BLF368,112

BLF368 VHF push-pull power MOS transistor Rev. 5 — 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.ampleon.com http://www.semiconductors.philips.com use http://www.ampleon.com (Internet) sales.addresses@www.semiconductors.philips.com use http://www.ampleon.com/sales The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © Ampleon B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office (details via http://www.ampleon.com/sales). Thank you for your cooperation and understanding, Ampleon Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF368 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. 1 2 d2 ndbook, halfpage g2 s g1 5 DESCRIPTION 3 Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors. 4 Top view DESCRIPTION 1 drain 1 2 drain 2 3 gate 1 4 gate 2 5 source MBB157 MSB008 Fig.1 Simplified outline and symbol. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. PINNING - SOT262A1 PIN d1 5 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull common source test circuit. MODE OF OPERATION CW, class-AB f (MHz) VDS (V) PL (W) Gp (dB) ∆Gp (dB) (note 1) ηD (%) 225 32 300 >12 >1 >55 typ. 13.5 typ. 0.4 typ. 62 Note 1. Assuming a third order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized input/25% synchronized output compression in television service (negative modulation, CCIR system). 2003 Sep 26 2 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor section unless otherwise specified VDS drain-source voltage − 65 V VGS gate-source voltage − ±20 V ID drain current (DC) − 25 A Ptot total power dissipation Tmb ≤ 25 °C total device; both sections equally loaded − 500 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base total device; both sections equally loaded 0.35 K/W Rth mb-h thermal resistance from mounting base to heatsink 0.15 K/W total device; both sections equally loaded MRA933 102 handbook, halfpage MGE616 500 handbook, halfpage Ptot (W) ID (A) 400 (2) (1) (2) (1) 300 10 200 100 1 1 10 VDS (V) 0 102 40 80 120 160 Th (°C) (1) Current in this area may be limited by RDSon. (2) Tmb = 25 °C. Total device; both sections equally loaded. (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. Fig.2 DC SOAR. 2003 Sep 26 0 Fig.3 Power derating curves. 3 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETERS CONDITIONS MIN. TYP. MAX. UNIT Per transistor section V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 100 mA 65 − − V IDSS drain-source leakage current VGS = 0; VDS = 32 V − − 5 mA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage ID = 100 mA; VDS = 10 V 2 − 4.5 V ∆VGS gate-source voltage difference of both transistor sections ID = 100 mA; VDS = 10 V − − 100 mV gfs forward transconductance ID = 8 A; VDS = 10 V 5 7.5 − S gfs1/gfs2 forward transconductance ratio of both transistor sections ID = 8 A; VDS = 10 V 0.9 − 1.1 RDSon drain-source on-state resistance ID = 8 A; VDS = 10 V − 0.1 0.15 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 37 − A Cis input capacitance VGS = 0; VDS = 32 V; f = 1 MHz − 495 − pF Cos output capacitance VGS = 0; VDS = 32 V; f = 1 MHz − 340 − pF Crs feedback capacitance VGS = 0; VDS = 32 V; f = 1 MHz − 40 − pF Cd-f drain-flange capacitance − 5.4 − pF VGS group indicator LIMITS (V) GROUP LIMITS (V) GROUP MIN. MAX. MIN. MAX. A 2.0 