BLF645,112

BLF645 Broadband power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at Th = 25 C in a common source test circuit. VDS PL PL(PEP) Gp D Mode of operation f IMD (MHz) (V) (W) (W) (dB) (%) (dBc) CW, class-AB 1300 32 100 - 18 56 - 2-tone, class-AB 1300 32 - 100 18 45 32 1.2 Features  CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:  Average output power = 100 W  Power gain = 18 dB  Drain efficiency = 56 %  2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:  Peak envelope load power = 100 W  Power gain = 18 dB  Drain efficiency = 45 %  Intermodulation distortion = 32 dBc  Integrated ESD protection  Excellent ruggedness  High power gain  High efficiency  Excellent reliability  Easy power control  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF645 Broadband power LDMOS transistor 1.3 Applications  Communication transmitter applications in the HF to 1400 MHz frequency range  Industrial applications in the HF to 1400 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description 1 drain 1 2 drain 2 3 gate 1 4 gate2 5 source Simplified outline 1 Graphic symbol 1 2 5 3 3 4 5 4 [1] 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLF645 Package Name Description Version - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT540A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage 0.5 +11 V ID drain current - 32 A Tstg storage temperature 65 +150 C Tj junction temperature - 200 C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-c) [1] BLF645#2 Product data sheet Conditions thermal resistance from junction to case Typ Tcase = 80 C; PL = 100 W [1] Unit 0.67 K/W Rth(j-c) is measured under RF conditions. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 14 BLF645 Broadband power LDMOS transistor 6. Characteristics Table 6. Characteristics per section Tj = 25 C per section; unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage Min Typ Max Unit VGS = 0 V; ID = 0.9 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 32 V; ID = 90 mA 1.4 1.9 2.4 V VGSq gate-source quiescent voltage VDS = 32 V; IDq = 450 mA 1.5 2.0 2.5 V IDSS drain leakage current VGS = 0 V; VDS = 32 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 14 - A IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 120 nA gfs forward transconductance VDS = 10 V; ID = 4.5 A - 6.4 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 3.15 A - 220 - m Ciss input capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz - 69 - pF Coss output capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz - 25 - pF Crs feedback capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz - 1.2 - pF 7. Application information Table 7. RF performance in a common-source class-AB circuit Th = 25 C; IDq = 0.9 A for total device. Mode of operation CW, class-AB f VDS PL Gp D (MHz) (V) (W) (dB) (%) 1300 32 100 > 16.5 > 53 7.1 Ruggedness in class-AB operation The BLF645 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; f = 1300 MHz at rated load power. BLF645#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 14 BLF645 Broadband power LDMOS transistor 8. Test information 8.1 RF performance The following figures are measured in a class-AB production test circuit. 8.1.1 1-Tone CW 001aal361 20 Gp (dB) Gp 19 70 ηD (%) Gp (dB) 60 001aal362 20 19 18 18 (7) (6) (5) (4) (3) (2) (1) 50 ηD 17 17 40 16 30 16 15 15 20 14 10 13 0 40 80 14 13 12 0 160 120 0 40 80 120 160 PL (W) PL (W) VDS = 32 V; IDq = 900 mA (for total device); f = 1300 MHz. VDS = 32 V; f = 1300 MHz. (1) IDq = 200 mA (for total device). (2) IDq = 400 mA (for total device). (3) IDq = 600 mA (for total device). (4) IDq = 900 mA (for total device). (5) IDq = 1200 mA (for total device). (6) IDq = 1400 mA (for total device). (7) IDq = 1800 mA (for total device). Fig 1. Power gain and drain efficiency as function of load power; typical values BLF645#2 Product data sheet Fig 2. Power gain as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 14 BLF645 Broadband power LDMOS transistor 001aal363 55 PL (dBm) ideal PL 53 (2) (1) 51 PL 49 47 45 27 29 31 33 35 37 Pi (dBm) VDS = 32 V; IDq = 900 mA (for total device); f = 1300 MHz. (1) PL(1dB) = 50.5 dBm (112 W). (2) PL(3dB) = 51.5 dBm (141 W). Fig 3. BLF645#2 Product data sheet Load power as function of input power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 14 BLF645 Broadband power LDMOS transistor 8.1.2 2-Tone CW 001aal364 20 ηD (%) Gp (dB) 19 001aal365 0 60 IMD3 (dBc) 50 −10 40 −20 30 −30 Gp 18 ηD 17 16 20 −40 15 10 −50 14 0 40 80 0 120 160 PL(PEP) (W) VDS = 32 V; IDq = 900 mA (for total device); f = 1300 MHz; carrier spacing = 100 kHz. −60 (1) (2) (3) (4) (5) (6) (7) 0 40 80 120 160 200 PL(PEP) (W) VDS = 32 V; f = 1300 MHz; carrier spacing = 100 kHz. (1) IDq = 200 mA (for total device). (2) IDq = 400 mA (for total device). (3) IDq = 600 mA (for total device). (4) IDq = 900 mA (for total device). (5) IDq = 1200 mA (for total device). (6) IDq = 1400 mA (for total device). (7) IDq = 1800 mA (for total device). Fig 4. Power gain