BLL8H1214L-500U

BLL8H1214L-500; BLL8H1214LS-500 LDMOS L-band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 150 mA; in a class-AB production test circuit. Test signal pulsed RF f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) 1.2 to 1.4 50 500 17 50 20 6 1.2 Features and benefits          Easy power control Integrated dual side ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1.2 GHz to 1.4 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3 Applications  L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range BLL8H1214L(S)-500 LDMOS L-band radar power transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLL8H1214L-500 (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 4 5 4 [1] source 2 sym117 BLL8H1214LS-500 (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 4 5 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLL8H1214L-500 - flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A BLL8H1214LS-500 - earless flanged balanced ceramic package; 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 100 V VGS gate-source voltage 6 +13 V Tstg storage temperature 65 +150 C - 225 C Tj [1] junction temperature [1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator. BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Zth(j-c) transient thermal impedance from junction to case Tcase = 85 C; PL = 500 W Unit tp = 100 s;  = 10 % 0.046 K/W tp = 200 s;  = 10 % 0.059 K/W tp = 300 s;  = 10 % 0.069 K/W tp = 100 s;  = 20 % 0.064 K/W 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 100 - - V VDS = 10 V; ID = 270 mA 1.3 1.8 2.2 V V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA VGS(th) gate-source threshold voltage IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 32 42 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 270 mA 1.7 3 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 9.5 A - 100 164 m Table 7. RF characteristics Test signal: pulsed RF; tp = 300 s;  = 10 %; RF performance at VDS = 50 V; IDq = 150 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage PL = 500 W - - 50 V Gp power gain PL = 500 W 15 17 - dB RLin input return loss PL = 500 W - 10 - dB PL(1dB) output power at 1 dB gain compression - 600 - W D drain efficiency PL = 500 W 45 50 - % Pdroop(pulse) pulse droop power PL = 500 W - 0 0.3 dB tr rise time PL = 500 W - 20 50 ns tf fall time PL = 500 W - 6 50 ns 7. Test information 7.1 Ruggedness in class-AB operation The BLL8H1214L-500 and BLL8H1214LS-500 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 150 mA; PL = 500 W; tp = 300 s;  = 10 %. BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor 7.2 Impedance information Table 8. Typical impedance Typical values per section unless otherwise specified. f ZS ZL (GHz) () () 1.2 1.268  j2.623 2.987  j1.664 1.3 2.193  j2.457 2.162  j1.326 1.4 2.359  j2.052 1.604  j1.887 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.3 Test circuit Table 9. List of components For test circuit see Figure 2. Component Description Value C1 multilayer ceramic chip capacitor 22 F, 35 V C2 multilayer ceramic chip capacitor 51 pF [1] C3, C4 multilayer ceramic chip capacitor 100 pF [1] C5, C11, C12 multilayer ceramic chip capacitor 1 nF [2] C6 multilayer ceramic chip capacitor 47 pF [1] C7, C8, C10 multilayer ceramic chip capacitor 51 pF [3] C9 multilayer ceramic chip capacitor 100 pF [3] C13 electrolytic capacitor 10 F, 63 V R1 SMD resistor 56  R2 metal film resistor 51  [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. [3] American Technical Ceramics type 800B or capacitor of same quality. BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 Remarks SMD 0603 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor C10 C1 C3 C2 C4 C12 C5 C8 C11 C9 C13 R1 R2 C6 C7 001aaj490 Printed-Circuit Board (PCB): Duroid 6006; r = 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 m. See Table 9 for a list of components. Fig 2. Component layout for class-AB production test circuit 7.4 RF performance graphs 7.4.1 Performance curves measured with = 10 %, tp = 300 s and Th = 25 C aaa-005403 800 PL (W) aaa-005404 20 Gp (dB) (1) (2) 16 (3) (1) (2) (3) 600 12 400 8 200 4 0 0 0 4 8 12 16 Pi (W) 20 0 VDS = 50 V; IDq = 150 mA. 100 200 400 500 600 PL (W) 700 VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Fig 3. 