BLF244,112

BLF244 VHF power MOS transistor Rev. 4 — 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.ampleon.com http://www.semiconductors.philips.com use http://www.ampleon.com (Internet) sales.addresses@www.semiconductors.philips.com use http://www.ampleon.com/sales The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © Ampleon B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office (details via http://www.ampleon.com/sales). Thank you for your cooperation and understanding, Ampleon Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF244 PIN CONFIGURATION • High power gain • Low noise figure handbook, halfpage • Easy power control 1 4 • Good thermal stability d • Withstands full load mismatch • Gold metallization ensures excellent reliability. g MBB072 2 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. s 3 MSB057 Fig.1 Simplified outline and symbol. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. WARNING PINNING - SOT123A PIN DESCRIPTION 1 drain 2 source 3 gate 4 source Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-B 2003 Oct 13 f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 175 28 15 >13 >50 2 Philips Semiconductors Product specification VHF power MOS transistor BLF244 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage − ±20 V ID drain current (DC) − 3 A Ptot total power dissipation − 38 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C Tmb ≤ 25 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base Tmb = 25 °C; Ptot = 38 W 4.6 K/W Rth mb-h thermal resistance from mounting base to heatsink Tmb = 25 °C; Ptot = 38 W 0.3 K/W MRA919 10 MGP151 50 handbook, halfpage handbook, halfpage Ptot (W) 40 ID (A) (1) 30 (1) (2) (2) 1 20 10 10−1 1 10 VDS (V) 0 102 0 (1) Current is this area may be limited by RDSon. (2) Tmb = 25 °C. 100 Th (°C) (1) Short-time operation during mismatch. (2) Continuous operation. Fig.2 DC SOAR. 2003 Oct 13 50 Fig.3 Power derating curves. 3 150 Philips Semiconductors Product specification VHF power MOS transistor BLF244 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 5 mA 65 − − V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 1 mA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage ID = 5 mA; VDS = 10 V 2 − 4.5 V ∆VGS gate-source voltage difference of matched devices ID = 5 mA; VDS = 10 V − − 100 mV gfs forward transconductance ID = 0.75 A; VDS = 10 V 0.6 − − S RDSon drain-source on-state resistance ID = 0.75 A; VGS = 10 V − 0.8 1.5 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 5 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 60 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 40 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 4.5 − pF F noise figure; see Fig.13 ID = 0.5 A; VDS = 28 V; R1 = 23 Ω; Th = 25 °C; f = 175 MHz; Rth mb-h = 0.3 K/W − 4.3 − dB VGS group indicator LIMITS (V) GROUP LIMITS (V) GROUP MIN. MAX. A 2.0 2.1 MIN. MAX. O 3.3 3.4 B 2.1 2.2 P 3.4 3.5 C 2.2 2.3 Q 3.5 3.6 D 2.3 2.4 R 3.6 3.7 E 2.4 2.5 S 3.7 3.8 F 2.5 2.6 T 3.8 3.9 G 2.6 2.7 U 3.9 4.0 H 2.7 2.8 V 4.0 4.1 J 2.8 2.9 W 4.1 4.2 K 2.9 3.0 X 4.2 4.3 L 3.0 3.1 Y 4.3 4.4 Z 4.4 4.5 M 3.1 3.2 N 3.2 3.3 2003 Oct 13 4 Philips Semiconductors Product specification VHF power MOS transistor BLF244 MGP152 