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BLS7G2730LS-200PU

BLS7G2730LS-200PU

  • 厂商:

    AMPLEON(安谱隆)

  • 封装:

    SOT539B

  • 描述:

    FET RF 2CH 65V 3GHZ

  • 数据手册
  • 价格&库存
BLS7G2730LS-200PU 数据手册
BLS7G2730L-200P; BLS7G2730LS-200P LDMOS S-band radar power transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C. f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) 2.7 to 3.0 32 200 12 48 8 5 pulsed RF [2] 2.7 to 3.0 32 220 12.5 50 20 6 pulsed RF [3] 2.9 to 3.1 32 220 12.5 50 20 6 Test signal Class-AB production test circuit pulsed RF [1] Application circuit [1] tp = 300 s;  = 10 %; IDq = 100 mA [2] tp = 3000 s;  = 20 %; IDq = 50 mA [3] tp = 500 s;  = 20 %; IDq = 50 mA 1.2 Features and benefits          High efficiency Excellent ruggedness Designed for broadband operation Excellent thermal stability Easy power control Integrated ESD protection High flexibility with respect to pulse formats Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  S-band radar applications in the frequency range 2700 MHz to 3000 MHz BLS7G2730L(S)-200P LDMOS S-band radar power transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLS7G2730L-200P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 4 5 4 [1] source 2 sym117 BLS7G2730LS-200P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 4 5 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description BLS7G2730L-200P - BLS7G2730LS-200P - Version flanged balanced ceramic package; 2 mounting holes; SOT539A 4 leads earless flanged balanced ceramic package; 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C - 225 C Tj [1] junction temperature [1] Continuous use at maximum temperature will affect the reliability. BLS7G2730L-200P_LS-200P#4 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 15 BLS7G2730L(S)-200P LDMOS S-band radar power transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Zth(j-c) Conditions transient thermal impedance from junction to case Typ Unit tp = 300 s;  = 10 % 0.13 K/W tp = 3000 s;  = 20 % 0.19 K/W Tcase = 85 C; PL = 200 W 6. Characteristics Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ V(BR)DSS drain-source breakdown voltage Max Unit VGS = 0 V; ID = 1.2 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 120 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 22.5 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 0.12 A - 1 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 4.2 A - 0.13 -  Table 7. RF characteristics Test signal: pulsed RF; tp = 300 s;  = 10 %; RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL = 200 W 9.8 12 - dB RLin input return loss PL = 200 W - 10 6 dB D drain efficiency PL = 200 W 43 48 - % Pdroop(pulse) pulse droop power PL = 200 W - 0 0.25 dB tr rise time PL = 200 W - 8 50 ns tf fall time PL = 200 W - 5 50 ns 7. Test information 7.1 Ruggedness in class-AB operation The BLS7G2730L-200P and BLS7G2730LS-200P are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under following conditions: VDS = 32 V; IDq = 100 mA; PL = 200 W; f = 2700 MHz; tp = 300 s;  = 10 % BLS7G2730L-200P_LS-200P#4 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 15 BLS7G2730L(S)-200P LDMOS S-band radar power transistor 7.2 Impedance information Table 8. Typical impedance Measured load-pull data half device; VDS = 32 V; IDq = 100 mA. f ZS [1] ZL [1] (MHz) () () 2700 2.0  j5.8 3.7  j6.4 2800 1.6  j5.9 3.8  j6.9 2900 2.6  j6.2 3.8  j6.9 3000 3.4  j6.0 3.7  j6.4 [1] ZS and ZL defined in Figure 1. drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.3 Production test circuit 40 mm C2 40 mm C3 R1 C8 C4 C10 C9 C12 C11 C13 C1 60 mm C5 R2 C16 C14 C6 C7 C15 C17 aaa-007719 Printed-Circuit Board (PCB): Arlon TC600 with a thickness of 0.64 mm. See Table 9 for a list of components. Fig 2. Component layout for a class-AB production test