2.1 O 3.3 3.4 B 2.1 2.2 P 3.4 3.5 C D 2.2 2.3 Q 3.5 3.6 2.3 2.4 R 3.6 3.7 E 2.4 2.5 S 3.7 3.8 F 2.5 2.6 T 3.8 3.9 G 2.6 2.7 U 3.9 4.0 H 2.7 2.8 V 4.0 4.1 J 2.8 2.9 W 4.1 4.2 K 2.9 3.0 X 4.2 4.3 L 3.0 3.1 Y 4.3 4.4 M 3.1 3.2 Z 4.4 4.5 N 3.2 3.3 2003 Sep 26 4 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 MGP229 0 MGP230 60 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) −1 40 −2 −3 20 −4 −5 10−1 1 0 10 ID (A) 0 5 10 15 VGS (V) 20 VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values per section. Fig.5 Drain current as a function of gate-source voltage; typical values per section. MGP231 MGP234 200 1500 handbook, halfpage handbook, halfpage RDSon C (pF) (mΩ) 150 1000 100 500 Cis Cos 50 0 0 50 100 Tj (°C) 150 0 10 VGS = 10 V; ID = 8 A. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature; typical values per section. 2003 Sep 26 5 20 30 VDS (V) 40 Input and output capacitance as functions of drain-source voltage; typical values per section. Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 MGP232 600 handbook, halfpage Crs (pF) 400 200 0 0 10 20 30 VDS (V) 40 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section. APPLICATION INFORMATION FOR CLASS-AB OPERATION Th = 25 °C; Rth mb-h = 0.15 K/W unless otherwise specified. RF performance in CW operation in a common source class-AB circuit. RGS = 536 Ω per section; optimum load impedance per section = 1.34 + j0.34 Ω; VDS = 32 V. MODE OF OPERATION CW, class-AB f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ∆Gp(1) (dB) ηD (%) 225 32 2 × 250 300 >12 >1 >55 typ. 13.5 typ. 0.4 typ. 62 225 28 2 × 250 300 typ. 13 typ. 0.7 typ. 68 225 35 2 × 250 300 typ. 14 typ. 0.2 typ. 60 175 28 2 × 250 300 typ. 15 typ. 0.5 typ. 70 Note 1. Assuming a third order amplitude transfer characteristic, 1 dB compression corresponds with 30% synchronized input/25% synchronized output compression in television service (negative modulation, CCIR system). Ruggedness in class-AB operation The BLF368 is capable of withstanding a load mismatch corresponding to VSWR = 10: 1 through all phases under the following conditions: VDS = 32 V; f = 225 MHz at rated output power. 2003 Sep 26 6 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 MGP239 20 MGP241 80 handbook, halfpage handbook, halfpage Gp (dB) ηD (%) 16 60 12 40 8 20 4 0 0 100 200 300 400 500 PL (W) 0 100 200 300 400 500 PL (W) Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA; ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section); f = 225 MHz. solid line: Th = 25 °C. dotted line: Th = 70 °C. Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA; ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section); f = 225 MHz. solid line: Th = 25 °C. dotted line: Th = 70 °C. Fig.9 Fig.10 Efficiency as a function of load power; typical values per section. Power gain as a function of load power; typical values per section. MGP240 500 handbook, halfpage PL (W) 400 300 200 100 0 0 10 20 PIN (W) 30 Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA; ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section); f = 225 MHz. solid line: Th = 25 °C. dotted line: Th = 70 °C. Fig.11 Load power as a function of input power; typical values per section. 