BLF8G09LS-400PGWJ

BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal 2-carrier W-CDMA [1] f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 716 to 728 3400 28 95 20.6 30 35 [1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; 10 MHz carrier spacing. 1.2 Features and benefits             Excellent ruggedness Device can operate with the supply current delivered through the video leads High efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation Lower output capacitance for improved performance in Doherty applications Decoupling leads to enable improved video bandwidth (45 MHz typical) Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Design optimized for gull-wing Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for base stations and multi carrier applications in the 716 MHz to 960 MHz frequency range BLF8G09LS-400P(G)W Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF8G09LS-400PW (SOT1242B) 1 drain1 2 drain2 3 gate1 4 gate2 6 1 2 7 1 6 8 3 5 source [1] 6 decoupling1 [2] 7 decoupling2 [2] 8 n.c. 9 n.c. 5 8 3 4 9 5 4 9 7 2 aaa-007816 BLF8G09LS-400PGW (SOT1242C) 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] 6 decoupling1 [2] 7 decoupling2 [2] 8 n.c. 9 n.c. 6 1 2 7 1 6 8 3 8 3 4 9 5 5 4 9 7 2 aaa-007816 [1] Connected to flange. [2] Device can operate with the supply current delivered through the combined decoupling leads. 3. Ordering information Table 3. Ordering information Type number Package Name BLF8G09LS-400PW_8G09LS-400PGW#5 Product data sheet Description Version BLF8G09LS-400PW - earless flanged ceramic package; 8 leads SOT1242B BLF8G09LS-400PGW - earless flanged ceramic package; 8 leads SOT1242C All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 17 BLF8G09LS-400P(G)W Power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C - 225 C junction temperature Tj [1] [1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator. 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 95 W 0.26 K/W 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3 mA Min Typ Max Unit 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 300 mA 1.5 1.8 2.3 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 1700 mA 1.7 2 2.5 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 55 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 15 A - 26 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 12.25 A - 0.06 -  Table 7. RF characteristics Test signal: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1-64 DPCH; f1 = 718.5 MHz; f2 = 723.5 MHz; f3 = 720.5 MHz; f4 = 725.5 MHz; RF performance at VDS = 28 V; IDq = 3400 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit, tested on straight lead device. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 95 W 18.8 20.6 - dB RLin input return loss PL(AV) = 95 W - 19 11 dB D drain efficiency PL(AV) = 95 W 26 30 - % PL(AV) = 95 W - 35 32 dBc ACPR5M adjacent channel power ratio (5 MHz) BLF8G09LS-400PW_8G09LS-400PGW#5 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 17 BLF8G09LS-400P(G)W Power LDMOS transistor 7. Test information 7.1 Ruggedness in class-AB operation The BLF8G09LS-400PW and BLF8G09LS-400PGW are capable of withstanding a load mismatch corresponding to VSWR = 7 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 3400 mA; 2-carrier W-CDMA signal; PL = 200 W; f = 716 MHz; 5 MHz carrier spacing; 46 % clipping. 