BLF8G10LS-270GV,12

BLF8G10LS-270V; BLF8G10LS-270GV Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 790 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal 2-carrier W-CDMA [1] f VDS PL(AV) Gp D ACPR5M (MHz) (V) (W) (dB) (%) (dBc) 869 to 894 28 67 19.5 31 37[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 10 MHz. 1.2 Features and benefits            Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (790 MHz to 960 MHz) Lower output capacitance for improved performance in Doherty applications Decoupling leads to enable improved video bandwidth (55 MHz typical) Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Design optimized for gull-wing and straight lead versions Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for W-CDMA base stations and multi carrier applications in the 790 MHz to 960 MHz frequency range BLF8G10LS-270(G)V Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF8G10LS-270V (SOT1244B) 1 drain 2 gate 4 1 1 5 [1] 3 source 4 decoupling lead 5 decoupling lead 6 n.c. 7 n.c. 4,5 6,7 2 3 3 aaa-003619 6 2 7 BLF8G10LS-270GV (SOT1244C) 1 drain 2 gate 3 source 4 decoupling lead 5 decoupling lead 6 n.c. 7 n.c. [1] 4 1 5 1 4,5 6,7 [1] 2 3 aaa-003619 6 7 2 3 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF8G10LS-270V - earless flanged ceramic package; 6 leads SOT1244B BLF8G10LS-270GV - earless flanged ceramic package; 6 leads SOT1244C 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLF8G10LS-270V_8G10LS-270GV#2 Product data sheet Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C Tj junction temperature - 225 C All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 17 BLF8G10LS-270(G)V Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 67 W 0.257 K/W 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 65 - - V VDS = 10 V; ID = 450 mA 1.5 1.8 2.3 V V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 4.5 mA VGS(th) gate-source threshold voltage IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.2 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 82 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 420 nA gfs forward transconductance VDS = 10 V; ID = 450 mA - 3.92 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 15.75 A - 0.04 -  Table 7. RF characteristics Test signal: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1-64 DPCH; f1 = 871.5 MHz; f2 = 881.5 MHz; f3 = 881.5 MHz; f4 = 891.5 MHz; f5 = 881.5 MHz; f6 = 891.5 MHz; RF performance at VDS = 28 V; IDq = 2000 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit, tested on straight lead device. Symbol Parameter Conditions Min Typ Gp power gain PL(AV) = 67 W 17.3 19.5 - Max dB Unit RLin input return loss PL(AV) = 67 W - 16 12 dB D drain efficiency PL(AV) = 67 W 26 31 - % ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 67 W - 37 33 dBc 7. Test information 7.1 Ruggedness in class-AB operation The BLF8G10LS-270V and BLF8G10LS-270GV are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 2000 mA; PL = 270 W; f = 820 MHz; f = 869 MHz; f = 920 MHz; f = 960 MHz and a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 2000 mA; PL = 270 W; f = 790 MHz. BLF8G10LS-270V_8G10LS-270GV#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 17 BLF8G10LS-270(G)V Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance IDq = 2700 mA; main transistor VDS = 28 V. f ZS[1] ZL[1] (MHz) () () 790 1.4  j1.84 1.22  j2.07 820 1.58  j1.96 1.29  j1.95 869 1.84  j2.70 1.12  j1.83 881 1.78  j2.94 1.12  j1.84 894 1.90  j3.08 1.12  j1.84 920 2.06  j2.50 1.04  