300 Output power as a function of input power; typical values Fig 4. Power gain as a function of output power; typical values BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor aaa-005405 60 aaa-005406 20 (1) ηD (%) 60 Gp (dB) (2) (3) ηD (%) ηD 18 50 45 Gp 16 40 14 30 12 20 30 15 0 0 100 200 300 400 500 600 PL (W) 10 1150 700 VDS = 50 V; IDq = 150 mA. 1200 1250 1300 1350 1400 f (MHz) 10 1450 VDS = 50 V; PL = 500 W; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 5. Drain efficiency as a function of output power; typical values Fig 6. Power gain and drain efficiency as function of frequency; typical values aaa-005407 25 RLin (dB) 20 15 10 5 0 1150 1200 1250 1300 1350 1400 f (MHz) 1450 VDS = 50 V; PL = 500 W; IDq = 150 mA. Fig 7. Input return loss as a function of frequency; typical value BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor 7.4.2 Performance curves measured with  = 10 %, tp = 300 s and Th = 65 C aaa-005408 800 PL (W) aaa-005409 20 Gp (dB) (1) (2) 600 (3) (1) (2) (3) 17.5 400 15 200 12.5 0 10 0 5 10 15 20 Pi (W) 25 0 VDS = 50 V; IDq = 150 mA. 100 200 (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Output power as a function of input power; typical values Fig 9. aaa-005410 60 400 500 600 PL (W) 700 VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz Fig 8. 300 ηD (%) Power gain as a function of output power; typical values aaa-005411 20 60 Gp (dB) ηD (%) (1) 50 18 50 ηD (2) 40 (3) 16 40 Gp 30 14 30 12 20 20 10 0 0 100 200 300 400 500 600 PL (W) 700 VDS = 50 V; IDq = 100 mA. 10 1150 1200 1250 1300 1350 1400 f (MHz) 10 1450 VDS = 50 V; PL = 500 W; IDq = 100 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 10. Drain efficiency as a function of output power; typical values Fig 11. Power gain and drain efficiency as function of frequency; typical values BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor 7.4.3 Performance curves measured with  = 10 %, tp = 300 s and f = 1300 MHz 001aal688 700 001aal689 20 PL (W) Gp (dB) 600 18 (1) 500 (2) (3) 16 400 (1) (2) (3) 300 14 200 12 100 0 10 0 5 10 15 20 25 0 100 200 300 400 500 Pi (W) VDS = 50 V; IDq = 150 mA. 600 700 PL (W) VDS = 50 V;IDq = 150 mA. (1) Th = 40 C (1) Th = 40 C (2) Th = +25 C (2) Th = +25 C (3) Th = +65 C (3) Th = +65 C Fig 12. Output power as a function of input power; typical values Fig 13. Power gain as a function of output power; typical values 001aal690 60 (1) (2) ηD (%) (3) 40 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V;IDq = 150 mA. (1) Th = 40 C (2) Th = +25 C (3) Th = +65 C Fig 14. Drain efficiency as a function of output power; typical values BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor 7.4.4 Performance curves measured with  = 20 %, tp = 500 s and Th = 25 C 001aal691 700 PL (W) 001aal692 20 Gp (dB) 600 16 (1) 500 (1) (2) (2) (3) (3) 12 400 300 8 200 4 100 0 0 0 5 10 15 20 25 0 100 200 300 400 500 Pi (W) VDS = 50 V; IDq = 150 mA. 600 700 PL (W) VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Fig 15. Output power as a function of input power; typical values 001aal693 60 (1) ηD (%) Fig 16. Power gain as a function of output power; typical values 001aal694 20 Gp (dB) 45 Gp (3) 40 ηD (%) ηD 18 (2) 55 16 35 14 25 12 15 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; IDq = 150 mA. 10 1.15 1.25 5 1.45 1.35 f (GHz) VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 17. Drain efficiency as a function of output power; typical values Fig 18. Power