BLF245,112

BLF245 VHF power MOS transistor Rev. 5 — 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.ampleon.com http://www.semiconductors.philips.com use http://www.ampleon.com (Internet) sales.addresses@www.semiconductors.philips.com use http://www.ampleon.com/sales The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © Ampleon B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office (details via http://www.ampleon.com/sales). Thank you for your cooperation and understanding, Ampleon Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF245 PIN CONFIGURATION • High power gain • Low noise figure • Easy power control lfpage 1 4 • Good thermal stability d • Withstands full load mismatch. g MBB072 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. 2 3 MSB057 Fig.1 Simplified outline and symbol. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. PINNING - SOT123A PIN DESCRIPTION 1 drain 2 source 3 gate 4 source s WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a class-B test circuit. MODE OF OPERATION CW, class-B 2003 Sep 02 f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 175 28 30 >13 >50 2 Philips Semiconductors Product specification VHF power MOS transistor BLF245 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage VGS = 0 − 65 V VGS gate-source voltage VDS = 0 − ±20 V ID drain current (DC) − 6 A Ptot total power dissipation Tmb ≤ 25 °C − 68 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base Tmb = 25 °C; Ptot = 68 W 2.6 K/W Rth mb-h thermal resistance from mounting base to heatsink Tmb = 25 °C; Ptot = 68 W 0.3 K/W MRA921 10 MGP167 100 handbook, halfpage handbook, halfpage Ptot ID (A) (W) (1) 80 (2) (2) 60 1 (1) 40 20 10−1 1 10 VDS (V) 0 102 0 80 120 Th (°C) (1) Continuous operation. (2) Short-time operation during mismatch. (1) Current is this area may be limited by RDSon. (2) Tmb = 25 °C. Fig.2 DC SOAR. 2003 Sep 02 40 Fig.3 Power derating curves. 3 160 Philips Semiconductors Product specification VHF power MOS transistor BLF245 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 10 mA 65 − − V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 2 mA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V ∆VGS gate-source voltage difference of matched devices ID = 0 mA; VDS = 10 V − − 100 mV gfs forward transconductance ID = 1.5 A; VDS = 10 V 1.2 1.9 − S RDSon drain-source on-state resistance ID = 1.5 A; VGS = 10 V − 0.4 0.75 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 10 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 125 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 75 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 7 − pF F noise figure input and output power matched for: ID = 1 A; VDS = 28 V; PL = 30 W; R1 = 1 kΩ; Th = 25 °C; f = 175 MHz; see Fig.14 − 2 − dB VGS group indicator LIMITS (V) GROUP LIMITS (V) GROUP MIN. MAX. MIN. MAX. A 2.0 2.1 B 2.1 2.2 O 3.3 3.4 P 3.4 3.5 C 2.2 2.3 Q 3.5 3.6 D 2.3 2.4 R 3.6 3.7 E 2.4 2.5 S 3.7 3.8 F 2.5 2.6 T 3.8 3.9 G 2.6 2.7 U 3.9 4.0 H 2.7 2.8 V 4.0 4.1 J 2.8 2.9 W 4.1 4.2 K 2.9 3.0 X 4.2 4.3 L 3.0 3.1 Y 4.3 4.4 M 3.1 3.2 Z 4.4 4.5 N 3.2 3.3 2003 Sep 02 4 Philips Semiconductors Product specification