BLF1046
UHF power LDMOS transistor
Rev. 8 — 1 September 2015
Product data sheet
IMPORTANT NOTICE
Dear customer,
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Ampleon
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1046
FEATURES
PINNING - SOT467C
• High power gain
PIN
DESCRIPTION
• Easy power control
1
drain
• Excellent ruggedness
2
gate
• Source on underside eliminates DC isolators, reducing
common mode inductance
3
source, connected to flange
• Designed for broadband operation (HF to 1 GHz).
1
APPLICATIONS
• Communication transmitter applications in the UHF
frequency range.
3
2
DESCRIPTION
Top view
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
MBK584
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in the common source broadband test circuit.
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
CW, class-AB (2-tone)
f1 = 960; f2 = 960.1
26
45 (PEP)
>14
>35
≤−26
CW, class-AB (1-tone)
960
26
45
>14
>46
−
MIN.
MAX.
UNIT
MODE OF OPERATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VDS
drain-source voltage
−
65
V
VGS
gate-source voltage
−
±20
V
ID
drain current (DC)
−
4.5
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Dec 20
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1046
THERMAL CHARACTERISTICS
SYMBOL
Rth j-h
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to
heatsink
Th = 25 °C; Pdis = 97 W; note 1
1.87
K/W
Note
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 0.7 mA
65
−
−
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID = 70 mA
4
−
5
V
IDSS
drain-source leakage current
VGS = 0; VDS = 26 V
−
−
1
µA
IDSX
drain cut-off current
VGS = VGSth + 9 V; VDS = 10 V
12.5
−
−
A
IGSS
gate leakage current
VGS = ±20 V; VDS = 0
−
−
125
nA
gfs
forward transconductance
VDS = 10 V; ID = 3.5 A
−
2
−
S
RDSon
drain-source on-state resistance
VGS = VGSth + 9 V; ID = 3.5 A
−
300
−
mΩ
Cis
input capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
−
46
−
pF
Cos
output capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
−
37
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
−
1.5
−
pF
APPLICATION INFORMATION
RF performance in the common source class-AB broadband test circuit. Th = 25 °C; Rth j-h = 1.87 K/W,
unless otherwise specified.
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
CW, class-AB (2-tone)
f1 = 960; f2 = 960.1
26
300
45 (PEP)
>14
>35
≤−26
CW, class-AB (1-tone)
960
26
300
45
>14
>46
−
MODE OF OPERATION
Ruggedness in class-AB operation
The BLF1046 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 26 V; f = 960 MHz at rated load power.
Tuning Procedure
For high gain and efficiency:
In CW mode (PD = 1 W; f = 960 MHz) tune C2 and C16 (see Figs. 13 and 14) until IRL < −15 dB, then adjust C6 and C8
for high gain until Gp > 14 dB at PL = 50 W.
For linear mode:
Tune for high gain and efficiency mode, then apply two tone signal (f1 = 960 MHz; f2 = 960.1 MHz) at PL = 45 W (PEP)
and tune first C2 and then C6 and C8 for lowest d3 (below −28 dBc).
2000 Dec 20
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
MLD455
20
handbook, halfpage
Gp
Gp
(dB)
ηD
MLD456
20
80
80
handbook, halfpage
ηD
(%)
PAE
15
BLF1046
ηD
(%)
Gp
Gp
(dB)
15
60
60
ηD
10
40
10
40
5
20
5
20
0
0
0
0
40
20
PL (W)
60
0
0
40
20
60
PL (W)
VDS = 26 V; IDQ = 330 mA; Th ≤ 25 °C; f = 960 MHz;
tuned for high efficiency; see tuning procedure.
VDS = 26 V; IDQ = 330 mA; Th ≤ 25 °C; f = 960 MHz;
tuned for high linearity; see tuning procedure
Fig.2
Fig.3
Power gain and drain efficiency as functions
of load power; typical values.
MLD457
20
Gp
(dB)
(3)
15
d3
(dB)
−20
60
(1)
MLD458
handbook, halfpage
ηD
(%)
(2)
Power gain and drain efficiency as functions
of load power; typical values.
0
80
handbook, halfpage
80
(1)
10
(2)
−40
40
(3)
ηD
5
0
0
10
20
30
20
−60
0
−80
50
40
PL (PEP) (W)
(3) IDQ = 400 mA.
Fig.5
Power gain and drain efficiency as functions
of peak envelope power; typical values.
