BLF3G22-30
UHF power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
30 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz
Table 1.
Typical class-AB RF performance
IDq = 450 mA; Th = 25 C in a common source test circuit.
Mode of operation
2-tone
2-carrier
W-CDMA[1]
f1
f2
VDS
IDq
PL(PEP)
PL(AV)
Gp
D
IMD
ACPR
IMD3
(MHz)
(MHz)
(V)
(mA)
(W)
(W)
(dB)
(%)
(dBc)
(dBc)
(dBc)
2170
2170.1
28
450
36
-
14
34
24
-
-
-
42[2]
38
2115
2165
28
[1]
3GPP test model 1; 64 channels with 66 % clippings
[2]
Measured within 10 kHz bandwidth
450
-
6
15
21
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Excellent back off linearity
Typical 2-carrier W-CDMA performance at a supply voltage of 28 V and IDq of 450 mA:
Average output power = 6 W
Gain = 15 dB
Efficiency = 21 %
ACPR = 42 dBc (at 3.84 MHz)
IMD3 = 38 dBc
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Internally matched for ease of use
ESD protection
BLF3G22-30
UHF power LDMOS transistor
1.3 Applications
RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range
Broadcast drivers
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain
2
gate
3
source
Simplified outline
Symbol
1
1
[1]
2
3
3
2
sym112
[1]
Connected to flange
3. Ordering information
Table 3.
Ordering information
Type number
BLF3G22-30
Package
Name
Description
Version
-
flanged ceramic package; 2 mounting holes; 2 leads
SOT608A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
BLF3G22-30#2
Product data sheet
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
65
V
VGS
gate-source voltage
-
15
V
ID
drain current
-
12
A
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
200
C
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Rev. 2 — 1 September 2015
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BLF3G22-30
UHF power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
Thermal characteristics
Parameter
Conditions
Rth(j-case) thermal resistance from junction to case
[1]
Typ
Th = 25 C
[1]
Unit
1.85 K/W
Thermal resistance is determined under specified RF operating conditions
6. Characteristics
Table 6.
Characteristics
Tj = 25 C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.7 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 70 mA
2.0
-
3.0
V
IDSS
drain leakage current
VGS = 0 V; VDS = 26 V
-
-
1.5
A
IDSX
drain cut-off current
VGS = VGS(th) + 9 V;
VDS = 10 V
9
-
-
A
IGSS
gate leakage current
VGS = 15 V; VDS = 0 V
-
-
150 nA
gfs
forward transconductance
VDS = 10 V; ID = 3.5 A
-
3
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 6 V;
ID = 2.5 A
-
0.3
-
Crs
feedback capacitance
-
1.7
-
pF
Max
Unit
VGS = 0 V; VDS = 26 V;
f = 1 MHz
7. Application information
Table 7.
Symbol
Application information
Parameter
Conditions
Min
Typ
Mode of operation: Two-tone CW (100 kHz tone spacing); f = 2170 MHz; IDq = 450 mA
Gp
power gain
PL(PEP) = 30 W
-
14
-
dB
RLin
input return loss
PL(PEP) = 30 W
-
15
-
dB
D
drain efficiency
PL(PEP) = 30 W
-
33
-
%
IMD3
third order intermodulation
distortion
PL(PEP) = 30 W
-
24
-
dBc
PL(PEP) < 6 W
-
< 50
-
dBc
Mode of operation: Two-tone W-CDMA; 3GPP test model 1; 1 - 64 DPCH with 66 % clipping;
f1 = 2115 MHz; f2 = 2165 MHz; IDq = 450 mA
Gp
power gain
PL(AV) = 6 W
13
15
-
dB
RLin
input return loss
PL(AV) = 6 W
-
10
8
dB
D
drain efficiency
PL(AV) = 6 W
18
21
-
%
IMD3
third order intermodulation
distortion
PL(AV) = 6 W
-
38
35
dBc
ACPR
adjacent channel power ratio PL(AV) = 6 W
-
42
38
dBc
[1]
BLF3G22-30#2
Product data sheet
[1]
Measured within 10 kHz bandwidth.
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Rev. 2 — 1 September 2015
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BLF3G22-30
UHF power LDMOS transistor
7.1 Ruggedness in class-AB operation
The BLF3G22-30 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 450 mA; PL = 30 W (CW); f = 2170 MHz.
