BLF246,112

BLF246 VHF power MOS transistor Rev. 5 — 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.ampleon.com http://www.semiconductors.philips.com use http://www.ampleon.com (Internet) sales.addresses@www.semiconductors.philips.com use http://www.ampleon.com/sales The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © Ampleon B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office (details via http://www.ampleon.com/sales). Thank you for your cooperation and understanding, Ampleon Philips Semiconductors Product specification VHF power MOS transistor BLF246 PINNING - SOT121B FEATURES • High power gain PIN • Low noise figure 1 drain • Easy power control 2 source • Good thermal stability 3 gate • Withstands full load mismatch. 4 source DESCRIPTION APPLICATIONS • Large signal amplifier applications in the VHF frequency range. handbook, halfpage 1 DESCRIPTION 4 Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the “General” section of the handbook for further information. d g 2 3 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. s MAM267 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 108 28 80 ≥16 ≥55 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2003 Aug 05 2 Philips Semiconductors Product specification VHF power MOS transistor BLF246 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage − ±20 V ID DC drain current − 13 A Ptot total power dissipation − 130 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb ≤ 25 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-mb thermal resistance from junction to mounting base 1.35 K/W Rth mb-h thermal resistance from mounting base to heatsink 0.2 K/W MRA931 50 MGG104 200 handbook, halfpage handbook, halfpage Ptot ID (A) (W) 150 10 (1) (2) (2) 100 (1) 1 50 10−1 1 10 VDS (V) 0 102 0 (1) Current is this area may be limited by RDSon. (2) Tmb = 25 °C. 100 Th (°C) (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. 2003 Aug 05 50 Fig.3 Power derating curves. 3 150 Philips Semiconductors Product specification VHF power MOS transistor BLF246 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 50 mA 65 − − V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 2.5 mA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage ID = 50 mA; VDS = 10 V 2 − 4.5 V ∆VGS gate-source voltage difference of matched pairs ID = 50 mA; VDS = 10 V − − 100 mV gfs forward transconductance ID = 2.5 A or 5 A; VDS = 10 V 3 4.2 − S RDSon drain-source on-state resistance ID = 5 A; VGS = 10 V − 0.2 0.3 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 22 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 225 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 180 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 25 − pF VGS group indicator LIMITS (V) GROUP LIMITS (V) GROUP MIN. MAX. MIN. MAX. A 2.0 2.1 O 3.3 3.4 B 2.1 2.2 P 3.4 3.5 C D 2.2 2.3 Q 3.5 3.6 2.3 2.4 R 3.6 3.7 E 2.4 2.5 S 3.7 3.8 F 2.5 2.6 T 3.8 3.9 G 2.6 2.7 U 3.9 4.0 H 2.7 2.8 V 4.0 4.1 J 2.8 2.9 W 4.1 4.2 K 2.9 3.0 X 4.2 4.3 L 3.0 3.1 Y 4.3 4.4 M 3.1 3.2 Z 4.4 4.5 N 3.2 3.3 2003 Aug 05 4 Philips Semiconductors Product specification VHF power MOS