLC8G20LS-310AV v.5 20171124 Product data sheet - BLC8G20LS-310AV v.4 Modifications: • • • Table 2 on page 2: changed simplified version drawing SOT1258-3 to SOT1258-1 Table 3 on page 2: changed version SOT1258-3 to SOT1258-1 Figure 15 on page 11: changed package outline drawing SOT1258-3 to SOT1258-1 BLC8G20LS-310AV v.4 20161202 Product data sheet - BLC8G20LS-310AV v.3 BLC8G20LS-310AV v.3 20150901 Product data sheet - BLC8G20LS-310AV v.2 BLC8G20LS-310AV v.2 20150506 Product data sheet - BLC8G20LS-310AV v.1 BLC8G20LS-310AV v.1 20150506 Product data sheet - - BLC8G20LS-310AV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 13 of 16 BLC8G20LS-310AV Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLC8G20LS-310AV Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 14 of 16 BLC8G20LS-310AV Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’s standard warranty and Ampleon’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLC8G20LS-310AV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 15 of 16 BLC8G20LS-310AV Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.5.1 7.5.2 7.5.3 7.5.4 7.5.5 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 Ruggedness in Doherty operation . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Recommended impedances for Doherty design 5 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 8 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Handling information. . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon Netherlands B.V. 2017. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 24 November 2017 Document identifier: BLC8G20LS-310AV
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