MGP153 6 2 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) 0 4 −2 −4 2 −6 −8 0 1 102 10 ID (mA) 0 103 Temperature coefficient of gate-source voltage as a function of drain current, typical values. Fig.5 MGP154 2 8 12 VGS (V) 16 VDS = 10 V. solid line: Tj = 25 °C. dotted line: Tj = 125 °C. VDS = 10 V; valid for Tj = 25 to 125 °C. Fig.4 4 Drain current as a function of gate-source voltage, typical values. MGP155 160 handbook, halfpage handbook, halfpage C (pF) RDS(on) (Ω) 120 1 80 Cis Cos 40 0 0 0 40 80 120 Tj (°C) 160 0 10 20 30 VDS (V) 40 VGS = 10 V; ID = 0.75 A. VGS = 0; f = 1 MHz. Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. 2003 Oct 13 Fig.7 5 Input and output capacitance as functions of drain-source voltage, typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF244 MGP156 20 handbook, halfpage Crs (pF) 10 0 0 20 40 VDS (V) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 3 K/W; unless otherwise specified. RF performance in CW operation in a common source class-B circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) 175 28 25 175 12.5 25 GP (dB) ηD (%) 15 >13 typ. 17 >50 typ. 65 3.0 − j4.0 6.3 + j9.8 46.4//46.4 6 typ. 15 typ. 60 3.0 − j4.0 4.5 + j3.3 100 IDQ PL (mA) (W) Zi (Ω)(1) ZL (Ω) R1 (Ω) Note 1. R1 included. Ruggedness in class-B operation The BLF244 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: Th = 25 °C; Rth mb-h = 0.3 K/W; at rated load power. 2003 Oct 13 6 Philips Semiconductors Product specification VHF power MOS transistor BLF244 MGP157 30 MGP158 20 handbook, halfpage handbook, halfpage PL (W) Gp (dB) Gp 100 ηD (%) ηD 10 20 50 0 10 0 1 PIN (W) 2 0 10 20 PL (W) 0 30 Class-B operation; VDS = 28 V; IDQ = 25 mA; f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W. Class-B operation; VDS = 28 V; IDQ = 25 mA; f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W. Fig.9 Fig.10 Power gain and efficiency as functions of load power; typical values. Load power as a function of input power; typical values. MGP159 20 MGP160 20 handbook, halfpage handbook, halfpage (dB) PL (W) 16 10 12 Gp 80 ηD 60 8 40 4 0 0 1 PIN (W) 2 100 ηD (%) Gp 0 4 8 12 PL (W) 20 16 Class-B operation; VDS = 12.5 V; IDQ = 25 mA; f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W. Class-B operation; VDS = 12.5 V; IDQ = 25 mA; f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W. Fig.11 Load power as a function of input power; typical values. Fig.12 Power gain and efficiency as functions of load power; typical values. 2003 Oct 13 7 Philips Semiconductors Product specification VHF power MOS transistor BLF244 +VG handbook, full pagewidth R3 C14 L6 +VD R2 C6 C13 C7 L5 C2 50 Ω input C1 R1 C5 L1 D.U.T. L2 L4 C8 L7 L8 L3 C9 C3 C11 C12 50 Ω output C10 C4 MGP161 f = 175 MHz. Fig.13 Test circuit for class-B operation. 