j1.13 940 2.10  j2.90 1.04  j1.13 960 2.56  j2.65 1.00  j1.22 [1] ZS and ZL defined in Figure 1. drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.3 VBW in class-AB operation The BLF8G10LS-270V and BLF8G10LS-270GV show 55 MHz (typical) video bandwidth in class-AB test circuit in 800 MHz band at VDS = 28 V and IDq = 2 A. BLF8G10LS-270V_8G10LS-270GV#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 17 BLF8G10LS-270(G)V Power LDMOS transistor 7.4 Test circuit 70 mm C9 C7 70 mm C8 C16 C2 R1 C10 C17 C15 C23 C5 C25 C18 C27 C1 C4 60 mm C26 R2 C14 C11 C13 C28 C6 C3 C12 C20 C24 C22 C19 C21 aaa-005752 Printed-Circuit Board (PCB): Rogers 4350B; r = 3.66; thickness = 0.765 mm; thickness copper plating = 35 m. See Table 9 for a list of components. Fig 2. Component layout for class-AB production test circuit Table 9. List of components For test circuit see Figure 2. Component Description Value C1, C4 multilayer ceramic chip capacitor 47 pF [1] ATC100B multilayer ceramic chip capacitor 45 pF [1] ATC100B multilayer ceramic chip capacitor 0.01 F [2] Murata C8, C12, C16, C20 multilayer ceramic chip capacitor 0.1 F [2] Murata C9, C13, C17, C21 multilayer ceramic chip capacitor 1 F [2] Murata C10, C14, C18, C22 multilayer ceramic chip capacitor 4.7 F [2] Murata C23, C24 electrolytic capacitor 470 F, 63 V C25, C26, C27, C28 multilayer ceramic chip capacitor 10 F [2] Murata R1, R2 chip resistor 9.1  [3] Vishay Dale 0805 C2, C3, C5, C6 C7, C11, C15, C19 BLF8G10LS-270V_8G10LS-270GV#2 Product data sheet [1] American Technical Ceramics type 100B or capacitor of same quality. [2] Murata or capacitor of same quality. [3] Vishay Dale resistor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 Remarks © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 17 BLF8G10LS-270(G)V Power LDMOS transistor 7.5 Graphical data 7.5.1 Straight lead sample CW aaa-005753 24 80 Gp (dB) ηD (%) 20 60 Gp (1) (2) (3) 16 40 12 20 ηD 8 0 35 40 45 50 55 PL (dBm) 60 VDS = 28 V; IDq = 2000 mA (1) f = 869 MHz (2) f = 881.5 MHz (3) f = 894 MHz Fig 3. Power gain and drain efficiency as function of load power; typical values 7.5.2 Straight lead sample CW pulsed aaa-005754 24 80 Gp (dB) ηD (%) 20 60 Gp (1) (2) (3) 16 40 12 20 ηD 8 0 35 40 45 50 55 PL (dBm) 60 VDS = 28 V; IDq = 2000 mA (1) f = 869 MHz (2) f = 881.5 MHz (3) f = 894 MHz Fig 4. BLF8G10LS-270V_8G10LS-270GV#2 Product data sheet Power gain and drain efficiency as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 17 BLF8G10LS-270(G)V Power LDMOS transistor 7.5.3 Straight lead sample 1-carrier W-CDMA aaa-005755 22 50 -25 ACPR5M (dBc) -30 40 -35 16 30 -40 14 20 -45 10 -50 0 -55 Gp (dB) ηD (%) Gp 20 60 (1) (2) (3) 18 aaa-005756 (1) (2) (3) ηD 12 10 35 39 43 47 51 PL (dBm) 55 38 VDS = 28 V; IDq = 2000 mA 40 42 46 48 50 52 PL (dBm) 54 VDS = 28 V; IDq = 2000 mA (1) f = 869 MHz (1) f = 869 MHz (2) f = 881.5 MHz (2) f = 881.5 MHz (3) f = 894 MHz (3) f = 894 MHz Fig 5. 44 Power gain and drain efficiency as function of load power; typical values Fig 6. Adjacent channel power ratio (5 MHz) as a function of load power; typical values aaa-005757 8 PAR (dB) 7 (1) 6 (2) (3) 5 4 38 40 42 44 46 48 50 52 PL (dBm) 54 VDS = 28 V; IDq = 2000 mA (1) f = 869 MHz (2) f = 881.5 MHz (3) f = 894 MHz Fig 7. BLF8G10LS-270V_8G10LS-270GV#2 Product data sheet Peak-to-average ratio as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 17 BLF8G10LS-270(G)V Power LDMOS transistor 7.5.4 Straight lead sample 2-carrier W-CDMA aaa-005758 22 40 Gp (dB) 18 aaa-005759 -34 ACPR5M (dBc) ηD (%) 30 -38 20 -42 (1) (2) (3) 14 (1) (2) (3) 10 6 35 37 39 41 43 45 47 49 PL (dBm) 10 -46 0 -50 51 38 VDS = 28 V; IDq = 2000 mA 40 42 46 48 PL (dBm) 50 VDS = 28 V; IDq = 2000 mA (1) f = 869 MHz (1) f = 869 MHz (2) f = 881.5 MHz (2) f = 881.5 MHz (3) f = 894 MHz (3) f = 894 MHz Fig 8. 