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BLF8G27LS-100V,118

BLF8G27LS-100V,118

  • 厂商:

    AMPLEON(安谱隆)

  • 封装:

    SOT-1244B

  • 描述:

    TRANSISTOR RF POWER 100W ACC-6L

  • 详情介绍
  • 数据手册
  • 价格&库存
BLF8G27LS-100V,118 数据手册
BLF8G27LS-100V; BLF8G27LS-100GV Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal 2-carrier W-CDMA [1] f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2500 to 2700 900 28 25 17 28 32 [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing. 1.2 Features and benefits           Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Decoupling leads to enable improved video bandwidth (110 MHz typical) Designed for broadband operation (2500 MHz to 2700 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to 2700 MHz frequency range BLF8G27LS-100(G)V Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF8G27LS-100V (SOT1244B) 1 drain 2 gate 4 1 1 5 [1] 3 source 4 decoupling lead 5 decoupling lead 6 n.c. 7 n.c. 4,5 6,7 2 3 3 aaa-003619 6 2 7 BLF8G27LS-100GV (SOT1244C) 1 drain 2 gate 3 source 4 decoupling lead 5 decoupling lead 6 n.c. 7 n.c. [1] 4 1 5 1 4,5 6,7 [1] 2 3 aaa-003619 6 7 2 3 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF8G27LS-100V - earless flanged ceramic package; 6 leads SOT1244B BLF8G27LS-100GV - earless flanged ceramic package; 6 leads SOT1244C 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLF8G27LS-100V_27LS-100GV#5 Product data sheet Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C Tj junction temperature - 225 C All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 14 BLF8G27LS-100(G)V Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 48 W 0.292 K/W 6. Characteristics Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1 mA 65 - - V V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 153 mA 1.5 1.9 2.3 IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.2 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 29 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 420 nA gfs forward transconductance VDS = 10 V; ID = 153 mA - 1.27 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5.35 A - 0.1 -  Table 7. RF characteristics Test signal: 2-carrier W-CDMA, 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on the CCDF; f1 = 2502.5 MHz; f2 = 2507.5 MHz; f3 = 2692.5 MHz; f4 = 2697.5 MHz; RF performance at VDS = 28 V; IDq = 900 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 25 W 15.8 17 - dB D drain efficiency PL(AV) = 25 W 25 28 - % RLin input return loss PL(AV) = 25 W - 10 - dB ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 25 W - 32 26 dBc 7. Test information 7.1 Ruggedness in class-AB operation The BLF8G27LS-100V and BLF8G27LS-100GV are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 900 mA; PL = 100 W; f = 2500 MHz. BLF8G27LS-100V_27LS-100GV#5 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 14 BLF8G27LS-100(G)V Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance Measured load-pull data; IDq = 900 mA; VDS = 28 V (main transistor). f ZS[1] ZL[1] (MHz) () () 2500 1.2  j4.6 2.7  j2.7 2600 2.3  j5.5 2.5  j2.5 2700 3.8  j5.2 2.1  j2.6 2500 1.7  j7.4 2.4  j4.9 2600 2.8  j8.0 2.2  j5.2 2700 4.0  j7.9 2.0  j5.3 BLF8G27LS-100V BLF8G27LS-100GV [1] ZS and ZL defined in Figure 1. drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.3 VBW in class-AB operation The BLF8G27LS-100V and BLF8G27LS-100GV show 110 MHz (typical) video bandwidth in class-AB test circuit in 2.6 GHz band at VDS = 28 V and IDq = 0.9 A. BLF8G27LS-100V_27LS-100GV#5 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 14 BLF8G27LS-100(G)V Power LDMOS transistor 7.4 Test circuit C10 C1 R1 C5 C6 C3 R2 C9 C2 C7 C4 C8 C11 aaa-005639 Printed-Circuit Board (PCB): Rogers RO4350B; r = 3.5; thickness = 0.762 mm. See Table 9 for list of components. Fig 2. Component layout for test circuit Table 9. List of components For test circuit, see Figure 2. BLF8G27LS-100V_27LS-100GV#5 Product data sheet Component Description Value Remarks C1, C2, C9 multilayer ceramic chip capacitor 20 pF ATC600F C3, C4, C6, C8 multilayer ceramic chip capacitor 10 F Murata C5, C7 multilayer ceramic chip capacitor 0.1 F Murata C10, C11 electrolytic capacitor 1000 F, 100 V R1, R2 chip resistor 9.1  All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 Vishay Dale SMD 0805 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 14 BLF8G27LS-100(G)V Power LDMOS transistor 7.5 Graphical data 7.5.1 Pulsed CW aaa-005640 18 60 Gp (dB) ηD (%) Gp 17 45 (1) (2) (3) 16 30 ηD 15 15 14 0 30 60 90 120 PL (W) 0 150 VDS = 28 V; IDq = 900 mA. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz Fig 3. Power gain and drain efficiency as function of load power; typical values 7.5.2 1-Tone CW aaa-005641 18 60 Gp (dB) ηD (%) 17 48 Gp 16 36 (1) (2) (3) 15 24 ηD 14 12 13 0 30 60 90 120 PL (W) 0 150 VDS = 28 V; IDq = 900 mA. