BLL1214-250R,112

BLL1214-250R LDMOS L-band radar power transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. Table 1. Test information Typical RF performance at Th = 25 C; tp = 1 ms;  = 10 %; in a common source class-AB test circuit. Mode of operation pulsed RF f VDS IDq PL Gp D Pdroop(pulse) tr tf (GHz) (V) (mA) (W) (dB) (%) (dB) (ns) (ns) 1.2 to 1.4 36 150 250 13 47 0.2 15 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features  Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 36 V, an IDq of 150 mA, a tp of 1 ms with  of 10 %:  Output power = 250 W  Power gain = 13 dB  Efficiency = 47 %  High power gain  Easy power control  Excellent ruggedness  Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3 Applications  L-band radar applications in the 1.2 GHz to 1.4 GHz frequency range BLL1214-250R LDMOS L-band radar power transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLL1214-250R Package Name Description Version - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 75 V VGS gate-source voltage 22 +22 V Th  70 C; tp = 1 ms;  = 10 % Ptot total power dissipation - 400 A Tstg storage temperature 65 +150 C Tj junction temperature - 200 C 5. Thermal characteristics Table 5. BLL1214-250R#2 Product data sheet Thermal characteristics Symbol Parameter Conditions Typ Unit Zth(j-h) transient thermal impedance from junction to heatsink Th = 25 C tp = 100 s;  = 10 % 0.17 K/W tp = 1 ms;  = 10 % 0.32 K/W All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 12 BLL1214-250R LDMOS L-band radar power transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C. Symbol Parameter Conditions Min V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3 mA Typ Max Unit 75 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 300 mA 4 - 5 V IDSS drain leakage current VGS = 0 V; VDS = 36 V - - 1 A IDSX drain cut-off current VGS = VGS(th) + 9 V; VDS = 10 V 45 - - A IGSS gate leakage current VGS = 20 V; VDS = 0 V - - 1 A gfs forward transconductance VDS = 10 V; ID = 10 A - 9 - S RDS(on) drain-source on-state resistance VGS = 9 V; ID = 10 A - 60 - m Table 7. RF characteristics Mode of operation: pulsed RF; tp = 1 ms;  = 10 %; f = 1.2 GHz to 1.4 GHz; RF performance at VDS = 36 V; IDq = 150 mA; Th = 25 C; Zth(mb-h) = 0.25 K/W; unless otherwise specified, in a common source class-AB circuit. Symbol Parameter PL output power Conditions VDS drain-source voltage Gp Min Typ Max Unit - 250 - W PL = 250 W - 36 - V power gain PL = 250 W - 13 - dB D drain efficiency PL = 250 W - 47 - % Pdroop(pulse) pulse droop power PL = 250 W - 0.2 - dB tr rise time PL = 250 W - 15 - ns tf fall time PL = 250 W - 5 - ns 6.1 Ruggedness in class-AB operation The BLL1214-250R is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the following conditions: VDS = 36 V; f = 1.2 GHz to 1.4 GHz at rated load power. 7. Application information 7.1 Impedance information Table 8. Typical impedance Typical values unless otherwise specified. f BLL1214-250R#2 Product data sheet ZS ZL GHz   1.20 1.3  j2.8 1.1  j0.9 1.25 1.9  j2.8 1.0  j0.5 1.30 4.6  j2.9 0.8  j0.2 1.35 5.7  j0.3 0.7  j0.3 1.40 2.7  j1.8 0.6  j0.4 All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 12 BLL1214-250R LDMOS L-band radar power transistor drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.2 Application circuit Table 9. List of components See Figure 2. The components are situated in one side of the copper-clad Rodgers Duroid 6010 Printed-Circuit Board (PCB); r = 10.2 F/m; thickness = 0.64 mm. The other side is unetched and serves as a ground plane. Component BLL1214-250R#2 Product data sheet Description Value Remarks C1, C3 multilayer ceramic chip capacitor 39 pF [1] C2, C4 multilayer ceramic chip capacitor 47 pF [1] C5, C6 multilayer ceramic chip capacitor 20 nF [2] C7 multilayer ceramic chip capacitor 36 pF [2] C8 electrolytic