BLF346,112

BLF346 VHF power MOS transistor Rev. 6 — 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.ampleon.com http://www.semiconductors.philips.com use http://www.ampleon.com (Internet) sales.addresses@www.semiconductors.philips.com use http://www.ampleon.com/sales The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © Ampleon B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office (details via http://www.ampleon.com/sales). Thank you for your cooperation and understanding, Ampleon Philips Semiconductors Product specification VHF power MOS transistor BLF346 FEATURES PINNING - SOT119A • High power gain PIN DESCRIPTION • Easy power control 1 source • Good thermal stability 2 source • Gold metallization ensures excellent reliability. 3 gate 4 drain APPLICATIONS 5 source • Linear amplifier applications in television transmitters and transposers. 6 source DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119A flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General Section of the associated Data Handbook for further information. handbook, halfpage 1 2 3 4 5 6 d g s CAUTION MAM268 This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance in a linear amplifier. MODE OF OPERATION f (MHz) VDS (V) ID (A) Class-A 224.25 28 3 Th (°C) PL (W) Gp (dB) dim (dB) (1) 70 >24 >14 −52 25 typ. 30 typ. 16.5 −52 Note 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak synchronization level. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2003 Sep 26 2 Philips Semiconductors Product specification VHF power MOS transistor BLF346 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage − ±20 V ID drain current (DC) Ptot total power dissipation Tstg Tj − 13 A − 130 W storage temperature −65 +150 °C junction temperature − 200 °C Tmb ≤ 25 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base Tmb = 25 °C; Ptot = 130 W 1.35 K/W Rth mb-h thermal resistance from mounting base to heatsink Tmb = 25 °C; Ptot = 130 W 0.2 K/W MRA931 50 MGG104 200 handbook, halfpage handbook, halfpage Ptot ID (A) (W) 150 10 (1) (2) (2) 100 (1) 1 50 10−1 1 10 VDS (V) 0 102 0 (1) Current is this area may be limited by RDSon. (2) Tmb = 25 °C. 100 Th (°C) (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. 2003 Sep 26 50 Fig.3 Power derating curves. 3 150 Philips Semiconductors Product specification VHF power MOS transistor BLF346 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 50 mA 65 − − V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 2.5 mA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage VDS = 10 V; ID = 50 mA 2 − 4.5 V ∆VGS gate-source voltage difference of matched pairs VDS = 10 V; ID = 50 mA − − 100 mV gfs forward transconductance VDS = 10 V; ID = 5 A 3 4.2 − S RDSon drain-source on-state resistance VGS = 10 V; ID = 5 A − 0.2 0.3 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 22 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 225 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 180 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 25 − pF VGS group indicator LIMITS (V) GROUP LIMITS (V) GROUP MIN. MAX. MIN. MAX. A 2.0 2.1 O 3.3 3.4 B 2.1 2.2 P 3.4 3.5 C D 2.2 2.3 Q 3.5 3.6 2.3 2.4 R 3.6 3.7 E 2.4 2.5 S 3.7 3.8 F 2.5 2.6 T 3.8 3.9 G 2.6 2.7 U 3.9 4.0 H 2.7 2.8 V 4.0 4.1 J 2.8 2.9 W 4.1 4.2 K 2.9 3.0 X 4.2 4.3 L 3.0 3.1 Y 4.3 4.4 M 3.1 3.2 Z 4.4 4.5 N 3.2 3.3 2003 Sep 26 4 Philips Semiconductors Product specification VHF power MOS transistor BLF346 MGG105 2 MGG106 40 handbook, halfpage handbook, halfpage ID (A) T.C. (mV/K) 0 30 −2 20 −4 10 −6 10−2 10−1 1 ID (A) 0 10 0 5 10 15 20 VGS (V) VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. Fig.5 MGG107 340 Drain current as a function of gate-source voltage; typical values. MRA930 800 handbook, halfpage C (pF) RDS on (mΩ) 600 C os 280 400 C is 220 200 0 160 0 30 60 90 0 120 150 Tj (°C) 10 20 30 40 VDS (V) ID = 5 A; VGS = 10 V. VGS = 0; f = 1 MHz. Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values. 2003 Sep 26 Fig.7 5 Input and output capacitance as functions of drain-source voltage; typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF346 MGG108 300 handbook, halfpage Crs (pF) 200 100 0 0 10 20 30 40 VDS (V) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION RF performance in a linear amplifier (common source class-A circuit). Rth mb-h = 0.2 K/W; ZL = 1.1 + j0.2 Ω unless otherwise specified. MODE OF OPERATION Class-A f (MHz) 224.25 VDS (V) 28 ID (A) 3 Th (°C) Po sync (W) Gp (dB) dim (dB) (1) 70 >24 >14 −52 25 typ. 30 typ. 16.5 −52 70 typ. 20 typ. 14.5 −55 25 typ. 22 typ. 15 −55 Note 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak synchronization level. Ruggedness in class-A operation The BLF346 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: VDS = 28 V; f = 225 MHz at rated output power. 2003 Sep 26 6 Philips Semiconductors Product specification VHF power MOS transistor BLF346 MGG109 −50 handbook, halfpage dim (dB) −55 (1) (2) −60 −65 −70 0 10 20 30 Po sync (W) 40 (1) Th = 70 °C. (2) Th = 25 °C. Fig.9 Intermodulation distortion as a function of peak synchronized output power. handbook, full pagewidth C10 C2 50 Ω input C1 C4 L4 DUT C14 L7 C3 C15 C5 L5 C8 R1 R5 C6 C9 C12 R2 C7 L6 C13 R4 VB R3 VDS MGG113 Fig.10 Test circuit for class-A operation at f = 225 MHz. 2003 Sep 26 50 Ω output BLF346 C11 L1 C16 L3 L2 7 L8 Philips Semiconductors Product specification VHF power MOS transistor BLF346 List of components (see Figs 10 and 11). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 film dielectric trimmer 2 to 18 pF C2 multilayer ceramic chip capacitor; note 1 10 pF, 500 V 2222 809 09003 C3, C15, C16 film dielectric trimmer 4 to 40 pF C4, C5 multilayer ceramic chip capacitor; note 1 56 pF, 500 V C6, C12 multilayer ceramic chip capacitor; note 1 680 pF, 500 V C7, C8, C9 multilayer ceramic chip capacitor 100 nF, 50 V C10, C11 multilayer ceramic chip capacitor; note 1 43 pF, 500 V C13 electrolytic capacitor 10 µF, 63 V C14 multilayer ceramic chip capacitor; note 1 27 pF, 500 V L1 4 turns enamelled 0.7 mm copper wire 42.4 nH length 4 mm; int. dia. 3 mm; leads 2 × 5 mm L2 stripline; note 2 50 Ω length 49 mm; width 2.8 mm L3, L4 stripline; note 2 31 Ω length 11.5 mm; width 6 mm L5 2 turns enamelled 1.5 mm copper wire 18.7 nH length 8 mm; int. dia. 4 mm; leads 2 × 5 mm L6 grade 3B Ferroxcube RF choke L7 stripline; note 2 31 Ω length 40 mm; width 6 mm L8 3 turns enamelled 1.5 mm copper wire 28.8 nH length 8 mm; int. dia. 4 mm; leads 2 × 5 mm R1 metal film resistor 1 kΩ, 0.4 W 2322 151 71002 R2 metal film resistor 100 kΩ, 0.4 W 2322 151 71004 R3 10 turns cermet potentiometer 100 Ω R4 metal film resistor 316 kΩ, 0.4 W 2322 153 53161 R5 metal film resistor 10 Ω, 0.4 W 2322 153 51009 2222 809 08002 2222 852 47104 2222 030 38109 4312 020 36642 Notes 1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed-circuit board with epoxy fibre-glass dielectric (εr = 4.5); thickness 1⁄ inch. 16 2003 Sep 26 8 Philips Semiconductors Product specification VHF power MOS transistor BLF346 150 handbook, full pagewidth strap strap rivet rivet rivet rivet rivet rivet rivet 70 rivet strap strap mounting screws (8×) +VDS R3 L6 C7 C1 L1 R5 R2 C6 R1 L5 L2 C16 C8 C9 C10 C4 C2 C13 C12 L7 L4 L3 C5 C14 L8 C11 C15 C3 MGG114 Dimensions in mm. The circuit and components are situated on one side of the printed-circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets. Fig.11 Component layout for 225 MHz class-A test circuit. 