2003 Sep 26 7 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... C16 C12 C17 C8 R7 R2 L12 C18 C9 C13 C6 L13 R3 C25 D.U.T. L1 8 50 Ω input C1 L4 L2 C4 L18 L20 C29 L22 L8 L6 C3 L10 L16 C5 C22 C23 C24 C27 L23 C28 50 Ω output Philips Semiconductors A VDD1 VHF push-pull power MOS transistor handbook, full pagewidth 2003 Sep 26 R1 C2 L3 L7 L5 C30 L9 L11 L21 L24 L14 C7 C10 L19 L17 C26 R4 C14 C19 R5 R8 A L15 C11 C20 IC1 C15 R9 R6 f = 225 MHz. C32 C21 C31 VDD2 MGP211 Fig.12 Test circuit for class-AB operation. BLF368 C34 Product specification VDD1 C33 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 List of components class-AB test circuit (see Figs 12 and 13) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2 multilayer ceramic chip capacitor; note 1 2 × 56 pF in parallel + 18 pF, 500 V C3 film dielectric trimmer 2 to 9 pF C4 multilayer ceramic chip capacitor; note 1 47 pF, 500 V C5 film dielectric trimmer 5 to 60 pF 2222 809 08003 C6, C7, C9, C10, multilayer ceramic chip capacitor; C12, C15, C31, C34 note 1 1 nF, 500 V 2222 852 47104 C8, C11, C16, C21, C32 multilayer ceramic chip capacitor; note 1 100 nF, 50 V C17, C20, C33 electrolytic capacitor 10 µF, 63 V C22 multilayer ceramic chip capacitor; note 1 82 pF, 500 V C23 multilayer ceramic chip capacitor; note 1 10 pF + 30 pF in parallel, 500 V C24, C28 film dielectric trimmer 2 to 18 pF C25, C26 multilayer ceramic chip capacitor; note 1 39 pF + 47 pF in parallel, 500 V C27 multilayer ceramic chip capacitor; note 1 18 pF, 500 V C29, C30 multilayer ceramic chip capacitor; note 1 3 × 100 pF in parallel, 500 V 2222 809 09005 2222 809 09006 L1, L3, L22, L24 stripline; note 2 50 Ω 4.8 × 80 mm L2, L23 semi-rigid cable; note 3 50 Ω ext. conductor length 80 mm ext. dia 3.6 mm L4, L5 stripline; note 2 43 Ω 6 × 32.5 mm L6, L7 stripline; note 2 43 Ω 6 × 10.5 mm L8, L9 stripline; note 2 43 Ω 6 × 3 mm L10, L11 stripline; note 2 43 Ω 6 × 10.5 mm L12, L15 grade 3B Ferroxcube wideband HF choke 2 in parallel L13, L14 2 turns enamelled 1.6 mm copper wire 25 nH space 2.5 mm int. dia. 5 mm leads 2 × 7 mm L16, L17 stripline; notes 2 and 4 43 Ω 6 × 3 mm L18, L19 stripline; notes 2 and 4 43 Ω 6 × 35 mm L20, L21 stripline; notes 2 and 4 43 Ω 6 × 9 mm R1, R6 10 turns potentiometer 50 kΩ R2, R5 metal film resistor 0.4 W, 1 kΩ R3, R4 metal film resistor 0.4 W, 536 Ω 2003 Sep 26 9 4312 020 36642 Philips Semiconductors Product specification VHF push-pull power MOS transistor COMPONENT BLF368 DESCRIPTION VALUE R7, R8 metal film resistor 1 W, ±5%, 10 Ω R9 metal film resistor 1 W, 3.16 kΩ IC1 voltage regulator 78L05 DIMENSIONS CATALOGUE NO. Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines L1, L3 to L11, L16 to L22 and L24 are on a double copper-clad printed circuit board with glass microfibre PTFE dielectric (εr = 2.2); thickness 1⁄16 inch; thickness of copper sheet 2 × 35 µm. 3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24. 4. A copper strap, thickness 0.8 mm, is soldered over the complete striplines L16 to L21 to avoid overheating by large RF currents. 