BLF8G19LS-170BV
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
170 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 1800 MHz to 1990 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
f
IDq
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(mA)
(V)
(W)
(dB)
(%)
(dBc)
2-carrier W-CDMA [1]
1930 to 1990
1300
32
60
18.0
32
31
[2]
1805 to 1880
1300
28
33
19.8
29
40
Test signal
1-carrier W-CDMA
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
[2]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (100 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Integrated current sense
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for W-CDMA base stations and multi carrier applications in the
1800 MHz to 1990 MHz frequency range
BLF8G19LS-170BV
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain
2
gate
3
source
4,5
video decoupling
6
4
1
Graphic symbol
1, 4, 5
5
7
[1]
3
2
6
3
sense gate
7
[1]
Simplified outline
6
sense drain
aaa-004156
7
2
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
BLF8G19LS-170BV -
Version
earless flanged LDMOST ceramic package; 6 leads
SOT1120B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Min
Max
Unit
drain-source voltage
-
65
V
VGS
gate-source voltage
0.5
+13
V
VGS(sense)
sense gate-source voltage
0.5
+9
V
Tstg
storage temperature
65
+150
C
-
225
C
[1]
junction temperature
Tj
[1]
Conditions
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
BLF8G19LS-170BV#4
Product data sheet
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-c)
thermal resistance from junction to case
Tcase = 80 C; PL = 55 W
0.27
K/W
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BLF8G19LS-170BV
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.16 mA
Min
Typ
Max
Unit
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 216 mA
1.5
1.9
2.3
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
4.5
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
40
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
450
nA
gfs
forward transconductance
VDS = 10 V; ID = 10.8 A
-
16
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 7.56 A
-
0.06
-
IDq
quiescent drain current
1175 1300 1425 mA
main transistor:
VDS = 32 V
sense transistor:
IDS = 23.4 mA;
VDS = 30.4 V
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1; 64
DPCH; f1 = 1937.5 MHz; f2 = 1962.5 MHz; f3 = 1982.5 MHz; f4 = 1987.5 MHz; RF performance at
VDS = 32 V; IDq = 1300 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test
circuit.
Symbol
Parameter
Conditions
Min Typ
Max
Unit
Gp
power gain
PL(AV) = 60 W
17.3 18.0
20.2
dB
RLin
input return loss
PL(AV) = 60 W
-
13
7
dB
D
drain efficiency
PL(AV) = 60 W
28
32
-
%
ACPR5M
adjacent channel power ratio (5 MHz)
PL(AV) = 60 W
-
31
28
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G19LS-170BV is capable to withstand a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V;
IDq = 1300 mA; PL = 214 W (CW); f = 1930 MHz and also under the following conditions:
VDS = 28 V; IDq = 1300 mA; PL = 170 W (CW); f = 1805 MHz.
BLF8G19LS-170BV#4
Product data sheet
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Rev. 4 — 1 September 2015
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BLF8G19LS-170BV
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance
IDq = 1300 mA; main transistor VDS = 32 V.
f
ZS[1]
ZL[1]
(MHz)
()
()
1930
1.8 j3.4
1.1 j2.8
1960
1.8 j3.4
1.1 j2.8
1990
1.9 j4.0
1.0 j2.8
[1]
ZS and ZL defined in Figure 1.
drain
ZL
gate
ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.3 VBW in class-AB operation
The BLF8G19LS-170BV shows 100 MHz (typical) video bandwidth in a class-AB test
circuit in the 1900 MHz band at VDS = 32 V and IDq = 1.3 A.
BLF8G19LS-170BV#4
Product data sheet
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Rev. 4 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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BLF8G19LS-170BV
Power LDMOS transistor
7.4 Test circuit
50 mm
50 mm
R3
C10
C18
R5
R4
C3
C14
C17
C5
C11
C12
R2
R1
C1
C6
60 mm
C7
C2
C8
C9
C13
C16
C4
C15
aaa-005995
Printed-Circuit Board (PCB): Taconic RF35; r = 3.5; thickness = 0.765 mm;
thickness copper plating = 35 m.
