BLF7G24LS-160P,118

BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 6 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal IS-95 [1] f IDq VDS PL(AV) Gp D ACPR885k (MHz) (mA) (V) (W) (dB) (%) (dBc) 2300 to 2400 1200 28 30 18.5 27.5 45.5[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. 1.2 Features and benefits          Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2300 MHz to 2400 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to 2400 MHz frequency range BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G24L-160P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 4 5 4 [1] source 2 sym117 BLF7G24LS-160P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 5 4 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF7G24L-160P - flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A BLF7G24LS-160P - earless flanged balanced ceramic package; 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLF7G24L-160P_7G24LS-160P#6 Product data sheet Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C Tj junction temperature - 200 C All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 14 BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 30 W; VDS = 28 V; IDq = 1200 mA 0.2 K/W 6. Characteristics Table 6. Characteristics Tj = 25 C per section, unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1 mA Min Typ Max Unit 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 102 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 19 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 3.57 A - 6.9 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 3.57 A - 0.15 0.23  7. Test information Remark: All testing performed in a class-AB production test circuit. Table 7. Functional test information Test signal: single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth is 1.2288 MHz; f1 = 2300 MHz; f2 = 2400 MHz; RF performance at VDS = 28 V; IDq = 1200 mA; Tcase = 25 C; unless otherwise specified. Symbol Parameter Conditions Min Gp power gain PL(AV) = 30 W 17.8 18.5 RLin input return loss PL(AV) = 30 W - 13.5 9 dB D drain efficiency PL(AV) = 30 W 25 27.5 % PL(AV) = 30 W - 45.5 41.5 dBc ACPR885k adjacent channel power ratio (885 kHz) Typ Max Unit - dB - 7.1 Ruggedness in class-AB operation The BLF7G24L-160P and BLF7G24LS-160P are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1200 mA; PL = 160 W; f = 2300 MHz. BLF7G24L-160P_7G24LS-160P#6 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 14 BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance Measured load-pull data. Typical values per section. IDq = 600 mA; main transistor VDS = 28 V. ZS and ZL defined in Figure 1. f (MHz) ZS () ZL () 2300 2.5  j5.9 3.1  j4.3 2400 4.6  j7.2 2.9  j4.2 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.3 Graphs 7.3.1 Pulsed CW aaa-002659 20 60 Gp (dB) ηD (%) 19 (3) (1) (2) (5) (4) (6) 18 ηD (%) 50 19 40 18 30 17 16 20 16 15 10 15 0 14 42 44 46 48 50 52 PL (dBm) 54 50 40 (3) (1) (2) (5) (4) (6) 0 VDS = 28 V; IDq = 1200 mA;  = 10 %; tp = 0.10 ms. 40 80 (2) Gp at f = 2350 MHz (2) Gp at f = 2350 MHz (3) Gp at f = 2400 MHz (3) Gp at f = 2400 MHz (4) D at f = 2300 MHz (4) D at f = 2300 MHz (5) D at f = 2350 MHz (5) D at f = 2350 MHz (6) D at f = 2400 MHz (6) D at f = 2400 MHz BLF7G24L-160P_7G24LS-160P#6 Product data sheet 20 120 160 PL (W) 0 200 VDS = 28 V; IDq = 1200 mA;  = 10 %; tp = 0.10 ms. (1) Gp at f = 2300 MHz Power gain and drain efficiency of pulsed CW as function of output power; typical values 30 10 (1) Gp at f = 2300 MHz Fig 2. 60 Gp (dB) 17 14 aaa-002660 20 Fig 3. Power gain and drain efficiency of pulsed CW as function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 14 BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor aaa-002661 -8 RLin (dB) (1) (2) (3) -12 -16 -20 -24 42 44 46 48 50 52 PL (dBm) 54 VDS = 28 V; IDq = 1200 mA;  = 10 %; tp = 0.10 ms. (1) f = 2300 MHz (2) f = 2350 MHz (3) f = 2400 MHz Fig 4. Input return loss of pulsed CW as a function of output power; typical values 7.3.2 IS-95 aaa-002662 22 (3) (1) (2) (5) (4) (6) Gp (dB) 20 60 aaa-002663 22 ηD (%) ηD (%) 50 20 50 18 40 18 40 16 30 16 14 20 14 12 10 12 0 10 10 42 44 46 48 50 PL (dBm) 52 (3) (1) (2) (4) (5) (6) 0 VDS = 28 V; IDq = 1200 mA. 20 40 (2) Gp at f = 2350 MHz (2) Gp at f = 2350 MHz (3) Gp at f = 2400 MHz (3) Gp at f = 2400 MHz (4) D at f = 2300 MHz (4) D at f = 2300 MHz (5) D at f = 2350 MHz (5) D at f = 2350 MHz (6) D at f = 2400 MHz (6) D at f = 2400 MHz Power gain and drain efficiency of IS-95 as function of output power; typical values Product data sheet 20 60 80 100 PL (W) 0 120 VDS = 28 V; IDq = 1200 mA. (1) Gp at f = 2300 MHz BLF7G24L-160P_7G24LS-160P#6 30 10 (1) Gp at f = 2300 MHz Fig 5. 60 Gp (dB) Fig 6. Power gain and drain efficiency of IS-95 as function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 14 BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor aaa-002664 0 aaa-002894 -30 ACPR885k (dBc) -35 RLin (dB) -5 -40 -10 (2) (1) (3) (3) (2) (1) -45 -15 -50 -20 -55 -25 -60 42 44 46 48 50 PL (dBm) 52 42 VDS = 28 V; IDq = 1200 mA. 44 46 50 PL (dBm) 52 VDS = 28 V; IDq = 1200 mA. (1) f = 2300 MHz (1) f = 2300 MHz (2) f = 2350 MHz (2) f = 2350 MHz (3) f = 2400 MHz (3) f = 2400 MHz Fig 7. 