BLF542
UHF power MOS transistor
Rev. 4 — 1 September 2015
Product data sheet
IMPORTANT NOTICE
Dear customer,
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Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
FEATURES
PINNING - SOT171A
• High power gain
PIN
DESCRIPTION
• Easy power control
1
source
• Good thermal stability
2
source
• Gold metallization ensures excellent reliability
3
gate
• Withstands full load mismatch
4
drain
• Designed for broadband operation.
5
source
6
source
APPLICATIONS
• Large signal amplifier applications in the UHF frequency
range.
handbook, halfpage
2
4
6
d
DESCRIPTION
s
g
N-channel enhancement mode vertical D-MOS power
transistor encapsulated in a 6-lead, SOT171A flange
package with a ceramic cap. All leads are isolated from the
flange.
1
3
5
Top view
MAM390
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source class-B circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
500
28
5
>13
>50
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2003 Sep 18
2
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
65
V
VGS
gate-source voltage
−
±20
V
−
1.5
A
−
20
W
storage temperature
−65
+150
°C
junction temperature
−
200
°C
ID
drain current (DC)
Ptot
total power dissipation
Tstg
Tj
Tmb = 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base
8.8
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
0.4
K/W
MRA735
10
MRA734
35
tot
(W)
30
handbook, halfpage
handbook,
P halfpage
ID
(A)
25
1
(2)
(1)
(2)
20
(1)
15
10−1
10
5
10−2
1
10
VDS (V)
0
10
102
(1) Current in this area may be limited by RDSon.
(2) Tmb = 25 °C.
50
70
90
110
130
Th (oC)
(1) Continuous operation.
(2) Short time operation during mismatch.
Fig.2 DC SOAR.
2003 Sep 18
30
Fig.3 Power derating curves.
3
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage ID = 0.1 mA; VGS = 0
65
−
−
V
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
−
−
10
µA
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0
−
−
1
µA
VGSth
gate-source threshold voltage
ID = 10 mA; VDS = 10 V
2
−
4.5
V
gfs
forward transconductance
ID = 0.3 A; VDS = 10 V
160
240
−
mS
RDSon
drain-source on-resistance
ID = 0.3 A; VGS = 15 V
−
3.3
5
Ω
IDSX
on-state drain current
VGS = 15 V; VDS = 10 V
−
1.4
−
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
14
−
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
9.4
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
1.7
−
pF
VGS group indicator
LIMITS
(V)
GROUP
LIMITS
(V)
GROUP
MIN.
MAX.
MIN.
MAX.
A
2.0
2.1
O
3.3
3.4
B
2.1
2.2
P
3.4
3.5
C
D
2.2
2.3
Q
3.5
3.6
2.3
2.4
R
3.6
3.7
E
2.4
2.5
S
3.7
3.8
F
2.5
2.6
T
3.8
3.9
G
2.6
2.7
U
3.9
4.0
H
2.7
2.8
V
4.0
4.1
J
2.8
2.9
W
4.1
4.2
K
2.9
3.0
X
4.2
4.3
L
3.0
3.1
Y
4.3
4.4
M
3.1
3.2
Z
4.4
4.5
N
3.2
3.3
2003 Sep 18
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
MBB777
4
MBB759
1.5
handbook, halfpage
handbook, halfpage
T.C.
(mV/K)
ID
(A)
2
1
0
0.5
–2
0
–4
0
100
200
ID (mA)
0
300
5
10
VGS (V)
15
VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Fig.5
MBB778
6
Drain current as a function of gate-source
voltage; typical values.
MBB776
30
handbook, halfpage
handbook, halfpage
RDS (on)
(Ω)
C
(pF)
4
20
Cis
Cos
10
2
0
0
0
50
100
Tj (oC)
0
150
10
ID = 0.3 A; VGS = 15 V
VGS = 0; f = 1 MHz.
Fig.6
Fig.7
Drain-source on-resistance as a function of
junction temperature; typical values.
