BLS6G2731S-120,112

BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) 2.7 to 3.1 32 120 13.5 48 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features  Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 s with  of 10 %:  Output power = 120 W  Power gain = 13.5 dB  Efficiency = 48 %  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (2.7 GHz to 3.1 GHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor 1.3 Applications  S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLS6G2731-120 (SOT502A) 1 drain 2 gate 3 1 1 3 [1] source 2 2 3 sym112 BLS6G2731S-120 (SOT502B) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description BLS6G2731-120 - flanged LDMOST ceramic package; 2 mounting holes; SOT502A 2 leads Version earless flanged LDMOST ceramic package; 2 leads BLS6G2731S-120 - SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLS6G2731-120_6G2731S-120#2 Product data sheet Symbol Parameter Min Max Unit VDS drain-source voltage - 60 V VGS gate-source voltage 0.5 +13 V ID drain current - 33 A Tstg storage temperature 65 +150 C Tj junction temperature - 225 C All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 13 BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Zth(j-mb) transient thermal impedance from junction Tcase = 85 C; PL = 120 W to mounting base t = 100 s;  = 10 % 0.23 K/W tp = 200 s;  = 10 % 0.28 K/W tp = 300 s;  = 10 % 0.32 K/W tp = 100 s;  = 20 % 0.33 K/W p Unit 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.6 mA Min Typ Max Unit 60 - - V 1.4 1.8 2.4 V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 180 mA IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.2 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 27 33 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS = 10 V; ID = 9 A 8.1 13 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 6.3 A - 0.085 0.135  7. Application information Table 7. Application information Mode of operation: pulsed RF; tp = 100 s;  = 10 %; RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production circuit. BLS6G2731-120_6G2731S-120#2 Product data sheet Symbol Parameter PL output power VCC supply voltage Gp RLin PL(1dB) output power at 1 dB gain compression D drain efficiency Pdroop(pulse) tr tf Min Typ Max Unit - 120 - W PL = 120 W - - 32 V power gain PL = 120 W 12 13.5 - dB input return loss PL = 120 W - 7 - dB - 130 - W PL = 120 W 40 48 - % pulse droop power PL = 120 W - 0 0.5 dB rise time PL = 120 W - 20 50 ns fall time PL = 120 W - 6 50 ns All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 Conditions © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 13 BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Table 8. f Typical impedance ZS ZL GHz   2.7 3.4  j7.2 4.6  j4.4 2.8 3.8  j5.9 3.8  j4.6 2.9 4.7  j4.8 3.0  j4.6 3.0 6.3  j4.1 2.3  j4.3 3.1 8.8  j4.9 1.8  j3.9 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLS6G2731-120 and BLS6G2731S-120 are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 100 mA; PL = 120 W; tp = 100 s;  = 10 %. BLS6G2731-120_6G2731S-120#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 13 BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor 7.2 Graphs 001aaj091 15 Gp (dB) 001aaj092 15 Gp (dB) 13 13 (1) (3) (2) (1) (3) (2) 11 11 9 9 7 7 0 40 80 120 160 0 40 80 120 PL (W) VDS = 32 V; IDq = 100 mA; tp = 300 s;  = 10 %. VDS = 32 V; IDq = 100 mA; tp = 100 s;  = 20 %. (1) f = 2.7 GHz (1) f = 2.7 GHz (2) f = 2.9 GHz (2) f = 2.9 GHz (3) f = 3.1 GHz (3) f = 3.1 GHz Fig 2. Power gain as a function of load power; typical values 001aaj093 60 Fig 3. Power gain as a function of load power; typical values 001aaj094 60 (1) (1) ηD (%) 160 PL (W) ηD (%) (2) (2) 40 40 (3) (3) 20 20 0 0 0 40 80 120 160 0 40 PL (W) VDS = 32 V; IDq = 100 mA; tp = 300 s;  = 10 %. 160 VDS = 32 V; IDq = 100 mA; tp = 100 s;  = 20 %. (1) f = 2.7 GHz (2) f = 2.9 GHz (2) f = 2.9 GHz (3) f = 3.1 GHz (3) f = 3.1 GHz Fig 4. Drain efficiency as a function of load power; typical values Product data sheet 120 PL (W) (1) f = 2.7 GHz BLS6G2731-120_6G2731S-120#2 80 Fig 5. Drain efficiency as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 13 BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor 001aaj095 160 001aaj096 160 PL (W) PL (W) 120 120 80 80 (1) (3) (2) 40 (1) (3) (2) 40 0 0 0 4 8 12 0 4 8 Pi (W) VDS = 32 V; IDq = 100 mA; tp = 300 s;  = 10 %. VDS = 32 V; IDq = 100 mA; tp = 100 s;  = 20 %. (1) f = 2.7 GHz (1) f = 2.7 GHz (2) f = 2.9 GHz (2) f = 2.9 GHz (3) f = 3.1 GHz (3) f = 3.1 GHz Fig 6. Load power as a function of input power; typical values 001aaj097 15 Gp (dB) Gp 13 ηD 11 Fig 7. Load power as a function of input power; typical values 60 ηD (%) 50 2.75 2.85 2.95 30 3.05 3.15 f (GHz) PL = 120 W; VDS = 32 V; IDq = 100 mA; tp = 300 s;  = 10 %. Fig 8. Power gain and drain efficiency as function of frequency; typical values BLS6G2731-120_6G2731S-120#2 Product data sheet 001aaj098 15 Gp (dB) Gp 13 60 ηD (%) 50 ηD 40 9 2.65 12 Pi (W) 11 40 9 2.65 2.75 2.85 2.95 30 3.05 3.15 f (GHz) PL = 120 W; VDS = 32 V; IDq = 100 mA; tp = 100 s;  = 20 %. Fig 9. Power gain and drain efficiency as function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 13 BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor 8. Test information C3 C13 C8 C7 C5 C9 C6 C11 C12 C4 C10 R1 C1 C2 Rev3 001aaj099 Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with r = 6.15 and thickness = 0.64 mm. See Table 9 for list of components. Fig 10. Component layout for 2700 MHz to 3100 MHz test circuit Table 9. List of components See Figure 10. Component Description C1, C2 multilayer ceramic chip capacitor 24 pF C3 multilayer ceramic chip capacitor 47 F; 20 V C4, C6, C9, C10 multilayer ceramic chip capacitor 33 pF ATC 100A or equivalent C5, C11 multilayer ceramic chip capacitor 1 nF ATC 100A or equivalent C7, C8 multilayer ceramic chip capacitor 100 pF ATC 100B or equivalent C12 electrolytic capacitor C13 multilayer ceramic chip capacitor 10 F; 35 V R1 SMD resistor BLS6G2731-120_6G2731S-120#2 Product data sheet Value Remarks ATC 100A or equivalent 47 F; 63 V 56  SMD 0603 All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 13 BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 12-05-02 SOT502A Fig 11. Package outline SOT502A BLS6G2731-120_6G2731S-120#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 13 BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Earless flanged ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 07-05-09 12-05-02 SOT502B Fig 12. Package outline SOT502B BLS6G2731-120_6G2731S-120#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 13 BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym Description LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency S-band Short wave Band VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLS6G2731-120_6G2731S-120#2 20150901 Modifications: BLS6G2731-120_6G2731S-120#1 BLS6G2731-120_6G2731S-120#2 Product data sheet Product data sheet BLS6G2731-120_6G2731S-120 #1 • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. 20081114 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 - © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 13 BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. 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Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLS6G2731-120_6G2731S-120#2 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 13 BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com BLS6G2731-120_6G2731S-120#2 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 13 BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLS6G2731-120_6G2731S-120#2