BLF10H6600PSU

BLF10H6600P; BLF10H6600PS Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information Test signal f PL(AV) PL(M) Gp D IMD3 (MHz) (W) (W) (dB) (%) (dBc) RF performance in a common source 860 MHz narrowband test circuit 2-tone, class-AB f1 = 860; f2 = 860.1 250 - 20.8 46 32 pulsed, class-AB 860 - 600 19.8 58 - 1.2 Features and benefits          Excellent ruggedness (VSWR  40 : 1 through all phases) Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W High power gain High efficiency Designed for broadband operation (400 MHz to 1000 MHz) Internal input matching for high gain and optimum broadband operation Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Communication transmitter applications  Industrial applications BLF10H6600P; BLF10H6600PS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF10H6600P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 2 1 5 3 3 4 5 4 [1] source 2 sym117 BLF10H6600PS (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 4 5 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF10H6600P - flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A BLF10H6600PS - earless flanged balanced ceramic package; 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Max Unit VDS drain-source voltage - 110 V gate-source voltage 0.5 +11 V Tstg storage temperature 65 +150 C - 225 C [1] Product data sheet Min VGS Tj BLF10H6600P_BLF10H6600PS#3 Conditions junction temperature [1] Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF calculator. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 18 BLF10H6600P; BLF10H6600PS Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-c) [1] Conditions Typ thermal resistance from junction to case Tcase = 80 C; PL(AV) = 250 W [1] Unit 0.15 K/W Rth(j-c) is measured under RF conditions. 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.4 mA [1] [1] Min Typ Max Unit 110 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 240 mA 1.4 1.9 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 36 - A IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 280 nA RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 8.5 A - 143 - m [1] [1] ID is the drain current. Table 7. AC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz Coss output capacitance Crss reverse transfer capacitance [1] [1] - 220 - pF VGS = 0 V; VDS = 50 V; f = 1 MHz - 74 - pF VGS = 0 V; VDS = 50 V; f = 1 MHz - 1.2 - pF Capacitance values without internal matching. Table 8. RF characteristics RF characteristics in Ampleon production narrowband test circuit; Tcase = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - 50 - 2-Tone, class-AB VDS BLF10H6600P_BLF10H6600PS#3 Product data sheet drain-source voltage [1] V IDq quiescent drain current - 1.3 - A PL(AV) average output power f1 = 860 MHz; f2 = 860.1 MHz 250 - - W Gp power gain f1 = 860 MHz; f2 = 860.1 MHz 19.8 20.8 - dB D drain efficiency f1 = 860 MHz; f2 = 860.1 MHz 42 46 - % IMD3 third-order intermodulation f1 = 860 MHz; f2 = 860.1 MHz distortion - 32 28 dBc All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 18 BLF10H6600P; BLF10H6600PS Power LDMOS transistor Table 8. RF characteristics …continued RF characteristics in Ampleon production narrowband test circuit; Tcase = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - 50 - V - 1.3 - A - 600 - W Pulsed, class-AB VDS drain-source voltage IDq quiescent drain current PL(M) peak output power Gp power gain f = 860 MHz 17.2 19.8 - dB D drain efficiency f = 860 MHz 54 58 - % tp pulse duration - 100 - s  duty cycle - 20 - % [1] [1] f = 860 MHz IDq for total device 001aam579 400 Coss (pF) 300 200 100 0 0 20 40 60 VDS (V) VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; typical values per section 7. Test information 7.1 Ruggedness in class-AB operation The BLF10H6600P and BLF10H6600PS are capable of withstanding a load mismatch corresponding to VSWR  40 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 1.3 A; PL = 600 W (pulsed); f = 860 MHz. BLF10H6600P_BLF10H6600PS#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 18 BLF10H6600P; BLF10H6600PS Power LDMOS transistor 7.2 Impedance information Table 9. Typical push-pull impedance Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(AV) = 600 W (pulsed CW). See Figure 2 for definition of transistor impedance. BLF10H6600P_BLF10H6600PS#3 Product data sheet f Zi ZL MHz   300 0.607 + j0 5.495 + j1.936 325 0.622  j1.441 5.324 + j2.008 350 0.639  j1.121 5.151 + j2.065 375 0.658  j0.826 4.977 + j2.107 400 0.679  j0.551 4.805 + j2.136 425 0.703  j0.291 4.634 + j2.153 450 0.73  j0.044 4.466 + j2.157 475 0.76 + j0.194 4.301 + j2.151 500 0.793 + j0.424 4.14 + j2.134 525 0.83 + j0.648 3.984 + j2.109 550 0.872 + j0.869 3.833 + j2.075 575 0.919 + j1.088 3.687 + j2.033 600 0.972 + j1.305 3.546 + j1.985 625 1.032 + j1.523 3.411 + j1.931 650 1.101 + j1.741 3.281 + j1.871 675 1.179 + j1.963 3.156 + j1.807 700 1.268 + j2.187 3.036 + j1.738 725 1.371 + j2.416 2.922 + j1.666 750 1.49 + j2.651 2.813 + j1.591 775 1.629 + j2.891 2.708 + j1.512 800 1.792 + j3.138 2.609 + j1.432 825 1.984 + j3.39 2.514 + j1.349 850 2.212 + j3.649 2.423 + j1.264 875 2.484 + j3.91 2.336 + j1.178 900 2.812 + j4.17 2.254 + j1.091 925 3.209 + j4.421 2.175 + j1.003 950 3.689 + j4.648 2.1 + j0.913 975 4.27 + j4.829 2.029 + j0.823 1000 4.967 + j4.927 1.96 + j0.733 All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 18 BLF10H6600P; BLF10H6600PS Power LDMOS transistor drain 1 gate 1 ZL Zi gate 2 drain 2 001aan207 Fig 2. Definition of transistor impedance 7.3 Test circuit information Table 10. List of components For test circuit, see Figure 3, Figure 4 and Figure 5. Component Description Value Remarks B1, B2 semi rigid coax 25 ; 49.5 mm UT-090C-25 (EZ 90-25) C1 multilayer ceramic chip capacitor 12 pF [1] C2, C3, C4, C5, C6 multilayer ceramic chip capacitor 8.2 pF [1] C7 multilayer ceramic chip capacitor 6.8 pF [2] C8 multilayer ceramic chip capacitor 2.7 pF [2] C9 multilayer ceramic chip capacitor 2.2 pF [2] C10, C13, C14 multilayer ceramic chip capacitor 100 pF [3] C11, C12 multilayer ceramic chip capacitor 10 pF [2] C15, C16 multilayer ceramic chip capacitor 4.7 F, 50 V C17, C18, C23, C24 multilayer ceramic chip capacitor 100 pF C19, C20 multilayer ceramic chip capacitor 10 F, 50 V C21, C22 electrolytic capacitor 470 F; 63 V C30 multilayer ceramic chip capacitor 10 pF [4] C31 multilayer ceramic chip capacitor 9.1 pF [4] C32 multilayer ceramic chip capacitor 3.9 pF [4] C33, C34, C35 multilayer ceramic chip capacitor 100 pF [4] C36, C37 multilayer ceramic chip capacitor 4.7 F, 50 V L1 microstrip - [5] (W  L) 15 mm  13 mm (W  L) 5 mm  26 mm Kemet C1210X475K5RAC-TU or capacitor of same quality. [2] TDK C570X7R1H106KT000N or capacitor of same quality. TDK C4532X7R1E475MT020U or capacitor of same quality. L2 microstrip - [5] L3, L32 microstrip - [5] (W  L) 2 mm  49.5 mm - [5] (W  L) 1.7 mm 3.5 mm - [5] (W  L) 2 mm  9.5 mm (W  L) 5 mm  13 mm L4 L5 microstrip microstrip L30 microstrip - [5] L31 microstrip - [5] (W  L) 2 mm  11 mm [5] (W  L) 2 mm  3 mm L33 microstrip - R1, R2 wire resistor 10  BLF10H6600P_BLF10H6600PS#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 18 BLF10H6600P; BLF10H6600PS Power