BLF404
UHF power MOS transistor
Rev. 5 — 1 September 2015
Product data sheet
IMPORTANT NOTICE
Dear customer,
As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as
an independent company under the new trade name Ampleon, which will be used
in future data sheets together with new contact details.
In data sheets, where the previous Philips references is mentioned, please use
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The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with:
- © Ampleon B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest
sales office (details via http://www.ampleon.com/sales).
Thank you for your cooperation and understanding,
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Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
FEATURES
PINNING - SOT409A
• High power gain
PIN
• Easy power control
1, 8
source
• Gold metallization
2, 3
gate
• Good thermal stability
4, 5
source
• Withstands full load mismatch
6, 7
drain
DESCRIPTION
• Designed for broadband operation.
APPLICATIONS
halfpage
• Communication transmitters in the VHF/UHF range with
a nominal supply voltage of 12.5 V.
8
5
d
g
DESCRIPTION
MBB072
Silicon N-channel enhancement mode vertical D-MOS
power transistor in an 8-lead SOT409A SMD package with
a ceramic cap.
1
s
4
Top view
MBK150
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Tmb ≤ 60 °C in a common source test circuit.
MODE OF OPERATION
CW class-AB
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
500
12.5
4
≥10
≥50
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
2003 Sep 26
2
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
40
V
VGS
gate-source voltage
−
±20
V
ID
drain current (DC)
Ptot
total power dissipation
Tstg
Tj
−
1.5
A
−
8.3
W
storage temperature
−65
+150
°C
junction temperature
−
200
°C
Tmb ≤ 85 °C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
CONDITIONS
thermal resistance from junction to mounting base
MGM522
10
handbook, halfpage
ID
(A)
1
(1)
(2)
10−1
1
10
VDS (V)
102
(1) Current in this area may be limited by RDSon.
(2) Tmb = 85 °C.
Fig.2 DC SOAR.
2003 Sep 26
3
Tmb ≤ 85 °C, Ptot = 8.3 W
VALUE
UNIT
12.1
K/W
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage VGS = 0; ID = 5 mA
40
−
−
V
VGSth
gate-source threshold voltage
ID = 50 mA; VDS = 10 V
2
−
4.5
V
IDSS
drain-source leakage current
VGS = 0; VDS = 12.5 V
−
−
0.5
mA
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0
−
−
1
µA
IDSX
on-state drain current
VGS = 15 V; VDS = 10 V
−
2.3
−
A
RDSon
drain-source on-state resistance ID = 0.7 A; VGS = 15 V
−
1.8
2.7
Ω
gfs
forward transconductance
ID = 0.7 A; VDS = 10 V
200
270
−
mS
Cis
input capacitance
VGS = 0; VDS = 12.5 V; f = 1 MHz
−
14
−
pF
Cos
output capacitance
VGS = 0; VDS = 12.5 V; f = 1 MHz
−
17
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 12.5 V; f = 1 MHz
−
3
−
pF
VGS group indicator
LIMITS
(V)
GROUP
A
LIMITS
(V)
GROUP
MIN.
MAX.
2.0
2.1
O
MIN.
MAX.
3.3
3.4
B
2.1
2.2
P
3.4
3.5
C
2.2
2.3
Q
3.5
3.6
D
2.3
2.4
R
3.6
3.7
E
2.4
2.5
S
3.7
3.8
F
2.5
2.6
T
3.8
3.9
G
2.6
2.7
U
3.9
4.0
H
2.7
2.8
V
4.0
4.1
J
2.8
2.9
W
4.1
4.2
K
2.9
3.0
X
4.2
4.3
L
3.0
3.1
Y
4.3
4.4
Z
4.4
4.5
M
3.1
3.2
N
3.2
3.3
2003 Sep 26
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
MRA254
25
handbook, halfpage
T.C.
(mV/K)
ID
(A)
15
2
5
1
−5
10
MRA249
3
handbook, halfpage
102
103
0
104
0
4
8
12
16
20
VGS (V)
ID(mA)
VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.3
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Fig.4
MRA246
MRA253
5
50
handbook, halfpage
handbook, halfpage
RDSon
(Ω)
C
(pF)
4
40
3
30
2
20
1
10
0
0
Drain current as a function of gate-source
voltage; typical values.
50
100
Tj (oC)
0
150
Cos
Cis
0
4
8
12
16
VDS (V)
ID = 0.7 A; VGS = 15 V.
VGS = 0; f = 1 MHz; Tj = 25 °C.
Fig.5
Drain-source on-state resistance as a
function of junction temperature; typical
values.
2003 Sep 26
Fig.6
5
Input and output capacitance as functions
of drain-source voltage; typical values.
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
MRA256
10
handbook, halfpage
Crs
(pF)
8
6
4
2
0
0
4
8
12
VDS (V)
16
VGS = 0; f = 1 MHz; Tj = 25 °C.
Fig.7
Feedback capacitance as a function of
drain-source voltage; typical values.
