BLF8G20LS-260A
Power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
260 W LDMOS packaged asymmetric Doherty power transistor for base station
applications at frequencies from 1805 MHz to 1880 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.
Test signal
1-carrier W-CDMA[1]
D
ACPR
(dB)
(%)
(dBc)
15.9
45.5
29[2]
f
VDS
PL(AV)
Gp
(MHz)
(V)
(W)
1805 to 1880
28
50
[1]
VDS = 28 V; IDq = 750 mA (main); VGS(amp)peak = 0.80 V.
[2]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 9.65 dB at 0.01% probability on CCDF per carrier.
1.2 Features and benefits
Excellent ruggedness
High-efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (1805 MHz to 1880 MHz)
Asymmetric design to achieve optimum efficiency across the band
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and GSM multi carrier applications in
the 1805 MHz to 1880 MHz frequency range
BLF8G20LS-260A
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain1 (main)
2
drain2 (peak)
3
gate1 (main)
4
gate2 (peak)
5
Simplified outline
1
Graphic symbol
2
1
5
3
3
4
5
4
[1]
source
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
BLF8G20LS-260A
Name Description
Version
-
SOT539B
earless flanged balanced ceramic package; 4 leads
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Min
Max
Unit
drain-source voltage
-
65
V
VGS(amp)main
main amplifier gate-source voltage
0.5
+13
V
VGS(amp)peak
peak amplifier gate-source voltage
0.5
+13
V
Tstg
storage temperature
65
+150
C
-
225
C
Typ
Unit
PL = 50 W
0.36
K/W
PL = 200 W
0.29
K/W
[1]
junction temperature
Tj
[1]
Conditions
Continuous use at maximum temperature will affect reliability.
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Rth(j-c)
BLF8G20LS-260A#5
Product data sheet
Conditions
thermal resistance from junction
to case
VDS = 28 V; IDq = 750 mA (main);
VGS(amp)peak = 0.80 V; Tcase = 80 C
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
2 of 15
BLF8G20LS-260A
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
Main device
VGS = 0 V; ID = 1.44 mA
65
-
-
V
VGS(th)
V(BR)DSS drain-source breakdown voltage
gate-source threshold voltage
VDS = 10 V; ID = 144 mA
1.5
1.9
2.3
V
VGSq
gate-source quiescent voltage
VDS = 28 V; ID = 750 mA
1.7
2.1
2.5
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
2.8
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
27
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
280
nA
gfs
forward transconductance
VDS = 10 V; ID = 5.04 A
-
9.70 -
S
RDS(on)
drain-source on-state resistance
VGS = VGS(th) + 3.75 V;
ID = 5.04 A
-
102
166
m
VGS = 0 V; ID = 2.2 mA
65
-
-
V
Peak device
V(BR)DSS drain-source breakdown voltage
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 220 mA
1.5
1.9
2.3
V
VGSq
gate-source quiescent voltage
VDS = 28 V; ID = 1200 mA
1.7
2.1
2.5
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
2.8
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
41
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
280
nA
gfs
forward transconductance
VDS = 10 V; ID = 7.70 A
-
14.9 -
S
RDS(on)
drain-source on-state resistance
VGS = VGS(th) + 3.75 V;
ID = 7.7 A
-
66
m
112
Table 7.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 9.65 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 1 - 64 DPCH; f1 = 1810 MHz; f2 = 1875 MHz; RF performance at VDS = 28 V;
IDq = 750 mA (main); VGS(amp)peak = 0.80 V; Tcase = 25 C; unless otherwise specified; in an
asymmetrical Doherty production test circuit at 1805 MHz to 1880 MHz.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL(AV) = 50 W
14.7
15.9
-
dB
RLin
input return loss
PL(AV) = 50 W
-
11
7
dB
D
drain efficiency
PL(AV) = 50 W
40
45.5
-
%
ACPR
adjacent channel power ratio
PL(AV) = 50 W
-
29
24
dBc
Table 8.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 9.65 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 1 - 64 DPCH; f = 1877.5 MHz; RF performance at VDS = 28 V;
IDq = 750 mA (main); VGS(amp)peak = 0.80 V; Tcase = 25 C; unless otherwise specified; in an
asymmetrical Doherty production test circuit at 1805 MHz to 1880 MHz.
Symbol Parameter
BLF8G20LS-260A#5
Product data sheet
Min
Typ
Max Unit
PARO
output peak-to-average ratio PL(AV) = 60 W
Conditions
6.4
7.0
-
dB
PL(M)
peak output power
257
300
-
W
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
3 of 15
BLF8G20LS-260A
Power LDMOS transistor
7. Test information
7.1 Ruggedness in Doherty operation
The BLF8G20LS-260A is capable of withstanding a load mismatch corresponding to a
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 750 mA (main); VGS(amp)peak = 0.80 V; PL = 200 W (CW); f = 1805 MHz to
1880 MHz.
7.2 Impedance information
Table 9.