transistor BLF246 MGG105 2 MGG106 40 handbook, halfpage handbook, halfpage ID (A) T.C. (mV/K) 0 30 −2 20 −4 10 −6 10−2 10−1 1 ID (A) 0 10 0 10 15 20 VGS (V) VDS = 10 V; valid for Th = 25 to 70 °C. Fig.4 5 VDS = 10 V; Tj = 25 °C. Temperature coefficient of gate-source voltage as a function of drain current; typical values. Fig.5 MBD297 400 Drain current as a function of gate-source voltage; typical values. MRA930 800 handbook, halfpage RDSon C (pF) (Ω) 300 600 200 400 100 200 C os C is 0 0 0 50 100 o T j ( C) 0 150 10 20 30 40 VDS (V) VGS = 10 V; ID = 5 A. VGS = 0; f = 1 MHz. Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values. 2003 Aug 05 Fig.7 5 Input and output capacitance as functions of drain-source voltage; typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF246 MGG108 300 handbook, halfpage Crs (pF) 200 100 0 0 10 20 30 40 VDS (V) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION RF performance in CW operation in a common source test circuit. Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 12 Ω unless otherwise specified. f (MHz) VDS (V) ID (A) PL (W) Gp (dB) ηD (%) CW, class-B 108 28 0.1 80 >16 >55 CW, class-B 108 28 0.1 80 typ. 18 typ. 65 28 0(1) 80 typ. 15 typ. 72 MODE OF OPERATION CW, class-C 108 Note 1. VGS = 0 (class-C). Ruggedness in class-B operation The BLF246 is capable of withstanding a load mismatch corresponding to VSWR = 50: 1 through all phases under the following conditions: VDS = 28 V; f = 108 MHz; Th = 25 °C; Rth mb-h = 0.2 K/W at rated output power. Noise figure Measured with 80 W power-matched source and load in the test circuit (see Fig.9) with VDS = 28 V; ID = 2 A; f = 108 MHz; RGS = 27 Ω; Th = 25 °C; Rth mb-h = 0.2 K/W; F = typ. 3 dB. 2003 Aug 05 6 Philips Semiconductors Product specification VHF power MOS transistor BLF246 MGG095 MGG096 20 150 100 handbook, halfpage handbook, halfpage Gp Gp ηD (dB) PL (W) ηD (%) 100 10 50 50 0 50 100 50 0 150 0 PL (W) 0 1 2 3 4 PIN (W) 5 Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 Ω; f = 108 MHz; Th = 25 °C; Rth mb-h = 0.2 K/W. Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 Ω; f = 108 MHz; Th = 25 °C; Rth mb-h = 0.2 K/W. Fig.9 Fig.10 Load power as a function of input power; typical values. Power gain and efficiency as functions of load power; typical values. handbook, full pagewidth C12 C10 input 50Ω C1 L1 DUT C11 L2 L4 L6 output 50Ω L3 C7 C6 C2 C3 L5 R1 R3 C4 VDS L7 R2 C5 VG C8 C9 MGG097 Fig.11 Test circuit for class-B operation at 108 MHz. 2003 Aug 05 C13 C14 L8 7 Philips Semiconductors Product specification VHF power MOS transistor BLF246 List of components (see Figs 11 and 12). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C4, C5, C8, C14 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C2, C3, C6, C7 film dielectric trimmer 5 to 60 pF 2222 809 08003 C9 electrolytic capacitor 2.2 µF, 63 V 2222 030 38228 C10 multilayer ceramic chip capacitor; note 1 68 pF + 39 pF in parallel C11 multilayer ceramic chip capacitor; note 1 69 pF + 100 pF in parallel C12 multilayer ceramic chip capacitor; note 1 2x 100 pF in parallel C13 multilayer ceramic chip capacitor; note 1 62 pF L1 5 