BLS6G2735LS-30,112

BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA. Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) Typical RF performance in a class-AB production test circuit in band 3.1 GHz to 3.5 GHz pulsed RF 3.1 to 3.5 32 30 13 50 20 10 Typical RF performance in an application circuit in small band 2.7 GHz to 3.3 GHz pulsed RF 2.7 to 3.3 32 35 14 50 20 10 Typical RF performance in an application circuit in small band 2.7 GHz to 3.5 GHz pulsed RF 2.7 to 3.5 32 30 12 47 20 10 1.2 Features and benefits        Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7 GHz to 3.5 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  S-band radar applications in the frequency range 2.7 GHz to 3.5 GHz BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLS6G2735L-30 (SOT1135A) 1 drain 2 gate 3 source 1 1 [1] 2 3 3 sym112 2 BLS6G2735LS-30 (SOT1135B) 1 drain 2 gate 3 source 1 1 [1] 2 3 3 sym112 2 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLS6G2735L-30 - flanged ceramic package; 2 mounting holes; 2 leads SOT1135A BLS6G2735LS-30 - earless flanged ceramic package; 2 leads SOT1135B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLS6G2735L-30_6G2735LS-30#4 Product data sheet Symbol Parameter Min Max Unit VDS drain-source voltage - 60 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C Tj junction temperature - 225 C All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 17 BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Zth(j-c) transient thermal impedance from junction Th = 85 C; PL(CW) = 30 W to case t = 100 s;  = 10 % 0.507 K/W tp = 200 s;  = 10 % 0.662 K/W tp = 300 s;  = 10 % 0.761 K/W tp = 100 s;  = 20 % 0.594 K/W Conditions Typ p Unit 6. Characteristics Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 40 mA 1.4 2 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 8.2 - A IGSS gate leakage current VGS = 8.3 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 1.4 A - 2.8 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 1.4 A - 0.37 0.58  Table 7. RF characteristics Test signal: pulsed RF; f1 = 3100 MHz; f2 = 3300 MHz; f3 = 3500 MHz; tp = 300 s;  = 10 %; VDS = 32 V; IDq = 50 mA; Tcase = 25 C; unless otherwise specified, in the class-AB RF production test circuit. BLS6G2735L-30_6G2735LS-30#4 Product data sheet Symbol Parameter PL output power Gp power gain D drain efficiency tr tf Min Typ Max Unit - 30 - W PL = 30 W 11 13 - dB PL = 30 W 43 50 - % rise time PL = 30 W - 20 50 ns fall time PL = 30 W - 10 50 ns All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 Conditions © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 17 BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 7. Application information 7.1 Circuit information for application circuit (2.7 GHz to 3.5 GHz) VDD C6 C5 C2 C4 C1 C3 VGG C7 aaa-001308 Printed-Circuit Board (PCB): Rogers 3006; r = 6.15; thickness = 0.64 mm; thickness copper plating = 35 m. See Table 8 for a list of components. Fig 1. Component layout for RF test circuit Table 8. List of components For test circuit see Figure 1. Component BLS6G2735L-30_6G2735LS-30#4 Product data sheet Description Value C1 multilayer ceramic chip capacitor 2 F, 50 V [1] C2 multilayer ceramic chip capacitor 100 pF [2] C3 multilayer ceramic chip capacitor 0.6 pF [2] C4, C7 multilayer ceramic chip capacitor 10 pF [2] C5 multilayer ceramic chip capacitor 1 F, 50 V [1] C6 electrolytic capacitor 470 F, 63 V [1] TDK or capacitor of same quality. [2] American Technical Ceramics type 800A or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 Remarks © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 17 BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 7.2 Measured in application circuit from 2.7 GHz to 3.5 GHz aaa-001302 35 Gp (dB) 30 (5) (4) (3) (2) (1) 70 ηD (%) 60 aaa-001303 50 (1) PL (W) ηD (2) (3) 40 25 (4) (5) 50 (6) 40 20 Gp 15 (8) (9) 30 20 20 10 (5) (4) (3) (2) (1) 10 10 5 0 (7) 30 0 10 20 30 40 PL (W) 50 0 0 VDS = 32 V; IDq = 50 mA; tp = 300 s;  = 10 % 0 1 2 3 Pi (W) 4 VDS = 32 V; IDq = 50 mA; tp = 300 s;  = 10 % (1) f = 2700 MHz (1) f = 2700 MHz (2) f = 2900 MHz (2) f = 2800 MHz (3) f = 3100 MHz (3) f = 2900 MHz (4) f = 3300 MHz (4) f = 3000 MHz (5) f = 3500 MHz (5) f = 3100 MHz (6) f = 3200 MHz (7) f = 3300 MHz (8) f = 3400 MHz (9) f = 3500 MHz Fig 2. Power gain and drain efficiency as function