BLF8G22LS-220U

BLF8G22LS-220 Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 220 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal 2-carrier W-CDMA [1] f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2110 to 2170 1620 28 55 17 33 30[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.2 Features and benefits        Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency range BLF8G22LS-220 Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package BLF8G22LS-220 Name Description Version - SOT502B earless flanged ceramic package; 2 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C - 225 C [1] junction temperature Tj [1] Conditions Continuous use at maximum temperature will affect the reliability. 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-c) BLF8G22LS-220#4 Product data sheet Conditions thermal resistance from junction to case Tcase = 80 C; PL = 55 W (CW); VDS = 28 V; IDq = 1620 mA All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 Typ Unit 0.26 K/W © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 12 BLF8G22LS-220 Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA Min Typ Max Unit 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.5 1.7 2.3 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 1620 mA 1.7 2.1 2.5 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.2 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 51 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 420 nA gfs forward transconductance VDS = 10 V; ID = 0.27 A - 2.41 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5.25 A - 56.8 - m Table 7. RF characteristics Test signal: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1-64 DPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 1620 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit dB Gp power gain PL(AV) = 55 W 15.8 17 RLin input return loss PL(AV) = 55 W - 12 6 dB D drain efficiency PL(AV) = 55 W 28 33 % ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 55 W - 30 24 - dBc 7. Test information 7.1 Ruggedness in class-AB operation The BLF8G22LS-220 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1620 mA; PL = 200 W (CW); f = 2110 MHz. 7.2 Impedance information Table 8. Typical impedance Measured load-pull condition data; IDq = 1620 mA; VDS = 28 V. f ZS[1] ZL[1] (MHz) () () 2110 1.59  j4.09 1.30  j2.20 2140 2.16  j4.45 1.20  j2.10 2170 2.46  j3.95 1.20  j2.30 [1] BLF8G22LS-220#4 Product data sheet ZS and ZL defined in Figure 1. All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 12 BLF8G22LS-220 Power LDMOS transistor drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.3 Test circuit 50 mm C7 50 mm C2 C4 R1 70 mm C9 C13 C11 C1 C6 R2 C8 C5 C3 C10 C12 aaa-006779 Printed-Circuit Board (PCB): Rogers 4350B; r = 3.66; thickness = 0.765 mm; thickness copper plating = 35 m. See Table 9 for a list of components. Fig 2. Component layout for class-AB production test circuit Table 9. List of components For test circuit see Figure 2. Component Description Product data sheet Remarks multilayer ceramic chip capacitor 9.7 pF [1] C7, C8, C9, C10 multilayer ceramic chip capacitor 10 F [2] Murata C11, C12 multilayer ceramic chip capacitor 1 F [2] Murata C13 electrolytic capacitor 470 F, 63 V R1, R2 resistor 9.1  C1,C2, C3, C4, C5, C6 BLF8G22LS-220#4 Value [1] American Technical Ceramics type 800B or capacitor of same quality. [2] Murata or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 ATC 800B Vishay Dale SMD 0805 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 12 BLF8G22LS-220 Power LDMOS transistor 7.4 Graphical data 7.4.1 One-tone CW aaa-006780 22 Gp (dB) 60 ηD (%) ηD 20 50 18 40 Gp (1) (1) (2) (2) (3) (3) 16 30 14 20 12 10 10 0 50 100 150 200 PL (W) 0 250 VDS = 28 V; IDq = 1620 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 3. Power gain and drain efficiency as function of output power; typical values 7.4.2 CW pulsed aaa-006781 22 Gp (dB) 60 ηD (%) ηD 20 50 18 40 (1) (1) (2) (2) (3) (3) 16 30 Gp 14 20 12 10 10 0 50 100 150 200 250 PL (W) 0 300 VDS = 28 V; IDq = 1620 mA; tp = 100 s;  = 10 %. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 4. BLF8G22LS-220#4 Product data sheet Power gain and drain efficiency as function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 12 BLF8G22LS-220 Power LDMOS transistor 7.4.3 1-Carrier W-CDMA aaa-006782 20 Gp (dB) (1) (1) (2) (2) (3) (3) 16 14 ηD 12 10 8 0 15 50 0 ACPR5M (dBc) -10 40 -20 30 -30 20 -40 10 -50 ηD (%) Gp 18 60 30 45 60 75 90 PL (W) 0 105 -60 VDS = 28 V; IDq = 1620 mA. aaa-006783 (3) (2) (1) 0 20 60 80 PL (W) 100 VDS = 28 V; IDq = 1620 mA. (1) f = 2110 MHz (1) f = 2110 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2170 MHz (3) f = 2170 MHz Fig 5. 40 Power gain and drain efficiency as function of output power; typical values Fig 6. Adjacent channel power ratio (5 MHz) as a function of output power; typical values aaa-006784 8 PAR (dB) 7 6 5 (1) (2) (3) 4 0 20 40 60 80 PL (W) 100 VDS = 28 V; IDq = 1620 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 7. Peak-to-average ratio as a function of output power; typical values BLF8G22LS-220#4 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 12 BLF8G22LS-220 Power LDMOS transistor 7.4.4 2-Carrier W-CDMA aaa-006785 22 50 Gp (dB) Gp (dB) 20 40 aaa-006786 0 ACPR5M (dBc) -10 -20 Gp 18 30 -30 (1) (1) (2) (2) (3) (3) 16 0 10 10 20 30 40 (3) (2) (1) -40 ηD 14 12 20 50 60 PL (W) 70 -50 0 -60 VDS = 28 V; IDq = 1620 mA. 0 10 20 (1) f = 2110 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2170 MHz (3) f = 2170 MHz Power gain and drain efficiency as function of output power; typical values BLF8G22LS-220#4 Product data sheet 40 50 60 PL (W) 70 VDS = 28 V; IDq = 1620 mA. (1) f = 2110 MHz Fig 8. 30 Fig 9. Adjacent channel power ratio (5 MHz) as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 12 BLF8G22LS-220 Power LDMOS transistor 8. Package outline Earless flanged ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION D E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 07-05-09 12-05-02 SOT502B Fig 10. Package outline SOT502B BLF8G22LS-220#4 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 12 BLF8G22LS-220 Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel LDMOS Laterally Diffused Metal Oxide Semiconductor PAR Peak-to-Average Ratio SMD Surface Mounted Device VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 11. Revision history Document ID Release date Data sheet status BLF8G22LS-220#.4 20150901 Product data sheet Modifications: Change notice Supersedes BLF8G22LS-220 v.3 • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF8G22LS-220 v.3 20130530 Product data sheet - BLF8G22LS-220 v.2 BLF8G22LS-220 v.2 20130415 Product data sheet - BLF8G22LS-220 v.1 BLF8G22LS-220 v.1 20121220 Objective data sheet - - BLF8G22LS-220#4 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 12 BLF8G22LS-220 Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. 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Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLF8G22LS-220#4 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 12 BLF8G22LS-220 Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com BLF8G22LS-220#4 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 12 BLF8G22LS-220 Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.4.1 7.4.2 7.4.3 7.4.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 3 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 5 CW pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Handling information. . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF8G22LS-220#4