2003 Sep 26 10 Philips Semiconductors Product specification VHF push-pull power MOS transistor handbook, full pagewidth BLF368 130 119 100 IC1 R9 +VDD1 to R1, R6 C31 C32 C16 L12 C17 R7 C34 L1 C12 C13 C18 C33 L2 L12 slider R1 L22 C9 L13 R2 C8 +VDD1 C6 hollow rivet R3 C1 L4 hollow rivets C3 L5 L8 L10 L6 C4 L7 C5 C2 R4 R5 C11 L9 C22 L11 C29 C25 L16 L20 L18 C27 C23 C24 L17 C26 L19 C10 hollow rivets C28 L21 C30 +VDD2 L14 L3 slider R6 C7 L15 L23 L24 R8 C19 copper strap C20 L15 C14 C15 C21 copper strap MGP213 The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Dimensions in mm. Fig.13 Component layout for 225 MHz class-AB test circuit. 2003 Sep 26 11 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 MGP242 2 MGP243 2 handbook, halfpage handbook, halfpage Zi (Ω) 1 ri ZL (Ω) 0 −1 −2 150 RL 1 XL xi 200 f (MHz) 0 150 250 200 f (MHz) 250 Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA; RGS = 536 Ω (per section); PL = 300 W. Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA; RGS = 536 Ω (per section); PL = 300 W. Fig.14 Input impedance as a function of frequency (series components); typical values per section. Fig.15 Load impedance as a function of frequency (series components); typical values per section. MGP244 20 handbook, halfpage Gp (dB) 16 12 8 4 0 150 200 f (MHz) 250 Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA; RGS = 536 Ω (per section); PL = 300 W. Fig.16 Power gain as a function of frequency; typical values per section. 2003 Sep 26 12 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 BLF368 scattering parameters VDS = 28 V; ID = 250 mA; note 1 s11 f (MHz) s21 s12 s22 |s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ 5 0.86 −159.2 21.94 96.8 0.01 −0.8 0.90 169.1 10 0.86 −168.9 11.14 88.5 0.01 21.1 0.85 174.3 20 0.86 −173.4 5.45 79.2 0.01 18.7 0.83 178.2 30 0.86 −174.2 3.53 72.3 0.02 8.7 0.83 −179.8 40 0.87 −174.4 2.54 66.3 0.02 0.3 0.84 −178.0 50 0.88 −174.5 1.94 61.0 0.02 −6.7 0.85 −176.7 60 0.90 −174.7 1.54 56.1 0.01 −12.5 0.86 −175.9 70 0.91 −174.9 1.25 51.8 0.01 −17.4 0.88 −175.4 80 0.92 −175.2 1.04 47.9 0.01 −21.1 0.89 −175.1 90 0.93 −175.5 0.88 44.4 0.01 −24.1 0.90 −175.0 100 0.93 −175.9 0.75 41.0 0.01 −26.6 0.91 −175.1 125 0.95 −176.7 0.53 34.0 0.01 −29.8 0.93 −175.6 150 0.96 −177.6 0.38 29.3 0.01 −28.2 0.94 −175.7 175 0.97 −178.4 0.30 25.8 0.00 −21.2 0.96 −176.1 200 0.97 −179.1 0.23 22.6 0.00 −6.2 0.97 −176.8 250 0.98 179.5 0.16 18.7 0.00 45.7 0.98 −177.7 300 0.99 178.4 0.11 17.1 0.01 70.9 0.99 −178.6 350 0.99 177.3 0.08 16.6 0.01 76.9 0.99 −179.2 400 0.99 176.4 0.07 18.9 0.01 84.9 0.99 −179.9 450 0.99 175.3 0.05 21.7 0.01 87.8 0.99 179.5 500 0.99 174.4 0.05 27.2 0.01 88.4 1.00 178.9 600 0.99 172.6 0.04 37.8 0.02 89.3 1.00 177.8 700 1.00 170.8 0.03 50.9 0.02 90.0 1.00 176.8 800 1.00 169.0 0.03 62.1 0.03 91.1 1.00 175.8 900 1.00 167.1 0.04 71.3 0.03 91.6 1.00 174.9 1000 1.00 165.1 0.04 76.4 0.04 92.3 1.00 173.8 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast 2003 Sep 26 13 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 BLF368 scattering parameters VDS = 32 V; ID = 250 mA; note 1 s11 f (MHz) s21 s12 s22 |s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ 5 0.86 −157.9 23.11 97.5 0.01 −2.1 0.90 168.6 10 0.86 −168.3 11.76 88.9 0.01 20.9 0.84 174.0 20 0.86 −173.1 5.75 79.4 0.01 18.7 0.82 178.1 30 0.86 −174.0 3.73 72.5 0.02 8.8 0.83 −179.7 40 0.87 −174.3 2.68 66.5 0.02 0.5 0.83 −177.9 50 0.88 −174.5 2.05 61.2 0.02 -6.5 0.84 −176.5 60 0.90 −174.6 1.63 56.4 0.01 −12.3 0.86 −175.7 70 0.91 −174.8 1.33 52.1 0.01 −17.1 0.87 −175.2 80 0.92 −175.2 1.10 48.2 