BLF546,112

BLF546 UHF push-pull power MOS transistor Rev. 4 — 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.ampleon.com http://www.semiconductors.philips.com use http://www.ampleon.com (Internet) sales.addresses@www.semiconductors.philips.com use http://www.ampleon.com/sales The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © Ampleon B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office (details via http://www.ampleon.com/sales). Thank you for your cooperation and understanding, Ampleon Philips Semiconductors Product specification UHF push-pull power MOS transistor FEATURES BLF546 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability handbook, halfpage 1 4 d • Designed for broadband operation. g s g 5 DESCRIPTION 2 Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268A balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors. d 3 Top view MAM395 Fig.1 Simplified outline and symbol. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. PINNING - SOT268A WARNING PIN DESCRIPTION 1 drain 1 2 gate 1 3 gate 2 4 drain 2 5 source Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull common source test circuit. MODE OF OPERATION CW, class-B 2003 Sep 22 f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 500 28 80 >11 >50 2 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor section (unless otherwise specified) VDS drain-source voltage − VGS gate-source voltage − ±20 V ID drain current (DC) − 9 A Ptot total power dissipation − 145 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C Tmb ≤ 25 °C; total device; both sections equally loaded 65 V THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base total device; both sections equally loaded 1.2 K/W Rth mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded 0.25 K/W MRA995 102 handbook, halfpage MDA519 200 handbook, halfpage Ptot (W) 160 ID (A) (2) 120 (1) 10 (2) (1) 80 40 1 1 10 VDS (V) 0 102 0 40 80 (1) Current in this area may be limited by RDSon. (1) Continuous operation. (2) Tmb = 25 °C. Total device; both sections equally loaded. (2) Short-time operation during mismatch. Total device; both sections equally loaded. Fig.2 DC SOAR. 2003 Sep 22 120 Th (°C) Fig.3 Power derating curves. 3 160 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 65 − Per section V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 20 mA − V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 2 mA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage ID = 80 mA; VDS = 10 V 1 − 4 V gfs forward transconductance ID = 2.4 A; VDS = 10 V 1.2 1.7 − S RDSon drain-source on-state resistance ID = 2.4 A; VGS = 10 V − 0.4 0.6 Ω IDSX on-state drain current VGS = 15 V; VDS = 10 V − 10 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 60 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 46 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 15 − pF VGS group indicator LIMITS (V) GROUP LIMITS (V) GROUP MIN. MAX. MIN. MAX. A 2.0 2.1 O 3.3 3.4 B 2.1 2.2 P 3.4 3.5 C D 2.2 2.3 Q 3.5 3.6 2.3 2.4 R 3.6 3.7 E 2.4 2.5 S 3.7 3.8 F 2.5 2.6 T 3.8 3.9 G 2.6 2.7 U 3.9 4.0 H 2.7 2.8 V 4.0 4.1 J 2.8 2.9 W 4.1 4.2 K 2.9 3.0 X 4.2 4.3 L 3.0 3.1 Y 4.3 4.4 M 3.1 3.2 Z 4.4 4.5 N 3.2 3.3 2003 Sep 22 4 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 MDA520 12 MDA521 12 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) 8 8 4 4 0 −4 10−2 10−1 1 ID (A) 0 10 0 4 8 12 VGS (V) 16 VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values per section. Fig.5 MDA522 0.8 Drain current as a function of gate-source voltage; typical values per section. MDA523 250 handbook, halfpage handbook, halfpage C (pF) RDSon (Ω) 200 0.6 150 0.4 100 0.2 Cis 50 0 Cos 0 0 40 80 120 Tj (°C) 160 1 10 ID = 2.4 A; VGS = 10 V. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature; typical values per section. 2003 Sep 22 5 20 30 VDS (V) 40 Input and output capacitance as functions of drain-source voltage; typical values per section. Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 MDA524 80 handbook, halfpage Crs (pF) 60 40 20 0 0 10 20 30 VDS (V) 40 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section. APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.25 K/W, unless otherwise specified. RF performance in a common source, class-B, push-pull circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) 500 28 2 × 80 80 >11 typ. 13 >50 typ. 60 Ruggedness in class-B operation The BLF546 is capable of withstanding a full load mismatch corresponding to VSWR = 10 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power. 2003 Sep 22 6 Philips Semiconductors Product specification UHF push-pull power MOS transistor MDA525 25 Gp handbook, halfpage (dB) 20 BLF546 100 ηC (%) MDA526 120 handbook, halfpage PL (W) 80 Gp 80 15 60 ηC 10 40 40 5 20 0 40 60 80 100 PL (W) 0 120 0 0 4 8 12 PIN (W) 16 Class-B operation; VDS = 28 V; IDQ = 2 × 80 mA; ZL = 2.3 + j2.7 Ω(per section); f = 500 MHz. Class-B operation; VDS = 28 V; IDQ = 2 × 80 mA; ZL = 2.3 + j2.7 Ω(per section); f = 500 MHz. Fig.9 Fig.10 Load power as a function of input power; typical values. Power gain and efficiency as functions of load power; typical values. 