BLA6H1011-600,112

BLA6H1011-600 LDMOS avionics power transistor Rev. 02 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f VDS PL Gp D tr tf (MHz) (V) (W) (dB) (%) (ns) (ns) 1030 to 1090 48 600 17 52 11 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 s with  of 2 %:  Output power = 600 W  Power gain = 17 dB  Efficiency = 52 %  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1030 MHz to 1090 MHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) BLA6H1011-600 LDMOS avionics power transistor 1.3 Applications  600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 Simplified outline 1 Graphic symbol 1 2 5 3 3 4 5 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLA6H1011-600 Package Name Description Version - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 100 V VGS gate-source voltage 0.5 13 V ID drain current - 72 A Tstg storage temperature 65 +150 C Tj junction temperature - 200 C Typ Unit tp = 100 s;  = 10 % 0.06 K/W tp = 50 s;  = 2 % 0.035 K/W 5. Thermal characteristics Table 5. BLA6H1011-600#2 Product data sheet Thermal characteristics Symbol Parameter Conditions Zth(j-case) transient thermal impedance from junction to case Tcase = 85 C; PL = 600 W All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 13 BLA6H1011-600 LDMOS avionics power transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA Min Typ Max Unit 100 - - VGS(th) gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.25 1.8 2.25 V V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 32 42 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 270 mA 1.6 3 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 9.5 A - 100 169 m Table 7. RF characteristics Mode of operation: pulsed RF; tp = 50 s;  = 2 %; RF performance at VDS = 48 V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit. Symbol Parameter PL output power VDS drain-source voltage Gp Conditions Min Typ Max Unit 600 - - W PL = 600 W - - 48 V power gain PL = 600 W 16 17 - dB RLin input return loss PL = 600 W PL(1dB) output power at 1 dB gain compression D drain efficiency Pdroop(pulse) 8 12 - dB - 700 - W PL = 600 W 47 52 - % pulse droop power PL = 600 W - 0 0.3 dB tr rise time PL = 600 W - 11 30 ns tf fall time PL = 600 W - 5 30 ns 6.1 Ruggedness in class-AB operation The BLA6H1011-600 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 48 V; IDq = 100 mA; PL = 600 W; tp = 50 s;  = 2 %; f = 1030 MHz. BLA6H1011-600#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 13 BLA6H1011-600 LDMOS avionics power transistor 7. Application information 7.1 Impedance information Table 8. Typical impedance Typical values per section unless otherwise specified. f ZS ZL MHz   1030 1.702  j1.816 0.977 + j0.049 1060 1.815  j1.760 1.033 + j0.221 1090 1.912  j1.751 1.086 + j0.379 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.2 Performance curves 001aal832 20 Gp (dB) (1) ηD (%) (2) 16 001aal833 60 (1) (2) 40 12 8 20 4 0 0 0 300 600 900 0 200 PL (W) (1) f = 1030 MHz (2) f = 1090 MHz (2) f = 1090 MHz Power gain as a function of load power; typical values Product data sheet 800 Th = 25 C; VDS = 48 V; IDq = 100 mA; tp = 50 s;  = 2 %. (1) f = 1030 MHz BLA6H1011-600#2 600 PL (W) Th = 25 C; VDS = 48 V; IDq = 100 mA; tp = 50 s;  = 2 %. Fig 2. 400 Fig 3. Drain efficiency as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 13 BLA6H1011-600 LDMOS avionics power transistor 001aal834 20 RLin (dB) 001aal835 800 (1) PL (W) (2) 16 600 12 400 8 200 4 0 1025 0 1035 1045 1055 1065 1075 1085 1095 f (MHz) 0 6 12 18 Pi (W) Th = 25 C; PL = 600 W; VDS = 48 V; IDq = 100 mA; tp = 50 s;  = 2 %. Th = 25 C; VDS = 48 V; IDq = 100 mA; tp = 50 s;  = 2 %. (1) f = 1030 MHz (2) f = 1090 MHz Fig 4. Input return loss as a function of frequency; typical values Fig 5. 001aal836 20 Gp (dB) 001aal837 60 ηD (%) (1) 16 Load power as a function of input power; typical values (2) (1) 40 (2) 12 8 20 4 0 0 0 200 400 600 800 0 200 PL (W) Product data sheet Th = 65 C; VDS = 48 V; IDq = 100 mA; tp = 50 s;  = 2 %. (2) f = 1090 MHz Power gain as a function of load power; typical values BLA6H1011-600#2 800 (1) f = 1030 MHz (2) f = 1090 MHz Fig 6. 