See Table 9 for a list of components.
Fig 2.
Component layout for class-AB production test circuit
Table 9.
List of components
For test circuit see Figure 2.
Component
Description
Value
C1, C2, C3, C4, C5
multilayer ceramic chip capacitor
10 pF
[1]
ATC100B
0.1 pF
[1]
ATC100B
ATC100B
C6, C8
C7
multilayer ceramic chip capacitor
0.2 pF
[1]
C9, C10
multilayer ceramic chip capacitor
120 pF
[1]
ATC100B
C11, C16, C17
multilayer ceramic chip capacitor
4.7 F, 50 V
[2]
Murata
multilayer ceramic chip capacitor
10 F, 50 V
[2]
Murata
C14, C15
multilayer ceramic chip capacitor
1 F, 50 V
[2]
Murata
C18
electrolytic capacitor
470 F, 63 V
R1
SMD resistor
4.7
Philips 1206
R2
SMD resistor
470
Philips 1206
C12, C13
BLF8G19LS-170BV#4
Product data sheet
multilayer ceramic chip capacitor
Remarks
R3
SMD resistor
820
Philips 1206
R4
SMD resistor
12
Philips 1206
R5
SMD resistor
2200
Philips 1206
[1]
American Technical Ceramics type 100B or capacitor of same quality.
[2]
Murata or capacitor of same quality.
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Rev. 4 — 1 September 2015
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BLF8G19LS-170BV
Power LDMOS transistor
7.5 Graphs
7.5.1 CW pulse
aaa-005996
20
60
Gp
(dB)
ηD
(%)
19
aaa-005997
-5
RLin
(dB)
50
Gp
-10
18
40
(1)
(2)
(3)
17
30
16
20
15
10
-15
(3)
(2)
(1)
-20
ηD
14
0
25
30
35
40
45
50
PL (dBm)
-25
55
25
VDS = 32 V; IDq = 1300 mA; tp = 100 s; = 10 %.
30
(1) f = 1935 MHz
(2) f = 1960 MHz
(2) f = 1960 MHz
(3) f = 1985 MHz
(3) f = 1985 MHz
Power gain and drain efficiency as function of
output power; typical values
BLF8G19LS-170BV#4
Product data sheet
40
45
50
PL (dBm)
55
VDS = 32 V; IDq = 1300 mA; tp = 100 s; = 10 %.
(1) f = 1935 MHz
Fig 3.
35
Fig 4.
Input return loss as a function of
output power; typical values
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BLF8G19LS-170BV
Power LDMOS transistor
7.5.2 2-Carrier W-CDMA
aaa-005998
20
60
50
0
ACPR5M
(dBc)
-10
40
-20
17
30
-30
16
20
-40
10
-50
Gp
(dB)
ηD
(%)
19
aaa-005999
0
ACPR10M
(dBc)
-10
Gp
18
-20
(1)
(2)
(3)
15
(1)
(2)
(3)
-40
ACPR5M
-50
ηD
ACPR10M
14
0
25
30
35
40
45
50
PL (dBm)
-60
55
-60
25
VDS = 32 V; IDq = 1300 mA.
30
35
40
45
50
PL (dBm)
55
VDS = 32 V; VGS = 32 V
(1) f = 1935 MHz
(1) f = 1935 MHz
(2) f = 1960 MHz
(2) f = 1960 MHz
(3) f = 1985 MHz
(3) f = 1985 MHz
Fig 5.
-30
Power gain and drain efficiency as function of
output power; typical values
Fig 6.
Adjacent channel power ratio (5 MHz) and
adjacent channel power ratio (10 MHz) as
function of output power; typical values
aaa-006000
9
PAR
(dB)
8
(3)
(2)
(1)
7
6
5
4
25
30
35
40
45
50
PL (dBm)
55
VDS = 32 V; IDq = 1300 mA.
(1) f = 1935 MHz
(2) f = 1960 MHz
(3) f = 1985 MHz
Fig 7.