0.01 −20.9 0.88 −174.8 90 0.93 −175.5 0.93 44.7 0.01 −23.9 0.89 −174.7 100 0.93 −175.8 0.80 41.4 0.01 −26.3 0.91 −174.8 125 0.95 −176.6 0.56 34.3 0.01 −29.5 0.92 −175.3 150 0.96 −177.5 0.41 29.5 0.01 −27.8 0.94 −175.5 175 0.97 −178.4 0.31 26.0 0.00 −20.8 0.96 −175.9 200 0.97 −179.1 0.25 22.8 0.00 −5.6 0.97 −176.6 250 0.98 179.6 0.16 18.9 0.00 45.9 0.98 −177.5 300 0.99 178.4 0.12 17.0 0.01 71.1 0.98 −178.4 350 0.99 177.3 0.09 16.9 0.01 77.4 0.99 −179.1 400 0.99 176.4 0.07 18.6 0.01 84.9 0.99 −179.8 450 0.99 175.4 0.06 21.2 0.01 87.9 0.99 179.7 500 0.99 174.4 0.05 24.8 0.01 88.5 1.00 179.0 600 0.99 172.6 0.04 36.3 0.02 89.4 1.00 177.9 700 1.00 170.8 0.03 49.2 0.02 90.1 1.00 176.9 800 1.00 169.0 0.03 61.2 0.03 91.2 1.00 175.9 900 1.00 167.1 0.04 70.4 0.03 91.8 1.00 175.0 1000 1.00 165.1 0.04 75.8 0.04 92.5 1.00 173.9 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast 2003 Sep 26 14 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 BLF368 scattering parameters VDS = 35 V; ID = 250 mA; note 1 s11 f (MHz) s21 s12 s22 |s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ 5 0.86 −156.9 23.97 98.1 0.01 −3.2 0.90 168.3 10 0.86 −167.8 12.21 89.2 0.01 20.7 0.84 173.8 20 0.86 −172.9 5.98 79.6 0.01 18.7 0.82 178.1 30 0.86 −173.9 3.88 72.7 0.01 8.9 0.82 −179.7 40 0.87 −174.2 2.79 66.7 0.02 0.6 0.82 −177.8 50 0.89 −174.4 2.13 61.4 0.02 −6.4 0.84 −176.4 60 0.90 −174.6 1.70 56.5 0.01 −12.2 0.85 −175.5 70 0.91 −174.8 1.38 52.2 0.01 −16.9 0.87 −175.0 80 0.92 −175.2 1.15 48.4 0.01 −20.8 0.88 −174.7 90 0.93 −175.5 0.97 44.9 0.01 −23.7 0.89 −174.5 100 0.93 −175.8 0.83 41.5 0.01 −26.0 0.90 −174.6 125 0.95 −176.6 0.58 34.5 0.01 −29.2 0.92 −175.1 150 0.96 −177.5 0.43 29.6 0.01 −27.6 0.94 −175.3 175 0.97 −178.3 0.33 26.1 0.00 −20.4 0.96 −175.7 200 0.97 −179.0 0.26 22.9 0.00 −5.1 0.96 −176.4 250 0.98 179.6 0.17 19.0 0.00 46.5 0.98 −177.3 300 0.99 178.4 0.12 16.9 0.01 71.2 0.98 −178.3 350 0.99 177.3 0.09 16.5 0.01 77.5 0.99 −179.0 400 0.99 176.4 0.07 18.1 0.01 84.9 0.99 −179.7 450 0.99 175.4 0.06 20.5 0.01 87.9 0.99 179.7 500 0.99 174.4 0.05 25.1 0.01 88.5 1.00 179.1 600 0.99 172.6 0.04 35.9 0.02 89.5 1.00 178.0 700 1.00 170.8 0.03 48.8 0.02 90.1 1.00 176.9 800 1.00 169.0 0.04 59.9 0.03 91.2 1.00 176.0 900 1.00 167.1 0.04 69.8 0.03 91.9 1.00 175.0 1000 1.00 165.1 0.04 75.8 0.04 92.6 1.00 173.9 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast 2003 Sep 26 15 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A1 D A F D1 U1 B q C w2 M C M H1 1 H c 2 p U2 E1 E 5 A 3 w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 5.77 5.00 5.85 5.58 0.16 0.10 inches D D1 e E E1 22.17 21.98 10.27 10.29 11.05 21.46 21.71 10.05 10.03 F H 1.78 1.52 H1 21.08 17.02 19.56 16.51 p Q q U1 U2 w1 w2 w3 3.28 3.02 2.85 2.59 27.94 34.17 33.90 9.91 9.65 0.25 0.51 0.25 0.227 0.230 0.006 0.873 0.865 0.404 0.405 0.070 0.830 0.670 0.129 0.112 1.345 0.390 1.100 0.010 0.020 0.010 0.435 0.197 0.220 0.004 0.845 0.855 0.396 0.396 0.060 0.770 0.650 0.119 0.102 1.335 0.380 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-03-29 SOT262A1 2003 Sep 26 EUROPEAN PROJECTION 16 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Sep 26 17 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/04/pp18 Date of release: 2003 Sep 26 Document order number: 9397 750 11602