gain and drain efficiency as function of frequency; typical values BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor 7.4.5 Performance curves measured with  = 20 %, tp = 500 s and Th = 65 C 001aal695 700 PL (W) 001aal696 20 Gp (dB) 600 18 (1) 500 (2) 16 (3) 400 (1) (2) 300 (3) 14 200 12 100 0 10 0 5 10 15 20 25 0 100 200 300 400 500 Pi (W) VDS = 50 V; IDq = 150 mA. 600 700 PL (W) VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Fig 19. Output power as a function of input power; typical values 001aal697 60 Fig 20. Power gain as a function of output power; typical values 001aal698 20 Gp (dB) ηD (%) 55 ηD (%) 18 ηD 45 16 Gp 35 (1) 40 (3) (2) 14 25 12 15 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; IDq = 150 mA. 10 1.15 1.25 5 1.45 1.35 f (GHz) VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 21. Drain efficiency as a function of output power; typical values Fig 22. Power gain and drain efficiency as function of frequency; typical values BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor 7.4.6 Performance curves measured with  = 20 %, tp = 500 s and f = 1300 MHz 001aal699 700 001aal700 20 PL (W) Gp (dB) 600 16 (1) (1) 500 (2) (2) (3) (3) 12 400 300 8 200 4 100 0 0 0 5 10 15 20 25 0 100 200 300 400 500 Pi (W) VDS = 50 V; IDq = 150 mA. 600 700 PL (W) VDS = 50 V; IDq = 150 mA. (1) Th = 40 C (1) Th = 40 C (2) Th = +25 C (2) Th = +25 C (3) Th = +65 C (3) Th = +65 C Fig 23. Output power as a function of input power; typical values Fig 24. Power gain as a function of output power; typical values 001aal701 60 ηD (%) (1) (2) 40 (3) 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; IDq = 150 mA. (1) Th = 40 C (2) Th = +25 C (3) Th = +65 C Fig 25. Drain efficiency as a function of output power; typical values BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor 7.4.7 Performance curves measured with  = 10 %, tp = 1 ms and Th = 25 C 001aal702 700 PL (W) 001aal703 20 Gp (dB) 600 16 (1) 500 (1) (2) (2) (3) (3) 12 400 300 8 200 4 100 0 0 0 5 10 15 20 25 0 100 200 300 400 500 Pi (W) VDS = 50 V; IDq = 150 mA. 600 700 PL (W) VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Fig 26. Output power as a function of input power; typical values 001aal704 60 (1) ηD (%) Fig 27. Power gain as a function of output power; typical values 001aal705 20 Gp (dB) (2) 55 ηD (%) ηD 18 45 Gp (3) 40 16 35 14 25 12 15 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; IDq = 150 mA. 10 1.15 1.25 5 1.45 1.35 f (GHz) VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 28. Drain efficiency as a function of output power; typical values Fig 29. Power gain and drain efficiency as function of frequency; typical values BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor 7.4.8 Performance curves measured with  = 10 %, tp = 1 ms and Th = 65 C 001aal706 700 PL (W) 001aal707 20 Gp (dB) 600 16 500 (1) (1) (2) (2) (3) (3) 12 400 300 8 200 4 100 0 0 0 5 10 15 20 25 0 100 200 300 400 500 Pi (W) VDS = 50 V; IDq = 150 mA. 600 700 PL (W) VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Fig 30. Output power as a function of input power; typical values 001aal708 60 Fig 31. Power gain as a function of output power; typical values 001aal709 20 Gp (dB) ηD (%) (1) 55 ηD (%) ηD 18 45 (2) 40 Gp 16 35 (3) 14 25 12 15 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; IDq = 150 mA. 10 1.15 1.25 5 1.45 1.35 f (GHz) VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 32. Drain efficiency as a function of output power; typical values Fig 33. Power gain and drain efficiency as function of frequency; typical values BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor 7.4.9 Performance curves measured with  = 10 %, tp = 1 ms and f = 1300 MHz 001aal710 700 001aal711 20 PL (W) Gp (dB) 600 16 (1) (1) 500 (2) (2) (3) (3) 12 400 300 8 200 4 100 0 0 0 5 10 15 20 25 0 100 200 300 400 500 Pi (W) VDS = 50 V; IDq = 