BLF2043,135

BLF2043 UHF power LDMOS transistor Rev. 7 — 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.ampleon.com http://www.semiconductors.philips.com use http://www.ampleon.com (Internet) sales.addresses@www.semiconductors.philips.com use http://www.ampleon.com/sales The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © Ampleon B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office (details via http://www.ampleon.com/sales). Thank you for your cooperation and understanding, Ampleon Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043 FEATURES PINNING - SOT538A • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA: PIN – Output power = 10 W (PEP) – Gain = 12 dB DESCRIPTION 1 drain 2 gate 3 source, connected to mounting base – Efficiency = 36.5% – dim = −32 dBc • Easy power control 1 • Excellent ruggedness • High power gain 3 • Excellent thermal stability • Designed for broadband operation (HF to 2200 MHz) • No internal matching for broadband operation. 2 Top view MBK905 APPLICATIONS Fig.1 Simplified outline. • RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the HF to 2200 MHz frequency range • Broadcast drivers. DESCRIPTION 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. QUICK REFERENCE DATA Typical RF performance at Th = 25 °C in a common source test circuit. f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) dim (dBc) f1 = 2000; f2 = 2000.1 26 10 (PEP) 12.5 36.5 −32 MODE OF OPERATION CW, class-AB (2-tone) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 75 V VGS gate-source voltage − ±15 V ID drain current (DC) − 2.2 A Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2003 Feb 10 2 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043 THERMAL CHARACTERISTICS SYMBOL Rth j-h PARAMETER CONDITIONS VALUE UNIT 9 K/W Tmb = 25 °C; note 1 thermal resistance from junction to heatsink Note 1. Thermal resistance is determined under RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 0.2 mA 65 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 20 mA 4 − 5 V IDSS drain-source leakage current VGS = 0; VDS = 26 V − − 1.5 µA IDSX on-state drain current VGS = VGSth + 9 V; VDS = 10 V 2.8 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 40 nA gfs forward transconductance VDS = 10 V; ID = 0.75 A − 0.5 − S RDSon drain-source on-state resistance VGS = 10 V; ID = 0.75 A − 1.2 − Ω Cis input capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 11 − pF Cos output capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 9 − pF Crs feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 0.5 − pF APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.4 K/W, unless otherwise specified. MODE OF OPERATION CW, class-AB (2-tone) f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) dim (dBc) f1 = 2000; f2 = 2000.1 26 85 10 (PEP) >11.8 >33 ≤−26 Ruggedness in class-AB operation The BLF2043 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 2000 MHz at rated load power. 2003 Feb 10 3 Philips Semiconductors Product specification UHF power LDMOS transistor MCE017 15 handbook, halfpage BLF2043 60 dim (dBc) ηD (%) Gp Gp (dB) MCE018 0 handbook, halfpage −20 10 d3 40 ηD d5 −40 d7 5 20 −60 0 0 Fig.2 5 10 −80 0 20 15 PL (PEP) (W) Power gain and efficiency as functions of peak envelope load power; typical values. Fig.3 MCE019 0 dim (dBc) handbook, halfpage −10 −20 −30 (1) (3) −40 (2) −50 0 5 10 15 20 PL (PEP) (W) (1) IDQ = 55 mA. (2) IDQ = 85 mA. (3) IDQ = 115 mA. Fig.4 Third order intermodulation distortion as a function of peak envelope load power and IDQ setting; typical values. 2003 Feb 10 4 0 5 10 20 15 PL (PEP) (W) Intermodulation distortion as a function of peak envelope load power; typical values. Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043 MGS999 MGT001 10 6 handbook, halfpage handbook, Z halfpage L (Ω) Zi (Ω) RL 4 8 2 xi 6 0 4 −2 2 −4 ri 0 1.8 XL 2 f (GHz) −6 1.8 2.2 2 f (GHz) VDS = 26 V; IDQ = 25 mA; PL = 10 W; Th ≤ 25 °C. Impedance measured at reference planes (see Fig.7). VDS = 26 V; IDQ = 25 mA; PL = 10 W; Th ≤ 25 °C. Impedance measured at reference planes (see Fig.7). Fig.5 Fig.6 Input impedance as a function of frequency (series components); typical values. 2.2 Load impedance as a function of frequency (series components); typical values. handbook, halfpage drain handbook, halfpage gate Zi ZL reference planes Fig.7 MCE020 MGT002 Fig.8 Definition of transistor impedance. Measuring reference planes SOT538A. 2003 Feb 10 5 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043 VDD handbook, full pagewidth L2 C16 C18 C19 C12 C13 C14 Vgate C17 L1 C6 R1 C7 C1 output 50 Ω L8 L7 L3 L5 L4 C15 L6 L10 C11 L11 output 50 Ω L9 C2 C3 C4 C8 C5 C9 C10 Fig.9 Class-AB test circuit for 2 GHz. 2003 Feb 10 6 MCE021 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043 List of components (see Figs 8 and 9) COMPONENT DESCRIPTION VALUE C1, C2 multilayer ceramic chip capacitor; note 1 6.8 pF C3 multilayer ceramic chip capacitor; note 1 1.0 pF DIMENSIONS CATALOGUE NO. C4, C10, C11 tekelec variable capacitor; type 37271 C5, C7 multilayer ceramic chip capacitor; note 1 2.0 pF 0.6 to 4.5 pF C6 multilayer ceramic chip capacitor; note 1 2.7 pF C8 multilayer ceramic chip capacitor; note 1 0.2 pF C9 multilayer ceramic chip capacitor; note 1 0.6 to 4.5 pF C12 multilayer ceramic chip capacitor; note 1 10 pF C13 multilayer ceramic chip capacitor; note 1 51 pF C14 multilayer ceramic chip capacitor; note 1 120 pF C15 multilayer ceramic chip capacitor 100 nF 2222 581 16641 C16 electrolytic capacitor 100 µF; 63 V 2222 037 58101 C17, C18 tantalum SMD capacitor 10 µF; 35 V C19 multilayer ceramic chip capacitor; note 2 1 nF L1, L2 3 turns enamelled 0.5 mm copper wire L3 stripline; note 3 50 Ω 3.5 × 1.5 mm L4 stripline; note 3 50 Ω 1.0 × 1.5 mm L5 stripline; note 3 73.2 Ω 5 × 2 mm 3 loops; d = 3 mm length = 3 mm L6 stripline; note 3 31 Ω 11.0 × 0.8 mm L7, L8 stripline; note 3 64.7 Ω 1.5 × 1.0 mm L9 stripline; note 3 31 Ω 14.4 × 3.0 mm L10, L11 stripline; note 3 50 Ω 3.5 × 1.5 mm R1 metal film resistor 2.2 kΩ; 0.6 W Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board with Rogers 5880 dielectric (εr = 2.2); thickness 0.51 mm. 2003 Feb 10 7 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043 handbook, full pagewidth BLF2043 TEST CIRCUIT C17 C19 C18 C16 L2 C15 C14 C13 C12 C1 C3 C2 L1 C6 C7 R1 C11 C5 BLF2043 C8 C9 C4 C10 BLF2043 TEST CIRCUIT 54 52 MCE022 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.51 mm. Fig.10 Component layout for 2 GHz class-AB test circuit. 2003 Feb 10 8 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043 PACKAGE OUTLINE Ceramic surface mounted package; 2 leads SOT538A D A 3 z2 (4×) z4 (4×) D1 D2 B c 1 L A z1 (4×) E2 H E1 E z3 (4×) 2 α w1 M B M b Q 0 2.5 5 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 E E1 E2 H L Q w1 z1 z2 z3 z4 α mm 2.95 2.29 1.35 1.19 0.23 0.18 5.16 5.00 4.65 4.50 5.16 5.00 4.14 3.99 3.63 3.48 4.14 3.99 7.49 7.24 2.03 1.27 0.10 0.00 0.25 0.58 0.43 0.25 0.18 0.97 0.81 0.51 0.00 7° 0° inches 0.116 0.090 0.053 0.047 0.009 0.007 0.203 0.197 0.183 0.177 0.203 0.197 0.163 0.157 0.143 0.137 0.163 0.157 0.295 0.285 0.080 0.050 0.023 0.010 0.017 0.007 0.038 0.032 0.020 0.000 7° 0° OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 00-03-03 02-08-20 SOT538A 2003 Feb 10 0.004 0.010 0.000 9 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Feb 10 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043 NOTES 2003 Feb 10 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/06/pp12 Date of release: 2003 Feb 10 Document order number: 9397 750 10917