BLF6G22L-40P,118

BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 410 28 13.5 19 30 30 [2] 410 28 5 20.3 18.3 34.9 [2] 2110 to 2170 410 28 15 19 32 37 [3] 1805 to 1880 [1] 410 28 5 20.5 18.0 42.3 [3] 2110 to 2170 1805 to 1880 1-carrier W-CDMA [1] [1] The performance is tested on the Class AB demo board as depicted in Figure 11. [2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. [3] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.2 Features and benefits         Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifier for base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency band  RF driver amplifier in the 1805 MHz to 1880 MHz frequency band BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G22L-40P (SOT1121A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 3 [1] source 5 5 3 4 4 2 sym117 BLF6G22LS-40P (SOT1121B) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 3 5 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G22L-40P - flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1121A BLF6G22LS-40P - earless flanged LDMOST ceramic package; 4 leads SOT1121B 4. Limiting values Table 4. Limiting values (2 sections combined) In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V ID drain current - 16 A Tstg storage temperature 65 +150 C Tj junction temperature - 200 C BLF6G22L-40P_6G22LS-40P#2 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 16 BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 40 W 0.7 K/W 6. Characteristics Table 6. Characteristics (per section) Tj = 25 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.4 mA 65 - - V V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 40 mA 1.4 1.9 2.4 IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 6 7 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 200 nA gfs forward transconductance VDS = 10 V; ID = 2.0 A 1.8 2.9 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 1.4 A 0.14 0.37 0.57  7. Application information Table 7. Application information (2 sections combined) Mode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1; 64 DPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 410 mA; Tcase = 25 C; in a class-AB production test circuit. Symbol Parameter Conditions power gain Gp Min Typ Max Unit PL(AV) = 13.5 W [1] 17.8 19 - - 15 9 dB % 30 27 dBc 39 36 dBc input return loss PL(AV) = 13.5 W D drain efficiency PL(AV) = 13.5 W [1] 26.5 30 ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 13.5 W [1] - ACPR10M adjacent channel power ratio (10 MHz) PL(AV) = 13.5 W [1] - [1] dB - RLin [1] In production, all testing are only performed at 2110 MHz to 2170 MHz frequency band. 7.1 Ruggedness in class-AB operation The BLF6G22L-40P and BLF6G22LS-40P are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 410 mA; PL = 40 W (CW); f = 2110 MHz. The BLF6G22L-40P and BLF6G22LS-40P are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 410 mA; PL = 40 W (CW pulse, 10 %); f = 1842 MHz. BLF6G22L-40P_6G22LS-40P#2 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 16 BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor 7.2 CW aaa-000328 30 Gp (dB) (1) (2) 60 ηD (%) (3) 40 20 Gp 20 10 (1) (2) (3) ηD 0 0 28 36 44 52 PL (dBm) VDS = 28 V; IDq = 410 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 1. Power gain and drain efficiency as function of load power; typical values BLF6G22L-40P_6G22LS-40P#2 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 16 BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor 7.3 IS-95 Single carrier IS-95; PAR = 9.7 dB at 0.01 % probability on the CCDF. aaa-000329 22 Gp (dB) (1) (2) ηD (%) (3) 20 40 aaa-000330 -20 50 ACPR885 (dBc) -20 ACPR1980 (dBc) -40 Gp 18 -40 ACPR885 30 (1) 16 (2) (3) 20 -60 ηD 14 ACPR1980 -60 10 (1) (2) (3) (1) (2) (3) 12 -80 0 28 32 36 40 44 48 PL (dBm) -80 28 VDS = 28 V; IDq = 410 mA. 32 40 44 48 PL (dBm) VDS = 28 V; IDq = 410 mA. (1) f = 2110 MHz (1) f = 2110 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2170 MHz (3) f = 2170 MHz Fig 2. 