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz Fig 4. BLF8G27LS-100V_27LS-100GV#5 Product data sheet Power gain and drain efficiency as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 14 BLF8G27LS-100(G)V Power LDMOS transistor 7.5.3 1-Carrier W-CDMA aaa-005642 18 40 Gp Gp (dB) ηD (%) (1) (2) (3) 17 30 ηD 14 0 10 -40 20 30 40 PL (W) 20 -50 10 -60 0 -70 50 -40 -50 ACPR10M -70 5 10 (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Power gain and drain efficiency as function of load power; typical values BLF8G27LS-100V_27LS-100GV#5 Product data sheet 15 20 25 30 35 PL (W) 40 VDS = 28 V; IDq = 900 mA. (1) f = 2500 MHz Fig 5. -60 (1) (2) (3) 0 VDS = 28 V; IDq = 900 mA. -30 ACPR10M (dBc) (1) (2) (3) ACPR5M 16 15 aaa-005643 -30 ACPR5M (dBc) Fig 6. Adjacent channel power ratio (5 MHz) and Adjacent channel power ratio (10 MHz) as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 14 BLF8G27LS-100(G)V Power LDMOS transistor 7.5.4 2-Carrier W-CDMA aaa-005645 18 Gp (dB) 40 Gp -24 (1) (2) (3) 17 aaa-005646 -20 ACPR5M (dBc) ηD (%) -20 ACPR10M (dBc) -24 30 (1) (2) (3) -28 16 -28 ACPR5M 20 (1) -32 15 -32 (2) (3) 10 ηD -36 -36 ACPR10M 14 0 0 10 20 30 40 PL (W) -40 50 -40 0 VDS = 28 V; IDq = 900 mA. 10 30 40 PL (W) 50 VDS = 28 V; IDq = 900 mA. (1) f = 2500 MHz (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 7. 20 Power gain and drain efficiency as function of load power; typical values Fig 8. Adjacent channel power ratio (5 MHz) and Adjacent channel power ratio (10 MHz) as function of load power; typical values 7.5.5 2-Tone VBW aaa-005647 -10 IMD (dBc) -20 (1) (2) IMD3 -30 IMD5 -40 (1) (2) IMD7 -50 (1) (2) -60 -70 1 10 102 carrier spacing (MHz) 103 VDS = 28 V; IDq = 900 mA; fc = 2600 MHz. (1) IMD low (2) IMD high Fig 9. BLF8G27LS-100V_27LS-100GV#5 Product data sheet VBW capability in class-AB test circuit All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 14 BLF8G27LS-100(G)V Power LDMOS transistor 8. Package outline Earless flanged ceramic package; 6 leads SOT1244B D A F 3 D1 C U1 B e c v 4 1 A 5 y U2 H E1 E A 6 2 7 Q b1 b w2 B 0 scale Dimensions Unit(1) b b1 c max 4.75 nom min 3.45 1.41 12.83 0.18 1.14 12.57 0.10 max 0.187 inches nom min 0.136 0.055 0.505 0.007 0.788 0.786 mm 10 mm 5 A D D1 20.02 19.96 Q(2) U1 E E1 F 9.53 9.53 1.14 19.94 1.70 20.70 9.91 9.27 9.27 0.89 18.92 1.45 20.45 9.65 e H U2 v y 0.25 0.25 0.25 18.03 19.61 19.66 0.375 0.375 0.045 0.785 0.067 0.815 0.39 0.01 0.01 0.01 0.710 0.045 0.495 0.004 0.772 0.774 0.365 0.365 0.035 0.745 0.057 0.805 0.38 Note 1. Millimeter dimensions are derived from the original inch dimensions. 2. Dimension is measured 0.030 inch (0.76 mm) from body. Outline version w2 References IEC JEDEC JEITA sot1244b_po European projection Issue date 12-04-18 12-05-07 SOT1244B Fig 10. Package outline SOT1244B BLF8G27LS-100V_27LS-100GV#5 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 14 BLF8G27LS-100(G)V Power LDMOS transistor Earless flanged ceramic package; 6 leads SOT1244C 0.3 mm gauge plane D Lp F A 3 D1 y Q detail X v A U1 4 H c B 1 X 5 E1 U2 6 A 2 7 b1 b E w2 B θ e 5 0 10 mm scale Dimensions Unit(1) b b1 c max 4.75 nom min 3.45 1.41 12.83 0.18 20.02 19.96 1.14 12.57 0.10 19.61 19.66 max 0.187 inches nom min 0.136 0.055 0.505 0.007 0.788 0.786 0.045 0.495 0.004 0.772 0.774 mm A D D1 e E E1 F H 9.53 9.53 1.14 14.3 1.38 0.195 20.70 9.91 9.27 9.27 0.89 14.1 0.98 0.055 20.45 9.65 Lp Q U1 U2 w2 y θ 0.25 0.25 0.15 7° 0.01 0.01 0.006 0° 7° 18.03 0.375 0.375 0.045 0.563 0.055 0.008 0.815 0.39 0.710 References IEC JEDEC 0° 0.365 0.365 0.035 0.555 0.039 0.002 0.805 0.38 Note 1. Millimeter dimensions are derived from the original inch dimensions. Outline version v JEITA sot1244c_po European projection Issue date 12-05-10 12-05-30 SOT1244C Fig 11. Package outline SOT1244C BLF8G27LS-100V_27LS-100GV#5 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 14 BLF8G27LS-100(G)V Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge IMD InterModulation Distortion LDMOS Laterally Diffused Metal Oxide Semiconductor PAR Peak-to-Average Ratio SMD Surface Mounted Device VBW Video BandWidth VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 11. Revision history Document ID Release date Data sheet status BLF8G27LS-100V_27LS-100GV#5 20150901 Product data sheet Modifications: Change notice Supersedes BLF8G27LS-100V_27L S-100GV v.4 • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF8G27LS-100V_27LS-100GV v.4 20130926 Product data sheet - BLF8G27LS-100V v.3 BLF8G27LS-100V v.3 20130129 Product data sheet - BLF8G27LS-100V v.2 BLF8G27LS-100V v.2 20121203 Product data sheet - BLF8G27LS-100V v.1 BLF8G27LS-100V v.1 20120817 Objective data sheet - - BLF8G27LS-100V_27LS-100GV#5 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 14 BLF8G27LS-100(G)V Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLF8G27LS-100V_27LS-100GV#5 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 14 BLF8G27LS-100(G)V Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com BLF8G27LS-100V_27LS-100GV#5 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 14 BLF8G27LS-100(G)V Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.4.1 7.4.2 7.4.3 7.4.4 7.4.5 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 8 2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Handling information. . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF8G27LS-100V_27LS-100GV#5
BLF8G27LS-100V,118
物料型号: - BLF8G27LS-100V - BLF8G27LS-100GV