2003 Oct 13 8 Philips Semiconductors Product specification VHF power MOS transistor BLF244 List of components (see Fig.13) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C12 multilayer ceramic chip capacitor; note 1 680 nF C2 multilayer ceramic chip capacitor; note 1 20 pF C3, C4, C9 film dielectric trimmer 5 to 60 pF C5 multilayer ceramic chip capacitor; note 1 75 pF C6 multilayer ceramic chip capacitor 10 nF C7 multilayer ceramic chip capacitor; note 1 100 pF C8 multilayer ceramic chip capacitor; note 1 47 pF C10, C11 multilayer ceramic chip capacitor; note 1 11 pF C13 solid tantalum capacitor 2.2 µF C14 multilayer ceramic chip capacitor 100 nF L1 4 turns enamelled 1 mm copper wire 32 nH length 6.3 mm int. dia. 3 mm leads 2 × 5 mm L2 1 turn enamelled 1 mm copper wire 12.2 nH int. dia. 5.6 mm leads 2 × 5 mm L3, L4 stripline; note 2 30 Ω 15 × 6 mm L5 6 turns enamelled 1 mm copper wire 119 nH length 10.4 mm int. dia. 6 mm leads 2 × 5 mm L6 grade 3B Ferroxcube RF choke L7 2 turns enamelled 1 mm copper wire 19 nH length 2.4 mm int. dia. 3 mm leads 2 × 5 mm L8 4 turns enamelled 1 mm copper wire 28.5 nH length 8.5 mm int. dia. 3 mm leads 2 × 5 mm R1 metal film resistor; note 3 R2 0.4 W metal film resistor 1 MΩ R3 0.4 W metal film resistor 10 Ω CATALOGUE NO. 2222 809 08003 2222 852 47103 2222 852 47104 4312 020 36640 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (εr = 4.5), thickness 1⁄16 inch. 3. Refer to Application Information for value. 2003 Oct 13 9 Philips Semiconductors Product specification VHF power MOS transistor BLF244 150 handbook, full pagewidth strap rivet 70 strap L6 C13 +VG C2 C1 L1 C5 L2 +VD C7 C14 R2 C6 R3 L5 R1 L7 L3 C8 L8 C11 C12 L4 C10 C3 C9 C4 MGP162 Dimensions in mm. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being unetched copper to serve as ground plane. Earth connections are made by fixing screws, copper straps and hollow rivets under the sources and around the edges to provide a direct contact between the copper on the component side and the ground plane. Fig.14 Component layout for 175 MHz class-B test circuit. 2003 Oct 13 10 Philips Semiconductors Product specification VHF power MOS transistor BLF244 MGP164 60 MGP165 25 handbook, halfpage handbook, halfpage Zi ZL (Ω) 20 (Ω) RL 40 15 xi 10 20 XL 5 ri 0 20 40 60 80 0 20 100 120 f (MHz) 40 60 80 100 120 f (MHz) Class-B operation; VDS = 28 V; IDQ = 25 mA; PL = 15 W; Th = 25 °C; Rth mb-h = 0.3 K/W. Class-B operation; VDS = 28 V; IDQ = 25 mA; PL = 15 W; Th = 25 °C; Rth mb-h = 0.3 K/W. Fig.15 Input impedance as a function of frequency (series components); typical values. Fig.16 Load impedance as a function of frequency (series components); typical values. MGP166 40 handbook, halfpage Gp (dB) 36 32 28 24 20 20 40 60 80 100 120 f (MHz) Class-B operation; VDS = 28 V; IDQ = 25 mA; PL = 15 W; Th = 25 °C; Rth mb-h = 0.3 K/W. Fig.17 Power gain as function of frequency; typical values. 2003 Oct 13 11 Philips Semiconductors Product specification VHF power MOS transistor BLF244 BLF244 scattering parameters VDS = 12.5 V; ID = 25 mA; note 1 s11 f (MHz) s21 s12 s22 |s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ 5 0.98 −18.6 15.11 165.1 0.02 75.8 0.98 −18.9 10 0.93 −35.0 14.06 152.3 0.04 63.1 0.95 −36.5 20 0.84 −63.4 11.55 130.0 0.06 42.1 0.86 −65.1 30 0.77 −83.3 9.20 114.5 0.07 27.3 0.80 −85.7 40 0.73 −97.6 7.41 102.8 0.07 16.5 0.76 −99.8 50 0.72 −107.9 6.09 93.7 0.07 8.5 0.74 −109.8 60 0.71 −115.7 5.09 86.2 0.07 2.0 0.74 −117.3 70 0.72 −121.4 4.32 80.1 0.07 −3.1 0.74 −123.1 80 0.72 −126.0 3.72 74.8 0.07 −7.2 0.75 −127.8 90 0.74 −130.0 3.26 70.1 0.006 −10.9 0.76 −131.9 100 0.75 −133.8 2.88 65.6 0.06 −14.3 0.78 −135.4 125 0.78 −142.0 2.16 55.5 