BLF7G20LS-250P,118

BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 1805 to 1880 1900 28 70 18 35 29.5[1] Test signal: 3GPP; test model 1;64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF. 1.2 Features and benefits          Excellent ruggedness High-efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1805 MHz to 1880 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applications  RF power amplifiers for W-CDMA base stations and multicarrier applications in the 1805 MHz to 1880 MHz frequency range BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G20L-250P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 4 5 4 [1] source 2 sym117 BLF7G20LS-250P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 5 4 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF7G20L-250P - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A BLF7G20LS-250P - earless flanged balanced LDMOST ceramic package; 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 65 V VGS gate-source voltage 0.5 +13 V ID drain current - 65 A Tstg storage temperature 65 +150 C Tj junction temperature - 200 C BLF7G20L-250P_7G20LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 15 BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 70 W; VDS = 28 V; IDq = 1900 mA; Tj  150 C 0.20 K/W 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.5 mA Min Typ Max Unit 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 150 mA 1.5 1.78 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 33.4 37.54 A IGSS gate leakage current VGS = 11 V; VDS = 0 V - 68.3 - gfs forward transconductance VDS = 10 V; ID = 7.5 A - 12.37 - RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5.25 A - 0.078 0.135  nA S 7. Test information Table 7. 2-carrier W-CDMA functional test information Class-AB production test circuit; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 64 DPCH; f = 1805 MHz to 1880 MHz; RF performance at VDS = 28 V; IDq = 1900 mA; Tcase = 25 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PL(AV) average output power - 70 - W Gp power gain PL(AV) = 70 W 16 18 - dB RLin input return loss PL(AV) = 70 W - 12 - dB D drain efficiency PL(AV) = 70 W 30 35 - % ACPR adjacent channel power ratio PL(AV) = 70 W - 29.5 24.5 dBc 7.1 Ruggedness in class-AB operation The BLF7G20L-250P and BLF7G20LS-250P are capable of withstanding a load mismatch corresponding to a VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1900 mA; PL(1dB) = 245 W (CW); f = 1805 MHz to 1880 MHz. BLF7G20L-250P_7G20LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 15 BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance Measured load-pull data half device; IDq = 950 mA; VDS = 28 V. f ZS[1] ZL[1] (MHz) () () 1750 1.31  j3.53 2.47  j3.91 1805 1.39  j3.75 2.27  j3.63 1845 1.48  j4.10 2.32  j3.19 1880 1.55  j4.19 1.89  j3.15 1930 1.97  j4.48 1.70  j2.95 [1] ZS and ZL defined in Figure 1. drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance BLF7G20L-250P_7G20LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 15 BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor 7.3 Single carrier W-CDMA 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz; channel spacing = 5 MHz; VDS = 28 V; IDq = 1900 mA 001aal942 8 (1) (2) (3) PAR (dB) 001aal943 0 ACPR5M (dBc) 6 -20 (1) (2) (3) 4 -40 2 0 -60 50 150 250 350 0 40 80 PL(M) (W) (1) f = 1805 MHz. (1) f = 1805 MHz. (2) f = 1845 MHz. (2) f = 1845 MHz. (3) f = 1880 MHz. (3) f = 1880 MHz. Fig 2. Peak-to-average power ratio as a function of peak output power; typical values Fig 3. 001aal950 60 120 PL(AV) (W) Adjacent channel power ratio (5 MHz) as a function of average output power; typical values 001aal951 20 50 ηD (%) Gp (dB) ηD (%) 19 (1) (2) (3) 40 40 Gp 18 30 ηD 17 20 16 10 20 15 0 0 100 200 300 0 PL(AV) (W) 40 0 120 80 PL(AV) (W) (1) f = 1805 MHz. (2) f = 1845 MHz. (3) f = 1880 MHz. Fig 4. Efficiency as a function of average output power; typical values Fig 5. Power gain and drain efficiency as a function of average output power; typical values BLF7G20L-250P_7G20LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 15 BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor 7.4 One tone CW VDS = 28 V; IDq = 1900 mA. 001aal949 19 001aal947 50 ηD (%) Gp (dB) (1) (2) (3) 40 18 17 30 (1) (2) (3) 16 20 15 10 14 0 0 100 200 300 0 20 40 PL(AV) (W) (1) f = 1805 MHz. (1) f = 1805 MHz. (2) f = 1845 MHz. (2) f = 1845 MHz. (3) f = 1880 MHz. (3) f = 1880 MHz. Fig 6. Power gain as a function of average output power; typical values Fig 7. 