and drain efficiency as function of peak envelope load power; typical values BLF645#2 Product data sheet Fig 5. Third order intermodulation distortion as a function of peak envelope load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 14 BLF645 Broadband power LDMOS transistor 8.2 Reliability 001aal366 105 Years (1) (2) (3) (4) (5) (6) 104 103 102 (7) (8) (9) (10) (11) 10 1 0 4 8 12 16 20 IDS(DC) (A) TTF (0.1 % failure fraction). (1) Tj = 100 C. (2) Tj = 110 C. (3) Tj = 120 C. (4) Tj = 130 C. (5) Tj = 140 C. (6) Tj = 150 C. (7) Tj = 160 C. (8) Tj = 170 C. (9) Tj = 180 C. (10) Tj = 190 C. (11) Tj = 200 C. Fig 6. BLF645#2 Product data sheet BLF645 electromigration (IDS(DC), total device) All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 14 BLF645 Broadband power LDMOS transistor 8.3 Test circuit VDD C15 VGG C13 C4 R3 T2 C2 IN 50 Ω C1 R1 L8 L6 C6 C8 L3 L4 C9 L1 L10 L12 C10 L14 OUT 50 Ω C17 L13 L5 C7 R2 R5 C11 L9 L7 L11 C12 C3 R4 L2 R6 T1 C5 C14 VGG C16 VDD 001aal367 See Table 8 for a list of components. Fig 7. Class-AB common-source production test circuit + C4 C15 C13 R3 T2 R5 C2 C1 C6 R1 C9 C8 C3 L1 C11 C17 C10 R2 C7 C12 L2 R6 T1 C14 R4 C5 BLF645 INPUT REVZ BLF645 OUTPUT REVZ + C16 001aal368 See Table 8 for a list of components. Fig 8. Component layout for class-AB production test circuit BLF645#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 14 BLF645 Broadband power LDMOS transistor Table 8. List of components For test circuit, see Figure 7 and Figure 8. Component Description Value C1 multilayer ceramic chip capacitor 47 pF [1] C6, C7, C11, C12, multilayer ceramic chip capacitor C17 27 pF [2] C2, C3 Remarks multilayer ceramic chip capacitor 100 nF Murata X7R or equivalent C4, C5, C13, C14 multilayer ceramic chip capacitor 4.7 F TDK C4532X7R1E475MT020U or capacitor of same quality. C8 multilayer ceramic chip capacitor 1.5 pF [2] C9 multilayer ceramic chip capacitor 3.3 pF [2] C10 multilayer ceramic chip capacitor 6.2 pF [3] C15, C16 electrolytic capacitor 220 F L1, L2 4 turns, 0.8 mm enameled copper wire D = 3.5 mm; length = 4 mm L3 microstrip - [4] (W  L) 1.67 mm  19.17 mm - [4] (W  L) 1.9 mm  23.7 mm (W  L) 9.6 mm  17.3 mm L4, L5 microstrip TDK C4532X7R1E475MT020U or capacitor of same quality. L6, L7 microstrip - [4] L8, L9 microstrip - [4] (W  L) 9 mm 12 mm L10, L11 microstrip - [4] (W  L) 8.5 mm  31.0 mm - [4] (W  L) 4.52 mm  5.0 mm [4] L12, L13 microstrip (W  L) 1.67 mm  21.67 mm L14 microstrip - R1, R2 SMD resistor 11  1206 R3, R4 SMD resistor 1 k 1206 R5, R6 SMD resistor 12  1206 T1, T2 semi rigid coax Z = 50 ; length = 34 mm [1] American technical ceramics type 100A or capacitor of same quality. [2] American technical ceramics type 100B or capacitor of same quality. [3] American technical ceramics type 180R or capacitor of same quality. [4] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 m. BLF645#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 14 BLF645 Broadband power LDMOS transistor 9. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT540A D A F D1 U1 B q C w2 M C M H1 1 H c 2 E1 p U2 5 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 5.77 5.00 8.51 8.26 0.15 0.10 inches D D1 e E E1 22.05 22.05 10.26 10.31 10.21 21.64 21.64 10.06 10.01 H F 1.78 1.52 p Q q U1 U2 w1 w2 w3 3.38 3.12 2.72 2.46 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.25 H1 15.75 18.72 14.73 18.47 0.404 0.406 0.070 0.620 0.737 0.133 0.107 0.227 0.335 0.006 0.868 0.868 1.345 0.390 1.100 0.010 0.020 0.010 0.402 0.396 0.394 0.060 0.580 0.727 0.123 0.097 1.335 0.380 0.197 0.325 0.004 0.852 0.852 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-12-28 12-05-02 SOT540A Fig 9. Package outline SOT540A BLF645#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 14 BLF645 Broadband power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description CW Continuous Waveform DC Direct Current D-MOS Diffusion Metal-Oxide Semiconductor ESD ElectroStatic Discharge HF High Frequency LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency SMD Surface-Mount Device VSWR Voltage Standing-Wave Ratio 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF645#2 20150901 Product data sheet - BLF645_1 Modifications: BLF645_1 BLF645#2 Product data sheet • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. 20100127 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 - © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 14 BLF645 Broadband power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLF645#2 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 14 BLF645 Broadband power LDMOS transistor 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. 13. Contact information For more information, please visit: http://www.ampleon.com BLF645#2 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 14 BLF645 Broadband power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 8.1 8.1.1 8.1.2 8.2 8.3 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 4 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF645#2