2003 Sep 22 7 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 handbook, full pagewidth C12 +VD C13 R1 VBIAS R2 R7 C8 C7 L20 C14 ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, R3 L16 D.U.T. L1 50 Ω input C1 L4 L6 L8 L10 L12 L14 L18 L24 C23 L22 L27 L2 C3 C4 C5 C6 C9 C18 C19 C20 C21 C22 C1 L3 L26 50 Ω output C24 L5 L7 L9 L11 L13 L15 BLF546 L19 L23 L25 L28 L17 R4 C15 C10 C11 R8 L21 MDA530 VBIAS R5 C16 R6 C17 +VD f = 500 MHz. Fig.11 Test circuit for class-B operation. List of components (see Fig.11) COMPONENT DESCRIPTION VALUE C1, C2 multilayer ceramic chip capacitor; note 1 33 pF, 500 V C3 multilayer ceramic chip capacitor; note 1 11 pF, 500 V C4, C6, C21, C22 film dielectric trimmer 2 to 9 pF C5 multilayer ceramic chip capacitor; note 2 12 pF, 500 V C7, C10, C14, C15 multilayer ceramic chip capacitor; note 1 CATALOGUE NO. 2222 809 09005 390 pF, 500 V C8, C11, C12, C17 multilayer ceramic chip capacitor 100 nF, 50 V C9 multilayer ceramic chip capacitor; note 2 39 pF, 500 V C13, C16 electrolytic capacitor 4.7 µF, 63 V 2003 Sep 22 DIMENSIONS 8 2222 852 47104 2222 030 38478 Philips Semiconductors Product specification UHF push-pull power MOS transistor COMPONENT BLF546 DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C18, C19 multilayer ceramic chip capacitor; note 2 18 pF, 500 V C20 multilayer ceramic chip capacitor; note 2 15 pF, 500 V C23, C24 multilayer ceramic chip capacitor; note 1 15 pF, 500 V L1, L3, L26, L28 stripline; note 3 50 Ω 55.6 × 2.4 mm L2 semi-rigid cable; note 4 50 Ω ext. dia. 2 mm ext. conductor length 55.6 mm L4, L5 stripline; note 3 42 Ω 12 × 3 mm L6, L7 stripline; note 3 42 Ω 26.5 × 3 mm L8, L9 stripline; note 3 42 Ω 5.5 × 3 mm L10, L11 stripline; note 3 42 Ω 6 × 3 mm L12, L13 stripline; note 3 42 Ω 3 × 3 mm L14, L15 stripline; note 3 42 Ω 7 × 3 mm L16, L17 3 turns enamelled 1 mm copper wire 15.6 nH length 8.5 mm int. dia. 5.4 mm leads 2 × 5 mm L18, L19 stripline; note 3 42 Ω 12 × 3 mm L20, L21 grade 3B Ferroxcube RF choke L22, L23 stripline; note 3 42 Ω 20 × 3 mm L24, L25 stripline; note 3 42 Ω 14 × 3 mm L27 semi-rigid cable; note 5 50 Ω ext. dia. 2 mm ext. conductor length 55.6 mm R1, R5 0.4 W metal film resistor 11.5 kΩ R2, R6 10 turns cermet potentiometer 50 kΩ R3, R4 0.4 W metal film resistor 10 kΩ 2322 151 71003 R7, R8 1 W metal film resistor 10 Ω 2322 153 51009 4312 020 36642 2322 151 71153 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (εr = 2.2); thickness 1⁄32 inch. 4. Semi-rigid cable L2 is soldered on to stripline L3. 5. Semi-rigid cable L27 is soldered on to stripline L28. 2003 Sep 22 9 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 200 handbook, full pagewidth straps 85 straps VD C12 R2 C13 L20 L2 L3 C7 C8 C1 C2 L1 R3 L10 L12 L14 C6 C9 C18 L13 L15 L11 L9 R4 L8 L4 C3 L5 C4 L6 L7 C5 C10 C11 C15 L27 R7 C14 L28 L16 C20 L18 C19 L19 L17 C21 C23 L24 L22 L23 C22 L25 C24 R8 L26 L21 C16 R6 C17 MDA518 VD Dimensions in mm. The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Fig.12 Component layout for 500 MHz test circuit. 2003 Sep 22 10 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 MDA527 2 Zi handbook, halfpage ri (Ω) 0 (Ω) 8 xi −2 6 −4 4 −6 2 −8 MDA528 10 ZL handbook, halfpage RL XL 0 0 200 400 f (MHz) 600 0 200 400 f (MHz) 600 Class-B operation; VDS = 28 V; IDQ = 2 × 80 mA; PL = 80 W. Class-B operation; VDS = 28 V; IDQ = 2 × 80 mA; PL = 80 W. Fig.13 Input impedance as a function of frequency (series components); typical values per section. Fig.14 Load impedance as a function of frequency (series components); typical values per section. MDA529 30 handbook, halfpage Gp (dB) 20 10 0 0 200 400 f (MHz) 600 Class-B operation; VDS = 28 V; IDQ = 2 × 80 mA; PL = 80 W. Fig.15 Power gain as a function of frequency; typical values per section. 2003 Sep 22 11 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT268A D A F 5 U1 B q C w2 M C M H1 1 H c 4 P U2 E w1 M A M B M A 2 3 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D E e F H H1 p Q q U1 U2 w1 w2 w3 mm 4.91 4.19 1.66 1.39 0.13 0.07 12.96 12.44 6.48 6.22 6.45 2.04 1.77 17.02 16.00 8.23 7.72 3.43 3.17 2.67 2.41 18.42 24.90 24.63 6.61 6.35 0.25 0.51 0.25 inches 0.193 0.165 0.065 0.005 0.055 0.003 0.670 0.324 0.630 0.304 0.135 0.125 0.105 0.725 0.095 0.980 0.970 0.260 0.010 0.020 0.010 0.250 OUTLINE VERSION 0.510 0.255 0.080 0.254 0.490 0.245 0.070 REFERENCES IEC JEDEC EIAJ SOT268A 2003 Sep 22 EUROPEAN PROJECTION ISSUE DATE 99-03-29 12 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Sep 22 13 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/03/pp14 Date of release: 2003 Sep 22 Document order number: 9397 750 11591