of output power; typical values BLS6G2735L-30_6G2735LS-30#4 Product data sheet Fig 3. Output power as a function of input power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 17 BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor aaa-001304 20 RLin (dB) (1) (2) (3) (4) (5) (6) (7) (8) (9) 15 10 5 0 28 33 38 43 PL (dBm) 48 VDS = 32 V; IDq = 50 mA; tp = 300 s;  = 10 % (1) f = 2700 MHz (2) f = 2800 MHz (3) f = 2900 MHz (4) f = 3000 MHz (5) f = 3100 MHz (6) f = 3200 MHz (7) f = 3300 MHz (8) f = 3400 MHz (9) f = 3500 MHz Fig 4. BLS6G2735L-30_6G2735LS-30#4 Product data sheet Input return loss as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 17 BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor aaa-001305 35 Gp (dB) 30 (5) (4) (3) (2) (1) 70 ηD (%) 60 aaa-001306 50 (1) PL (W) ηD (2) (3) 40 25 50 20 40 (4) (5) (6) Gp 15 (8) (9) 30 20 20 10 (5) (4) (3) (2) (1) 10 10 5 0 (7) 30 0 10 20 30 40 PL (W) 50 0 0 VDS = 32 V; IDq = 50 mA; tp = 100 s;  = 20 % 0 1 2 3 Pi (W) 4 VDS = 32 V; IDq = 50 mA; tp = 100 s;  = 20 % (1) f = 2700 MHz (1) f = 2700 MHz (2) f = 2900 MHz (2) f = 2800 MHz (3) f = 3100 MHz (3) f = 2900 MHz (4) f = 3300 MHz (4) f = 3000 MHz (5) f = 3500 MHz (5) f = 3100 MHz (6) f = 3200 MHz (7) f = 3300 MHz (8) f = 3400 MHz (9) f = 3500 MHz Fig 5. Power gain and drain efficiency as function of output power; typical values BLS6G2735L-30_6G2735LS-30#4 Product data sheet Fig 6. Output power as a function of input power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 17 BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor aaa-001307 20 RLin (dB) (1) (2) (3) (4) (5) (6) (7) (8) (9) 15 10 5 0 28 33 38 43 PL (dBm) 48 VDS = 32 V; IDq = 50 mA; tp = 100 s;  = 20 % (1) f = 2700 MHz (2) f = 2800 MHz (3) f = 2900 MHz (4) f = 3000 MHz (5) f = 3100 MHz (6) f = 3200 MHz (7) f = 3300 MHz (8) f = 3400 MHz (9) f = 3500 MHz Fig 7. BLS6G2735L-30_6G2735LS-30#4 Product data sheet Input return loss as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 17 BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 8. Test information 8.1 Ruggedness in class-AB operation The BLS6G2735L-30 and BLS6G2735LS-30 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 50 mA; PL = 30 W; tp = 300 s;  = 10 %. 8.2 Impedance information Table 9. Typical impedance Source and load impedances obtained in a wideband test circuit. f ZS ZL GHz   2.7 3.4  j16.0 32.7  j3.8 2.9 4.3  j13.0 20.3  j4.2 3.1 5.4  j11.6 18.3  j3.9 3.3 5.4  j12.0 15.0  j7.2 3.5 3.7  j11.7 8.4  j6.6 drain ZL gate ZS 001aaf059 Fig 8. BLS6G2735L-30_6G2735LS-30#4 Product data sheet Definition of transistor impedance All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 17 BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 8.3 Circuit information for production test circuit (3.1 GHz to 3.5 GHz) C7 VGG C5 C3 C6 VDD C4 C2 R1 C1 C8 3100 MHz - 3500 MHz 3100 MHz - 3500 MHz aaa-004510 Printed-Circuit Board (PCB): Rogers Duroid 6006; r = 6.15; thickness = 0.64 mm; thickness copper plating = 35 m. See Table 10 for a list of components. Fig 9. Component layout for RF production test circuit Table 10. List of components For test circuit see Figure 9. BLS6G2735L-30_6G2735LS-30#4 Product data sheet Component Description Value C1, C3, C4, C8 multilayer ceramic chip capacitor 10 pF [1] C2 multilayer ceramic chip capacitor 1 F [2] C5 multilayer ceramic chip capacitor 4.7 F, 50 V [2] C6 multilayer ceramic chip capacitor 10 F, 50 V [2] C7 electrolytic capacitor 100 F, 63 V R1 SMD resistor 10  [1] American Technical Ceramics type 800A or capacitor of same quality. [2] TDK or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 Remarks © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 17 BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 8.4 Measured in RF production test circuit from 3.1 GHz to 3.5 GHz aaa-004692 18 Gp (dB) 40 40 30 (1) (2) (3) 9 20 20 3 10 10 0 10 (1) (2) (3) 30 ηD 6 0 PL (W) 50 12 aaa-004693 50 ηD (%) Gp 15 60 20 30 40 PL (W) 50 0 0 VDS = 32 V; IDq = 50 mA; tp = 300 s;  = 10 % 0 1 (1) f = 3100 MHz (2) f = 3300 MHz (2) f = 3300 MHz (3) f = 3500 MHz (3) f = 3500 MHz Fig 10. Power gain and drain efficiency as function of output power; typical values aaa-004694 Gp (dB) 15 PL (W) 40 40 30 (1) (2) (3) 9 20 20 3 10 0 10 (1) (2) (3) 30 ηD 6 0 5 aaa-004695 50 50 12 4 Pi (W) Fig 11. Output power as a function