2000 Dec 20
10
20
30
50
40
PL (PEP) (W)
VDS = 26 V; Th ≤ 25 °C; f1 = 960 MHz; f2 = 960.1 MHz;
tuned for high linearity; see tuning procedure.
(1) IDQ = 240 mA.
(2) IDQ = 300 mA.
(3) IDQ = 400 mA.
VDS = 26 V; Th ≤ 25 °C; f1 = 960 MHz; f2 = 960.1 MHz;
tuned for high linearity; see tuning procedure.
(1) IDQ = 240 mA.
(2) IDQ = 300 mA.
Fig.4
0
4
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1046
MLD459
0
MLD460
0
handbook, halfpage
handbook, halfpage
d5
(dBc)
d7
(dBc)
−20
−20
−40
−40
(1)
(3)
(1)
(2)
−60
(3)
−60
(2)
−80
−80
50
40
PL (PEP) (W)
VDS = 26 V; Th ≤ 25 °C; f1 = 960 MHz; f2 = 960.1 MHz;
tuned for high linearity; see tuning procedure.
(1) IDQ = 240 mA.
(2) IDQ = 300 mA.
(3) IDQ = 400 mA.
VDS = 26 V; Th ≤ 25 °C; f1 = 960 MHz; f2 = 960.1 MHz;
tuned for high linearity; see tuning procedure.
(1) IDQ = 240 mA.
(2) IDQ = 300 mA.
(3) IDQ = 400 mA.
Fig.6
Fig.7
0
10
20
30
Fifth order intermodulation distortion as a
function of peak envelope load power;
typical values.
MLD461
10
0
10
20
30
50
40
PL (PEP) (W)
Seventh order intermodulation distortion as
a function of peak envelope load power;
typical values.
MLD462
20
40
handbook, halfpage
handbook, halfpage
EVM
(%)
η
Gp
(dB)
peak
(%)
Gp
8
15
30
6
η
10
20
4
5
rms
2
EVM
(%)
EVM
0
0
4
0
8
12
16
4
8
12
20
16
PL (W)
VDS = 26 V; IDQ = 300 mA; Th ≤ 25 °C; f = 960 MHz;
tuned for high linearity; see tuning procedure.
VDS = 26 V; IDQ = 300 mA; Th ≤ 25 °C; f = 960 MHz;
tuned for high linearity; see tuning procedure.
Error vector magnitude (EVM) / EDGE
8PSK as a functions of load power; typical
values.
2000 Dec 20
0
0
20
PL (W)
Fig.8
10
Fig.9
5
EDGE 8PSK EVM, gain and efficiency as
functions of load power; typical values.
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1046
MLD463
0
MLD464
20
handbook, halfpage
handbook, halfpage
ACPR
(dBc)
(dB)
−20
15
−40
10
200 KHz
80
ηD
(%)
Gp
Gp
60
ηD
40
250 KHz
−60
−80
0
4
8
20
5
400 KHz
12
16
0
850
20
PL (W)
900
950
f (MHz)
0
1000
VDS = 26 V; IDQ = 300 mA; Th ≤ 25 °C; f = 960 MHz;
tuned for high linearity; see tuning procedure.
Measured EDGE channel bandwidth 270 kHz and adjacent
channels bandwidth 30 kHz.
VDS = 28 V; IDQ = 300 mA; PL = 45 W (PEP); Th ≤ 25 °C;
tuned for high linearity; see tuning procedure
Measured in broadband test circuit; see Figs. 15 and 16.
Fig.10 EDGE 8PSK adjacent channel power as a
function of load power; typical values.
Fig.11 Power gain and drain efficiency as functions
of frequency; typical values.
MLD465
0
handbook, halfpage
dim
(dBc)
−20
d3
−40
d5
d7
−60
−80
850
900
950
f (MHz)
1000
VDS = 28 V; IDQ = 300 mA; PL = 45 W (PEP); Th ≤ 25 °C;
tuned for high linearity; see tuning procedure
Measured in broadband test circuit; see Figs. 15 and 16.
Fig.12 Intermodulation distortion as a function of
frequency; typical values.
2000 Dec 20
6
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1046
MLD468
4
handbook, halfpage
Zi
(Ω)
RL
ZL
(Ω)
2
2
ri
0
0
xi
−2
−4
840
MLD469
4
handbook, halfpage
XL
−2
880
920
f (MHz)
−4
840
960
880
920
f (MHz)
960
VDS = 26 V; IDQ = 300 mA; PL = 45 W; Th ≤ 25 °C;
tuned for high linearity; see tuning procedure.
