BLF2043F,112

BLF2043F UHF power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.ampleon.com http://www.semiconductors.philips.com use http://www.ampleon.com (Internet) sales.addresses@www.semiconductors.philips.com use http://www.ampleon.com/sales The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © Ampleon B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office (details via http://www.ampleon.com/sales). Thank you for your cooperation and understanding, Ampleon Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043F FEATURES PINNING - SOT467C • High power gain PIN DESCRIPTION • Easy power control 1 drain • Excellent ruggedness 2 gate • Source on mounting base eliminates DC isolators, reducing common mode inductance 3 source, connected to flange • Designed for broadband operation (HF to 2.2 GHz). 1 APPLICATIONS • Communication transmitter applications in the UHF frequency range. 3 2 DESCRIPTION Top view Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. MBK584 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. f (MHz) MODE OF OPERATION CW, class-AB (2-tone) f1 = 2200; f2 = 2200.1 VDS (V) PL (W) Gp (dB) ηD (%) dim (dBc) 26 10 (PEP) >11 >30 ≤−26 MIN. MAX. UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VDS drain-source voltage − 65 V VGS gate-source voltage − ±15 V ID drain current (DC) − 2.2 A Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2002 Mar 05 2 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043F THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink VALUE UNIT 5 K/W 0.5 K/W Tmb = 25 °C; note 1 Note 1. Thermal resistance is determined under RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 0.2 mA 75 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 20 mA 4 − 5 V IDSS drain-source leakage current VGS = 0; VDS = 26 V − − 1.5 µA IDSX on-state drain current VGS = VGSth + 9 V; VDS = 10 V 2.8 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 40 nA gfs forward transconductance VDS = 10 V; ID = 0.75 A − 0.5 − S RDSon drain-source on-state resistance VGS = 10 V; ID = 0.75 A − 1.2 − Ω Cis input capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 13 − pF Cos output capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 11 − pF Crs feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 0.5 − pF MGW642 102 handbook, halfpage C (pF) Cos Cis 10 Crs 1 10 −1 0 10 20 VDS (V) 30 VGS = 0; f = 1 MHz. Fig.2 Input, output and feedback capacitance as functions of drain-source voltage, typical values. 2002 Mar 05 3 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043F APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.4 K/W; unless otherwise specified. f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) dim (dBc) f1 = 2200; f2 = 2200.1 26 85 10 (PEP) >11 >30 ≤−26 MODE OF OPERATION CW, class-AB (2-tone) Ruggedness in class-AB operation The BLF2043F is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 2200 MHz at rated load power. MGW643 15 handbook, halfpage 0 handbook, halfpage d im (dBc) ηD Gp Gp MGW644 60 (dB) (%) −20 d3 40 10 ηD d5 −40 d7 20 5 −60 0 0 4 8 12 PL (PEP) (W) −80 0 16 0 4 8 VDS = 26 V; IDQ = 85 mA; f1 = 2000 MHz; f2 = 2000.1 MHz. VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. Fig.3 Fig.4 Power gain and efficiency as functions of peak envelope load power, typical values. 2002 Mar 05 4 12 PL (PEP) (W) 16 Intermodulation distortion as a function of peak envelope load power; typical values. Philips Semiconductors Product specification UHF power LDMOS transistor MGW645 15 handbook, halfpage Gp BLF2043F 0 handbook, halfpage d im (dBc) ηD Gp (dB) MGW646 60 (%) −20 d3 40 10 ηD d5 −40 d7 20 5 −60 0 0 4 8 12 PL (PEP) (W) −80 0 16 0 4 8 VDS = 26 V; IDQ = 85 mA; f1 = 2200 MHz; f2 = 2200.1 MHz. VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C; f1 = 2200 MHz; f2 = 2200.1 MHz. Fig.5 Fig.6 Power gain and efficiency as functions of peak envelope load power, typical values. MGW647 0 handbook, halfpage d3 (dBc) −20 −40 (1) (2) (3) −60 0 4 8 12 PL (PEP) (W) 16 VDS = 26 V; Th ≤ 25 °C; f1 = 2200 MHz; f2 = 2200.1 MHz. (1) IDQ = 115 mA. Fig.7 (2) IDQ = 55 mA. (3) IDQ = 85 mA. Intermodulation distortion as a function of peak envelope load power; typical values. 