7.2 Impedance information Table 8. Typical impedance Measured load-pull data for the top-half of the push-pull package; IDq = 1800 mA; VDS = 28 V; Tcase = 25 C, water cooled. f ZS[1] ZL[1] (MHz) () () BLF8G09LS-400PW (straight lead) 720 1.26  j2.89 1.8  j1.94 757 1.44  j3.82 2  j1.6 769 1.55  j3.64 1.9  j1.75 805 1.7  j4.5 1.5  j1.3 BLF8G09LS-400PGW (gull-wing) 720 1.37  j3 1.7  j2.1 757 1.4  j3.6 1.6  j2.3 769 1.3  j3.9 1.7  j2.2 805 1.6  j4.3 1.48  j1.97 [1] ZS and ZL defined in Figure 1. drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.3 VBW in class-AB operation The BLF8G09LS-400PW and BLF8G09LS-400PGW show 45 MHz (typical) video bandwidth in class-AB test circuit in 722 MHz band at VDS = 28 V and IDq = 3400 mA. BLF8G09LS-400PW_8G09LS-400PGW#5 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 17 BLF8G09LS-400P(G)W Power LDMOS transistor 7.4 Test circuit 50 mm 50 mm C10 C16 C18 R4 C8 C6 C17 C23 C19 R2 C4 C2 C25 C20 C26 C21 C22 60 mm C1 C3 R1 C5 R3 C9 R5 C7 C11 C12 C14 C13 C24 C15 aaa-010235 Printed-Circuit Board (PCB): Rogers RO4350B; r = 3.66; thickness = 0.508 mm; thickness copper plating = 35 m. See Table 9 for a list of components. Fig 2. Component layout Table 9. List of components For test circuit see Figure 2. BLF8G09LS-400PW_8G09LS-400PGW#5 Product data sheet Component Description Value Remarks C1, C2, C3, C8, C9 multilayer ceramic chip capacitor 100 pF ATC 100A C4, C5 multilayer ceramic chip capacitor 9.1 pF ATC 100A C6, C7 multilayer ceramic chip capacitor 10 pF ATC 100A C10, C11, C13, C17 multilayer ceramic chip capacitor 1 F, 50 V Murata C12, C16 multilayer ceramic chip capacitor 100 nF, 50 V Murata C14, C15, C18, C19 multilayer ceramic chip capacitor 10 F, 50 V Murata C20, C21 multilayer ceramic chip capacitor 5.1 pF ATC 100A C22 multilayer ceramic chip capacitor 82 pF ATC 100B C23, C24 electrolytic capacitor 470 F, 63 V C25, C26 multilayer ceramic chip capacitor 3 pF R1 resistor 10  R2, R3, R4, R5 resistor 5.1  All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 ATC 100A © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 17 BLF8G09LS-400P(G)W Power LDMOS transistor 7.5 Graphical data 7.5.1 Pulsed CW aaa-010236 22 Gp (dB) aaa-010237 60 ηD (%) 21 50 20 40 (3) (2) (1) 19 (1) (2) (3) 30 18 20 17 10 16 0 38 42 46 50 54 PL (dBm) 58 35 VDS = 28 V; IDq = 3400 mA; tp = 100 s;  = 10 %. 40 (1) f = 716 MHz (2) f = 722 MHz (2) f = 722 MHz (3) f = 728 MHz (3) f = 728 MHz Power gain as a function of output power; typical values BLF8G09LS-400PW_8G09LS-400PGW#5 Product data sheet 50 55 PL (dBm) 60 VDS = 28 V; IDq = 3400 mA; tp = 100 s;  = 10 %. (1) f = 716 MHz Fig 3. 45 Fig 4. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 17 BLF8G09LS-400P(G)W Power LDMOS transistor 7.5.2 IS-95 aaa-010238 22 Gp (dB) aaa-010239 40 ηD (%) (3) (2) (1) 21 30 20 20 19 10 18 (1) (2) (3) 0 38 40 42 44 46 48 50 PL (dBm) 52 38 VDS = 28 V; IDq = 3400 mA. 40 44 46 48 50 PL (dBm) 52 VDS = 28 V; IDq = 3400 mA. (1) f = 716 MHz (1) f = 716 MHz (2) f = 722 MHz (2) f = 722 MHz (3) f = 728 MHz (3) f = 728 MHz Fig 5. 42 Power gain as a function of output power; typical values aaa-010240 -30 ACPR885k (dBc) Fig 6. Drain efficiency as a function of output power; typical values aaa-010241 -50 -- ACPR1980k (dBc) -55 -40 -60 (1) (2) (3) -50 (3) (2) (1) -65 -70 -60 -75 -70 -80 38 40 42 44 46 48 50 PL (dBm) 52 38 VDS = 28 V; IDq = 3400 mA. 40 (1) f = 716 MHz (2) f = 722 MHz (2) f = 722 MHz (3) f = 728 MHz Product data sheet 46 48 50 PL (dBm) 52 (3) f = 728 MHz Adjacent channel power ratio (885 kHz) as a function of output power; typical values BLF8G09LS-400PW_8G09LS-400PGW#5 44 VDS = 28 V; IDq = 3400 mA. (1) f = 716 MHz Fig 7. 