2003 Sep 18
5
20
VDS (V)
30
Input and output capacitance as functions
of drain-source voltage; typical values.
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
MBB775
6
handbook, halfpage
Crs
(pF)
4
2
0
0
10
20
VDS (V)
30
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage; typical values.
APPLICATION INFORMATION FOR CLASS-B OPERATION
Tmb = 25 °C unless otherwise specified.
RF performance in CW operation in a common source class-B test circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
GP
(dB)
ηD
(%)
500
28
50
5
>13
typ. 16.5
>50
typ. 59
Ruggedness in class-B operation
The BLF542 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases under
the following conditions: VDS = 28 V; f = 500 MHz at rated output power.
2003 Sep 18
6
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
MRA969
20
handbook, halfpage
handbook, halfpage
η
Gp
Gp
(dB)
MRA970
10
80
PL
(W)
(%)
8
15
60
η
6
10
40
4
20
5
2
0
0
2
4
6
0
0
10
8
0
0.2
0.4
0.6
Class-B operation; VDS = 28 V; IDQ = 10 mA;
ZL = 9.7 + j24.5 Ω; f = 500 MHz.
Fig.9
Class-B operation; VDS = 28 V; IDQ = 10 mA;
ZL = 9.7 + j24.5 Ω; f = 500 MHz.
,,
Power gain and efficiency as functions of
load power; typical values.
handbook, full pagewidth
Fig.10 Load power as a function of input power;
typical values.
C9
C3
input
50 Ω
C1
L1
L2
C2
L3
DUT
L5
L6
C11
L7
L4
C4
L8
R1
C10
C13
output
50 Ω
C12
C6
MBB760
C5
R4
L9
C7
R2
R3
C8
VDD = + 28 V
f = 500 MHz.
Fig.11 Test circuit for class-B operation.
2003 Sep 18
0.8
PIN (W)
PL (W)
7
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
List of components (see Fig.11)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C5, C13
multilayer ceramic chip capacitor; note 1
390 pF
C2, C4, C10,
C12
film dielectric trimmer
2 to 18 pF
C3, C9
multilayer ceramic chip capacitor; note 1
39 pF
C6
multilayer ceramic chip capacitor; note 2
220 pF
C7
multilayer ceramic chip capacitor
100 nF
2222 852 47104
C8
electrolytic capacitor
63 V, 10 µF
2222 030 28109
C11
multilayer ceramic chip capacitor; note 1
10 pF
L1
stripline; note 3
50 Ω
11 mm × 2.5 mm
L2
stripline; note 3
50 Ω
37 mm × 2.5 mm
L3
stripline; note 3
50 Ω
13 mm × 2.5 mm
L4, L5
stripline; note 3
42 Ω
3 mm × 3 mm
L6
stripline; note 3
50 Ω
39 mm × 2.5 mm
L7
stripline; note 3
50 Ω
22 mm × 2.5 mm
L8
8 turns 0.8 mm enamelled copper wire
250 nH
length 9 mm
int. dia. 6 mm
leads 2 × 5 mm
L9
grade 3B Ferroxcube wideband RF choke
R1
metal film resistor
10 kΩ, 0.4 W
R2
10 turn potentiometer
50 kΩ
R3
metal film resistor
205 kΩ, 0.4 W
2322 151 72054
R4
metal film resistor
10 Ω, 0.4 W
2322 151 71009
222 809 05217
4312 020 36640
2322 151 71003
Notes
1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed circuit board with PTFE fibre-glass dielectric (εr = 2.2);
thickness 1⁄32 inch.
2003 Sep 18
8
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
handbook, full pagewidth
VD
VG
L9
C8
R4
C5
C6
C3
C1
L1
C2
L8
R1
L3
L2
C7
L5
L4
C9
C10
C4
C11
L7
L6
C13
C12
MBB762
150 mm
handbook, full pagewidth
rivet
(12x)
strap
(8x)
70 mm
mounting
screws
(12x)
MBB761
The components are mounted on one side of a copper-clad printed circuit board; the other side is unetched and
serves as a ground plane. Earth connections from the component side to the ground plane are made by means
of fixing screws, hollow rivets and copper foil straps, as shown.