Peak-to-average power ratio as a function of output power; typical values
BLF8G19LS-170BV#4
Product data sheet
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Rev. 4 — 1 September 2015
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BLF8G19LS-170BV
Power LDMOS transistor
7.5.3 2-Tone VBW
aaa-006001
10
IMD
(dBc)
-10
(1)
(2)
IMD3
-30
IMD5
(1)
(2)
-50
IMD7
(1)
(2)
-70
1
10
carrier spacing (MHz)
102
VDS = 32 V; IDq = 1300 mA; fc = 1960 MHz.
(1) low frequency component
(2) high frequency component
Fig 8.
BLF8G19LS-170BV#4
Product data sheet
VBW capability in class-AB test circuit
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Rev. 4 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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BLF8G19LS-170BV
Power LDMOS transistor
8. Package outline
Earless flanged LDMOST ceramic package; 6 leads
SOT1120B
D
A
F
3
D1
L
D
c
U1
1
4
5
y
α
H
Z2
U2
Z1
Z
6
E1
E
7
2
b1
b
w2
0
Q
D
5
10 mm
scale
Dimensions
Unit(1)
mm
A
max 4.75
nom
min 3.45
b
b1
1.83
12.83
c
D
D1
E
E1
F
H
L
0.18 20.02 19.96 9.53 9.53 1.14 19.94 3.56
Q(2)
U1
U2
w2
1.70 20.70 9.91
y
Z
Z1
0.10
4.60
9.53 15.52 64°
4.32
8.71 14.50 60°
Z2
α
0.51
1.57
12.57
0.10 19.61 19.66 9.27 9.25 0.89 18.92 3.30
1.45 20.45 9.65
0.004 0.181 0.375 0.611 64°
max 0.187 0.072 0.505 0.007 0.788 0.786 0.375 0.375 0.045 0.785 0.140 0.067 0.815 0.39
0.02
inches nom
0.170 0.343 0.571 60°
min 0.136 0.062 0.495 0.004 0.772 0.774 0.365 0.364 0.035 0.745 0.130 0.057 0.805 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
Outline
version
References
IEC
JEDEC
JEITA
European
projection
Issue date
12-06-14
13-10-21
SOT1120B
Fig 9.
sot1120b_po
Package outline SOT1120B
BLF8G19LS-170BV#4
Product data sheet
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Rev. 4 — 1 September 2015
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BLF8G19LS-170BV
Power LDMOS transistor
9. Abbreviations
Table 10.
Abbreviations
Acronym
Description
3GPP
3rd Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
ESD
ElectroStatic Discharge
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal Oxide Semiconductor Transistor
MTF
Median Time to Failure
PAR
Peak-to-Average Ratio
VBW
Video BandWidth
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
10. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
BLF8G19LS-170BV#4
20150901
Product data sheet
Modifications:
Change notice
Supersedes
BLF8G19LS-170BV v.3
•
The format of this document has been redesigned to comply with the new identity
guidelines of Ampleon.
•
Legal texts have been adapted to the new company name where appropriate.
BLF8G19LS-170BV v.3
20150501
Product data sheet
-
BLF8G19LS-170BV v.2
BLF8G19LS-170BV v.2
20130328
Product data sheet
-
BLF8G19LS-170BV v.1
BLF8G19LS-170BV v.1
20130108
Preliminary data sheet
-
-
BLF8G19LS-170BV#4
Product data sheet
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Rev. 4 — 1 September 2015
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BLF8G19LS-170BV
Power LDMOS transistor
11. Legal information
11.1
Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
11.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
11.3
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF8G19LS-170BV#4
Product data sheet
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
All information provided in this document is subject to legal disclaimers.
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Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12. Contact information
For more information, please visit:
http://www.ampleon.com
BLF8G19LS-170BV#4
Product data sheet
For sales office addresses, please visit:
http://www.ampleon.com/sales
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BLF8G19LS-170BV
Power LDMOS transistor
13. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.5
7.5.1
7.5.2
7.5.3
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information . . . . . . . . . . . . . . . . . . . 4
VBW in class-AB operation . . . . . . . . . . . . . . . 4
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
CW pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7
2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLF8G19LS-170BV#4