7.2 One-tone
001aag535
20
Gp
(dB)
16
50
ηD
(%)
40
Gp
12
30
8
20
ηD
4
0
10−1
1
10
0
102
10
PL(AV) (W)
VDS = 28 V; IDq = 450 mA; Th = 25 C; f1 = 2170 MHz; f2 = 2170.1 MHz
Fig 1. Power gain and drain efficiency as functions of average load power; typical values
7.3 Two-tone
001aag536
20
Gp
(dB)
16
50
ηD
(%)
40
Gp
12
30
8
20
10
4
ηD
0
10−1
1
0
102
10
PL(PEP) (W)
VDS = 28 V; IDq = 450 mA; Th = 25 C; f1 = 2170 MHz; f2 = 2170.1 MHz
Fig 2. Power gain and drain efficiency as functions of peak envelope load power; typical
values
BLF3G22-30#2
Product data sheet
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BLF3G22-30
UHF power LDMOS transistor
001aag541
0
IMD
(dBc)
001aag542
0
IMD3
(dBc)
−30
−30
(1)
(2)
IMD3
−60
−60
(3)
IMD5
IMD7
−90
10−1
1
102
10
−90
10−1
PL(PEP) (W)
1
102
10
PL(PEP) (W)
VDS = 28 V; IDq = 450 mA; Th = 25 C;
f1 = 2170 MHz; f2 = 2170.1 MHz
VDS = 28 V; Th = 25 C; f1 = 2170 MHz;
f2 = 2170.1 MHz
(1) IDq = 400 mA
(2) IDq = 450 mA
(3) IDq = 500 mA
Fig 3. Intermodulation distortion as function of peak
envelope load power; typical values
BLF3G22-30#2
Product data sheet
Fig 4. IMD3 as function of peak envelope load power;
typical values
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Rev. 2 — 1 September 2015
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BLF3G22-30
UHF power LDMOS transistor
7.4 Two-carrier W-CDMA
Input signals: 3GPP W-CDMA, test model 1, 1-64 DPCH with 66 % clipping;
peak-to-average power ratio: 8.5 dB at 0.01 % probability on CCDF;
channel spacing = 10 MHz; bandwidth = 3.84 MHz.
001aag537
20
Gp
(dB)
16
ηD
(%)
40
Gp
001aag538
0
50
IMD3,
ACPR
(dBc)
−20
12
30
8
20
−40
4
IMD3
10
ηD
ACPR
0
26
30
0
38
42
PL(AV) (W)
34
−60
VDS = 28 V; IDq = 450 mA; Th = 25 C;
f1 = 2115 MHz; f2 = 2165 MHz
26
30
34
38
42
PL(AV) (W)
VDS = 28 V; IDq = 450 mA; Th = 25 C;
f1 = 2115 MHz; f2 = 2165 MHz
Fig 5. Power gain and drain efficiency as functions of
average load power; typical values
Fig 6. IMD3 and ACPR as functions of average load
power; typical values.
7.5 Input impedance and load impedances measured under CW
conditions
001aag539
12
001aag540
8
RL
ZL
(Ω)
Zi
(Ω)
4
Ri
8
0
4
Xi
−4
XL
0
2
2.05
2.1
2.15
2.2
−8
2
2.05
f (GHz)
Fig 7. Input impedance as function of frequency
(series components); typical values
Product data sheet
2.15
2.2
f (GHz)
VDS = 28 V; IDq = 450 mA; PL = 30 W; Th 25 C
BLF3G22-30#2
2.1
VDS = 28 V; IDq = 450 mA; PL = 30 W; Th 25 C
Fig 8. Load impedance as function of frequency
(series components); typical values
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Rev. 2 — 1 September 2015
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BLF3G22-30
UHF power LDMOS transistor
8. Test information
L1
VDD
C8
C7
L11
C6
C13
C17
C14
C19
C20
VGate
R1
L6
C11
C3
input
50 Ω
L2
L3
C4
C1
L4 L5
L7
L8
C5
L9
C9
L10
C10
output
50 Ω
C12
C2
L12
C16
C18
C15
mld944
Fig 9. Class-AB test circuit
BLF3G22-30#2
Product data sheet
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Rev. 2 — 1 September 2015
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BLF3G22-30
UHF power LDMOS transistor
40 mm
40 mm
60
mm
BLF3G22-30 testjig input
C8
BLF3G22-30 testjig output
C13
R1
C17
C6
C20
C14
L1
C19
C7
C3
C4
C11
C12
C5
C1
C9
C2
C10
C15
C18
C16
BLF3G22-30 testjig input
BLF3G22-30 testjig output
001aag543
Dimensions in mm.