2003 Sep 26 9 Philips Semiconductors Product specification VHF power MOS transistor BLF346 MGG110 MGG111 4 2 handbook, halfpage handbook, halfpage Zi (Ω) ri 2 ZL (Ω) RL 0 1 −2 XL xi −4 −6 160 180 200 220 0 160 240 180 200 220 240 f (MHz) f (MHz) Class-A operation; VDS = 28 V; ID = 3 A; PL = 30 W; Th = 70 °C. Class-A operation; VDS = 28 V; ID = 3 A; PL = 30 W; Th = 70 °C. Fig.12 Input impedance as a function of frequency (series components); typical values. Fig.13 Load impedance as a function of frequency (series components); typical values. MGG112 20 handbook, halfpage Gp (dB) 16 handbook, halfpage 12 8 Zi ZL MBA379 4 0 160 180 200 220 240 f (MHz) Class-A operation; VDS = 28 V; ID = 3 A; PL = 30 W; Th = 70 °C. Fig.15 Power gain as a function of frequency; typical values. Fig.14 Definition of MOS impedance. 2003 Sep 26 10 Philips Semiconductors Product specification VHF power MOS transistor BLF346 BLF346 scattering parameters VDS = 28 V; ID = 3000 mA; note 1. s11 f (MHz) s21 s12 s22 |s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ 100 0.91 −178.9 2.12 67.7 0.01 −0.6 0.88 −177.3 105 0.91 −179.0 2.01 66.6 0.01 −0.4 0.88 −177.4 110 0.92 −179.1 1.91 65.5 0.01 −0.1 0.88 −177.4 115 0.92 −179.2 1.81 64.5 0.01 0.2 0.88 −177.4 120 0.92 −179.3 1.72 63.5 0.01 0.5 0.89 −177.4 130 0.92 −179.5 1.56 61.5 0.01 1.3 0.89 −177.5 140 0.92 −179.7 1.43 59.6 0.01 2.5 0.89 −177.5 150 0.93 −179.9 1.31 58.0 0.01 4.1 0.90 −177.6 160 0.93 180.0 1.21 56.3 0.01 6.0 0.90 −177.7 170 0.93 179.8 1.12 54.7 0.01 8.2 0.90 −177.8 180 0.93 179.5 1.04 53.0 0.01 10.5 0.91 −177.9 190 0.93 179.3 0.97 51.2 0.01 13.0 0.91 −178.0 200 0.94 179.1 0.91 49.6 0.01 15.7 0.91 −178.1 225 0.94 178.5 0.77 46.1 0.01 23.9 0.92 −178.5 250 0.95 178.0 0.66 43.3 0.01 33.6 0.93 −178.9 275 0.95 177.4 0.58 40.1 0.01 43.6 0.94 −179.3 300 0.95 176.7 0.50 37.5 0.01 51.8 0.94 −179.7 350 0.96 175.5 0.40 33.5 0.01 65.7 0.95 179.4 400 0.97 174.8 0.32 30.6 0.01 74.5 0.96 178.4 450 0.97 173.6 0.27 27.7 0.01 80.0 0.97 177.4 500 0.98 172.5 0.22 25.8 0.02 83.0 0.97 176.4 600 0.99 170.3 0.16 24.0 0.02 86.7 0.98 174.6 700 1.00 168.2 0.13 24.7 0.03 88.5 0.99 172.8 800 1.05 165.0 0.10 27.6 0.03 90.1 0.99 170.9 900 1.03 158.5 0.09 31.5 0.04 91.0 1.00 168.9 1000 1.00 156.6 0.08 38.7 0.04 92.1 1.00 167.1 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast 2003 Sep 26 11 Philips Semiconductors Product specification VHF power MOS transistor BLF346 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT119A A F q C U1 B w2 M C M H1 b2 2 H c 4 6 p U2 D1 U3 D w1 M A M B M A 1 3 5 b1 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 b2 mm 7.39 6.32 5.59 5.33 5.34 5.08 4.07 3.81 inches c D D1 e 0.15 12.86 12.83 6.48 0.10 12.59 12.57 F H H1 p 2.54 21.97 18.55 3.30 2.29 21.21 18.28 3.05 Q q U1 U2 U3 w1 4.57 24.89 6.48 12.32 18.42 0.25 4.06 24.64 6.22 12.07 w2 w3 0.51 0.25 0.291 0.220 0.210 0.160 0.006 0.505 0.505 0.100 0.865 0.730 0.130 0.180 0.980 0.255 0.485 0.725 0.010 0.020 0.010 0.255 0.249 0.210 0.200 0.150 0.004 0.496 0.495 0.090 0.835 0.720 0.120 0.160 0.970 0.245 0.475 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT119A 2003 Sep 26 EUROPEAN PROJECTION ISSUE DATE 99-03-29 12 Philips Semiconductors Product specification VHF power MOS transistor BLF346 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Sep 26 13 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/05/pp14 Date of release: 2003 Sep 26 Document order number: 9397 750 11601