44 Power gain and drain efficiency as function of load power; typical values Fig 9. Adjacent channel power ratio (5 MHz) as a function of load power; typical values 7.5.5 Gull-wing sample CW aaa-005760 24 80 Gp (dB) ηD (%) Gp 20 60 (1) (2) (3) 16 12 40 20 ηD 8 0 35 40 45 50 55 PL (dBm) 60 VDS = 28 V; IDq = 2000 mA (1) f = 869 MHz (2) f = 881.5 MHz (3) f = 894 MHz Fig 10. Power gain and drain efficiency as function of load power; typical values BLF8G10LS-270V_8G10LS-270GV#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 17 BLF8G10LS-270(G)V Power LDMOS transistor 7.5.6 Gull-wing sample CW pulsed aaa-005761 24 80 Gp (dB) ηD (%) Gp 20 60 (1) (2) (3) 16 12 40 20 ηD 8 0 35 40 45 50 55 PL (dBm) 60 VDS = 28 V; IDq = 2000 mA (1) f = 869 MHz (2) f = 881.5 MHz (3) f = 894 MHz Fig 11. Power gain and drain efficiency as function of load power; typical values 7.5.7 Gull-wing sample 1-carrier W-CDMA aaa-005762 22 60 50 -25 ACPR5M (dBc) -30 40 -35 16 30 -40 14 20 -45 10 -50 0 -55 Gp (dB) ηD (%) 20 aaa-005763 Gp (1) (2) (3) 18 12 ηD 10 35 39 43 47 51 PL (dBm) 55 VDS = 28 V; IDq = 2000 mA (1) (2) (3) 38 40 42 (1) f = 869 MHz (2) f = 881.5 MHz (2) f = 881.5 MHz (3) f = 894 MHz 48 50 52 PL (dBm) 54 (3) f = 894 MHz Fig 12. Power gain and drain efficiency as function of load power; typical values Product data sheet 46 VDS = 28 V; IDq = 2000 mA (1) f = 869 MHz BLF8G10LS-270V_8G10LS-270GV#2 44 Fig 13. Adjacent channel power ratio (5 MHz) as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 17 BLF8G10LS-270(G)V Power LDMOS transistor aaa-005764 8 PAR (dB) 7 6 (1) (2) (3) 5 4 38 40 42 44 46 48 50 52 PL (dBm) 54 VDS = 28 V; IDq = 2000 mA (1) f = 869 MHz (2) f = 881.5 MHz (3) f = 894 MHz Fig 14. Peak-to-average ratio as a function of load power; typical values 7.5.8 Gull-wing sample 2-carrier W-CDMA aaa-005765 22 Gp (dB) 40 ηD (%) Gp 18 (1) (2) (3) 14 aaa-005766 -34 ACPR5M (dBc) 30 -38 20 -42 (1) (2) (3) ηD 10 6 35 37 39 41 43 45 47 49 PL (dBm) 10 -46 0 -50 51 VDS = 28 V; IDq = 2000 mA 38 40 (1) f = 869 MHz (2) f = 881.5 MHz (2) f = 881.5 MHz (3) f = 894 MHz 46 48 PL (dBm) 50 (3) f = 894 MHz Fig 15. Power gain and drain efficiency as function of load power; typical values Product data sheet 44 VDS = 28 V; IDq = 2000 mA (1) f = 869 MHz BLF8G10LS-270V_8G10LS-270GV#2 42 Fig 16. Adjacent channel power ratio (5 MHz) as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 17 BLF8G10LS-270(G)V Power LDMOS transistor 7.5.9 2-Tone VBW aaa-005767 -10 IMD (dBc) -20 (1) (2) IMD3 -30 IMD5 -40 (1) (2) IMD7 -50 (1) (2) -60 -70 1 10 carrier spacing (MHz) 102 VDS = 28 V; IDq = 2000 mA; f = 881.5 MHz. (1) IMD low (2) IMD high Fig 17. VBW capability in class-AB test circuit BLF8G10LS-270V_8G10LS-270GV#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 17 BLF8G10LS-270(G)V Power LDMOS transistor 8. Package outline Earless flanged ceramic package; 6 leads SOT1244B D A F 3 D1 C U1 B e c v 4 1 A 5 y U2 H E1 E A 6 2 7 Q b1 b w2 B 0 scale Dimensions Unit(1) b b1 c max 4.75 nom min 3.45 1.41 12.83 0.18 1.14 12.57 0.10 max 0.187 inches nom min 0.136 0.055 0.505 0.007 0.788 0.786 mm 10 mm 5 A D D1 20.02 19.96 Q(2) U1 E E1 F 9.53 9.53 1.14 19.94 1.70 20.70 9.91 9.27 9.27 0.89 18.92 1.45 20.45 9.65 e H U2 v w2 y 0.25 0.25 0.25 18.03 19.61 19.66 0.375 0.375 0.045 0.785 0.067 0.815 0.39 0.01 0.01 0.01 0.710 0.045 0.495 0.004 0.772 0.774 0.365 0.365 0.035 0.745 0.057 0.805 0.38 Note 1. Millimeter dimensions are derived from the original inch dimensions. 