of input power; typical values 60 ηD (%) Gp 3 VDS = 32 V; IDq = 50 mA; tp = 300 s;  = 10 % (1) f = 3100 MHz 18 2 20 30 40 PL (W) 50 0 VDS = 32 V; IDq = 50 mA; tp = 100 s;  = 20 % 10 0 0 1 (1) f = 3100 MHz (2) f = 3300 MHz (2) f = 3300 MHz (3) f = 3500 MHz (3) f = 3500 MHz BLS6G2735L-30_6G2735LS-30#4 Product data sheet 3 4 Pi (W) 5 VDS = 32 V; IDq = 50 mA; tp = 100 s;  = 20 % (1) f = 3100 MHz Fig 12. Power gain and drain efficiency as function of output power; typical values 2 Fig 13. Output power as a function of input power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 17 BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT1135A D A F D1 U1 B q C c 1 H p U2 E1 w1 3 E B A A 2 b w2 C 0 5 mm 10 mm scale Dimensions Unit(1) Q A max 4.65 nom min 3.76 b 5.26 c D D1 E E1 F 0.18 9.65 9.65 9.65 9.65 1.14 H p Q 19.94 3.30 1.70 q U1 U2 0.10 9.40 9.40 9.40 9.40 0.89 18.92 2.92 w2 20.45 9.91 15.24 5.00 w1 1.45 max 0.183 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.785 0.130 0.067 inches nom 0.6 min 0.148 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.745 0.115 0.057 0.25 0.51 20.19 9.65 0.805 0.39 0.01 0.02 0.795 0.38 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version References IEC JEDEC JEITA sot1135a_po European projection Issue date 09-10-12 09-12-14 SOT1135A Fig 14. Package outline SOT1135A BLS6G2735L-30_6G2735LS-30#4 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 17 BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Earless flanged ceramic package; 2 leads SOT1135B D A F 3 D1 D U1 c 1 H U2 E1 2 b w2 D 0 Q 5 10 mm scale Dimensions Unit(1) A max 4.65 nom min 3.76 b c D D1 E E1 F H Q U1 U2 5.26 0.18 9.65 9.65 9.65 9.65 1.14 19.94 1.70 9.91 9.91 5.00 0.10 9.40 9.40 9.40 9.40 0.89 18.92 1.45 9.65 9.65 max 0.183 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.785 0.067 inches nom min 0.148 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.745 0.057 0.39 0.39 0.38 0.38 mm E w2 0.51 0.02 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version References IEC JEDEC JEITA sot1135b_po European projection Issue date 09-10-12 09-12-14 SOT1135B Fig 15. Package outline SOT1135B BLS6G2735L-30_6G2735LS-30#4 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 17 BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 10. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 11. Abbreviations Acronym Description LDMOS Laterally Diffused Metal-Oxide Semiconductor S-band Short wave Band VSWR Voltage Standing-Wave Ratio 12. Revision history Table 12. Revision history Document ID Release date Data sheet status BLS6G2735L-30_6G2735LS-30#4 20150901 Product data sheet Modifications: Change notice Supersedes BLS6G2735L-30_6G 2735LS-30 v.3 • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLS6G2735L-30_6G2735LS-30 v.3 20120924 Product data sheet - BLS6G2735L-30_ 6G2735LS-30 v.2 BLS6G2735L-30_6G2735LS-30 v.2 20120904 Preliminary data sheet - BLS6G2735L-30_ 6G2735LS-30 v.1 BLS6G2735L-30_6G2735LS-30 v.1 20111011 Objective data sheet - - BLS6G2735L-30_6G2735LS-30#4 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 14 of 17 BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLS6G2735L-30_6G2735LS-30#4 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 15 of 17 BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 14. Contact information For more information, please visit: http://www.ampleon.com BLS6G2735L-30_6G2735LS-30#4 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 16 of 17 BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 15. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 8.4 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Circuit information for application circuit (2.7 GHz to 3.5 GHz) . . . . . . . . . . . . . . . . . . . . 4 Measured in application circuit from 2.7 GHz to 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Ruggedness in class-AB operation . . . . . . . . . 9 Impedance information . . . . . . . . . . . . . . . . . . . 9 Circuit information for production test circuit (3.1 GHz to 3.5 GHz) . . . . . . . . . . . . . . . . . . . 10 Measured in RF production test circuit from 3.1 GHz to 3.5 GHz . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Handling information. . . . . . . . . . . . . . . . . . . . 14 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLS6G2735L-30_6G2735LS-30#4