600 PL (W) Th = 65 C; VDS = 48 V; IDq = 100 mA; tp = 50 s;  = 2 %. (1) f = 1030 MHz 400 Fig 7. Drain efficiency as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 13 BLA6H1011-600 LDMOS avionics power transistor 001aal838 800 PL (W) (1) (2) 600 400 200 0 0 4 8 12 16 20 Pi (W) Th = 65 C; VDS = 48 V; IDq = 100 mA; tp = 50 s;  = 2 %. (1) f = 1030 MHz (2) f = 1090 MHz Fig 8. Load power as a function of input power; typical values 7.3 Curves measured under Mode-S ELM pulse-conditions 001aal839 21 Gp (dB) 001aal840 80 ηD (%) 19 (1) (1) (2) 60 (2) 17 (3) 40 15 20 13 11 0 0 200 400 600 800 0 200 400 PL (W) f = 1030 MHz; IDq = 100 mA. 600 800 PL (W) f = 1030 MHz; IDq = 100 mA. (1) Th = 40 C (1) Th = 25 C (2) Th = +25 C (2) Th = 65 C (3) Th = +65 C Fig 9. Power gain as a function of load power; typical values BLA6H1011-600#2 Product data sheet Fig 10. Drain efficiency as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 13 BLA6H1011-600 LDMOS avionics power transistor 001aal841 800 (1) PL (W) (2) (3) 600 400 200 0 0 4 8 12 16 Pi (W) f = 1030 MHz; IDq = 100 mA. (1) Th = 40 C (2) Th = +25 C (3) Th = +65 C Fig 11. Load power as a function of input power; typical values 8. Test information Table 9. List of components For test circuit see Figure 12. BLA6H1011-600#2 Product data sheet Component Description Value C1, C4, C7 multilayer ceramic chip capacitor 82 pF C2 multilayer ceramic chip capacitor 22 F; 35 V C3, C5, C8 multilayer ceramic chip capacitor 39 pF [2] C6, C9 multilayer ceramic chip capacitor 1 nF [2] C10 multilayer ceramic chip capacitor 20 nF [3] C11 electrolytic capacitor 47 F; 63 V R1 SMD resistor 56  R2 metal film resistor 51  R3 resistor 11  [1] American Technical Ceramics type 800B or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. [3] American Technical Ceramics type 200B or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 September 2015 Remarks [1] 0603 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 13 BLA6H1011-600 LDMOS avionics power transistor C8 R3 C3 C9 C2 C4 C5 C11 C6 R1 C10 R2 C7 C1 001aal842 Printed-Circuit Board (PCB): Duroid 6006; r = 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 m. See Table 9 for a list of components. Fig 12. Component layout for class-AB production test circuit BLA6H1011-600#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 13 BLA6H1011-600 LDMOS avionics power transistor 9. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 10-02-02 12-05-02 SOT539A Fig 13. Package outline SOT539A BLA6H1011-600#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 13 BLA6H1011-600 LDMOS avionics power transistor 10. Abbreviations Table 10. Abbreviations Acronym Description IFF Identification Friend or Foe LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency SMD Surface Mounted Device TCAS Traffic Collision Avoidance System VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLA6H1011-600#2 20150901 Product data sheet - BLA6H1011-60 0_1 Modifications BLA6H1011-600_1 BLA6H1011-600#2 Product data sheet • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. 20100422 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 September 2015 - - © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 13 BLA6H1011-600 LDMOS avionics power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLA6H1011-600#2 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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Contact information For more information, please visit: http://www.ampleon.com BLA6H1011-600#2 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 13 BLA6H1011-600 LDMOS avionics power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 7.3 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Performance curves . . . . . . . . . . . . . . . . . . . . . 4 Curves measured under Mode-S ELM pulse-conditions . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLA6H1011-600#2