2. Dimension is measured 0.030 inch (0.76 mm) from body. Outline version References IEC JEDEC JEITA sot1244b_po European projection Issue date 12-04-18 12-05-07 SOT1244B Fig 18. Package outline SOT1244B BLF8G10LS-270V_8G10LS-270GV#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 17 BLF8G10LS-270(G)V Power LDMOS transistor Earless flanged ceramic package; 6 leads SOT1244C 0.3 mm gauge plane D Lp F A 3 D1 y Q detail X v A U1 4 H c B 1 X 5 E1 U2 6 A 2 7 b1 b E w2 B θ e 5 0 10 mm scale Dimensions Unit(1) b b1 c max 4.75 nom min 3.45 1.41 12.83 0.18 20.02 19.96 1.14 12.57 0.10 19.61 19.66 max 0.187 inches nom min 0.136 0.055 0.505 0.007 0.788 0.786 0.045 0.495 0.004 0.772 0.774 mm A D D1 e E E1 F H 9.53 9.53 1.14 14.3 1.38 0.195 20.70 9.91 9.27 9.27 0.89 14.1 0.98 0.055 20.45 9.65 Lp Q U1 U2 v w2 y θ 0.25 0.25 0.15 7° 0.01 0.01 0.006 0° 7° 18.03 0.375 0.375 0.045 0.563 0.055 0.008 0.815 0.39 0.710 Outline version References IEC JEDEC 0° 0.365 0.365 0.035 0.555 0.039 0.002 0.805 0.38 Note 1. Millimeter dimensions are derived from the original inch dimensions. JEITA sot1244c_po European projection Issue date 12-05-10 12-05-30 SOT1244C Fig 19. Package outline SOT1244C BLF8G10LS-270V_8G10LS-270GV#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 17 BLF8G10LS-270(G)V Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical Channel ESD ElectroStatic Discharge IMD InterModulation Distortion LDMOS Laterally Diffused Metal Oxide Semiconductor PAR Peak-to-Average Ratio VBW Video BandWidth VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF8G10LS-270V_8G10LS-270GV#2 20150901 - BLF8G10LS-270V_8G 10LS-270GV v.1 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF8G10LS-270V_8G10LS-270GV v.1 20121203 BLF8G10LS-270V_8G10LS-270GV#2 Product data sheet Product data sheet Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 - © Ampleon The Netherlands B.V. 2015. All rights reserved. 14 of 17 BLF8G10LS-270(G)V Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. 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Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLF8G10LS-270V_8G10LS-270GV#2 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 15 of 17 BLF8G10LS-270(G)V Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com BLF8G10LS-270V_8G10LS-270GV#2 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 16 of 17 BLF8G10LS-270(G)V Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.5.1 7.5.2 7.5.3 7.5.4 7.5.5 7.5.6 7.5.7 7.5.8 7.5.9 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 VBW in class-AB operation . . . . . . . . . . . . . . . 4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6 Straight lead sample CW . . . . . . . . . . . . . . . . . 6 Straight lead sample CW pulsed . . . . . . . . . . . 6 Straight lead sample 1-carrier W-CDMA. . . . . . 7 Straight lead sample 2-carrier W-CDMA. . . . . . 8 Gull-wing sample CW . . . . . . . . . . . . . . . . . . . . 8 Gull-wing sample CW pulsed . . . . . . . . . . . . . . 9 Gull-wing sample 1-carrier W-CDMA . . . . . . . . 9 Gull-wing sample 2-carrier W-CDMA . . . . . . . 10 2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Handling information. . . . . . . . . . . . . . . . . . . . 14 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF8G10LS-270V_8G10LS-270GV#2