VHF power MOS transistor BLF245 MGP168 6 MGP169 12 handbook, halfpage handbook, halfpage T.C. (mV/K) 4 Tj = 25 °C ID (A) 125 °C 8 2 0 −2 4 −4 −6 10 102 103 ID (mA) 0 104 0 VDS = 10 V; valid for Tj = 25 to 125 °C. Fig.4 10 20 VGS (V) VDS = 10 V. Temperature coefficient of gate-source voltage as a function of drain current; typical values. Fig.5 MGP170 0.8 Drain current as a function of gate-source voltage; typical values. MGP171 240 handbook, halfpage handbook, halfpage C (pF) RDSon (Ω) 200 0.6 160 0.4 Cis 120 0.2 Cos 80 0 0 40 80 120 Tj (°C) 40 160 0 VGS = 10 V; ID = 1.5 A. Fig.6 20 30 VDS (V) 40 VGS = 0; f = 1 MHz. Drain-source on-state resistance as a function of junction temperature; typical values. 2003 Sep 02 10 Fig.7 5 Input and output capacitance as functions of drain-source voltage; typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF245 MRA920 20 handbook, halfpage Crs (pF) 10 0 0 10 20 VDS (V) 30 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 1 kΩ. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) 175 28 50 30 >13 typ. 15.5 < 50 typ. 67 2.0 − j2.7 3.9 + j4.4 175 12.5 50 12 typ. 12 typ. 66 2.4 − j2.5 3.8 + j1.3 Zi (Ω)(1) ZL (Ω) Note 1. R1 included. Ruggedness in class-B operation The BLF245 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: Th = 25 °C; Rth mb-h = 0.3 K/W; at rated load power. 2003 Sep 02 6 Philips Semiconductors Product specification VHF power MOS transistor BLF245 MGP172 20 handbook, halfpage Gp (dB) 100 ηD (%) Gp MEA736 60 PL (W) handbook, halfpage 50 ηD 40 10 50 30 20 0 0 10 20 30 40 PL (W) 10 50 0 0.6 1.2 1.8 2.4 PIN (W) Class-B operation; VDS = 28 V; IDQ = 50 mA; f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W. Class-B operation; VDS = 28 V; IDQ = 50 mA; f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W. Fig.9 Fig.10 Load power as a function of input power; typical values. Power gain and efficiency as functions of load power; typical values. MGP173 20 handbook, halfpage 100 ηD (%) Gp (dB) MEA737 20 handbook, halfpage PL (W) ηD Gp 10 0 0 10 PL (W) 50 10 0 0 20 0 0.6 1.2 2.4 1.8 PIN (W) Class-B operation; VDS = 12.5 V; IDQ = 50 mA; f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W. Class-B operation; VDS = 12.5 V; IDQ = 50 mA; f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W. Fig.11 Power gain and efficiency as functions of load power; typical values. Fig.12 Load power as a function of input power; typical values. 2003 Sep 02 7 Philips Semiconductors Product specification VHF power MOS transistor BLF245 C7 handbook, full pagewidth C9 Zi 50 Ω input C1 L3 D.U.T. L6 L2 L1 C10 C2 L4 R1 C3 C5 C6 R2 R3 C4 L5 +VGG +VDD MGP174 f = 175 MHz. Fig.13 Test circuit for class-B operation. 