Typical impedance of main device
Measured load-pull data of main device; IDq = 750 mA (main); VDS = 28 V.
f
ZS[1]
ZL[1]
PL[2]
D[2]
Gp[2]
(MHz)
()
()
(W)
(%)
(dB)
Maximum power load
1810
1.0 j3.7
1.4 j4.1
172
56.3
15.1
1840
1.0 j3.9
1.4 j3.9
167
55.9
15.1
1880
1.1 j4.0
1.4 j3.6
162
57.4
15.3
Maximum drain efficiency load
1810
1.0 j3.7
2.6 j2.4
114
67
17.5
1840
1.0 j3.9
2.4 j2.8
126
66
17.3
1880
1.1 j4.0
2.3 j2.7
120
66
17.6
[1]
ZS and ZL defined in Figure 1.
[2]
at 3 dB gain compression.
Table 10. Typical impedance of peak device
Measured load-pull data of peak device; IDq = 1200 mA (peak); VDS = 28 V.
f
ZS[1]
ZL[1]
PL[2]
D[2]
Gp[2]
(MHz)
()
()
(W)
(%)
(dB)
Maximum power load
BLF8G20LS-260A#5
Product data sheet
1810
0.8 j3.7
1.8 j4.5
240
54
15.3
1840
0.7 j3.9
1.8 j4.3
238
56
15.4
1880
0.7 j4.0
1.7 j4.0
233
57
15.8
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
4 of 15
BLF8G20LS-260A
Power LDMOS transistor
Table 10. Typical impedance of peak device …continued
Measured load-pull data of peak device; IDq = 1200 mA (peak); VDS = 28 V.
f
ZS[1]
ZL[1]
PL[2]
D[2]
Gp[2]
(MHz)
()
()
(W)
(%)
(dB)
Maximum drain efficiency load
1810
0.8 j3.7
2.6 j2.6
176
67
18.1
1840
0.7 j3.9
2.4 j2.4
162
66
18.3
1880
0.7 j4.0
2.3 j2.5
163
65
18.4
[1]
ZS and ZL defined in Figure 1.
[2]
at 3 dB gain compression.
drain
ZL
gate
ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Recommended impedances for Doherty design
Table 11. Typical impedance of main device at 1 : 1 load
Measured load-pull data of main device; IDq = 750 mA (main); VDS = 28 V.
f
ZS[1]
ZL[1]
PL[2]
D[3]
Gp[3]
(MHz)
()
()
(dBm)
(%)
(dB)
1810
1.0 j3.7
1.4 j4.1
52.38
33.8
18.0
1840
1.0 j3.9
1.4 j3.8
52.23
34.3
18.1
1880
1.1 j4.0
1.3 j3.6
52.08
35.0
18.3
[1]
ZS and ZL defined in Figure 1.
[2]
at 3 dB gain compression.
[3]
at PL(AV) = 47 dBm.
Table 12. Typical impedance of main device at 1 : 2.5 load
Measured load-pull data of main device; IDq = 750 mA (main); VDS = 28 V.
BLF8G20LS-260A#5
Product data sheet
f
ZS[1]
ZL[1]
PL[2]
D[3]
Gp[3]
(MHz)
()
()
(dBm)
(%)
(dB)
1810
1.0 j3.7
2.4 j2.6
50.83
47.3
20.2
1840
1.0 j3.9
2.8 j3.0
50.47
50.2
20.8
1880
1.1 j4.0
3.1 j2.7
50.25
50.9
21.2
[1]
ZS and ZL defined in Figure 1.
[2]
at 3 dB gain compression.
[3]
at PL(AV) = 47 dBm.
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
5 of 15
BLF8G20LS-260A
Power LDMOS transistor
Table 13. Typical impedance of peak device at 1 : 1 load
Measured load-pull data of peak device; IDq = 1200 mA (peak); VDS = 28 V.
ZS[1]
f
ZL[1]
D[2]
PL[2]
Gp[2]
(MHz)
()
()
(dBm)
(%)
(dB)
1810
0.8 j3.7
2.2 j4.3
53.70
59.1
16.1
1840
0.7 j3.9
2.1 j4.0
53.69
61.2
16.3
1880
0.7 j4.0
2.1 j3.7
53.43
62.0
16.8
[1]
ZS and ZL defined in Figure 1.
[2]
at 3 dB gain compression.
Table 14.
Off-state impedances of peak device
f
Zoff
(MHz)
()
1810
0.5 j0.1
1840
0.4 + j0.5
1880
0.4 + j4.0
7.4 Test circuit
40 mm
40 mm
R17
C1
C11
L5
R28
C17
L3
C16 C18
C19
+
C20
-
C21
C13
C14
C22
R30
C31
80 mm
C30
X1
C32
R27
C10
C23
C15
C24
C2
C12
L6
R18
C26
C29
C27
+
R29
C28
-
L4
aaa-004804
Printed-Circuit Board (PCB): Rogers RO4350; thickness = 0.508 mm.
See Table 15 for list of components.
Fig 2.