LDMOS transistor Table 10. List of components …continued For test circuit, see Figure 3, Figure 4 and Figure 5. Component Description Value Remarks R3, R4 SMD resistor 5.6  0805 R5, R6 wire resistor 100  R7, R8 potentiometer 10 k [1] American technical ceramics type 800R or capacitor of same quality. [2] American technical ceramics type 800B or capacitor of same quality. [3] American technical ceramics type 180R or capacitor of same quality. [4] American technical ceramics type 100A or capacitor of same quality. [5] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.762 mm; Cu (top/bottom metallization); thickness copper plating = 35 m. BLF10H6600P_BLF10H6600PS#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 18 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx BLF10H6600P_BLF10H6600PS#3 Product data sheet +VG1(test) R7 C19 +VD1(test) L5 R3 C34 L32 50 Ω C33 C21 C11 L30 L2 C1 C32 L33 C5 C3 C8 L4 B2 C10 50 Ω B1 C31 R4 C15 C13 L3 L1 L31 C30 C2 C4 C35 C6 C7 C9 C12 C37 C14 C16 C22 R6 C23 C18 R2 C24 +VD2(test) C20 R8 +VG2(test) Fig 3. Class-AB common source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages Power LDMOS transistor 8 of 18 © Ampleon The Netherlands B.V. 2015. All rights reserved. See Table 10 for a list of components. 001aan763 BLF10H6600P; BLF10H6600PS Rev. 3 — 1 September 2015 All information provided in this document is subject to legal disclaimers. R1 C17 R5 C36 BLF10H6600P; BLF10H6600PS Power LDMOS transistor L3 L32 L5 L30 L1 50 mm L2 L31 L33 L4 L31 L2 L1 L30 L5 L32 L3 105 mm 001aam588 See Table 10 for a list of components. Fig 4. Printed-Circuit Board (PCB) for class-AB common source amplifier 49.6 mm 44 mm +VG1(test) +VD1(test) C23 R7 C36 + R1 C17 R5 C19 C21 C11 R3 C34 C33 50 Ω C15 C10 C1 C30 C32 C3 C7 C5 C9 C13 50 Ω C31 C35 C2 C4 C6 C14 C8 C12 4 mm C16 R4 C22 C37 R6 C20 R2 R8 C24 C18 + +VG2(test) +VD2(test) 6.3 mm 25.3 mm 26.3 mm 36.8 mm 001aan764 See Table 10 for a list of components. Fig 5. Component layout for class-AB common source amplifier BLF10H6600P_BLF10H6600PS#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 18 BLF10H6600P; BLF10H6600PS Power LDMOS transistor 7.4 Graphical data 7.4.1 Pulsed aaa-007877 63 aaa-007878 23 Gp (dB) PL (dBm) 61 21 (5) (4) Ideal PL (2) (3) 59 19 (2) (1) (1) PL 57 17 55 15 34 35 36 37 38 39 40 41 Pi (dBm) VDS = 50 V; IDq = 1300 mA; f = 860 MHz; tp = 100 s;  = 20 %. 0 100 200 300 400 500 600 PL (W) 700 VDS = 50 V; f = 860 MHz; tp = 100 s;  = 20 %. (1) IDq = 100 mA (1) PL(1dB) = 57.6 dBm (575 W) (2) IDq = 200 mA (2) PL(3dB) = 58.1 dBm (649 W) (3) IDq = 600 mA (4) IDq = 1000 mA (5) IDq = 1300 mA Fig 6. Output power as a function of input power; typical values BLF10H6600P_BLF10H6600PS#3 Product data sheet Fig 7. Power gain as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 18 BLF10H6600P; BLF10H6600PS Power LDMOS transistor aaa-007879 80 ηD (%) aaa-007880 22 80 Gp (dB) ηD (%) Gp 60 21 (1) (2) (3) (4) (5) 40 60 20 40 ηD 20 19 0 20 18 0 100 200 300 400 500 600 PL (W) 700 0 VDS = 50 V; f = 860 MHz; tp = 100 s;  = 20 %. 100 200 300 400 500 600 PL (W) 0 700 VDS = 50 V; IDq = 1300 mA; f = 860 MHz; tp = 100 s;  = 20 %. (1) IDq = 100 mA (2) IDq = 200 mA (3) IDq = 600 mA (4) IDq = 1000 mA (5) IDq = 1300 mA Fig 8. Drain efficiency as a function of output power; typical values Fig 9. aaa-007881 24 Gp (dB) Power gain and drain efficiency as function of output power; typical values aaa-007882 80 ηD (%) 22 60 (3) (4) (2) (1) (5) 20 40 18 (1) (2) (4) 20 (3) (5) 16 0 0 100 200 300 400 500 600 PL (W) 700 IDq = 1300 mA; f = 860 MHz; tp = 100 s;  = 20 %. 