2003 Sep 02 50 Ω output C8 8 Philips Semiconductors Product specification VHF power MOS transistor BLF245 List of components class-B test circuit (see Fig.14) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 film dielectric trimmer 4 to 40 pF 2222 809 07008 C2, C8 film dielectric trimmer 5 to 60 pF 2222 809 07011 C3 multilayer ceramic chip capacitor 100 pF 2222 854 13101 C4, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C5 ceramic capacitor 100 pF 2222 680 10101 C7 multilayer ceramic chip capacitor; note 1 18 pF C9 multilayer ceramic chip capacitor; note 1 27 pF C10 multilayer ceramic chip capacitor; note 1 24 pF L1 3 turns enamelled 0.5 mm copper wire 13.5 nH length 3.5 mm int. dia. 2 mm leads 2 × 2 mm L2, L3 stripline; note 2 30 Ω 10 × 6 mm L4 6 turns enamelled 1.5 mm copper wire 98 nH length 12.5 mm int. dia. 5 mm leads 2 × 2 mm L5 grade 3B Ferroxcube RF choke L6 2 turns enamelled 1.5 mm copper wire 24.5 nH length 4 mm int. dia. 5 mm leads 2 × 2 mm R1 metal film resistor 1 kΩ R2 metal film resistor 1 MΩ R3 metal film resistor 10 Ω 4312 020 36640 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (εr = 4.5), thickness 1⁄16 inch. 2003 Sep 02 9 Philips Semiconductors Product specification VHF power MOS transistor BLF245 135 handbook, full pagewidth copper straps rivets 72 copper strap copper straps +VGG C3 L5 C4 R2 C6 R3 L4 C1 C2 +VDD C5 R1 L1 C8 L2 L3 L6 C7 C9 C10 MGP175 Dimensions in mm. The circuit and components are situated on one side of the epoxy fibre-glass board; the other side is unetched copper and serves as an earth. Earth connections are made by means of fixing screws, hollow rivets and copper straps under the sources and around the edges, to provide a direct contact between the copper on the component side and the ground plane. Fig.14 Component layout for 175 MHz class-B test circuit. 2003 Sep 02 10 Philips Semiconductors Product specification VHF power MOS transistor BLF245 MGP177 40 MGP178 16 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) 30 12 RL 20 8 −xi 10 XL 4 ri 0 0 20 40 60 80 100 120 f (MHz) 20 40 60 80 100 120 f (MHz) Class-B operation; VDS = 28 V; IDQ = 50 mA; PL = 30 W; Th = 25 °C; Rth mb-h = 0.3 K/W. Class-B operation; VDS = 28 V; IDQ = 50 mA; PL = 30 W; Th = 25 °C; Rth mb-h = 0.3 K/W. Fig.15 Input impedance as a function of frequency (series components); typical values. Fig.16 Load impedance as a function of frequency (series components); typical values. MGP179 40 handbook, halfpage Gp (dB) 30 20 handbook, halfpage 10 Zi ZL MBA379 0 20 40 60 80 100 120 f (MHz) Class-B operation; VDS = 28 V; IDQ = 50 mA; PL = 30 W; Th = 25 °C; Rth mb-h = 0.3 K/W. Fig.18 Power gain as a function of frequency; typical values. Fig.17 Definition of MOS impedance. 2003 Sep 02 11 Philips Semiconductors Product specification VHF power MOS transistor BLF245 BLF245 scattering parameters VDS = 12.5 V; ID = 50 mA; note 1 s11 f (MHz) s21 s12 s22 |s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ 5 0.91 −48.3 25.72 147.1 0.03 57.9 0.92 −47.8 10 0.80 −81.4 19.43 125.8 0.05 36.8 0.81 −81.3 20 0.71 −116.7 11.79 102.4 0.06 15.0 0.71 −115.5 30 0.68 −132.3 8.04 89.7 0.06 3.3 0.69 −131.1 40 0.69 −140.3 5.97 80.8 0.06 −4.4 0.69 −139.0 50 0.71 −145.2 4.67 73.6 0.06 −10.2 0.71 −143.8 60 0.73 −148.6 3.76 67.5 0.05 −14.8 0.73 −147.2 70 0.75 −151.1 3.10 62.4 0.05 −18.4 0.75 −149.9 80 0.77 −153.1 2.61 57.9 0.05 −21.3 0.77 −152.1 90 0.79 −155.1 2.24 53.7 0.04 −23.8 0.79 −154.2 100 0.81 −157.3 1.94 49.8 0.04 −25.9 0.81 −156.1 125 0.84 −161.9 1.39 41.2 0.03 −28.0 0.85 −160.1 150 0.87 −165.0 1.04 35.4 0.02 −23.3 0.88 −163.4 175 0.91 −167.9 0.81 30.8 0.01 −8.4 0.91 −166.3 