BLF2045,112

BLF2045 UHF power LDMOS transistor Rev. 7 — 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.ampleon.com http://www.semiconductors.philips.com use http://www.ampleon.com (Internet) sales.addresses@www.semiconductors.philips.com use http://www.ampleon.com/sales The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © Ampleon B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office (details via http://www.ampleon.com/sales). Thank you for your cooperation and understanding, Ampleon Philips Semiconductors Product specification UHF power LDMOS transistor BLF2045 PINNING FEATURES • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA PIN – Output power = 30 W (PEP) – Gain = 12.5 dB DESCRIPTION 1 drain 2 gate 3 source, connected to flange – Efficiency = 32% – dim = −26 dBc. • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability 1 • Designed for broadband operation (1800 to 2200 MHz) • No internal matching for broadband operation. 3 2 APPLICATIONS Top view • RF power amplifiers for GSM, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the 1800 to 2200 MHz frequency range MBK584 • Broadcast drivers. DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 1800 to 2200 MHz. Fig.1 Simplified outline. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BLF2045 − DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT467C QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION 2-tone, class-AB f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) dim (dBc) f1 = 2000; f2 = 2000.1 26 30 (PEP) >10 >30 ≤−25 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2004 Feb 11 2 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2045 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage − ±15 V ID drain current (DC) − 4.5 A Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL Rth(j-h) PARAMETER CONDITIONS thermal resistance from junction to heatsink Ptot = 87.5 W; Th = 25 °C; note 1 Note 1. Thermal resistance is determined under specified RF operating conditions. 2004 Feb 11 3 VALUE UNIT 2.1 K/W Philips Semiconductors Product specification UHF power LDMOS transistor BLF2045 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 0.7 mA 65 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 70 mA 1.5 − 3.5 V IDSS drain-source leakage current VGS = 0; VDS = 26 V − − 5 µA IDSX drain cut-off current VGS = VGSth + 9 V; VDS = 10 V 9 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 125 nA gfs forward transconductance VDS = 10 V; ID = 2.5 A − 2 − S RDSon drain-source on-state resistance VGS = VGSth + 9 V; ID = 2.5 A − 340 − mΩ Ciss input capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 38 − pF Coss output capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 31 − pF Crss feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 1.7 − pF MCD889 102 handbook, halfpage C (pF) Coss Ciss 10 Crss 1 0 10 20 VDS (V) 30 VGS = 0; f = 1 MHz. Fig.2 Input, output and feedback capacitance as functions of drain-source voltage, typical values. 2004 Feb 11 4 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2045 APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth(mb-h) = 0.65 K/W, unless otherwise specified. f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) dim (dBc) f1 = 2000; f2 = 2000.1 26 180 30 (PEP) >10 >30 ≤−25 MODE OF OPERATION 2-tone, class-AB Ruggedness in class-AB operation The BLF2045 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; PL = 30 W (CW); f = 2000 MHz. MCD890 20 Gp handbook, halfpage 50 ηD (%) (dB) 16 40 Gp 30 12 ηD 8 20 10 4 0 0 10 0 20 30 40 50 PL (PEP) (W) Class-AB operation; VDS = 26 V; IDQ = 180 mA; f1 = 2000 MHz; f2 = 2000.1 MHz. Fig.3 Power gain and efficiency as functions of peak envelope load power; typical values. 