Fig.12 Component layout for 500 MHz test circuit.
2003 Sep 18
9
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
MRA732
10
MRA733
70
handbook,
Z halfpage
handbook, halfpage
Zi
(Ω)
L
(Ω)
ri
60
0
50
−10
40
xi
−20
XL
30
RL
−30
20
−40
10
−50
100
200
300
400
0
100
500
200
300
400
f (MHz)
f (MHz)
500
Class-B operation; VDS = 28 V; IDQ = 10 mA; PL = 5 W.
Class-B operation; VDS = 28 V; IDQ = 10 mA; PL = 5 W.
Fig.13 Input impedance as a function of frequency
(series components); typical values.
Fig.14 Load impedance as a function of frequency
(series components); typical values.
MRA971
35
handbook,
gain halfpage
(dB)
30
25
20
handbook, halfpage
15
10
Zi
ZL
5
MBA379
0
100
200
300
400
500
f MHz)
Class-B operation; VDS = 28 V; IDQ = 10 mA; PL = 5 W.
Fig.16 Power gain as a function of frequency;
typical values.
Fig.15 Definition of MOS impedance.
2003 Sep 18
10
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
BLF542 scattering parameters
VDS = 28 V; ID = 10 mA; note 1
s11
f (MHz)
s21
s12
s22
|s11|
∠Φ
|s21|
∠Φ
|s12|
∠Φ
|s22|
∠Φ
5
1.00
−3.0
5.88
178.0
0.00
0.0
1.00
−2.3
10
1.00
−6.0
5.88
175.0
0.01
84.7
1.01
−6.0
20
1.00
−12.0
5.86
169.0
0.02
80.4
1.00
−11.0
30
0.99
−17.9
5.74
164.0
0.03
74.8
1.00
−17.2
40
0.98
−23.6
5.65
159.0
0.04
70.2
0.99
−22.4
50
0.98
−29.3
5.55
154.0
0.04
65.6
0.98
−27.3
60
0.97
−34.8
5.43
150.0
0.05
61.2
0.97
−32.1
70
0.96
−40.1
5.31
145.0
0.06
56.9
0.96
−36.8
80
0.94
−45.3
5.19
140.0
0.07
52.4
0.96
−41.8
90
0.93
−50.3
5.03
135.0
0.07
47.9
0.94
−46.9
100
0.92
−54.9
4.86
131.0
0.08
43.6
0.93
−51.6
125
0.89
−65.5
4.42
122.0
0.09
34.7
0.89
−61.6
150
0.87
−75.5
4.06
113.0
0.10
26.8
0.88
−70.0
175
0.85
−84.2
3.71
105.0
0.10
19.0
0.86
−78.2
200
0.83
−91.7
3.35
97.3
0.10
12.4
0.83
−85.3
250
0.82
−105.0
2.81
84.6
0.11
1.2
0.82
−96.8
300
0.81
−116.0
2.34
73.6
0.11
−8.6
0.81
−107.0
350
0.81
−125.0
2.00
64.0
0.10
−16.7
0.82
−115.0
400
0.81
−133.0
1.70
55.5
0.10
−23.8
0.82
−121.0
450
0.82
−140.0
1.48
47.7
0.09
−30.2
0.83
−128.0
500
0.83
−146.0
1.28
40.9
0.09
−35.6
0.84
−133.0
600
0.86
−157.0
1.00
29.0
0.08
−44.9
0.87
−142.0
700
0.87
−166.0
0.79
18.6
0.07
−52.3
0.89
−149.0
800
0.89
−175.0
0.64
9.8
0.06
−58.1
0.90
−155.0
900
0.90
178.0
0.53
2.0
0.05
−62.4
0.92
−160.0
1000
0.91
171.0
0.45
−4.8
0.04
−64.9
0.93
−165.0
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast.
