BLF521,112

BLF521 UHF power MOS transistor Rev. 6 — 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.ampleon.com http://www.semiconductors.philips.com use http://www.ampleon.com (Internet) sales.addresses@www.semiconductors.philips.com use http://www.ampleon.com/sales The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © Ampleon B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office (details via http://www.ampleon.com/sales). Thank you for your cooperation and understanding, Ampleon Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF521 PIN CONFIGURATION • High power gain • Easy power control ook, halfpage 1 • Gold metallization • Good thermal stability • Withstands full load mismatch d 3 2 • Designed for broadband operation. g MBB072 4 DESCRIPTION Top view Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT172D studless package, with a ceramic cap. All leads are isolated from the mounting base. MSB007 Fig.1 Simplified outline and symbol. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. PINNING - SOT172D PIN DESCRIPTION 1 source 2 gate 3 drain 4 source s WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-B 2003 Sep 02 f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 500 12.5 2 >10 >50 2 Philips Semiconductors Product specification UHF power MOS transistor BLF521 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 40 V VGS gate-source voltage − ±20 V ID drain current (DC) Ptot total power dissipation Tstg Tj − 1 A − 10 W storage temperature −65 150 °C junction temperature − 200 °C Tmb ≤ 25 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-mb thermal resistance from junction to mounting base 17.5 K/W Rth j-a thermal resistance from junction to ambient; note1 75 K/W Note 1. Mounted on printed-circuit board; see Fig.12. MRA989 5 MDA486 16 handbook, halfpage handbook, halfpage Ptot (W) ID (A) (2) 12 1 (1) (1) 8 (2) 4 0.1 1 10 VDS (V) 0 100 0 40 80 (1) Current in this area may be limited by RDSon. (1) Continuous operation. (2) Tmb = 25 °C. (2) Short-time operation during mismatch. Fig.2 DC SOAR. 2003 Sep 02 120 160 Tmb ( °C) Fig.3 Power derating curves. 3 Philips Semiconductors Product specification UHF power MOS transistor BLF521 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 3 mA 40 − − V IDSS drain-source leakage current VGS = 0; VDS = 12.5 V − − 10 µA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage ID = 3 mA; VDS = 10 V 2 − 4.5 V gfs forward transconductance ID = 0.3 A; VDS = 10 V 80 135 − mS RDSon drain-source on-state resistance ID = 0.3 A; VGS = 15 V − 3.5 4 Ω IDSX on-state drain current VGS = 15 V; VDS = 10 V − 1.3 − A Cis input capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 5.3 − pF Cos output capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 7.8 − pF Crs feedback capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 1.8 − pF VGS group indicator LIMITS (V) GROUP LIMITS (V) GROUP MIN. MAX. A 2.0 2.1 MIN. MAX. O 3.3 3.4 B 2.1 2.2 P 3.4 3.5 C 2.2 2.3 Q 3.5 3.6 D 2.3 2.4 R 3.6 3.7 E 2.4 2.5 S 3.7 3.8 F 2.5 2.6 T 3.8 3.9 G 2.6 2.7 U 3.9 4.0 H 2.7 2.8 V 4.0 4.1 J 2.8 2.9 W 4.1 4.2 K 2.9 3.0 X 4.2 4.3 L 3.0 3.1 Y 4.3 4.4 Z 4.4 4.5 M 3.1 3.2 N 3.2 3.3 2003 Sep 02 4 Philips Semiconductors Product specification UHF power MOS transistor BLF521 MDA485 15 T.C (mV/K) ID (mA) 10 1200 5 800 0 400 −5 1 102 10 ID (A) 0 103 0 VDS = 10 V. Fig.4 MDA484 1600 handbook, halfpage handbook, halfpage 4 8 12 16 20 VGS (V) VDS = 10 V; Tj = 25 °C. Temperature coefficient of gate-source voltage as a function of drain current; typical values. Fig.5 MDA483 5 Drain current as a function of gate-source voltage; typical values. MDA482 30 handbook, halfpage handbook, halfpage RDSon C (Ω) (pF) 4 20 3 Cos 2 10 Cis 1 0 0 0 40 80 120 Tj (°C) 0 160 ID = 0.3 A; VGS = 15 V. Fig.6 8 12 VDS (V) 16 VGS = 0; f = 1 MHz. Drain-source on-state resistance as a function of junction temperature; typical values. 