42 Fig 8. Adjacent channel power ratio (1980 kHz) as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 17 BLF8G09LS-400P(G)W Power LDMOS transistor aaa-010242 12 PAR (dB) aaa-010243 60 PL(M) (dBm) 58 10 56 (3) (2) (1) 8 54 (1) (2) (3) 52 6 50 4 48 38 40 42 44 46 48 50 PL (dBm) 52 38 VDS = 28 V; IDq = 3400 mA. 40 42 46 48 50 PL (dBm) 52 VDS = 28 V; IDq = 3400 mA. (1) f = 716 MHz (1) f = 716 MHz (2) f = 722 MHz (2) f = 722 MHz (3) f = 728 MHz Fig 9. 44 (3) f = 728 MHz Peak-to-average ratio as a function of output power; typical values Fig 10. Peak output power as a function of output; typical values 7.5.3 1-Carrier W-CDMA aaa-010244 22 Gp (dB) aaa-010245 50 ηD (%) 40 (1) (2) (3) 21 30 (3) (2) (1) 20 20 19 10 18 0 38 40 42 44 46 48 50 52 PL (dBm) 54 VDS = 28 V; IDq = 3400 mA. 38 40 42 (1) f = 716 MHz (2) f = 722 MHz (2) f = 722 MHz (3) f = 728 MHz 48 50 52 PL (dBm) 54 (3) f = 728 MHz Fig 11. Power gain as a function of output power; typical values Product data sheet 46 VDS = 28 V; IDq = 3400 mA. (1) f = 716 MHz BLF8G09LS-400PW_8G09LS-400PGW#5 44 Fig 12. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 17 BLF8G09LS-400P(G)W Power LDMOS transistor aaa-010246 10 PAR (dB) aaa-010247 30 RLin (dB) 8 25 6 (3) (2) (1) (3) 20 4 (2) 15 (1) 2 0 10 38 40 42 44 46 48 50 52 PL (dBm) 54 38 VDS = 28 V; IDq = 3400 mA. 40 42 44 46 48 50 52 PL (dBm) 54 VDS = 28 V; IDq = 3400 mA. (1) f = 716 MHz (1) f = 716 MHz (2) f = 722 MHz (2) f = 722 MHz (3) f = 728 MHz (3) f = 728 MHz Fig 13. Peak-to-average ratio as a function of output power; typical values Fig 14. Input return loss as a function of output power; typical values 7.5.4 2-Carrier W-CDMA aaa-010248 22 Gp (dB) aaa-010249 50 ηD (%) 40 21 30 (3) (2) (1) 20 (1) (2) (3) 20 19 10 18 0 38 40 42 44 46 48 50 52 PL (dBm) 54 VDS = 28 V; IDq = 3400 mA. 38 40 42 (1) f = 716 MHz (2) f = 722 MHz (2) f = 722 MHz (3) f = 728 MHz 48 50 52 PL (dBm) 54 (3) f = 728 MHz Fig 15. Power gain as a function of output power; typical values Product data sheet 46 VDS = 28 V; IDq = 3400 mA. (1) f = 716 MHz BLF8G09LS-400PW_8G09LS-400PGW#5 44 Fig 16. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 17 BLF8G09LS-400P(G)W Power LDMOS transistor aaa-010250 30 RLin (dB) 25 20 (3) (2) 15 (1) 10 38 40 42 44 46 48 50 52 PL (dBm) 54 VDS = 28 V; IDq = 3400 mA. (1) f = 716 MHz (2) f = 722 MHz (3) f = 728 MHz Fig 17. Input return loss as a function of output power; typical values aaa-010251 -20 ACPR5M (dBc) aaa-010252 -30 ACPR10M (dBc) -35 (1) (2) (3) -30 -40 -40 (1) (2) (3) -45 -50 -50 -55 -60 -60 38 40 42 44 46 48 50 52 PL (dBm) 54 VDS = 28 V; IDq = 3400 mA. 38 40 42 (1) f = 716 MHz (2) f = 722 MHz (2) f = 722 MHz (3) f = 728 MHz (3) f = 728 MHz Fig 18. Adjacent channel power ratio (5 MHz) as a function of output power; typical values Product data sheet 46 48 50 52 PL (dBm) 54 VDS = 28 V; IDq = 3400 mA. (1) f = 716 MHz BLF8G09LS-400PW_8G09LS-400PGW#5 44 Fig 19. Adjacent channel power ratio (10 MHz) as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 17 BLF8G09LS-400P(G)W Power LDMOS transistor 7.5.5 2-Tone VBW aaa-010253 10 IMD (dBc) -10 (1) (2) IMD3 -30 (1) (2) IMD5 IMD7 -50 (1) (2) -70 1 10 carrier spacing (MHz) 102 VDS = 28 V; IDq = 3400 mA. (1) IMD low (2) IMD high Fig 20. VBW capability in class-AB test circuit BLF8G09LS-400PW_8G09LS-400PGW#5 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 17 BLF8G09LS-400P(G)W Power LDMOS transistor 8. Package outline Earless flanged ceramic package; 8 leads SOT1242B D A F 5 D1 v A U1 6 c B 1 2 7 y H U2 E1 E A 8 3 4 b1 b 9 w2 Q B e e1 0 5 10 mm scale Dimensions Unit(1) mm max nom min A b b1 c 5.5 1.41 11.81 0.18 D D1 e e1 31.55 31.52 E E1 F H Q(2) 9.50 9.53 1.75 19.94 2.26 32.39 10.29 9.30 9.27 1.50 18.92 2.01 32.13 10.03 U1 U2 v w2 y 0.25 0.25 0.10 13.72 29.47 4.2 1.14 11.56 0.10 30.94 30.96 max 0.217 0.055 0.465 0.007 1.242 1.241 0.540 inches nom min 0.165 0.045 0.455 0.004 0.218 1.219 0.374 0.375 0.069 0.785 0.089 1.275 0.405 0.010 0.366 0.365 0.059 0.745 0.079 1.265 0.395 Note 1. Millimeter dimensions are derived from the original inch dimensions. 