circuit BLS7G2730L-200P_LS-200P#4 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 15 BLS7G2730L(S)-200P LDMOS S-band radar power transistor Table 9. List of components test circuit See Figure 2. Component Description Value C1, C3, C6, C9, C13, C15 multilayer ceramic chip capacitor 18 pF [1] C2, C5, C10, C16 multilayer ceramic chip capacitor 1 F [2] C4, C7, C8, C14 multilayer ceramic chip capacitor 12 pF [1] [2] C11, C17 multilayer ceramic chip capacitor 10 F C12 electrolytic capacitor 2200 F, 63 V R1, R2 chip resistor 9.1  [1] American Technical Ceramics type 600F or capacitor of same quality. [2] Murata or capacitor of same quality. [3] Vishay Dale or capacitor of same quality. Remarks ATC600F ATC600F [3] 7.4 Application circuit 20 mm C2 20 mm C3 C7 R2 C1 39 mm C9 C6 R1 C4 C8 C5 C10 aaa-007720 Printed-Circuit Board (PCB): Arlon TC600 with a thickness of 0.64 mm. See Table 10 for a list of components. Fig 3. Component layout for a class-AB application circuit Table 10. List of components application circuit See Figure 2. Component Description Value Remarks C1, C3, C5, C6, C7, C8 multilayer ceramic chip capacitor 12 pF [1] C2, C4 multilayer ceramic chip capacitor 1 F [2] C9, C10 electrolytic capacitor 2200 F, 50 V R1, R2 chip resistor 50  [1] American Technical Ceramics type 600F or capacitor of same quality. [2] Murata or capacitor of same quality. [3] Vishay Dale or capacitor of same quality. BLS7G2730L-200P_LS-200P#4 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 4 — 1 September 2015 ATC600F [3] © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 15 BLS7G2730L(S)-200P LDMOS S-band radar power transistor 7.5 Graphical data 7.5.1 Test circuit aaa-007721 300 PL (W) 250 aaa-007722 17 Gp (dB) 15 (1) (2) (3) (4) (5) 200 13 150 (1) (2) (3) (4) (5) 100 11 9 50 0 7 0 4 8 12 16 Pi (W) 20 0 VDS = 32 V; IDq = 100 mA; tp = 300 s;  = 10 %. 50 (1) f = 2700 MHz (2) f = 2800 MHz (2) f = 2800 MHz (3) f = 2850 MHz (3) f = 2850 MHz (4) f = 2900 MHz (4) f = 2900 MHz (5) f = 3000 MHz (5) f = 3000 MHz Output power as a function of input power; typical values 150 200 250 PL (W) 300 VDS = 32 V; IDq = 100 mA; tp = 300 s;  = 10 %. (1) f = 2700 MHz Fig 4. 100 Fig 5. Power gain as a function of output power; typical values BLS7G2730L-200P_LS-200P#4 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 15 BLS7G2730L(S)-200P LDMOS S-band radar power transistor aaa-007723 60 aaa-007724 18 ηD (%) 60 Gp (dB) ηD (%) 50 ηD 16 40 (1) (2) (3) (4) (5) 30 50 Gp 14 40 12 30 20 10 0 0 50 100 150 200 250 PL (W) 10 20 2650 2700 2750 2800 2850 2900 2950 3000 3050 f (MHz) 300 VDS = 32 V; IDq = 100 mA; tp = 300 s;  = 10 %. VDS = 32 V; PL = 200 W; IDq = 100 mA; tp = 300 s;  = 10 %. (1) f = 2700 MHz (2) f = 2800 MHz (3) f = 2850 MHz (4) f = 2900 MHz (5) f = 3000 MHz Fig 6. Drain efficiency as a function of output power; typical values Fig 7. Power gain and drain efficiency as function of frequency; typical values aaa-007725 16 RLin (dB) 12 8 4 0 2650 2700 2750 2800 2850 2900 2950 3000 3050 f (MHz) VDS = 32 V; PL = 200 W; IDq = 100 mA; tp = 300 s;  = 10 %. Fig 8. Input return loss as a function of frequency; typical values BLS7G2730L-200P_LS-200P#4 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 15 BLS7G2730L(S)-200P LDMOS S-band radar power transistor 7.5.2 Application circuit aaa-007726 300 PL (W) 250 aaa-007727 17 Gp (dB) 15 (5) (4) (3) (2) (1) 200 (1) (2) (3) (4) (5) 13 150 11 100 9 50 0 7 0 2 4 6 8 10 12 14 Pi (W) 16 VDS = 32 V; IDq = 50 mA; tp = 3000 s;  = 20 %. 0 50 (1) f = 2700 MHz (2) f = 2800 MHz (2) f = 2800 MHz (3) f = 2850 MHz (3) f = 2850 MHz (4) f = 2900 MHz (4) f = 2900 MHz (5) f = 3000 MHz 150 200 250 PL (W) 300 VDS = 32 V; IDq = 50 mA; tp = 3000 s;  = 20 %. (1) f = 2700 MHz Fig 9. 