2003 Sep 18
11
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
BLF542 scattering parameters
VDS = 28 V; ID = 50 mA.; note 1
s11
f (MHz)
s21
s12
s22
|s11|
∠Φ
|s21|
∠Φ
|s12|
∠Φ
|s22|
∠Φ
5
1.00
−4.1
12.20
177.0
0.00
0.0
0.99
−3.2
10
1.00
−8.2
12.20
173.0
0.01
83.5
1.00
−7.8
20
0.99
−16.3
12.10
167.0
0.02
78.1
0.99
−14.5
30
0.98
−24.1
11.70
161.0
0.03
71.7
0.98
−22.3
40
0.97
−31.7
11.40
155.0
0.03
66.2
0.96
−28.8
50
0.95
−39.1
11.10
150.0
0.04
60.9
0.94
−35.1
60
0.93
−46.1
10.70
144.0
0.05
55.8
0.93
−41.1
70
0.92
−52.7
10.30
139.0
0.06
51.1
0.91
−46.8
80
0.90
−59.1
9.92
134.0
0.06
46.2
0.89
−52.7
90
0.88
−65.1
9.47
129.0
0.07
41.6
0.87
−58.4
100
0.86
−70.3
9.00
125.0
0.07
37.3
0.85
−63.6
125
0.82
−81.9
7.95
116.0
0.08
28.7
0.80
−74.1
150
0.80
−92.5
7.12
107.0
0.08
21.2
0.78
−82.8
175
0.77
−101.0
6.37
99.9
0.08
14.2
0.75
−90.7
200
0.75
−109.0
5.68
93.5
0.08
8.5
0.73
−97.4
250
0.74
−121.0
4.67
82.4
0.09
−1.3
0.72
−108.0
300
0.73
−130.0
3.87
72.9
0.08
−9.4
0.71
−116.0
350
0.74
−138.0
3.29
64.5
0.08
−16.3
0.72
−123.0
400
0.75
−145.0
2.81
57.2
0.08
−22.2
0.73
−129.0
450
0.76
−151.0
2.44
50.3
0.07
−27.7
0.74
−134.0
500
0.77
−156.0
2.13
44.2
0.07
−32.2
0.75
−138.0
600
0.79
−165.0
1.67
33.3
0.06
−40.0
0.79
−145.0
700
0.82
−173.0
1.34
23.6
0.05
−46.1
0.82
−152.0
800
0.84
180.0
1.10
15.2
0.04
−50.4
0.85
−157.0
900
0.86
173.0
0.92
7.5
0.04
−52.9
0.87
−162.0
1000
0.87
167.0
0.78
0.7
0.03
−52.8
0.88
−166.0
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast.
2003 Sep 18
12
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads
SOT171A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
c
b
2
4
6
E1
H
E
U2
1
3
5
w1 M A M B M
p
A
Q
w3 M
b1
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
b1
c
D
D1
E
E1
e
mm
6.81
6.07
3.18
2.92
2.13
1.88
0.16
0.07
9.25
9.04
9.27
9.02
5.95
5.74
5.97
5.72
3.58
inches
F
H
H1
3.05 11.31 9.27
2.54 10.54 9.01
p
3.43
3.17
Q
q
U1
U2
4.32
24.90 5.97
18.42
4.11
24.63 5.72
w1
w2
w3
0.25
0.51
0.25
0.268 0.125 0.084 0.006 0.364 0.365 0.234 0.235
0.120 0.445 0.365 0.135 0.170
0.980 0.235
0.725
0.010 0.020 0.010
0.140
0.239 0.115 0.074 0.003 0.356 0.355 0.226 0.225
0.100 0.415 0.355 0.125 0.162
0.970 0.225
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT171A
2003 Sep 18
EUROPEAN
PROJECTION
ISSUE DATE
99-03-29
13
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Sep 18
14
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
SCA75
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/03/pp15
Date of release: 2003
Sep 18
Document order number:
9397 750 11588