60 80 100 120 140 PL(AV) (W) Efficiency as a function of average output power; typical values BLF7G20L-250P_7G20LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 15 BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor 7.5 2-carrier WCDMA characteristics VDS = 28 V; IDq = 1900 mA; channel spacing = 5 MHz; PAR = 8.4 dB at 0.01 % probability on the CCDF. 001aal946 18.5 Gp (dB) ηD (%) (1) (2) (3) 18.0 001aal947 50 (1) (2) (3) 40 17.5 30 17.0 20 16.5 10 16.0 0 0 20 40 60 80 100 120 140 PL(AV) (W) 0 20 40 (1) f = 1805 MHz. (1) f = 1805 MHz. (2) f = 1845 MHz. (2) f = 1845 MHz. (3) f = 1880 MHz. Fig 8. 80 100 120 140 PL(AV) (W) (3) f = 1880 MHz. Power gain as a function of average output power; typical values 001aam087 18.5 50 Gp Gp (dB) 60 ηD (%) 18.0 40 Fig 9. Efficiency as a function of average output power; typical values 001aal948 0 ACPR5M (dBc) -20 ηD 17.5 30 17.0 20 (1) (2) (3) -40 16.5 10 16.0 10 50 0 130 90 -60 0 20 40 PL(AV) (W) 60 80 100 120 140 PL(AV) (W) (1) f = 1805 MHz. (2) f = 1845 MHz. (3) f = 1880 MHz. Fig 10. Average power gain and drain efficiency as a function of average output power; typical values Fig 11. Adjacent channel power ratio (5 MHz) as a function of average output power; typical values BLF7G20L-250P_7G20LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 15 BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor 7.6 Test circuit Table 9. List of components For test circuit see Figure 12. Component Description Base plate Value Code number Type Remarks [1] C3, C4, C9, C10 multi layer ceramic chip capacitor 47 pF ATC 800B mount on edge C5 multi layer ceramic chip capacitor 1.2 pF ATC 800B mount on edge C6, C7 chip capacitor 560 pF ATC 100A C8 multi layer ceramic chip capacitor 68 pF ATC 800B C11, C12 multi layer ceramic chip capacitor 10 F TDK C13 electrolytic capacitor 470 F; 63 V mount on edge C15, C16 multi layer ceramic chip capacitor 100 nF Phillips 1206 R2, R3 chip resistor 10  Philips 0603 [1] See mechanical drawing (Figure 12). C16 C6 C3 C9 C12 R2 C13 BLF7G20L-250P Output Rev 03 C5 C8 C4 C15 R3 C7 C10 C11 BLF7G20L-250P Input Rev 03 001aam088 Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; thickness = 0.76 mm; thickness copper plating = 35 m See Table 9 for a list of components. Fig 12. Component layout for class-AB production test circuit BLF7G20L-250P_7G20LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 15 BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor 8. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q U1 3.30 3.05 2.26 2.01 35.56 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 10-02-02 12-05-02 SOT539A Fig 13. Package outline SOT539A BLF7G20L-250P_7G20LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 15 BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 inches nom 0.01 0.54 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 mm max nom min A b 4.7 11.81 c D D1 0.18 31.55 31.52 E E1 9.5 9.53 e F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.39 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 4.2 11.56 0.10 30.94 30.96 9.3 9.27 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot539b_po European projection Issue date 12-05-02 13-05-24 SOT539B Fig 14. Package outline SOT539B BLF7G20L-250P_7G20LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 15 BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access BLF7G20L-250P_7G20LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 15 BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF7G20L-250P_7G20LS-250P#5 20150901 Product data sheet - BLF7G20L-250P_7G20LS-250P v.4 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF7G20L-250P_7G20LS-250P v.4 20130712 Product data sheet - BLF7G20L-250P_7G20LS-250P v.3 BLF7G20L-250P_7G20LS-250P v.3 20110103 Product data sheet - BLF7G20L-250P_7G20LS-250P v.2 BLF7G20L-250P_7G20LS-250P v.2 20100909 Preliminary data sheet - BLF7G20L-250P_7G20LS-250P v.1 BLF7G20L-250P_7G20LS-250P v.1 20091216 Objective data sheet - - BLF7G20L-250P_7G20LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 15 BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. 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Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. BLF7G20L-250P_7G20LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 15 BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLF7G20L-250P_7G20LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 14 of 15 BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.6 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 Single carrier W-CDMA. . . . . . . . . . . . . . . . . . . 5 One tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2-carrier WCDMA characteristics . . . . . . . . . . . 7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Handling information. . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF7G20L-250P_7G20LS-250P