BLF7G22L-160,118

BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2110 to 2170 1300 28 43 18.0 30 32[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.2 Features and benefits        Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G22L-160 (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 BLF7G22LS-160 (SOT502B) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF7G22L-160 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLF7G22LS-160 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 65 V VGS gate-source voltage 0.5 +13 V ID drain current - 36 A Tstg storage temperature 65 +150 C Tj junction temperature - 200 C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 55 W 0.29 K/W BLF7G22L-160_7G22LS-160#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 18 BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 C; unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage Min Typ Max Unit VGS = 0 V; ID = 2.16 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 216 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.5 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 34 - - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS = 10 V; ID = 10.8 A - 20 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 7.56 A - 0.06 -  7. Test information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1; 64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 1300 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 43 W 16.5 18.0 - dB RLin input return loss PL(AV) = 43 W - 15 6.5 dB D drain efficiency PL(AV) = 43 W 27 30 - % ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 43 W - 32 28 dBc Table 8. Application information Mode of operation: 1-carrier W-CDMA; PAR 7.2 dB at 0.01 % probability on CCDF; 3GPP test model 1; 64 PDPCH; f = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 1300 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PARO output peak-to-average ratio Conditions Min Typ Max Unit PL(AV) = 100 W; at 0.01 % probability on CCDF 3.9 4.15 - dB 7.1 Ruggedness in class-AB operation The BLF7G22L-160 and BLF7G22LS-160 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1300 mA; PL = 160 W; f = 2110 MHz. BLF7G22L-160_7G22LS-160#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 18 BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 7.2 2-Carrier W-CDMA 5 MHz 001aan987 22 50 Gp (dB) ηD (%) 20 40 Gp 18 30 (2) (1) 16 20 ηD 14 12 28 33 10 38 43 48 53 PL (dBm) 0 VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 1. Power gain and drain efficiency as function of load power; typical values 001aan988 -10 001aan989 -20 ACPR5M (dBc) ACPR10M (dBc) -20 -30 -30 -40 (1) -40 (1) -50 f - 10 MHz (2) f - 5 MHz (2) -50 f + 10 MHz -60 f + 5 MHz -60 28 33 38 43 -70 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. 33 38 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (1) f = 2110 MHz (2) f = 2170 MHz Fig 2. 28 (2) f = 2170 MHz Adjacent channel power ratio (5 MHz) as a function of load power; typical values Fig 3. Adjacent channel power ratio (10 MHz) as a function of load power; typical values BLF7G22L-160_7G22LS-160#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 18 BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 001aan990 40 001aan991 9 RLin (dB) PAR (dB) 30 (1) 6 (1) (2) 20 3 (2) 10 0 28 33 38 43 0 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. 28 33 38 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (1) f = 2110 MHz (2) f = 2170 MHz (2) f = 2170 MHz Fig 4. 43 Input return loss as function of load power; typical values Fig 5. Peak-to-average power ration as function of load power; typical values 7.3 2-Carrier W-CDMA 10 MHz 001aan992 22 50 ηD (%) Gp (dB) 40 20 Gp 18 30 (2) (1) 20 16 ηD 14 12 28 33 10 38 43 48 53 PL (dBm) 0 VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 6. Power gain and drain efficiency as function of load power; typical values BLF7G22L-160_7G22LS-160#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 18 BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 001aan993 -10 001aan994 -10 ACPR5M (dBc) ACPR10M (dBc) -30 -30 (1) (1) f - 10 MHz (2) f - 5 MHz -50 f + 10 MHz f + 5 MHz -70 28 33 38 43 -70 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. 28 33 38 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (1) f = 2110 MHz (2) f = 2170 MHz (2) f = 2170 MHz Fig 7. (2) -50 Adjacent channel power ratio (5 MHz) as a function of load power; typical values Fig 8. Adjacent channel power ratio (10 MHz) as a function of load power; typical values 7.4 1-Carrier W-CDMA 001aan995 22 50 Gp (dB) ηD (%) 20 40 Gp 18 30 (2) (1) 16 20 ηD 14 12 28 33 10 38 43 48 53 PL (dBm) 0 VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 9. Power gain and drain efficiency as function of load power; typical values BLF7G22L-160_7G22LS-160#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 18 BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 001aan996 -20 001aan997 -40 ACPR5M (dBc) ACPR10M (dBc) -30 -50 -40 (1) -50 f - 5 MHz f - 10 MHz -60 (2) (1) f + 5 MHz -60 (2) f + 10 MHz -70 28 33 38 43 -70 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. 