2003 Sep 02 4 Fig.7 5 Input and output capacitance as functions of drain-source voltage; typical values. Philips Semiconductors Product specification UHF power MOS transistor BLF521 MDA481 5 handbook, halfpage Crs (pF) 4 3 2 1 0 0 4 8 12 VDS (V) 16 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION FOR CLASS-B OPERATION Tamb = 25 °C; RGS = 274 Ω, unless otherwise specified. RF performance in a common source class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) 500 12.5 10 2 > 10 typ. 13 > 50 typ. 60 Ruggedness in class-B operation The BLF521 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: VDS = 15.5 V; f = 500 MHz at rated output power. 2003 Sep 02 6 Philips Semiconductors Product specification UHF power MOS transistor BLF521 MDA480 20 Gp 100 ηD (%) 80 handbook, halfpage (dB) 16 Gp PL (W) 3 ηD 12 MDA479 4 handbook, halfpage 60 2 8 40 4 20 0 0.5 1.5 2.5 PL (W) 1 0 3.5 0 0 0.2 0.4 0.6 0.8 1.0 PIN (W) Class-B operation; VDS = 12.5 V; IDQ = 10 mA; ZL = 9.5 + j12.8; f = 500 MHz. Class-B operation; VDS = 12.5 V; IDQ = 20 mA; ZL = 9.5 + j12.8; f = 175 MHz. Fig.9 Fig.10 Load power as a function of input power; typical values. Power gain and efficiency as functions of load power; typical values. handbook, full pagewidth ,,,,, ,,,,, ,,,,, C12 50 Ω input C1 L1 L2 L5 D.U.T. C3 L3 L8 L9 BLF521 C2 L10 C15 L4 C4 C13 C14 L6 R1 C7 R6 C5 C11 C8 L7 R2 C9 R3 C6 C10 +VD R4 R5 f = 500 MHz. Fig.11 Test circuit for class-B operation. 2003 Sep 02 7 MDA475 50 Ω output Philips Semiconductors Product specification UHF power MOS transistor BLF521 List of components class-AB test circuit (see Fig.12) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C5, C8, C15 multilayer ceramic chip capacitor; note 1 390 pF, 500 V C2, C13 film dielectric trimmer 2 to 9 pF C3 multilayer ceramic chip capacitor; note 2 5.6 pF, 500 V C4 film dielectric trimmer 2 to 18 pF 2222 809 09003 C6, C11 multilayer ceramic chip capacitor 2 × 100 nF in parallel, 50 V 2222 852 47104 C7, C9 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104 C10 electrolytic capacitor 10 µF, 63 V 2222 030 38109 C12 multilayer ceramic chip capacitor; note 2 9.1 pF, 50 V C14 film dielectric trimmer 1.4 to 5.5 pF L1 stripline; note 3 83 Ω 20 × 2 mm L2 stripline; note 3 83 Ω 21 × 2 mm 2222 809 09002 2222 809 09001 L3 stripline; note 3 83 Ω 19 × 2 mm L4, L5 stripline; note 3 67 Ω 12 × 3 mm L6 5 turns enamelled 0.5 mm copper wire 62 nH length 3.75 mm int. dia. 3 mm leads 2 × 4 mm L7 grade 3B Ferroxcube RF choke L8 stripline; note 3 83 Ω 18.6 × 2 mm L9 stripline; note 3 83 Ω 31.6 × 2 mm L10 stripline; note 3 83 Ω 2 × 2 mm R1 0.4 W metal film resistor 274 Ω 2322 151 72741 R2 0.4 W metal film resistor 1.96 kΩ 2322 151 71962 R3 0.4 W metal film resistor 1 MΩ 2322 151 71005 R4 cermet potentiometer 5 kΩ R5 0.4 W metal film resistor 7.5 kΩ 2322 151 77502 R6 1 W metal film resistor 10 Ω 2322 153 51009 4312 020 36642 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr = 2.2), thickness 1.6 mm. 2003 Sep 02 8 Philips Semiconductors Product specification UHF power MOS transistor BLF521 +VDS R4 andbook, full pagewidth C9 C11 C10 R3 R6 R2 L7 C5 C8 C7 C3 L1 L2 L3 C6 R1 L5 L4 C15 C12 L6 L8 L9 L10 C1 C2 C4 C13 C14 MBA381 150 mm handbook, full pagewidth rivets strap strap rivets 70 mm strap strap rivets mounting screws (6x) MBA380 The circuit and components are situated on one side of the printed-circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Fig.12 Component layout for 500 MHz test circuit. 