48 Input return loss of IS-95 as a function of output power; typical values Fig 8. Adjacent channel power ratio (885 kHz) of IS-95 as a function of output power; typical values aaa-002665 -45 ACPR1980k (dBc) -50 (1) (2) (3) -55 -60 -65 -70 42 44 46 48 50 PL (dBm) 52 VDS = 28 V; IDq = 1200 mA. (1) f = 2300 MHz (2) f = 2350 MHz (3) f = 2400 MHz Fig 9. BLF7G24L-160P_7G24LS-160P#6 Product data sheet Adjacent channel power ratio (1980 kHz) of IS-95 as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 14 BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor 7.3.3 CW aaa-002666 20 60 Gp (dB) 18 aaa-002667 20 ηD (%) 60 Gp (dB) ηD (%) 50 18 40 16 14 30 14 30 12 20 12 20 10 10 (3) (1) (2) (5) (4) (6) 16 10 38 40 42 44 46 48 50 52 PL (dBm) 54 0 VDS = 28 V; IDq = 1200 mA. 50 (1) (3) (2) (5) (4) (6) 40 40 80 120 160 PL (W) 10 200 VDS = 28 V; IDq = 1200 mA. (1) Gp at f = 2300 MHz (1) Gp at f = 2300 MHz (2) Gp at f = 2350 MHz (2) Gp at f = 2350 MHz (3) Gp at f = 2400 MHz (3) Gp at f = 2400 MHz (4) D at f = 2300 MHz (4) D at f = 2300 MHz (5) D at f = 2350 MHz (5) D at f = 2350 MHz (6) D at f = 2400 MHz (6) D at f = 2400 MHz Fig 10. Power gain and drain efficiency of CW as function of output power; typical values Fig 11. Power gain and drain efficiency of CW as function of output power; typical values aaa-002668 0 RLin (dB) (1) (2) (3) -10 -20 -30 -40 38 40 42 44 46 48 50 52 PL (dBm) 54 VDS = 28 V; IDq = 1200 mA. (1) f = 2300 MHz (2) f = 2350 MHz (3) f = 2400 MHz Fig 12. Input return loss of CW as a function of output power; typical values BLF7G24L-160P_7G24LS-160P#6 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 14 BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor 7.4 Test circuit C4 R1 C2 C7 C9 C11 C13 OUTPUT INPUT C1 C6 REV01 BLF7G24LS-160P C5 R2 C3 C8 C10 C12 BLF7G24LS-160P aaa-002646 See Table 9 for a list of components. Fig 13. Component layout for test circuit Table 9. List of components For test circuit, see Figure 13. BLF7G24L-160P_7G24LS-160P#6 Product data sheet Component Description Value C1, C6 multilayer ceramic chip capacitor 7.5 pF [1] C2, C3, C7, C8 multilayer ceramic chip capacitor 16 pF [2] C4, C5, C9, C10 multilayer ceramic chip capacitor 20 nF [1] C11, C12 multilayer ceramic chip capacitor 10 F [3] C13 electrolytic capacitor 220 F; 63 V R1, R2 chip resistor 2 ; SMD 805 [1] American technical ceramics type 100B or capacitor of same quality. [2] American technical ceramics type 100A or capacitor of same quality. [3] TDK or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 Remarks © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 14 BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor 8. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q U1 3.30 3.05 2.26 2.01 35.56 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 10-02-02 12-05-02 SOT539A Fig 14. Package outline SOT539A BLF7G24L-160P_7G24LS-160P#6 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 14 BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 inches nom 0.01 0.54 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 mm max nom min A b 4.7 11.81 c D D1 0.18 31.55 31.52 E E1 9.5 9.53 e F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.39 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 4.2 11.56 0.10 30.94 30.96 9.3 9.27 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot539b_po European projection Issue date 12-05-02 13-05-24 SOT539B Fig 15. Package outline SOT539B BLF7G24L-160P_7G24LS-160P#6 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 14 BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor 9. Abbreviations Table 10. Abbreviations Acronym Description CCDF Complementary Cumulative Distribution Function IS-95 Interim Standard 95 ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor PAR Peak-to-Average Ratio RF Radio Frequency VSWR Voltage Standing Wave Ratio 10. Revision history Table 11. Revision history Document ID Release date Data sheet status Change Supersedes notice BLF7G24L-160P_7G24LS-160P#6 20150901 Product data sheet - Modifications: BLF7G24L-160P_7G24LS-160P v.5 • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF7G24L-160P_7G24LS-160P v.5 20130712 Product data sheet - BLF7G24L-160P_7G24LS-160P v.4 BLF7G24L-160P_7G24LS-160P v.4 20120725 Product data sheet - BLF7G24L-160P_7G24LS-160P v.3 BLF7G24L-160P_7G24LS-160P v.3 20120420 Preliminary data sheet - BLF7G24L-160P_7G24LS-160P v.2 BLF7G24L-160P_7G24LS-160P v.2 20120301 Objective data sheet - BLF7G24L-160P_7G24LS-160P v.1 BLF7G24L-160P_7G24LS-160P v.1 20120210 Objective data sheet - - BLF7G24L-160P_7G24LS-160P#6 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 14 BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 11.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLF7G24L-160P_7G24LS-160P#6 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 14 BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12. Contact information For more information, please visit: http://www.ampleon.com BLF7G24L-160P_7G24LS-160P#6 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 14 BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.3.1 7.3.2 7.3.3 7.4 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 IS-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF7G24L-160P_7G24LS-160P#6