100 (5) f = 3000 MHz Output power as a function of input power; typical values Fig 10. Power gain as a function of output power; typical values BLS7G2730L-200P_LS-200P#4 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 15 BLS7G2730L(S)-200P LDMOS S-band radar power transistor aaa-007728 60 aaa-007729 20 ηD (%) 65 Gp (dB) 50 18 (1) (2) (3) (4) (5) 40 ηD (%) 55 ηD 16 45 30 Gp 14 35 12 25 20 10 0 0 50 100 150 200 250 PL (W) 10 15 2650 2700 2750 2800 2850 2900 2950 3000 3050 f (MHz) 300 VDS = 32 V; IDq = 50 mA; tp = 3000 s;  = 20 %. VDS = 32 V; PL = 220 W; IDq = 50 mA; tp = 3000 s;  = 20 %. (1) f = 2700 MHz (2) f = 2800 MHz (3) f = 2850 MHz (4) f = 2900 MHz (5) f = 3000 MHz Fig 11. Drain efficiency as a function of output power; typical values Fig 12. Power gain and drain efficiency as function of frequency; typical values aaa-007730 20 RLin (dB) 16 12 8 4 0 2650 2700 2750 2800 2850 2900 2950 3000 3050 f (MHz) VDS = 32 V; PL = 220 W; IDq = 50 mA; tp = 3000 s;  = 20 %. Fig 13. Input return loss as a function of frequency; typical values BLS7G2730L-200P_LS-200P#4 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 15 BLS7G2730L(S)-200P LDMOS S-band radar power transistor 8. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q U1 3.30 3.05 2.26 2.01 35.56 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 10-02-02 12-05-02 SOT539A Fig 14. Package outline SOT539A BLS7G2730L-200P_LS-200P#4 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 15 BLS7G2730L(S)-200P LDMOS S-band radar power transistor Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 inches nom 0.01 0.54 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 mm max nom min A b 4.7 11.81 c D D1 0.18 31.55 31.52 E E1 9.5 9.53 e F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.39 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 4.2 11.56 0.10 30.94 30.96 9.3 9.27 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot539b_po European projection Issue date 12-05-02 13-05-24 SOT539B Fig 15. Package outline SOT539B BLS7G2730L-200P_LS-200P#4 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 15 BLS7G2730L(S)-200P LDMOS S-band radar power transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 11. Abbreviations Acronym Description ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal-Oxide Semiconductor S-band Short wave band VSWR Voltage Standing-Wave Ratio 11. Revision history Table 12. Revision history Document ID Release date Data sheet status BLS7G2730S-200P_LS-200P#4 20150901 Modifications: Change notice Supersedes Product data sheet BLS7G2730S-200P_LS-200P v.3 • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLS7G2730S-200P_LS-200P v.3 20130712 Product data sheet - BLS7G2730S-200P_LS-200P v.2 20130603 Product data sheet - BLS7G2730S-200P_LS-200P v.1 20130129 Objective data sheet - BLS7G2730L-200P_LS-200P#4 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 4 — 1 September 2015 BLS7G2730S-200P_LS-200P v.2 BLS7G2730S-200P_LS-200P v.1 - © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 15 BLS7G2730L(S)-200P LDMOS S-band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. BLS7G2730L-200P_LS-200P#4 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 15 BLS7G2730L(S)-200P LDMOS S-band radar power transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLS7G2730L-200P_LS-200P#4 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 4 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 14 of 15 BLS7G2730L(S)-200P LDMOS S-band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.5.1 7.5.2 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 Production test circuit . . . . . . . . . . . . . . . . . . . . 4 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Handling information. . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLS7G2730L-200P_LS-200P#4
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