36 Single carrier IS-95 power gain and drain efficiency as function of output power; typical values Fig 3. Single carrier IS-95 adjacent channel power ratio as a function of output power; typical values BLF6G22L-40P_6G22LS-40P#2 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 16 BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor 7.4 1-carrier W-CDMA Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. aaa-000331 22 aaa-000332 -10 72 -10 Gp Gp (dB) ACPR5M (dBc) ηD (%) 18 ACPR10M (dBc) ACPR5M -30 48 -30 (1) (2) (3) (1) (2) (3) (1) (2) (3) 14 -50 24 ηD 10 0 28 32 36 -50 40 -70 44 48 PL (dBm) -70 28 VDS = 28 V; IDq = 410 mA. 32 36 40 44 48 PL (dBm) VDS = 28 V; IDq = 410 mA. (1) f = 2112.5 MHz (1) f = 2112.5 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2167.5 MHz (3) f = 2167.5 MHz Fig 4. ACPR10M (1) (2) (3) 1-carrier W-CDMA power gain and drain efficiency as function of output power; typical values Fig 5. 1-carrier W-CDMA adjacent channel power ratio as a function of output power; typical values aaa-000333 8 PAR (dB) (1) (2) (3) 6 4 2 0 28 32 36 40 44 48 PL (dBm) VDS = 28 V; IDq = 410 mA. (1) f = 2112.5 MHz (2) f = 2140 MHz (3) f = 2167.5 MHz Fig 6. 1-carrier W-CDMA power gain and drain efficiency as function of output power; typical values BLF6G22L-40P_6G22LS-40P#2 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 16 BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor 7.5 2-carrier W-CDMA Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. aaa-000334 35 Gp (dB) 30 aaa-000335 -10 70 ηD (%) 60 ACPR5M (dBc) ACPR10M (dBc) 50 25 ACPR5M -30 Gp 20 -10 -30 40 (1) (1) (2) (3) 15 (2) (3) ACPR10M 30 -50 10 -50 20 ηD (1) (2) (3) 5 10 (1) (2) (3) 0 28 32 36 0 44 48 PL (dBm) 40 -70 -70 28 VDS = 28 V; IDq = 410 mA. 32 40 44 48 PL (dBm) VDS = 28 V; IDq = 410 mA. (1) f = 2115 MHz (1) f = 2115 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2165 MHz (3) f = 2165 MHz Fig 7. 36 2-carrier W-CDMA power gain and drain efficiency as function of output power; typical values Fig 8. 2-carrier W-CDMA adjacent channel power ratio as a function of output power; typical values aaa-000336 10 PAR (dB) 8 (1) (2) (3) 6 4 2 0 28 32 36 40 44 48 PL (dBm) VDS = 28 V; IDq = 410 mA. (1) f = 2115 MHz (2) f = 2140 MHz (3) f = 2165 MHz Fig 9. 2-carrier W-CDMA peak-to-average power ratio as function of output power; typical values BLF6G22L-40P_6G22LS-40P#2 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 16 BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor 8. Test information 50.0 mm C3 50.0 mm C1 R1 C13 C9 C11 C15 C6 C5 C8 60.0 mm C10 R2 C12 C14 C2 C4 aaa-000337 Printed-Circuit Board (PCB): Rogers RO4350; r = 3.5 F/m; thickness = 0.762 mm; thickness copper plating = 35 m. The vias can be as a reference to place components. The above layout shows the test circuit used to measure the devices in production. A more appropriate application demonstration for specific customer needs can be provided. See Table 8 for list of components. Fig 10. Component layout Table 8. List of components See Figure 10 for component layout. Component Description Value Remarks C1, C2, C9, C10 multilayer ceramic chip capacitor 68 pF [1] C3, C4, C11, C12 multilayer ceramic chip capacitor 820 pF [2] C5, C8 multilayer ceramic chip capacitor 4.7 pF [1] C6, C14, C15 multilayer ceramic chip capacitor 10 F C13 electrolytic capacitor 470 F; 63 V R1, R2 chip resistor 12  [1] American Technical Ceramics type 800B or capacitor of same quality. [2] American Technical Ceramics type 100A or capacitor of same quality. BLF6G22L-40P_6G22LS-40P#2 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 1 September 2015 TDK Philips 1206 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 16 BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor U1 L1 R5 R10 D1 R6 R3 R9 VR1 R2 Q1 R7 C5 C4 C8 C18 R1 R4 C1 R13 L2 C2 C3 R8 C12 C13 C14 R11 C6 R12 C19 C17 C7 C15 C16 C20 C9 C10 C11 aaa-000656 Printed-Circuit Board (PCB): Rogers RO4350; r = 3.5 F/m; thickness = 0.762 mm; thickness copper plating = 35 m. The vias can be as a reference to place components. The above layout shows the test circuit used to measure the devices in production. A more appropriate application demonstration for specific customer needs can be provided. See Table 9 for list of components. Fig 11. 