APPLICATION INFORMATION
RF performance at Tmb ≤ 60 °C in a common source test circuit with the device soldered on a printed-circuit board with
through metallized holes.
MODE OF OPERATION
CW, class-AB
f
(MHz)
VDS
(V)
IDQ
(A)
PL
(W)
Gp
(dB)
ηD
(%)
500
12.5
50
4
≥10
≥50
typ. 11.5
typ. 55
Ruggedness in class-AB operation
The BLF404 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: f = 500 MHz; VDS = 12.5 V; PL = 4 W; Tmb ≤ 60 °C.
2003 Sep 26
6
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
MGM520
20
Gp
(dB)
handbook, halfpage
(%)
16
PL
(W)
80
4
ηD
12
MGM521
6
100
ηD
handbook, halfpage
60
Gp
40
8
2
20
4
0
0
0
2
4
0
0
6
PL (W)
200
400
PD (mW)
CW, class-AB operation; f = 500 MHz; VDS = 12.5 V;
IDQ = 50 mA; Tmb ≤ 60 °C.
CW, class-AB operation; f = 500 MHz; VDS = 12.5 V;
IDQ = 50 mA; Tmb ≤ 60 °C.
Fig.8
Fig.9
Power gain and drain efficiency as functions
of load power; typical values.
600
Load power as a function of drive power;
typical values.
+VD
handbook, full pagewidth
R3
R1
R4
R2
L1
C1
R6
C3
L2
C2
R5
C10
L8
input
50 Ω
C5
L6
L3
L7
DUT
C6
C7
C9
output
50 Ω
C12
C13
MGM523
C8
Fig.10 Test circuit for class-AB operation at f = 500 MHz.
2003 Sep 26
L11
C11
L5
C4
L4
L10
L9
7
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
List of components; see Figs 10 and 11.
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
C1
electrolytic capacitor
4.7 µF, 10 V
C2, C3
multilayer ceramic chip capacitor
47 nF
C4
multilayer ceramic chip capacitor; note 1
18 pF
C5, C10
multilayer ceramic chip capacitor; note 1
180 pF
C6, C11
multilayer ceramic chip capacitor; note 1
270 pF
C7
multilayer ceramic chip capacitor; note 1
22 pF
C8
multilayer ceramic chip capacitor; note 1
8.2 pF
C9
multilayer ceramic chip capacitor; note 1
2.7 pF
C12
multilayer ceramic chip capacitor; note 1
1.2 pF
C13
multilayer ceramic chip capacitor; note 1
12 pF
L1
2 turns 1 mm enamelled copper wire on
a grade 4B1 Ferroxcube core
ext. dia. = 4.2 mm
int. dia. = 2 mm
length = 6 mm
L2
3 turns 1 mm enamelled copper wire
int. dia. = 4.6 mm
leads = 2 x 5 mm
L3
bifilar coil
lead dia. = 0.8 mm
L4
bifilar coil
lead dia. = 1 mm
L5
stripline; note 2
50 Ω
8.8 × 2.38 mm
L6
stripline; note 2
50 Ω
5.8 × 2.38 mm
L7
stripline; note 2
50 Ω
6.8 × 2.38 mm
L8
stripline; note 2
50 Ω
3.76 × 2.38 mm
L9
stripline; note 2
50 Ω
5.8 × 2.38 mm
L10
stripline; note 2
50 Ω
4.48 × 2.38 mm
L11
stripline; note 2
50 Ω
3.13 × 2.38 mm
R1, R2
SMD resistor
3.9 kΩ
R3
metal film resistor
1 kΩ, 0.25 W
R4
metal film resistor
22 Ω, 0.25 W
R5
metal film resistor
10 kΩ, 0.25 W
R6
potentiometer
10 kΩ
CATALOGUE NO.
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (εr = 2.2);
thickness 0.79 mm, thickness of the copper sheet 2 x 35 µm.
2003 Sep 26
8
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
56
handbook, full pagewidth
31
2
1
3
+VD
R6
R1
R2
C1
R3
L1
R4
C2
C3
R5
L2
L3
L6
L7
C6
C4
C7
BLF404
C5
L5
C8
C10
L4
L8
L9
L10
L11
C11
C9
C12 C13
MGM524
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.11 Component layout for 500 MHz class-AB test circuit.
2003 Sep 26
9
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
MGM517
MGM518
0
8
handbook, halfpage
ri
(Ω)
16
handbook, halfpage
xi
(Ω)
xi
ZL
(Ω)
6
−20
12
4
−40
8
RL
−60
4
−80
600
0
2
XL
ri
0
0
200
400
f (MHz)
0
200
400
f (MHz)
600
CW, class-AB operation; VDS = 12.5 V; ID = 50 mA;
PL = 4 W; Tmb ≤ 60 °C.
CW, class-AB operation; VDS = 12.5 V; ID = 50 mA;
PL = 4 W; Tmb ≤ 60 °C.
