BLF6G22-180PN,135

BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 6 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2110 to 2170 32 50 17.5 27.5 35[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 32 V and an IDq of 1600 mA:  Average output power = 50 W  Power gain = 17.5 dB (typ)  Efficiency = 27.5 %  ACPR = 35 dBc  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (2000 MHz to 2200 MHz)  Internally matched for ease of use  Qualified up to a supply voltage of 32 V BLF6G22(LS)-180PN Power LDMOS transistor  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol BLF6G22-180PN (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source 1 2 1 5 3 3 4 5 4 [1] 2 sym117 BLF6G22LS-180PN (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 4 [1] source 5 4 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package BLF6G22-180PN Name Description Version - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A earless flanged balanced LDMOST ceramic package; 4 leads SOT539B BLF6G22LS-180PN - BLF6G22-180PN_22LS-180PN#6 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 14 BLF6G22(LS)-180PN Power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C Tcase case temperature - 150 C Tj junction temperature - 225 C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Type Typ Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 C; BLF6G22-180PN PL(AV) = 50 W BLF6G22LS-180PN 0.45 K/W 0.38 K/W 6. Characteristics Table 6. Characteristics Tj = 25 C per section; unless otherwise specified. BLF6G22-180PN_22LS-180PN#6 Product data sheet Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 144 mA 1.575 1.9 2.3 V VGSq gate-source quiescent voltage VDS = 32 V; ID = 800 mA 1.725 2.1 2.45 V IDSS drain leakage current VGS = 0 V VDS = 28 V - - 3 A VDS = 60 V - - 5 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 25 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 300 nA gfs forward transconductance VDS = 10 V; ID = 7.2 A - 10 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5 A - 0.1 0.165  All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 14 BLF6G22(LS)-180PN Power LDMOS transistor 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 32 V; IDq = 1600 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Gp power gain PL(AV) = 50 W 16.3 17.5 18.7 dB RLin input return loss PL(AV) = 50 W - 10 dB D drain efficiency PL(AV) = 50 W 25 27.5 - % ACPR adjacent channel power ratio PL(AV) = 50 W - 35 dBc 6.5 33 Unit Table 8. Application information Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 PDPCH; f1 = 2162.5 MHz; f2 = 2167.5 MHz; RF performance at VDS = 32 V; IDq = 1600 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PARO output peak-to-average ratio Conditions Min Typ Max Unit PL(AV) = 115 W; at 0.01 % probability on CCDF 4.05 4.5 - dB 7.1 Ruggedness in class-AB operation The BLF6G22-180PN and BLF6G22LS-180PN are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1600 mA; PL = 180 W (CW); f = 2170 MHz. 001aah632 20 Gp (dB) 60 ηD (%) ηD 18 40 Gp 16 20 14 0 50 100 0 200 150 PL (W) VDS = 32 V; IDq = 1600 mA; f = 2170 MHz. Fig 1. BLF6G22-180PN_22LS-180PN#6 Product data sheet One-tone CW power gain and drain efficiency as functions of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 14 BLF6G22(LS)-180PN Power LDMOS transistor 001aah633 22 50 ηD (%) Gp (dB) ηD 20 40 001aah634 −10 IMD (dBc) IMD3 −30 18 30 Gp IMD5 16 20 IMD7 −50 14 10 12 0 Fig 2. 100 0 300 200 −70 100 200 300 PL(PEP) (W) VDS = 32 V; IDq = 1600 mA; f1 = 2170 MHz; f2 = 2170.1 MHz. VDS = 32 V; IDq = 1600 mA; f1 = 2170 MHz; f2 = 2170.1 MHz. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values 001aah635 21 Gp (dB) 20 ηD 19 35 ηD (%) 30 25 Fig 3. Two-tone intermodulation distortion as a function of peak envelope load power; typical values 001aah636 −20 ACPR (dBc) −30 20 18 Gp −40 17 15 16 10 15 5 14 0 10 20 30 40 50 0 60 70 PL(AV) (W) −50 −60 VDS = 32 V; IDq = 1600 mA; f1 = 2162.5 MHz; f2 = 2167.5 MHz; carrier spacing 5 MHz. Fig 4. 0 PL(PEP) (W) 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values BLF6G22-180PN_22LS-180PN#6 Product data sheet 0 10 20 30 40 50 60 70 PL(AV) (W) VDS = 32 V; IDq = 1600 mA; f1 = 2162.5 MHz; f2 = 2167.5 MHz; carrier spacing 5 MHz. Fig 5. 2-carrier W-CDMA adjacent channel power ratio as function of average load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 14 BLF6G22(LS)-180PN Power LDMOS transistor 001aah637 21 Gp (dB) 20 ηD 19 35 ηD (%) 30 25 18 15 16 10 15 5 14 20 30 40 −30 ACPR 50 0 60 70 PL(AV) (W) −50 −60 VDS = 32 V; IDq = 1600 mA; f1 = 2157.5 MHz; f2 = 2167.5 MHz; carrier spacing 10 MHz. Fig 6. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values BLF6G22-180PN_22LS-180PN#6 Product data sheet IMD3 −40 17 10 ACPR, IMD3 (dBc) 20 Gp 0 001aah638 −20 0 10 20 30 40 50 60 70 PL(AV) (W) VDS = 32 V; IDq = 1600 mA; f1 = 2157.5 MHz; f2 = 2167.5 MHz; carrier spacing 10 MHz. Fig 7. 2-carrier W-CDMA adjacent channel power ratio and third order intermodulation distortion as functions of average load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 14 BLF6G22(LS)-180PN Power LDMOS transistor 8. Test information C2 C3 C4 C7 C8 C9 C10 C11 R2 input 50 Ω C1 output 50 Ω C12 R1 C13 R3 C14 C5 C15 C16 C6 001aah639 See Table 9 for list of components. Fig 8. BLF6G22-180PN_22LS-180PN#6 Product data sheet Test circuit for operation at 2110 MHz and 2170 MHz All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 14 BLF6G22(LS)-180PN Power LDMOS transistor C9 C8 C7 C2 C10 C11 C3 R2 C4 C1 C13 R1 C12 C6 INPUT R3 OUTPUT C14 C15 C5 C16 TB BLF6G22-180PN TB BLF6G22-180PN 001aah640 Striplines are on a double copper-clad Rogers R04350 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 9. Component layout for 2110 MHz and 2170 MHz test circuit Table 9. List of components For test circuit, see Figure 8 and Figure 9. BLF6G22-180PN_22LS-180PN#6 Product data sheet Component Description Value C1, C3, C5 ATC multilayer ceramic chip capacitor 10 pF C2, C8, C16 TDK multilayer ceramic chip capacitor 4.7 F C4, C6 TDK multilayer ceramic chip capacitor 220 nF C7, C14 ATC multilayer ceramic chip capacitor 10 pF C9 electrolytic capacitor 220 F; 63 V C10, C11, C15 Murata ceramic chip capacitor 100 nF C12 ATC multilayer ceramic chip capacitor 15 pF [2] C13 ATC multilayer ceramic chip capacitor 0.3 pF [1] R1 chip resistor 33  R2, R3 chip resistor 5.6  [1] American technical ceramics type 100B or capacitor of same quality. [2] American technical ceramics type 180R or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 Remarks [1] [2] © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 14 BLF6G22(LS)-180PN Power LDMOS transistor 9. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q U1 3.30 3.05 2.26 2.01 35.56 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 10-02-02 12-05-02 SOT539A Fig 10. Package outline SOT539A BLF6G22-180PN_22LS-180PN#6 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 14 BLF6G22(LS)-180PN Power LDMOS transistor Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 inches nom 0.01 0.54 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 mm max nom min A b 4.7 11.81 c D D1 0.18 31.55 31.52 E E1 9.5 9.53 e F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.39 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 4.2 11.56 0.10 30.94 30.96 9.3 9.27 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot539b_po European projection Issue date 12-05-02 13-05-24 SOT539B Fig 11. Package outline SOT539B BLF6G22-180PN_22LS-180PN#6 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 14 BLF6G22(LS)-180PN Power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel IMD InterModulation Distortion LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 11. Revision history Document ID Release date BLF6G22-180PN_22LS-180PN#6 20150901 Product data sheet Modifications: Data sheet status Change notice Supersedes - BLF6G22-180PN_22LS-180PNV.5 • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF6G22-180PN_22LS-180PN V.5 20130712 Product data sheet - BLF6G22-180PN_22LS-180PN_4 BLF6G22-180PN_22LS-180PN_4 20100304 Product data sheet - BLF6G22-180PN_22LS-180PN_3 BLF6G22-180PN_22LS-180PN_3 20091211 Objective data sheet - BLF6G22-180PN_2 BLF6G22-180PN_2 20080423 Product data sheet - BLF6G22-180PN_1 BLF6G22-180PN_1 20080221 Preliminary data sheet - BLF6G22-180PN_22LS-180PN#6 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 - © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 14 BLF6G22(LS)-180PN Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLF6G22-180PN_22LS-180PN#6 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 14 BLF6G22(LS)-180PN Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. 13. Contact information For more information, please visit: http://www.ampleon.com BLF6G22-180PN_22LS-180PN#6 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 6 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 14 BLF6G22(LS)-180PN Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF6G22-180PN_22LS-180PN#6