200 0.92 −171.0 0.65 26.6 0.01 22.4 0.92 −168.9 250 0.94 −175.5 0.44 21.6 0.02 72.1 0.95 −173.3 300 0.95 −179.8 0.32 19.2 0.03 83.0 0.96 −176.8 350 0.96 176.9 0.24 19.7 0.04 86.1 0.97 −179.8 400 0.96 173.5 0.19 22.1 0.05 86.1 0.97 177.5 450 0.97 170.6 0.16 26.1 0.06 86.2 0.97 174.9 500 0.97 167.8 0.14 31.6 0.08 84.7 0.98 172.6 600 0.96 162.4 0.13 43.5 0.10 82.6 0.98 168.4 700 0.96 157.2 0.13 52.9 0.12 80.0 0.97 164.4 800 0.94 152.4 0.14 58.9 0.13 77.9 0.97 160.6 900 0.95 147.8 0.16 63.1 0.15 74.4 0.95 157.1 1000 0.95 142.7 0.18 68.2 1.70 40.5 3.52 46.0 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast 2003 Sep 02 12 Philips Semiconductors Product specification VHF power MOS transistor BLF245 BLF245 scattering parameters VDS = 28 V; ID = 50 mA; note 1 s11 f (MHz) s21 s12 s22 |s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ 5 0.95 −40.5 27.84 152.9 0.02 63.8 0.93 −35.8 10 0.86 −71.3 22.60 133.3 0.04 44.4 0.83 −64.1 20 0.77 −108.6 14.77 109.1 0.05 21.7 0.69 −97.8 30 0.73 −126.8 10.37 95.5 0.05 9.1 0.65 −115.5 40 0.73 −136.8 7.81 86.2 0.05 1.0 0.64 −125.2 50 0.74 −142.9 6.17 78.8 0.05 −5.0 0.65 −131.3 60 0.75 −147.1 5.01 72.7 0.05 −9.6 0.67 −135.7 70 0.76 −150.0 4.17 67.5 0.05 −13.3 0.69 −139.1 80 0.78 −152.3 3.54 63.0 0.04 −16.3 0.72 −142.0 90 0.80 −154.5 3.06 58.8 0.04 −18.8 0.74 −144.6 100 0.81 −156.8 2.66 54.7 0.04 −20.9 0.76 −146.9 125 0.84 −161.5 1.93 46.0 0.03 −23.2 0.81 −152.0 150 0.87 −164.5 1.46 39.8 0.02 −18.9 0.84 −156.1 175 0.90 −167.4 1.15 34.7 0.01 −5.0 0.87 −159.7 200 0.91 −170.5 0.93 30.1 0.01 23.3 0.89 −162.9 250 0.93 −175.0 0.63 23.9 0.02 72.9 0.93 −168.1 300 0.95 −179.3 0.46 20.1 0.03 84.5 0.94 −172.4 350 0.96 177.3 0.35 18.8 0.04 87.7 0.96 −175.9 400 0.96 173.9 0.27 19.1 0.05 87.6 0.96 −179.1 450 0.97 171.0 0.22 20.9 0.06 87.6 0.97 178.1 500 0.96 168.1 0.19 24.2 0.07 86.0 0.97 175.5 600 0.96 162.7 0.16 34.0 0.10 83.7 0.97 170.8 700 0.96 157.5 0.15 43.8 0.11 81.1 0.97 166.5 800 0.94 152.4 0.15 51.6 0.13 78.8 0.97 162.5 900 0.95 148.1 0.16 57.8 0.15 75.2 0.95 158.8 1000 0.95 142.9 0.18 64.3 1.92 53.7 4.01 59.9 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.co/.markets/communications/wirelesscommunication/broadcast 2003 Sep 02 13 Philips Semiconductors Product specification VHF power MOS transistor BLF245 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT123A D A F D1 q C B U1 w2 M C M c H b 4 3 α A U2 p U3 w1 M A M B M 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 F H p Q q U1 U2 U3 w1 w2 mm 7.47 6.37 5.82 5.56 0.18 0.10 9.73 9.47 9.78 9.42 2.72 2.31 20.71 19.93 3.33 3.04 4.63 4.11 18.42 24.87 24.64 6.48 6.22 9.78 9.39 0.25 0.51 inches 0.294 0.251 0.229 0.007 0.219 0.004 0.383 0.385 0.107 0.815 0.373 0.371 0.091 0.785 0.131 0.120 0.182 0.980 0.725 0.162 0.970 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION 45° ISSUE DATE 99-03-29 SOT123A 2003 Sep 02 0.255 0.385 0.010 0.020 0.245 0.370 α 14 Philips Semiconductors Product specification VHF power MOS transistor BLF245 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Sep 02 15 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/04/pp16 Date of release: 2003 Sep 02 Document order number: 9397 750 11585