BLF3G21-6,135

BLF3G21-6 UHF power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance IDq = 90 mA; Th = 25 C in a common source test circuit. f PL Gp D IMD3 PL(1dB) (MHz) (W) (dB) (%) (dB) (W) CW 2000 7 12.5 43 - 7 Two-tone 2000 6 15.5 39 32 -