器件简介: - 这是一款100W的LDMOS功率晶体管,专为2500 MHz至2700 MHz频率范围内的基站应用设计,具有改善的视频带宽。

引脚分配: - BLF8G27LS-100V (SOT1244B) 和 BLF8G27LS-100GV (SOT1244C) 的引脚分配如下: - 1: drain - 2: gate - 3: source(连接到法兰) - 4, 5: decoupling lead - 6, 7: n.C.(无连接)

参数特性: - 包括但不限于: - 漏源电压(Vps)最大65V - 栅源电压(VGs)在-0.5V至+13V之间 - 存储温度(Tstg)范围-65℃至+150℃ - 结温(T)最高225℃

功能详解: - 该晶体管具有以下特点和优势: - 出色的坚固性 - 高效率 - 低Rth值提供优秀的热稳定性 - 解耦引线以改善视频带宽(典型值110 MHz) - 设计用于宽带操作(2500 MHz至2700 MHz) - 较低的输出电容,提高Doyley应用中的性能 - 设计用于降低记忆效应,提供优秀的预失真能力 - 内部匹配,易于使用 - 符合有害物质限制指令2002/95/EC(RoHS)

应用信息: - 适用于2500 MHz至2700 MHz频率范围内的基站和多载波应用的射频功率放大器。

封装信息: - 提供两种封装类型:SOT1244B和SOT1244C,均为无耳法兰陶瓷封装,共6个引脚。
BLF8G27LS-100V,118 价格&库存

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