2002 Mar 05 5 12 PL (PEP) (W) 16 Intermodulation distortion as a function of peak envelope load power; typical values. Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043F MGW648 MGW649 8 6 handbook, halfpage handbook, halfpage ZL Zi (Ω) (Ω) 4 RL 6 2 4 0 xi XL −2 2 −4 ri 0 1.8 1.9 2.0 2.1 −6 1.8 2.2 1.9 2.0 2.1 f (GHz) 2.2 f (GHz) VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C. Impedance measured at reference planes. VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C. Impedance measured at reference planes. Fig.8 Fig.9 Input impedance as a function of frequency (series components); typical values. Load impedance as a function of frequency (series components); typical values. VDD handbook, full pagewidth C18 C19 C20 C13 C14 C15 L10 C11 Vgate C12 C6 C5 R1 50 Ω input L9 C1 L6 L1 L2 L3 L4 C3 C10 C8 C2 50 Ω output L7 L8 L5 C4 C7 C9 MGW650 Fig.10 Class-AB test circuit for 2.2 GHz. 2002 Mar 05 6 C16 C17 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043F List of components (see Figs 10 and 11) COMPONENT DESCRIPTION VALUE C1, C2, C10, C11 multilayer ceramic chip capacitor; note 1 6.8 pF C3, C4, C7, C9 Tekelec variable capacitor; type 37271 DIMENSIONS CATALOGUE NO. 0.6 to 4.5 pF C5 multilayer ceramic chip capacitor; note 1 2.4 pF C6, C18 tantalum SMD capacitor C8 multilayer ceramic chip capacitor; note 1 1.5 pF C12, C20 multilayer ceramic chip capacitor; note 2 1 nF C13 multilayer ceramic chip capacitor; note 1 10 pF C14 multilayer ceramic chip capacitor; note 1 51 pF C15 multilayer ceramic chip capacitor; note 1 120 pF C16 multilayer ceramic chip capacitor 100 nF 2222 581 16641 C17 electrolytic capacitor 47 µF; 35 V 2222 036 90094 C19 electrolytic capacitor 100 µF; 63 V 2222 037 58101 L1, L8 stripline; note 3 50 Ω 4 × 1.5 mm L2 stripline; note 3 50 Ω 7 × 1.5 mm L3 stripline; note 3 58.1 Ω 12 × 1.2 mm L4 stripline; note 3 11.3 Ω 9 × 10 mm L5 stripline; note 3 11.3 Ω 11.5 × 10 mm L6 stripline; note 3 52.8 Ω 11 × 1.4 mm L7 stripline; note 3 50 Ω 5.5 × 1.5 mm L9 stripline; note 3 64.7 Ω 38 × 1 mm L10 2 turns enamelled 0.5 mm copper wire R1 metal film resistor 10 µF; 35 V int. dia. = 3 mm; length = 3 mm 390 Ω; 0.6 W 2322 156 11009 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board with Rogers 5880 dielectric (εr = 2.2); thickness 0.51 mm. 2002 Mar 05 7 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043F handbook, full pagewidth C18 C13 C14 C15 C16 C20 C17 C19 VDD L10 C11 C12 C6 Vgate C5 R3 C1 C8 C2 C10 C9 C3 C7 C4 BLF2043F 2.2 GHz input BLF2043F 2.2 GHz output 60 60 BLF2043F 2.2 GHz input BLF2043F 2.2 GHz output 33 33 MGU555 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.51 mm. The other side is unetched and serves as a ground plane. Fig.11 Component layout for 2.2 GHz class-AB test circuit. 2002 Mar 05 8 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043F PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C D A F 3 D1 U1 B q c C 1 E1 H U2 E A w1 M A M B M p 2 Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H p Q q U1 U2 w1 w2 mm 4.67 3.94 5.59 5.33 0.15 0.10 9.25 9.04 9.27 9.02 5.92 5.77 5.97 5.72 1.65 1.40 18.54 17.02 3.43 3.18 2.21 1.96 14.27 20.45 20.19 5.97 5.72 0.25 0.51 inch 0.184 0.220 0.006 0.155 0.210 0.004 0.364 0.365 0.356 0.355 0.233 0.227 0.235 0.065 0.225 0.055 0.73 0.67 0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-12-06 99-12-28 SOT467C 2002 Mar 05 EUROPEAN PROJECTION 9 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043F DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Mar 05 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043F NOTES 2002 Mar 05 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/02/pp12 Date of release: 2002 Mar 05 Document order number: 9397 750 09171