150 mA. 600 700 PL (W) VDS = 50 V; IDq = 150 mA. (1) Th = 40 C (1) Th = 40 C (2) Th = +25 C (2) Th = +25 C (3) Th = +65 C (3) Th = +65 C Fig 34. Output power as a function of input power; typical values Fig 35. Power gain as a function of output power; typical values 001aal712 60 (1) ηD (%) (2) (3) 40 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; IDq = 150 mA. (1) Th = 40 C (2) Th = +25 C (3) Th = +65 C Fig 36. Drain efficiency as a function of output power; typical values BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 14 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor 8. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 10-02-02 12-05-02 SOT539A Fig 37. Package outline SOT539A BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 15 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) A b 4.7 11.81 w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 0.54 inches nom 0.01 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 mm max nom min c D D1 0.18 31.55 31.52 E E1 9.5 9.53 e F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.39 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 4.2 11.56 0.10 30.94 30.96 9.3 9.27 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot539b_po European projection Issue date 12-05-02 13-05-24 SOT539B Fig 38. Package outline SOT539B BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 16 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description ESD ElectroStatic Discharge L-band Long wave Band LDMOS Laterally Diffused Metal-Oxide Semiconductor MTF Median Time to Failure SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status BLL8H1214L-500_1214LS-500 #3 20150901 Modifications: Product data sheet Change notice Supersedes - BLL8H1214L-500_1214LS-500 #2 • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLL8H1214L-500_1214LS-500 #2 20150209 Product data sheet - BLL8H1214L-500_1214LS-500 #1 20140930 Objective data sheet - BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 BLL8H1214L-500_1214LS-500 #1 - © Ampleon The Netherlands B.V. 2015. All rights reserved. 17 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor 12. 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In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 18 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLL8H1214L-500_1214LS-500#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 19 of 20 BLL8H1214L(S)-500 LDMOS L-band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.4.1 7.4.2 7.4.3 7.4.4 7.4.5 7.4.6 7.4.7 7.4.8 7.4.9 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 RF performance graphs . . . . . . . . . . . . . . . . . . 5 Performance curves measured with  = 10 %, tp = 300 s and Th = 25 °C . . . . . . . . . . . . . . . . 5 Performance curves measured with  = 10 %, tp = 300 s and Th = 65 °C . . . . . . . . . . . . . . . . 7 Performance curves measured with  = 10 %, tp = 300 s and f = 1300 MHz. . . . . . . . . . . . . . 8 Performance curves measured with  = 20 %, tp = 500 s and Th = 25 °C . . . . . . . . . . . . . . . . 9 Performance curves measured with  = 20 %, tp = 500 s and Th = 65 °C . . . . . . . . . . . . . . . 10 Performance curves measured with  = 20 %, tp = 500 s and f = 1300 MHz. . . . . . . . . . . . . 11 Performance curves measured with  = 10 %, tp = 1 ms and Th = 25 °C. . . . . . . . . . . . . . . . . 12 Performance curves measured with  = 10 %, tp = 1 ms and Th = 65 °C. . . . . . . . . . . . . . . . . 13 Performance curves measured with  = 10 %, tp = 1 ms and f = 1300 MHz . . . . . . . . . . . . . . 14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 Handling information. . . . . . . . . . . . . . . . . . . . 17 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Contact information. . . . . . . . . . . . . . . . . . . . . 19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLL8H1214L-500_1214LS-500#3