2. Dimension is measured 0.030 inch (0.76 mm) from the body. Outline version References IEC JEDEC 0.010 0.004 1.16 JEITA sot1242b_po European projection Issue date 12-11-28 15-07-21 SOT1242B Fig 21. Package outline SOT1242B BLF8G09LS-400PW_8G09LS-400PGW#5 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 17 BLF8G09LS-400P(G)W Power LDMOS transistor Earless flanged ceramic package; 8 leads SOT1242C 0.3 mm gauge plane D Lp F A 5 D1 y Q detail X v A U1 B c X 6 H 1 2 7 E1 U2 8 A 3 4 9 b1 b E w2 B θ e θ 7° e1 0 5 0° 7° 10 mm scale 0° Dimensions Unit(1) mm max nom min A b b1 c 5.5 1.41 11.81 0.18 D D1 e e1 31.55 31.52 E E1 F H 9.50 9.53 1.75 14.70 1.38 0.195 32.39 10.29 0.25 0.25 0.15 9.30 9.27 1.50 14.50 0.98 0.045 32.13 10.03 Lp Q U1 U2 v w2 y 13.72 29.47 4.2 max 0.217 inches nom min 0.165 1.14 11.56 0.10 0.055 0.465 0.007 1.242 1.241 0.045 0.455 0.004 1.218 1.219 30.94 30.96 0.374 0.375 0.069 0.579 0.055 0.008 1.275 0.405 0.01 0.01 0.006 0.540 1.16 0.366 0.365 0.059 0.571 0.039 0.002 1.265 0.395 Note 1. Millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot1242c_po European projection Issue date 12-05-15 12-05-30 SOT1242C Fig 22. Package outline SOT1242C BLF8G09LS-400PW_8G09LS-400PGW#5 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 17 BLF8G09LS-400P(G)W Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge IS-95 Interim Standard 95 LDMOS Laterally Diffused Metal Oxide Semiconductor MTF Median Time to Failure PAR Peak-to-Average Ratio VBW Video Bandwidth VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 11. Revision history Document ID Release date BLF8G09LS-400PW_ 20150901 8G09LS-400PGW#5 Modifications: Data sheet status Change notice Supersedes Product data sheet - BLF8G09LS-400PW_ 8G09LS-400PGW v.4 • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF8G09LS-400PW_ 20150728 8G09LS-400PGW v.4 Product data sheet - BLF8G09LS-400PW_ 8G09LS-400PGW v.3 BLF8G09LS-400PW_ 20140324 8G09LS-400PGW v.3 Product data sheet - BLF8G09LS-400PW_ 8G09LS-400PGW v.2 BLF8G09LS-400PW_ 20131220 8G09LS-400PGW v.2 Preliminary data sheet - BLF8G09LS-400PW_ 8G09LS-400PGW v.1 BLF8G09LS-400PW_ 20130927 8G09LS-400PGW v.1 Objective data sheet - - BLF8G09LS-400PW_8G09LS-400PGW#5 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 14 of 17 BLF8G09LS-400P(G)W Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLF8G09LS-400PW_8G09LS-400PGW#5 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 15 of 17 BLF8G09LS-400P(G)W Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com BLF8G09LS-400PW_8G09LS-400PGW#5 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 16 of 17 BLF8G09LS-400P(G)W Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.5.1 7.5.2 7.5.3 7.5.4 7.5.5 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 VBW in class-AB operation . . . . . . . . . . . . . . . 4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 IS-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 8 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9 2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Handling information. . . . . . . . . . . . . . . . . . . . 14 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF8G09LS-400PW_8G09LS-400PGW#5