VDS = 26 V; IDQ = 300 mA; PL = 45 W; Th ≤ 25 °C;
tuned for high linearity; see tuning procedure.
Fig.13 Optimal source impedance as a function of
frequency (series components);
typical values.
Fig.14 Optimal load impedance as a function of
frequency (series components);
typical values.
2000 Dec 20
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1046
R5
VDS (26 V)
R1
handbook, full pagewidth
C14
C15
R2
C13
F1
R3
C11
C9
C10
L2
R4
C5
C3
L6
L1
L8
L3
50 Ω
input
L4
C1
C7
L9
50 Ω
output
L7
L5
C8
C2
C16
MLD466
C6
C4
Fig.15 Class-AB broadband test circuit at f = 800 to 1000 MHz.
+ 26 V ground
IDQ adjustment
handbook, full pagewidth
R1
C13
R5
R2
F1
C9
R4
input
C11 C12
R3
C10
C14 C15
output
L1
L2
C3
C1
C5
C7
G TR D
C4
C16
C8
C2
C6
39 mm
MLD467
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.79 mm.
The other side is unetched and serves as a ground plane.
Fig.16 Component layout for 800 to 1000 MHz class-AB broadband test circuit.
2000 Dec 20
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1046
List of components (see Figs 15 and 16)
COMPONENT
DESCRIPTION
VALUE
C1, C7
multilayer ceramic chip capacitor; note 1 33 pF
C2, C6
Tekelec variable capacitor
C3, C4
multilayer ceramic chip capacitor; note 1 13 pF
DIMENSIONS
CATALOGUE NO.
0.8 to 8.2 pF
C5
multilayer ceramic chip capacitor; note 1 7.5 pF
C8, C16
Tekelec variable capacitor
C9, C11
multilayer ceramic chip capacitor; note 1 33 pF
C10, C12
multilayer ceramic chip capacitor; note 1 150 pF
C13, C14
multilayer ceramic chip capacitor
33 nF
C15
electrolytic capacitor
47 µF; 63 V
F1
Ferroxcube chip-bead 8DS3/3/8/9-4S2
L1
5 turns enamelled 0.6 mm copper wire
int. dia. = 4 mm;
length = 5 mm
L2
2 turns enamelled 0.6 mm copper wire
int. dia. = 4 mm;
length = 1.6 mm
L3
stripline; note 2
50 Ω
16 × 2.36 mm
L4
stripline; note 2
42.5 Ω
16 × 3.1 mm
L5
stripline; note 2
14.3 Ω
6 × 12 mm
L6
stripline; note 2
20.2 Ω
3 × 8 mm
L7
stripline; note 2
14.3 Ω
14 × 12 mm
L8
stripline; note 2
40 Ω
17 × 3.4 mm
L9
stripline; note 2
50 Ω
7 × 2.36 mm
R1, R5
metal film resistor
10 kΩ, 0.6 W
R2
variable resistor
10 kΩ
R3
metal film resistor
1 kΩ, 0.6 W
R4
metal film resistor
10 Ω, 0.6 W
0.5 to 4.6 pF
4330 030 36301
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 2.2); thickness 0.79 mm.
2000 Dec 20
9
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1046
PACKAGE OUTLINE
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT467C
D
A
F
3
D1
U1
B
q
c
C
1
E1
H
U2
E
A
w1 M A M B M
p
2
Q
w2 M C M
b
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
E
E1
F
H
p
Q
q
U1
U2
w1
w2
mm
4.67
3.94
5.59
5.33
0.15
0.10
9.25
9.04
9.27
9.02
5.92
5.77
5.97
5.72
1.65
1.40
18.54
17.02
3.43
3.18
2.21
1.96
14.27
20.45
20.19
5.97
5.72
0.25
0.51
inch
0.184 0.220 0.006
0.155 0.210 0.004
0.364 0.365
0.356 0.355
0.233
0.227
0.235 0.065
0.225 0.055
0.73
0.67
0.135 0.087
0.805 0.235
0.562
0.010 0.020
0.125 0.077
0.795 0.225
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
99-12-06
99-12-28
SOT467C
2000 Dec 20
EUROPEAN
PROJECTION
10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1046
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Dec 20
11
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Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. +66 2 361 7910, Fax. +66 2 398 3447
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
SCA 70
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/07/pp12
Date of release: 2000
Dec 20
Document order number:
9397 750 07658
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