Fig.12 Input impedance as a function of frequency
(series components); typical values.
Fig.13 Load impedance as a function of frequency
(series components); typical values.
MGM519
30
handbook, halfpage
Gp
(dB)
20
10
0
0
200
400
f (MHz)
600
CW, class-AB operation; VDS = 12.5 V; IDQ = 50 mA;
PL = 4 W; Tmb ≤ 60 °C.
Fig.14 Power gain as a function of frequency
(series components); typical values.
2003 Sep 26
10
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
MOUNTING RECOMMENDATIONS
Both the metallized ground plate and the device leads contribute to the heat flow. It is recommended that the transistor
be mounted on a grounded metallized area of the printed-circuit board. This area should be of maximum 0.8 mm
thickness and include at least 12 x 0.5 diameter through metallized holes filled with solder.
A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted
on the printed-circuit board.
handbook, full pagewidth
1.87 (2×)
0.60 (4×)
0.80 (2×)
0.50 (12×)
7.38 3.60
1.00 (8×)
1.00 (9×)
4.60
MGK390
Dimensions in mm.
Fig.15 Reflow soldering footprint for SOT409A.
2003 Sep 26
11
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
BLF404 scattering parameters
VDS = 12.5 V; ID = 50 mA; note 1.
s11
f (MHz)
s21
s12
s22
|s11|
∠Φ
|s21|
∠Φ
|s12|
∠Φ
|s22|
∠Φ
5
1.00
−5.2
12.97
176.0
0.01
86.0
0.96
−6.0
10
0.99
−10.1
12.89
171.9
0.02
82.2
0.96
−12.0
20
0.98
−20.6
12.61
164.1
0.03
74.8
0.95
−23.5
30
0.96
−30.4
12.18
156.6
0.05
67.6
0.93
−34.7
40
0.93
−39.6
11.62
149.6
0.06
60.9
0.91
−45.1
50
0.89
−48.0
11.00
143.2
0.07
54.8
0.89
−54.7
60
0.86
−55.8
10.37
137.4
0.08
49.4
0.87
−63.5
70
0.83
−62.9
9.74
132.2
0.09
44.4
0.85
−71.4
80
0.80
−69.4
9.15
127.5
0.10
40.1
0.83
−78.5
90
0.78
−75.3
8.60
123.2
0.10
36.2
0.82
−84.8
100
0.75
−80.7
8.08
119.3
0.10
32.7
0.80
−90.5
125
0.71
−92.2
6.96
110.7
0.11
25.1
0.77
−102.6
150
0.68
−101.4
6.03
103.9
0.12
19.1
0.76
−111.9
175
0.66
−108.9
5.30
98.3
0.12
14.4
0.74
−119.2
200
0.64
−115.2
4.73
93.2
0.12
10.2
0.74
−125.1
250
0.63
−124.9
3.81
84.5
0.12
3.5
0.73
−134.1
300
0.64
−132.5
3.19
77.4
0.12
−1.8
0.74
−140.5
350
0.64
−138.6
2.70
71.2
0.11
−6.1
0.74
−145.3
400
0.66
−143.8
2.34
65.7
0.11
−9.7
0.75
−149.1
450
0.67
−148.4
2.03
60.5
0.10
−12.5
0.76
−152.4
500
0.69
−152.6
1.80
56.0
0.09
−15.1
0.78
−155.2
600
0.72
−160.2
1.44
47.7
0.08
−18.2
0.80
−159.9
700
0.75
−167.1
1.18
40.4
0.07
−18.6
0.82
−163.9
800
0.78
−173.6
0.99
34.4
0.05
−15.0
0.84
−167.5
900
0.81
−179.8
0.84
29.2
0.04
-6.0
0.86
−170.7
1000
0.83
174.3
0.73
25.1
0.04
9.9
0.88
−173.6
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast
2003 Sep 26
12
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
PACKAGE OUTLINE
Ceramic surface mounted package; 8 leads
SOT409A
D
A
D2
B
c
w2 B
H1
8
5
L
E2
H
E
A
1
4
e
α
w1
b
Q1
0
2.5
5 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D2
E
E2
e
H
H1
L
Q1
w1
w2
α
mm
2.36
2.06
0.58
0.43
0.23
0.18
5.94
5.03
5.16
5.00
4.93
4.01
4.14
3.99
1.27
7.47
7.26
4.39
4.24
1.02
0.51
0.10
0.00
0.25
0.25
7°
0°
inches
0.093
0.081
0.023
0.017
0.009
0.007
0.234
0.198
0.203
0.197
0.194
0.158
0.163
0.157
0.050
0.294
0.286
0.173
0.167
0.040
0.020
0.004
0.000
0.010
0.010
7°
0°
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
98-01-27
SOT409A
2003 Sep 26
EUROPEAN
PROJECTION
13
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Sep 26
14
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
SCA75
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/04/pp15
Date of release: 2003
Sep 26
Document order number:
9397 750 11603
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