2004 Feb 11 5 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2045 MCD891 0 MCD892 0 handbook, halfpage handbook, halfpage dim (dBc) d3 (dBc) −20 −20 d3 d5 (1) −40 −40 d7 (3) (2) −60 −60 0 10 20 30 40 50 PL (PEP) (W) 0 20 30 40 50 PL (PEP) (W) VDS = 26 V; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. (1) IDQ = 140 mA. (2) IDQ = 180 mA. (3) IDQ = 220 mA. VDS = 26 V; IDQ = 180 mA; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. Fig.4 10 Intermodulation distortion as a function of peak envelope load power; typical values. Fig.5 Intermodulation distortion as a function of peak envelope load power; typical values. MCD893 5 MCD894 6 handbook, halfpage handbook, halfpage ZL zi (Ω) (Ω) 4 4 2 RL 3 xi 0 2 −2 1 XL −4 ri 0 1.8 1.9 2 −6 1.8 2.2 2.1 f (GHz) 1.9 2 2.2 2.1 f (GHz) VDS = 26 V; IDQ = 180 mA; PL = 45 W; Th ≤ 25 °C. VDS = 26 V; IDQ = 180 mA; PL = 45 W; Th ≤ 25 °C. Fig.6 Fig.7 Input impedance as a function of frequency (series components); typical values. 2004 Feb 11 6 Load impedance as a function of frequency (series components); typical values. Philips Semiconductors Product specification UHF power LDMOS transistor BLF2045 F1 handbook, full pagewidth R2 R1 C11 C12 C13 C14 Vgate C6 L4 50 Ω input L1 L2 C2 L3 C10 C5 L10 L5 C15 C16 L1 2 C3 C1 Vdd L6 C4 L9 L14 C9 L11 L13 L15 C7 L7 L16 50 Ω output C8 MCD895 L8 Fig.8 Class-AB test circuit for 2 GHz. 2004 Feb 11 7 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2045 List of components (see Figs 8 and 9) COMPONENT DESCRIPTION VALUE C2, C4, C7 and C8 Tekelec variable capacitor; type 37281 C3 multilayer ceramic chip capacitor; note 1 2.4 pF C1, C5, C9 and C10 multilayer ceramic chip capacitor; note 1 11 pF C11 multilayer ceramic chip capacitor; note 2 1 nF C12 multilayer ceramic chip capacitor DIMENSIONS CATALOGUE NO. 0.4 to 2.5 pF 100 nF C6, C13, C14 and C15 tantalum SMD capacitor 4.5 µF; 50 V C16 electrolytic capacitor 100 µF; 63 V F1 Ferroxcube chip-bead 8DS3/3/8/9-4S2 2222 581 16641 2222 037 58101 4330 030 36301 L1 stripline; note 3 50 Ω 13 × 0.9 mm L2 stripline; note 3 50 Ω 2 × 0.9 mm L3 stripline; note 3 34.3 Ω 15 × 1.7 mm L4 and L12 stripline; note 3 50 Ω 37 × 0.9 mm L5 stripline; note 3 34.3 Ω 6 × 1.7 mm L6 stripline; note 3 23.6 Ω 13 × 2.9 mm L7 stripline; note 3 5.6 Ω 6 × 15.8 mm L8 stripline; note 3 3.5 Ω 6 × 26 mm L9 stripline; note 3 31.9 Ω 12 × 1.9 mm L10 stripline; note 3 24.9 Ω 7.4 × 2.7 mm L11 stripline; note 3 50 Ω 3 × 0.9 mm L13 stripline; note 3 50 Ω 4.15 × 0.9 mm L14 stripline; note 3 26.3 Ω 2.5 × 2.5 mm L15 stripline; note 3 50 Ω 2.8 × 0.9 mm L16 stripline; note 3 50 Ω 14 × 0.9 mm R1 and R2 metal film resistor 10 Ω, 0.6 W 2322 156 11009 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 6.15); thickness 0.64 mm. 2004 Feb 11 8 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2045 50 handbook, full pagewidth 50 60 PH98072 IN PH98073 OUT − C15 C14 C13 F1 C6 C12 + C16 R1 C5 50 Ω input C11 R2 C10 C4 C1 C2 C9 50 Ω output C3 C7 PH98072 IN C8 PH98073 OUT MCD896 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 6.15), thickness 0.64 mm. The other side is unetched and serves as a ground plane. Fig.9 Component layout for 2 GHz class-AB test circuit. 2004 Feb 11 9 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2045 PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C D A F 3 D1 U1 B q c C 1 E1 H U2 E A w1 M A M B M p 2 Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H p Q q U1 U2 w1 w2 mm 4.67 3.94 5.59 5.33 0.15 0.10 9.25 9.04 9.27 9.02 5.92 5.77 5.97 5.72 1.65 1.40 18.54 17.02 3.43 3.18 2.21 1.96 14.27 20.45 20.19 5.97 5.72 0.25 0.51 inch 0.184 0.220 0.006 0.155 0.210 0.004 0.364 0.365 0.356 0.355 0.233 0.227 0.235 0.065 0.225 0.055 0.73 0.67 0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-12-06 99-12-28 SOT467C 2004 Feb 11 EUROPEAN PROJECTION 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2045 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Feb 11 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/06/pp12 Date of release: 2004 Feb 11 Document order number: 9397 750 12539