1.8 GHz Demo board layout Table 9. List of components See Figure 11 for component layout. Component Description Value Remarks C1, C2, C5, C8 multilayer ceramic chip capacitor 100 nF Murata C3, C4, C11, C14 multilayer ceramic chip capacitor 1 F Murata C6 multilayer ceramic chip capacitor 47 pF ATC C7 multilayer ceramic chip capacitor 10 pF ATC C9, C12 multilayer ceramic chip capacitor 12 pF ATC C10, C13 multilayer ceramic chip capacitor 330 pF Murata C15, C16 multilayer ceramic chip capacitor 1.5 pF ATC C17 multilayer ceramic chip capacitor 10 pF ATC C18 electrolytic capacitor 2200 F, 50 V Panasonic C19, C20 multilayer ceramic chip capacitor 1 pF ATC BLF6G22L-40P_6G22LS-40P#2 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 16 BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor Table 9. List of components See Figure 11 for component layout. Component Description Value Remarks L1, L2 ferrite bead 5A Fair Rite R1 chip resistor 500  Vishay Dale R2, R5 chip resistor 1.1 k Vishay Dale R3, R6 chip resistor 432  Vishay Dale R4, R11 chip resistor 9.1  Vishay Dale R9 chip resistor 2 k Vishay Dale R10 chip resistor 75  Vishay Dale R12 chip resistor 1.5  Vishay Dale VR1 potentiometer 200  Bourns U1 voltage regulator BLF6G22L-40P_6G22LS-40P#2 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 1 September 2015 NJR © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 16 BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1121A D A F D1 U1 B q C H1 c 2 1 p U2 H E1 E 5 A w1 3 A B 4 b w2 C Q e 0 5 Dimensions Unit(1) mm 10 mm scale A max 4.75 nom min 3.45 b 3.94 c D D1 e 0.18 20.02 19.96 E E1 F H H1 p 9.53 9.53 1.14 19.94 12.83 3.38 Q(2) 0.10 19.61 19.66 U1 U2 33.91 9.65 1.45 max 0.187 0.155 0.007 0.788 0.786 0.375 0.375 0.045 0.785 0.505 0.133 0.067 inches nom 0.35 min 0.136 0.145 0.004 0.772 0.774 0.365 0.365 0.035 0.745 0.495 0.123 0.057 1.345 0.39 1.1 0.01 0.02 1.335 0.38 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version References IEC JEDEC JEITA w2 0.25 0.51 27.94 9.27 9.27 0.89 18.92 12.57 3.12 w1 34.16 9.91 1.70 8.89 3.68 q sot1121a_po European projection Issue date 09-10-12 10-02-02 SOT1121A Fig 12. Package outline SOT1121A BLF6G22L-40P_6G22LS-40P#2 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 16 BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor Earless flanged ceramic package; 4 leads SOT1121B D A F 5 D1 D U1 w2 H1 H c D 2 1 U2 E1 E 4 3 b y w3 e Q 0 5 10 mm scale Dimensions Unit(1) mm A max 4.75 nom min 3.45 b 3.94 c D D1 e 0.18 20.02 19.96 E E1 F H H1 Q U1 U2 w2 w3 9.53 9.53 1.14 19.94 12.83 1.70 20.70 9.91 0.51 0.25 0.25 8.89 3.68 0.08 19.61 19.66 9.27 9.27 0.89 18.92 12.57 1.45 20.45 9.65 max 0.187 0.155 0.007 0.788 0.786 0.375 0.375 0.045 0.785 0.505 0.067 0.815 0.39 0.02 0.01 0.35 inches nom min 0.136 0.145 0.003 0.772 0.774 0.365 0.365 0.035 0.745 0.495 0.057 0.805 0.38 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version y References IEC JEDEC JEITA 0.01 sot1121b_po European projection Issue date 09-12-14 12-06-07 SOT1121B Fig 13. Package outline SOT1121B BLF6G22L-40P_6G22LS-40P#2 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 16 BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge IS-95 Interim Standard 95 LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G22L-40P_6G22LS-40P#2 20150901 Product data sheet - BLF6G22L-40 P_6G22LS-40 P v.1 Modifications: BLF6G22L-40P_6G22LS-40P v.1 • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. 20110922 Product data sheet BLF6G22L-40P_6G22LS-40P#2 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 1 September 2015 - - © Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 16 BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. BLF6G22L-40P_6G22LS-40P#2 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 14 of 16 BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLF6G22L-40P_6G22LS-40P#2 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 15 of 16 BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 IS-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF6G22L-40P_6G22LS-40P#2