The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with
Teflon dielectric (r = 2.2); thickness = 0.79 mm.
The other side is unetched and serves as a ground plane.
See Table 8 for list of components.
Fig 10. Component layout for 2.17 GHz class-AB test circuit
BLF3G22-30#2
Product data sheet
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Rev. 2 — 1 September 2015
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BLF3G22-30
UHF power LDMOS transistor
Table 8.
List of components (see Figure 9 and Figure 10)
Component
Description
Value
C1, C2, C9,
C10
Tekelec variable capacitor; type 37271
0.6 pF to 4.5 pF
C3, C4, C11,
C12
multilayer ceramic chip capacitor
[1]
6.8 pF
C5
multilayer ceramic chip capacitor
[1]
2.2 pF
multilayer ceramic chip capacitor
C6, C7, C13,
C14, C15, C16
[1]
12 pF
Dimensions
Catalogue No.
10 F
C8
tantalum capacitor
C17, C18
multilayer ceramic chip capacitor
C19
multilayer ceramic chip capacitor
C20
electrolytic capacitor
100 F; 63 V
L1
handmade; enamelled 1 mm copper
wire
-
2 loops;
4 mm in diameter
L2
stripline
[3]
50
12 mm 2.4 mm
L3
stripline
[3]
43
18 mm 3 mm
stripline
[3]
29
4 mm 5 mm
L4
1.5 F
[2]
TDK C3225X7R1H155M
1 nF
L5
stripline
[3]
10
5 mm 18.4 mm
L6
stripline
[3]
56
34.4 mm 2 mm
L7
stripline
[3]
9
10 mm 20 mm
stripline
[3]
29
4 mm 5 mm
L8
L9
stripline
[3]
41
20 mm 3.2 mm
L10
stripline
[3]
50
5 mm 2.4 mm
L11, L12
stripline
[3]
17
24.5 mm 10 mm
[1]
American Technical Ceramics type 100A or capacitor of same quality.
[2]
American Technical Ceramics type 100B or capacitor of same quality.
[3]
The striplines are on a double copper-clad Printed-Circuit Board (PCB) with Teflon dielectric (r = 2.2); thickness = 0.79 mm.
BLF3G22-30#2
Product data sheet
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Rev. 2 — 1 September 2015
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9 of 14
BLF3G22-30
UHF power LDMOS transistor
9. Package outline
Flanged ceramic package; 2 mounting holes; 2 leads
SOT608A
D
A
F
3
A
w2
D1
A B
C
U1
q
w2
B
H
c
C
A B
C
1
p
U2
E1
w3
A
E
B
2
w1
A B
b
C
Q
0
5
10 mm
scale
Dimensions (millimetre dimensions are derived from the original inch dimensions)
Unit
A
b
c
D
D1
E
E1
F
H
p
Q
q
U1
U2
w1
w2
w3
max 4.62 7.24 0.15 10.21 10.29 10.21 10.29 1.14 15.37 3.30 1.70
20.45 9.91
0.25 0.25 0.25
nom
15.24
min 3.76 6.99 0.10 10.01 10.03 10.01 10.03 0.89 15.11 2.92 1.45
20.19 9.65
mm
sot608a_po
Outline
version
References
IEC
JEDEC
JEITA
European
projection
Issue date
09-08-26
13-01-29
SOT608A
Fig 11. Package outline SOT608A
BLF3G22-30#2
Product data sheet
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BLF3G22-30
UHF power LDMOS transistor
10. Abbreviations
Table 9.
Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
LDMOS
Laterally Diffused Metal Oxide Semiconductor
RF
Radio Frequency
UHF
Ultra High Frequency
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
11. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF3G22-30#2
20150901
Product data sheet
-
BLF3G22-30_1
Modifications:
BLF3G22-30_1
BLF3G22-30#2
Product data sheet
•
The format of this document has been redesigned to comply with the new identity guidelines
of Ampleon.
•
Legal texts have been adapted to the new company name where appropriate.
20070621
Product data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
-
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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BLF3G22-30
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF3G22-30#2
Product data sheet
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
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BLF3G22-30
UHF power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13. Contact information
For more information, please visit:
http://www.ampleon.com
BLF3G22-30#2
Product data sheet
For sales office addresses, please visit:
http://www.ampleon.com/sales
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BLF3G22-30
UHF power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.5
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 4
One-tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Two-tone . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Two-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . 6
Input impedance and load impedances
measured under CW conditions . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLF3G22-30#2