0 100 (1) VDS = 50 V (2) VDS = 45 V (2) VDS = 45 V (3) VDS = 40 V (3) VDS = 40 V (4) VDS = 35 V (4) VDS = 35 V (5) VDS = 30 V (5) VDS = 30 V BLF10H6600P_BLF10H6600PS#3 Product data sheet 300 400 500 600 PL (W) 700 IDq = 1300 mA; f = 860 MHz; tp = 100 s;  = 20 %. (1) VDS = 50 V Fig 10. Power gain as a function of output power; typical values 200 Fig 11. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 18 BLF10H6600P; BLF10H6600PS Power LDMOS transistor 7.4.2 2-Tone CW aaa-007883 0 IMD3 (dBc) -10 aaa-007884 22 80 Gp (dB) ηD (%) Gp 21 60 -20 (1) (2) -30 20 (3) 40 (4) ηD -40 (5) 19 20 -50 -60 18 0 50 100 150 200 250 300 350 PL(AV) (W) 400 VDS = 50 V; f1 = 860.0 MHz; f2 = 860.1 MHz. (1) IDq = 600 mA 0 50 100 150 200 250 300 350 PL(AV) (W) 0 400 VDS = 50 V; IDq = 1300 mA; f1 = 860.0 MHz; f2 = 860.1 MHz. (2) IDq = 1000 mA (3) IDq = 1300 mA (4) IDq = 1600 mA (5) IDq = 2000 mA Fig 12. Third-order intermodulation distortion as a function of average output power; typical values BLF10H6600P_BLF10H6600PS#3 Product data sheet Fig 13. Power gain and drain efficiency as function of average output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 18 BLF10H6600P; BLF10H6600PS Power LDMOS transistor 8. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q U1 3.30 3.05 2.26 2.01 35.56 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 10-02-02 12-05-02 SOT539A Fig 14. Package outline SOT539A BLF10H6600P_BLF10H6600PS#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 18 BLF10H6600P; BLF10H6600PS Power LDMOS transistor Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 inches nom 0.01 0.54 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 mm max nom min A b 4.7 11.81 c D D1 0.18 31.55 31.52 E E1 9.5 9.53 e F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.39 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 4.2 11.56 0.10 30.94 30.96 9.3 9.27 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot539b_po European projection Issue date 12-05-02 13-05-24 SOT539B Fig 15. Package outline SOT539B BLF10H6600P_BLF10H6600PS#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 14 of 18 BLF10H6600P; BLF10H6600PS Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 11. Abbreviations Acronym Description CCDF Complementary Cumulative Distribution Function CW Continuous Wave LDMOS Laterally Diffused Metal-Oxide Semiconductor SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio 11. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF10H6600P_BLF10H6600PS#3 20150901 Product data sheet - BLF10H6600P_BLF1 0H6600PS v.2 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF10H6600P_BLF10H6600PS v.2 20130620 Product data sheet - BLF0510H6600P v.1 BLF0510H6600P v.1 20121009 Objective data sheet - - BLF10H6600P_BLF10H6600PS#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 15 of 18 BLF10H6600P; BLF10H6600PS Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLF10H6600P_BLF10H6600PS#3 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 16 of 18 BLF10H6600P; BLF10H6600PS Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com BLF10H6600P_BLF10H6600PS#3 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 17 of 18 BLF10H6600P; BLF10H6600PS Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.4.1 7.4.2 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 5 Test circuit information . . . . . . . . . . . . . . . . . . . 6 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . 10 Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Handling information. . . . . . . . . . . . . . . . . . . . 15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF10H6600P_BLF10H6600PS#3