28 33 38 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (1) f = 2110 MHz (2) f = 2170 MHz (2) f = 2170 MHz Fig 10. Adjacent channel power ratio (5 MHz) as a function of load power; typical values Fig 11. Adjacent channel power ratio (10 MHz) as a function of load power; typical values 001aan998 8 PAR (dB) (1) 6 (2) 4 2 0 28 33 38 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 12. Peak-to-average power ration as function of load power; typical values BLF7G22L-160_7G22LS-160#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 18 BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 7.5 IS-95 001aan999 22 50 Gp (dB) ηD (%) 20 40 Gp 18 30 (2) (1) 16 20 14 10 ηD 12 28 33 38 43 48 53 PL (dBm) 0 VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 13. Power gain and drain efficiency as function of load power; typical values 001aao000 -20 ACPR885k (dBc) 001aao001 -50 ACPR1980k (dBc) -30 -60 -40 (1) -70 (2) -50 (3) (4) (1) -60 -80 (2) (3) (4) -70 28 33 38 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. -90 28 33 38 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz; f + 885 kHz (1) f = 2110 MHz; f + 1980 kHz (2) f = 2170 MHz; f + 885 kHz (2) f = 2170 MHz; f + 1980 kHz (3) f = 2110 MHz; f  885 kHz (3) f = 2110 MHz; f  1980 kHz (4) f = 2170 MHz; f  885 kHz (4) f = 2170 MHz; f  1980 kHz Fig 14. Adjacent channel power ratio (5 MHz) as a function of load power; typical values Fig 15. Adjacent channel power ratio (10 MHz) as a function of load power; typical values BLF7G22L-160_7G22LS-160#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 18 BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 001aao002 12 PAR (dB) 8 (1) (2) 4 0 28 33 38 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 16. Peak-to-average power ration as function of load power; typical values 7.6 CW 001aao003 22 60 ηD (%) Gp (dB) (2) 20 48 (1) Gp 36 18 16 24 ηD 12 14 12 38 44 50 PL (dBm) 56 0 VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 17. Power gain and drain efficiency as function of load power; typical values BLF7G22L-160_7G22LS-160#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 18 BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 7.7 CW-pulsed 001aao004 22 Gp (dB) 60 ηD (%) (2) 20 48 (1) Gp 36 18 16 24 ηD 12 14 12 38 44 50 PL (dBm) 56 0 VDS = 28 V; IDq = 1300 mA; tp = 0.10 ms;  = 10 %. (1) f = 2110 MHz (2) f = 2170 MHz Fig 18. Power gain and drain efficiency as function of load power; typical values BLF7G22L-160_7G22LS-160#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 18 BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 7.8 Test circuit 50.0 mm 50.0 mm C9 C11 C1 C3 R1 C13 C15 C6 C5 60.0 mm C8 BLF7G22L(S)-160 Input Rev 01 60.0 mm BLF7G22L-160 Output Rev 01 001aao005 Printed-Circuit Board (PCB): Taconic RF35; r = 3.5; thickness = 0.76 mm; thickness copper plating = 35 m. See Table 9 for a list of components. Fig 19. Component layout for class-AB production test circuit Table 9. List of components For test circuit see Figure 19. Component Description Value C1, C5, C8, C9 multilayer ceramic chip capacitor 68 pF [1] C3, C11 multilayer ceramic chip capacitor 820 pF [2] C6, C13 multilayer ceramic chip capacitor 10 F [3] C15 electrolytic capacitor 470 F; 63 V R1 SMD resistor 12  [1] American Technical Ceramics type 800B or capacitor of same quality. [2] American Technical Ceramics type 100A or capacitor of same quality. [3] TDK or capacitor of same quality. BLF7G22L-160_7G22LS-160#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 Remarks Philips 1206 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 18 BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 7.9 Impedance information Table 10. Typical impedance Typical values unless otherwise specified. f ZS ZL MHz   2050 1.39 j4.13 1.41  j3.80 2080 1.67  j3.93 1.38 j3.63 2110 2.01  j3.89 1.35j3.45 2140 2.28j4.09 1.33 j3.28 2170 2.27  j4.47 1.31  j3.12 2200 1.92j4.76 1.28 j2.95 2230 1.42  j4.75 1.26 j2.79 drain ZL gate ZS 001aaf059 Fig 20. Definition of transistor impedance BLF7G22L-160_7G22LS-160#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 18 BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 8. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION D E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 12-05-02 SOT502A Fig 21. Package outline SOT502A BLF7G22L-160_7G22LS-160#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 18 BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Earless flanged ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION D E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 07-05-09 12-05-02 SOT502B Fig 22. Package outline SOT502B BLF7G22L-160_7G22LS-160#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 14 of 18 BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 9. Abbreviations Table 11. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 10. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF7G22L-160_7G22LS-160#3 20150901 Product data sheet - BLF7G22L-160_7G22LS-160 v.2.1 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF7G22L-160_7G22LS-160 v.2.1 20111102 Product data sheet - BLF7G22L-160_7G22LS-160 v.2 BLF7G22L-160_7G22LS-160 v.2 20111020 Product data sheet - BLF7G22L-160_7G22LS-160 v.1 BLF7G22L-160_7G22LS-160 v.1 20110427 Preliminary data sheet - BLF7G22L-160_7G22LS-160#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 - © Ampleon The Netherlands B.V. 2015. All rights reserved. 15 of 18 BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. BLF7G22L-160_7G22LS-160#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 16 of 18 BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. 12. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLF7G22L-160_7G22LS-160#3 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 17 of 18 BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 2-Carrier W-CDMA 5 MHz . . . . . . . . . . . . . . . . 4 2-Carrier W-CDMA 10 MHz . . . . . . . . . . . . . . . 5 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 IS-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 CW-pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Impedance information . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF7G22L-160_7G22LS-160#3