0.05 −20.6 0.81 −142.4 150 0.81 −147.9 1.66 48.1 0.04 −22.9 0.84 −147.8 175 0.85 −152.7 1.33 42.2 0.03 −21.0 0.86 −152.4 200 0.87 −157.6 1.09 36.7 0.02 −12.8 0.88 −156.4 250 0.90 −165.1 0.75 28.8 0.01 46.1 0.92 −162.9 300 0.92 −171.5 0.56 23.8 0.03 80.9 0.94 −168.1 350 0.94 −176.8 0.42 21.4 0.04 88.3 0.95 −172.4 400 0.94 178.3 0.34 20.8 0.06 89.0 0.96 −176.2 450 0.95 174.0 0.28 21.9 0.07 88.8 0.96 −179.6 500 0.95 169.9 0.24 24.8 0.09 86.9 0.96 177.3 600 0.95 162.4 0.19 33.8 0.12 83.5 0.97 171.8 700 0.94 155.4 0.18 42.8 0.14 79.9 0.96 166.8 800 0.94 148.6 0.19 50.1 0.17 77.1 0.96 162.1 900 0.93 142.0 0.21 54.4 0.19 71.6 0.94 157.9 1000 0.92 135.5 0.23 59.6 0.22 73.5 0.93 162.9 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast. 2003 Oct 13 12 Philips Semiconductors Product specification VHF power MOS transistor BLF244 BLF244 scattering parameters VDS = 28 V; ID = 25 mA; note 1 s11 f (MHz) s21 s12 s22 |s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ 5 0.99 −15.9 15.62 167.8 0.01 78.5 0.98 −13.8 10 0.96 −30.1 14.85 157.2 0.03 68.0 0.96 −27.1 20 0.89 −56.5 12.92 137.3 0.04 49.3 0.88 −50.1 30 0.83 −76.5 10.79 122.3 0.06 35.1 0.81 −68.2 40 0.79 −91.7 8.98 110.5 0.06 24.1 0.76 −81.7 50 0.77 −103.1 7.55 101.1 0.06 15.8 0.73 −91.9 60 0.76 −111.8 6.40 93.4 0.06 9.1 0.72 −99.9 70 0.75 −118.3 5.50 87.1 0.06 3.8 0.72 −106.4 80 0.76 −123.5 4.79 81.7 0.06 −0.5 0.72 −111.8 90 0.76 −127.9 4.24 76.8 0.06 −4.3 0.73 −116.6 100 0.77 −132.0 3.77 72.2 0.06 −7.7 0.74 −120.8 125 0.79 −140.7 2.88 61.9 0.05 −14.3 0.77 −129.3 150 0.82 −146.7 2.24 54.2 0.04 −16.8 0.80 −135.8 175 0.85 −151.6 1.82 47.9 0.03 −15.2 0.83 −141.4 200 0.87 −156.5 1.50 42.0 0.02 −7.5 0.85 −146.3 250 0.89 −164.0 1.04 33.2 0.01 48.5 0.89 −154.2 300 0.92 −170.5 0.78 27.0 0.03 83.8 0.92 −160.5 350 0.93 −175.8 0.59 23.1 0.04 91.3 0.93 −165.7 400 0.94 179.1 0.47 20.9 0.06 91.9 0.95 −170.1 450 0.95 174.8 0.38 20.0 0.07 91.5 0.95 −174.1 500 0.94 170.7 0.32 20.8 0.09 89.4 0.96 −177.6 600 0.94 163.1 0.25 26.1 0.12 85.7 0.96 176.1 700 0.94 156.0 0.22 33.7 0.14 81.9 0.96 170.6 800 0.93 149.2 0.21 41.9 0.17 78.9 0.96 165.5 900 0.93 142.5 0.22 47.9 0.19 73.1 0.94 160.9 1000 0.92 136.1 0.23 57.3 0.17 75.3 0.93 165.9 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast. 2003 Oct 13 13 Philips Semiconductors Product specification VHF power MOS transistor BLF244 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT123A D A F D1 q C B U1 w2 M C M c H b 4 3 α A U2 p U3 w1 M A M B M 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 F H p Q q U1 U2 U3 w1 w2 mm 7.47 6.37 5.82 5.56 0.18 0.10 9.73 9.47 9.78 9.42 2.72 2.31 20.71 19.93 3.33 3.04 4.63 4.11 18.42 24.87 24.64 6.48 6.22 9.78 9.39 0.25 0.51 inches 0.294 0.251 0.229 0.007 0.219 0.004 0.383 0.385 0.107 0.815 0.373 0.371 0.091 0.785 0.131 0.120 0.182 0.980 0.725 0.162 0.970 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION 45° ISSUE DATE 99-03-29 SOT123A 2003 Oct 13 0.255 0.385 0.010 0.020 0.245 0.370 α 14 Philips Semiconductors Product specification VHF power MOS transistor BLF244 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Oct 13 15 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/03/pp16 Date of release: 2003 Oct 13 Document order number: 9397 750 11584