turns enamelled 0.6 mm copper wire 52 nH length 6.5 mm int. dia. 3 mm leads 2 × 10 mm L2 2 turns enamelled 0.6 mm copper wire 19 nH length 3.5 mm int. dia. 3 mm leads 2 × 7.5 mm L3, L4 stripline; note 2 31 Ω length 13 mm width 6 mm L5 3 turns enamelled 1.6 mm copper wire 36 nH length 12 mm int. dia. 6 mm leads 2 × 5 mm L6 hairpin of enamelled 1.6 mm copper wire 14 nH length 20 mm L7 grade 3B Ferroxcube HF choke L8 3 turns enamelled 1.6 mm copper wire 52 nH R1 metal film resistor 2 × 24 Ω in parallel, 0.4 W R2 metal film resistor 100 kΩ, 0.4 W R3 metal film resistor 10 Ω, 0.4 W 4312 020 36640 length 8 mm int. dia. 6 mm leads 2 × 9 mm Notes 1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality. 2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (εr = 4.5), thickness 1.6 mm. 2003 Aug 05 8 Philips Semiconductors Product specification VHF power MOS transistor BLF246 150 handbook, full pagewidth STRAP RIVET 70 STRAP L7 +VDS R3 C9 C5 R2 + VG C8 C4 L5 C1 C10 L1 R1 C11 L2 C2 C12 L8 L6 L3 C13 C14 L4 C3 C6 C7 MGG098 Dimensions in mm. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of hollow rivets, whilst under the source leads, copper straps are used for a direct contact between the upper and lower sheets. Fig.12 Component layout for 108 MHz class-B test circuit. 2003 Aug 05 9 Philips Semiconductors Product specification VHF power MOS transistor BLF246 MGG093 5 MGG094 6 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) ri 0 4 RL xi −5 2 XL −10 −15 0 0 50 100 150 0 200 50 100 150 200 f (MHz) f (MHz) Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 Ω; PL = 80 W; Th = 25 °C; Rth mb-h = 0.2 K/W. Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 Ω; PL = 80 W; Th = 25 °C; Rth mb-h = 0.2 K/W. Fig.13 Input impedance as a function of frequency (series components); typical values. Fig.14 Load impedance as a function of frequency (series components); typical values. MGG092 40 handbook, halfpage Gp (dB) 30 20 10 0 0 50 100 150 200 f (MHz) Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 Ω; PL = 80 W; Th = 25 °C; Rth mb-h = 0.2 K/W. Fig.15 Power gain as a function of frequency; typical values. 2003 Aug 05 10 Philips Semiconductors Product specification VHF power MOS transistor BLF246 BLF246 scattering parameters VDS = 28 V; ID = 50 mA; note 1 s11 f (MHz) s21 s12 s22 |s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ 5 0.83 −91.4 23.64 124.0 0.05 34.6 0.79 −88.1 10 0.75 −125.6 13.95 103.2 0.05 14.4 0.69 −122.2 20 0.73 −147.1 7.17 84.8 0.06 −2.7 0.68 −143.6 30 0.75 −154.3 4.64 73.4 0.05 −12.7 0.70 −150.6 40 0.78 −157.9 3.30 64.6 0.05 −20.1 0.73 −154.2 50 0.80 −160.3 2.48 57.5 0.04 −25.9 0.77 −156.7 60 0.83 −162.2 1.94 51.4 0.04 −30.5 0.80 −158.9 70 0.86 −164.1 1.56 46.1 0.04 −34.1 0.83 −160.8 80 0.88 −165.8 1.27 41.4 0.03 −36.8 0.85 −162.7 90 0.89 −167.3 1.06 37.6 0.03 −38.6 0.87 −164.3 100 0.91 −168.6 0.89 34.2 0.02 −39.6 0.89 −165.9 125 0.93 −171.7 0.62 27.1 0.02 −37.1 0.92 −169.3 150 0.95 −174.2 0.45 22.3 0.01 −20.7 0.94 −172.1 175 0.96 −176.6 0.34 19.3 0.01 24.3 0.95 −174.6 200 0.97 −178.3 0.27 17.4 0.01 62.3 0.96 −176.7 250 0.98 178.3 0.18 16.1 0.02 81.9 0.97 179.7 300 