2003 Sep 02 9 Philips Semiconductors Product specification UHF power MOS transistor BLF521 MDA478 50 MDA477 50 ZL handbook, halfpage handbook, halfpage (Ω) Zi (Ω) 40 ri 0 30 RL 20 xi −50 XL 10 −100 100 200 300 400 f (MHz) 0 100 500 Class-B operation; VDS = 12.5 V; IDQ = 10 mA; RGS = 274 Ω; PL = 2 W. 200 300 400 f (MHz) 500 Class-B operation; VDS = 12.5 V; IDQ = 10 mA; RGS = 274 Ω; PL = 2 W. Fig.13 Input impedance as a function of frequency (series components); typical values per section. Fig.14 Load impedance as a function of frequency (series components); typical values. MDA476 20 Gp handbook, halfpage (dB) 16 12 handbook, halfpage 8 4 Zi ZL MBA379 0 100 200 300 400 f (MHz) 500 Class-B operation; VDS = 12.5 V; IDQ = 10 mA; RGS = 274 Ω; PL = 2 W. Fig.16 Power gain as a function of frequency; typical values. Fig.15 Definition of MOS impedance. 2003 Sep 02 10 Philips Semiconductors Product specification UHF power MOS transistor BLF521 BLF521 scattering parameters VDS = 12.5 V; ID = 10 mA.; note 1 s11 f (MHz) s21 s12 s22 |s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ 5 1.00 −1.6 4.51 178.5 0.01 88.5 0.98 −2.0 10 1.00 −3.2 4.51 177.0 0.01 87.2 0.98 −4.0 20 1.00 −6.4 4.50 173.9 0.02 84.5 0.98 −8.0 30 1.00 −9.6 4.48 170.9 0.03 81.7 0.98 −12.0 40 0.99 −12.8 4.45 167.9 0.04 79.0 0.97 −16.0 50 0.99 −16.0 4.43 164.9 0.05 76.2 0.97 −19.9 60 0.98 −19.1 4.39 161.9 0.06 73.5 0.97 −23.8 70 0.97 −22.1 4.34 158.9 0.07 70.9 0.96 −27.6 80 0.97 −25.1 4.28 156.1 0.08 68.3 0.96 −31.3 90 0.96 −28.0 4.22 153.3 0.08 65.8 0.95 −34.9 100 0.95 −30.9 4.16 150.5 0.09 63.3 0.94 −38.5 125 0.92 −37.9 4.00 144.0 0.11 57.5 0.93 −47.1 150 0.90 −44.3 3.83 137.6 0.13 51.8 0.91 −55.2 175 0.87 −50.4 3.64 131.8 0.14 46.7 0.89 −62.7 200 0.85 −56.0 3.46 126.5 0.15 42.2 0.88 −69.6 250 0.80 −66.2 3.12 116.4 0.17 33.4 0.85 −81.9 300 0.77 −75.1 2.81 108.0 0.18 26.4 0.82 −92.3 350 0.74 −82.9 2.54 100.1 0.19 19.8 0.81 −101.3 400 0.72 −89.7 2.31 93.5 0.19 14.4 0.79 −108.9 450 0.70 −95.9 2.10 87.1 0.19 9.5 0.79 −115.5 500 0.69 −101.5 1.93 81.4 0.19 4.9 0.78 −121.2 600 0.69 −111.3 1.64 71.2 0.19 −2.6 0.78 −130.7 700 0.69 −119.9 1.41 62.2 0.18 −8.7 0.77 −138.5 800 0.69 −127.9 1.23 54.3 0.17 −13.6 0.78 −145.2 900 0.70 −135.1 1.08 47.3 0.15 −17.7 0.78 −151.4 1000 0.72 −142.0 0.97 40.9 0.14 −21.1 0.79 −156.9 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast 2003 Sep 02 11 Philips Semiconductors Product specification UHF power MOS transistor BLF521 PACKAGE OUTLINE Studless ceramic package; 4 leads SOT172D D A Q c D1 H b 4 b1 H 1 3 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 H Q mm 3.71 2.89 3.31 3.04 0.89 0.63 0.16 0.10 5.20 4.95 5.33 5.08 26.17 24.63 1.15 0.88 inches 0.146 0.114 0.13 0.12 0.035 0.025 0.006 0.004 0.205 0.195 0.210 0.200 1.03 0.97 0.045 0.035 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-06-28 SOT172D 2003 Sep 02 EUROPEAN PROJECTION 12 Philips Semiconductors Product specification UHF power MOS transistor BLF521 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Sep 02 13 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/05/pp14 Date of release: 2003 Sep 02 Document order number: 9397 750 11587