BLF6G10-200RN,112

BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 869 to 894 28 40 20 28.5 39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features  Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA:  Average output power = 40 W  Power gain = 20 dB  Efficiency = 28.5 %  ACPR = 39 dBc  Easy power control  Integrated ESD protection  Enhanced ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (700 MHz to 1000 MHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) BLF6G10(LS)-200RN Power LDMOS transistor 1.3 Applications  RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 700 MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G10-200RN (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 BLF6G10LS-200RN (SOT502B) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G10-200RN - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A earless flanged LDMOST ceramic package; 2 leads SOT502B BLF6G10LS-200RN - 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLF6G10-200RN_10LS-200RN#3 Product data sheet Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V ID drain current - 49 A Tstg storage temperature 65 +150 C Tj junction temperature - 225 C All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 12 BLF6G10(LS)-200RN Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Type Typ Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 C; PL = 40 W BLF6G10-200RN 0.50 K/W BLF6G10LS-200RN 0.35 K/W 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.4 2.0 2.4 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 1620 mA 1.7 2.2 2.7 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.2 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 40 48 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 420 nA 18 26 S gfs forward transconductance VDS = 10 V; ID = 9.45 A 11 RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 9.45 A 0.012 0.07 0.093  Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - - 3 pF 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 871.5 MHz; f2 = 876.5 MHz; f3 = 886.5 MHz; f4 = 891.5 MHz; RF performance at VDS = 28 V; IDq = 1400 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions PL(AV) average output power Gp power gain IRL input return loss PL(AV) = 40 W D drain efficiency PL(AV) = 40 W ACPR adjacent channel power ratio PL(AV) = 40 W - 39.4 36 PL(AV) = 40 W Min Typ Max Unit - 40 - W 19 20 - dB - 6.4 4.5 dB 25 28.5 - % dBc 7.1 Ruggedness in class-AB operation The BLF6G10-200RN and BLF6G10LS-200RN are enhanced rugged devices and are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1400 mA; PL = 200 W; f = 894 MHz. BLF6G10-200RN_10LS-200RN#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 12 BLF6G10(LS)-200RN Power LDMOS transistor 7.2 One-tone CW 001aaj415 21 60 Gp Gp (dB) ηD (%) 19 40 ηD 17 20 15 0 40 80 120 0 160 200 PL (W) VDS = 28 V; IDq = 1400 mA; f = 881 MHz. Fig 1. One-tone CW power gain and drain efficiency as function of load power; typical values 7.3 Two-tone CW 001aaj416 21 60 Gp Gp (dB) ηD (%) 001aah520 −20 IMD (dBc) −30 19 IMD3 40 ηD −40 IMD5 17 20 IMD7 −50 15 0 120 0 360 240 −60 0 PL(PEP) (W) Two-tone CW power gain and drain efficiency as function of peak envelope load power; typical values BLF6G10-200RN_10LS-200RN#3 Product data sheet 120 180 PL(PEP) (W) VDS = 28 V; IDq = 1400 mA; f = 881 MHz (100 kHz). Fig 2. 60 VDS = 28 V; IDq = 1400 mA; f = 881 MHz (100 kHz). Fig 3. Two-tone CW intermodulation distortion as a function of peak envelope load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 12 BLF6G10(LS)-200RN Power LDMOS transistor 7.4 2-carrier W-CDMA 001aaj417 22 IMD3, ACPR (dBc) ηD (%) Gp (dB) 21 001aah522 −35 40 −40 30 IMD3 20 Gp ηD 19 18 0 20 40 20 −45 10 −50 0 −55 60 ACPR 0 20 40 PL(AV) (W) VDS = 28 V; IDq = 1400 mA; f = 881 MHz (5 MHz); carrier spacing 10 MHz. Fig 4. 60 PL(AV) (W) VDS = 28 V; IDq = 1400 mA; f = 881 MHz (5 MHz); carrier spacing 10 MHz. 2-carrier W-CDMA power gain and drain efficiency as function of average load power; typical values Fig 5. 2-carrier W-CDMA adjacent channel power ratio and third order intermodulation distortion as function of average load power; typical values 8. Test information VGG VDD R1 C3 C7 C8 C11 C13 C17 R3 L1 R2 C5 input 50 Ω C1 C16 output 50 Ω C6 C2 C15 C9 C10 C12 C14 C18 001aah523 The drawing is not to scale. Fig 6. Test circuit for operation at 800 MHz BLF6G10-200RN_10LS-200RN#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 12 BLF6G10(LS)-200RN Power LDMOS transistor C7 C8 R1 R3 C11 C13 C3 Q1 L1 C17 R2 C5 C16 C1 C6 C2 C15 C18 C12 C14 C9 C10 IN 800 -1000 MHz V1.0 OUT 800 -1000 MHz V1.0 001aah524 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. The drawing is not to scale. Fig 7. Component layout Table 8. List of components See Figure 6 and Figure 7. Component Description Value C1, C3, C11, C12, C16 multilayer ceramic chip capacitor Remarks 68 pF [1] solder vertically solder vertically solder vertically C2 multilayer ceramic chip capacitor 13 pF [1] C5, C6 multilayer ceramic chip capacitor 10 pF [1] C7, C8, C9, C10 electrolytic capacitor 220 nF C13, C14 multilayer ceramic chip capacitor 4.7 F; 50 V [2] C15 multilayer ceramic chip capacitor 1.5 pF [1] C17, C18 electrolytic capacitor 220 F; 63 V L1 ferrite SMD bead - Q1 BLF6G10LS-200RN - R1, R2, R3 SMD resistor 9.1 ; 0.1 W [1] American Technical Ceramics type 100B or capacitor of same quality. [2] TDK or capacitor of same quality. BLF6G10-200RN_10LS-200RN#3 Product data sheet Vishay VJ1206Y224KXB solder vertically Ferroxcube BDS 3/3/4.6-4S2 or equivalent All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 12 BLF6G10(LS)-200RN Power LDMOS transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION D E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA ISSUE DATE 03-01-10 12-05-02 SOT502A Fig 8. EUROPEAN PROJECTION Package outline SOT502A BLF6G10-200RN_10LS-200RN#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 12 BLF6G10(LS)-200RN Power LDMOS transistor Earless flanged ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION D E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 07-05-09 12-05-02 SOT502B Fig 9. 0.390 0.010 0.380 Package outline SOT502B BLF6G10-200RN_10LS-200RN#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 12 BLF6G10(LS)-200RN Power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CDMA Code Division Multiple Access CW Continuous Wave DPCH Dedicated Physical CHannel EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G10-200RN_10LS-200RN#3 20150901 Modifications: Product data sheet - BLF6G10-200RN_10LS-200RN_2 • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF6G10-200RN_10LS-200RN_2 20100121 Product data sheet - BLF6G10-200RN_10LS-200RN_1 BLF6G10-200RN_10LS-200RN_1 20090119 Product data sheet - - BLF6G10-200RN_10LS-200RN#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 12 BLF6G10(LS)-200RN Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the BLF6G10-200RN_10LS-200RN#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 12 BLF6G10(LS)-200RN Power LDMOS transistor surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. 13. Contact information For more information, please visit: http://www.ampleon.com BLF6G10-200RN_10LS-200RN#3 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 12 BLF6G10(LS)-200RN Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF6G10-200RN_10LS-200RN#3