capacitor 100 F; 100 V [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 200B or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 12 BLL1214-250R LDMOS L-band radar power transistor 40 40 60 C8 C7 C4 C6 C5 C3 C1 C2 mld866 See Table 9 for list of components. Dimensions in mm. The components are situated in one side of the copper-clad Rodgers Duroid 6010 Printed-Circuit Board (PCB); r = 10.2 F/m; thickness = 0.64 mm. The other side is unetched and serves as a ground plane. Fig 2. BLL1214-250R#2 Product data sheet Component layout All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 12 BLL1214-250R LDMOS L-band radar power transistor 8. Test information 8.1 RF performance mld858 300 mld859 300 PL (W) PL (W) 200 200 (3) (3) 100 100 (2) (2) (1) (1) 0 0 0 4 8 12 Pi (W) 0 16 tp = 1 ms;  = 10 %. 4 (1) f = 1.2 GHz. (2) f = 1.3 GHz. (2) f = 1.3 GHz. (3) f = 1.4 GHz. (3) f = 1.4 GHz. Output power as a function of input power; typical values Fig 4. mld860 16 (3) Gp (dB) (2) Pi (W) 16 Output power as a function of input power; typical values mld861 16 (3) Gp (dB) (1) 12 12 8 8 4 4 0 (2) (1) 0 0 100 0 300 200 100 PL (W) tp = 1 ms;  = 10 %. tp = 100 s;  = 10 %. (1) f = 1.2 GHz. (1) f = 1.2 GHz. (2) f = 1.3 GHz. (2) f = 1.3 GHz. (3) f = 1.4 GHz. (3) f = 1.4 GHz. Power gain as a function of load power; typical values BLL1214-250R#2 Product data sheet 300 200 PL (W) Fig 5. 12 tp = 100 s;  = 10 %. (1) f = 1.2 GHz. Fig 3. 8 Fig 6. Power gain as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 12 BLL1214-250R LDMOS L-band radar power transistor mld862 60 mld863 60 (1) ηD (%) ηD (%) (2) (1) (3) 40 (2) 40 (3) 20 20 0 0 0 100 200 PL (W) 0 300 tp = 1 ms;  = 10 %. (1) f = 1.2 GHz. (2) f = 1.3 GHz. (2) f = 1.3 GHz. (3) f = 1.4 GHz. (3) f = 1.4 GHz. Drain efficiency as a function of load power; typical values mld864 15 Gp (dB) 14 200 PL (W) 300 tp = 100 s;  = 10 %. (1) f = 1.2 GHz. Fig 7. 100 60 ηD (%) 50 ηD Fig 8. Drain efficiency as a function of load power; typical values mld865 15 Gp (dB) Gp 60 ηD (%) 50 14 ηD Gp 13 40 13 40 12 30 12 30 11 20 11 20 10 1.15 1.25 1.35 f (GHz) 10 1.45 tp = 1 ms;  = 10 %. Fig 9. Product data sheet 1.25 1.35 f (GHz) 10 1.45 tp = 100 s;  = 10 %. Power gain and drain efficiency as function of frequency; typical values BLL1214-250R#2 10 1.15 Fig 10. Power gain and drain efficiency as function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 12 BLL1214-250R LDMOS L-band radar power transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION D E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 12-05-02 SOT502A Fig 11. Package outline SOT502A BLL1214-250R#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 12 BLL1214-250R LDMOS L-band radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym Description DC Direct Current LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency L-band Long wave band VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLL1214-250R#2 20150901 Product data sheet - BLL1214-250R_1 Modifications: BLL1214-250R_1 BLL1214-250R#2 Product data sheet • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. 20100204 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 - © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 12 BLL1214-250R LDMOS L-band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLL1214-250R#2 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 12 BLL1214-250R LDMOS L-band radar power transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 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Contact information For more information, please visit: http://www.ampleon.com BLL1214-250R#2 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 12 BLL1214-250R LDMOS L-band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 3 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLL1214-250R#2