0.98 175.4 0.13 19.5 0.03 85.4 0.98 176.8 350 0.98 172.6 0.10 24.8 0.04 86.0 0.98 174.1 400 0.98 170.3 0.09 33.5 0.05 85.6 0.98 171.6 450 0.98 167.9 0.08 41.5 0.06 85.3 0.98 169.2 500 0.98 165.6 0.08 49.6 0.06 83.9 0.98 166.9 600 0.98 161.1 0.09 61.3 0.08 81.9 0.98 162.5 700 0.98 156.7 0.10 66.5 0.10 79.6 0.98 158.0 800 0.97 152.0 0.12 69.1 0.12 78.2 0.97 153.7 900 0.97 147.0 0.14 69.5 0.13 76.0 0.97 149.3 1000 0.96 142.0 0.16 70.1 0.16 74.3 0.97 144.8 Note 1. For more extensive S-parameters see internet: http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast. 2003 Aug 05 11 Philips Semiconductors Product specification VHF power MOS transistor BLF246 BLF246 scattering parameters VDS = 28 V; ID = 100 mA; note 1 s11 f (MHz) s21 s12 s22 |s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ 5 0.81 −113.3 30.83 116.1 0.04 26.8 0.77 −111.3 10 0.77 −142.3 17.04 99.5 0.04 11.1 0.72 −140.7 20 0.76 −158.6 8.64 85.7 0.04 −0.8 0.71 −156.6 30 0.77 −163.5 5.67 77.3 0.04 −7.7 0.72 −161.5 40 0.79 −165.8 4.12 70.5 0.04 −12.7 0.74 −163.3 50 0.80 −167.2 3.18 64.6 0.03 −16.7 0.76 −164.5 60 0.82 −168.2 2.54 59.3 0.03 −19.9 0.78 −165.4 70 0.84 −169.2 2.08 54.5 0.03 −22.4 0.80 −166.3 80 0.85 −170.0 1.74 50.4 0.03 −24.0 0.82 −167.1 90 0.87 −170.9 1.48 46.6 0.02 −24.9 0.84 −168.0 100 0.88 −171.8 1.27 43.0 0.02 −25.1 0.86 −169.0 125 0.90 −173.9 0.90 35.4 0.02 −20.6 0.89 −171.3 150 0.92 −175.9 0.67 29.8 0.01 −5.0 0.91 −173.3 175 0.94 −177.8 0.51 26.0 0.01 24.7 0.93 −175.2 200 0.95 −179.6 0.41 22.7 0.01 52.6 0.94 −177.1 250 0.96 177.3 0.27 18.6 0.02 76.2 0.96 179.7 300 0.97 174.4 0.20 17.8 0.03 82.2 0.97 176.9 350 0.97 171.7 0.15 19.4 0.03 84.2 0.97 174.3 400 0.97 169.2 0.13 23.4 0.04 84.3 0.98 171.9 450 0.97 166.7 0.11 28.4 0.05 84.6 0.98 169.6 500 0.97 164.3 0.10 34.9 0.06 83.3 0.98 167.4 600 0.97 159.5 0.09 46.8 0.07 81.6 0.98 163.1 700 0.96 154.5 0.10 55.1 0.09 79.5 0.98 158.8 800 0.96 149.3 0.11 61.0 0.10 78.8 0.98 154.5 900 0.95 143.6 0.12 63.0 0.11 76.3 0.97 150.0 1000 0.92 136.3 0.12 67.1 0.12 78.0 0.97 145.2 Note 1. For more extensive S-parameters see internet: http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast. 2003 Aug 05 12 Philips Semiconductors Product specification VHF power MOS transistor BLF246 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT121B D A F D1 q C B U1 c H b 4 α w2 M C M 3 A U3 U2 p w1 M A M B M 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 7.27 6.17 5.82 5.56 0.16 0.10 inches 0.286 0.243 0.229 0.006 0.219 0.004 OUTLINE VERSION F H p Q q U1 U2 U3 w1 w2 2.67 2.41 28.45 25.52 3.30 3.05 4.45 3.91 18.42 24.90 24.63 6.48 6.22 12.32 12.06 0.25 0.51 0.506 0.505 0.105 1.120 0.496 0.495 0.095 1.005 0.130 0.120 0.175 0.725 0.154 0.98 0.97 0.255 0.245 0.485 0.475 0.01 0.02 D D1 12.86 12.83 12.59 12.57 45° REFERENCES IEC JEDEC EIAJ SOT121B 2003 Aug 05 α EUROPEAN PROJECTION ISSUE DATE 99-03-29 13 Philips Semiconductors Product specification VHF power MOS transistor BLF246 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Aug 05 14 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/04/pp15 Date of release: 2003 Aug 05 Document order number: 9397 750 11597