BLF8G20LS-260A#5
Product data sheet
Component layout for test circuit
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
6 of 15
BLF8G20LS-260A
Power LDMOS transistor
Table 15. List of components
For test circuit, see Figure 2.
Component
Description
Value
C1, C2, C18, C29
multilayer ceramic chip capacitor
Remarks
1 F
Murata
C11, C12, C14, C15, C16, multilayer ceramic chip capacitor
C22, C23, C25, C31
30 pF
ATC100B
C13
0.5 pF
ATC800B
multilayer ceramic chip capacitor
C17, C26
multilayer ceramic chip capacitor
100 nF
Murata
C19, C27, C30, C32
multilayer ceramic chip capacitor
10 F
Murata
C20, C28
electrolytic capacitor
2200 F
Panasonic
C21
multilayer ceramic chip capacitor
0.3 pF
ATC800B
C24
multilayer ceramic chip capacitor
1.2 pF
ATC800B
R17, R18
resistor
5.1
SMD1206
R27
resistor
50
EMC
R28, R29
resistor
9.1
Vishay Dale
R30
resistor
5.6
SMD1206
L3, L4
ferrite bead
-
Fair Rite 2743019447
L5, L6
inductor
12 nH
Coilcraft
X1
hybrid coupler
-
Anaren X3C19P1-03S
7.5 Graphical data
7.5.1 CW pulsed
aaa-004802
17
60
ηD
Gp
(dB)
16
ηD
(%)
Gp
(dB)
16
15
40
15
14
30
14
20
13
10
12
13
11
0
50
100
150
200
250
300
PL (W)
0
350
40
(1)
(2)
(3)
30
10
11
0
38
VDS = 28 V; IDq = 746 mA; VGS(amp)peak = 0.80 V.
42
(2) f = 1842.5 MHz
(2) f = 1842.5 MHz
(3) f = 1880 MHz
(3) f = 1880 MHz
BLF8G20LS-260A#5
Product data sheet
46
50
54
PL (dBm)
58
VDS = 28 V; IDq = 746 mA; VGS(amp)peak = 0.80 V.
(1) f = 1805 MHz
Power gain and drain efficiency as function of
output power; typical values
20
Gp
(1) f = 1805 MHz
Fig 3.
ηD
(%)
50
Gp
12
60
ηD
50
(1)
(2)
(3)
aaa-004805
17
Fig 4.
Power gain and drain efficiency as function of
output power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
7 of 15
BLF8G20LS-260A
Power LDMOS transistor
aaa-004806
-2
RLin
(dB)
-6
-10
(1)
(2)
-14
(3)
-18
38
42
46
50
54
PL (dBm)
58
VDS = 28 V; IDq = 746 mA; VGS(amp)peak = 0.80 V.
(1) f = 1805 MHz
(2) f = 1842.5 MHz
(3) f = 1880 MHz
Fig 5.
Input return loss as a function of output power; typical values
7.5.2 2-Carrier W-CDMA
2-carrier W-CDMA; PAR = 7.5 dB per carrier at 0.01 % probability on the CCDF;
3GPP test model with 64 DPCH (46 % clipping).
aaa-004807
17
Gp
(dB)
60
ηD
(%)
Gp
aaa-004808
17
60
Gp
(dB)
ηD
(%)
Gp
15
(1)
(2)
(3)
13
ηD
11
50
15
50
40
13
40
30
11
30
(1)
(2)
(3)
ηD
9
0
20
40
60
80
100
120
PL (W)
20
140
9
20
38
VDS = 28 V; IDq = 746 mA; VGS(amp)peak = 0.80 V.
40
42
(1) f = 1805 MHz
(2) f = 1842.5 MHz
(2) f = 1842.5 MHz
(3) f = 1877.5 MHz
(3) f = 1880 MHz
Power gain and drain efficiency as function of
output power; typical values
BLF8G20LS-260A#5
Product data sheet
46
48
50
PL (dBm)
52
VDS = 28 V; IDq = 746 mA; VGS(amp)peak = 0.80 V.
(1) f = 1807.5 MHz
Fig 6.
44
Fig 7.
Power gain and drain efficiency as function of
output power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
8 of 15
BLF8G20LS-260A
Power LDMOS transistor
aaa-004809
0
aaa-007000
-10
ACPR5M
(dBc)
RLin
(dB)
-4
-20
-8
-30
(1)
(2)
(3)
ACPR5M
-10
ACPR10M
(dBc)
-20
-30
ACPR10M
(1)
(2)
-12
(1)
(2)
(3)
-40
-40
(3)
-16
-50
38
40
42
44
46
48
50
52
PL (dBm)
54
0
VDS = 28 V; IDq = 746 mA; VGS(amp)peak = 0.80 V.
20
40
80
100
120
PL (W)
-50
140
VDS = 28 V; IDq = 746 mA; VGS(amp)peak = 0.80 V.
(1) f = 1807.5 MHz
(1) f = 1807.5 MHz
(2) f = 1842.5 MHz
(2) f = 1842.5 MHz
(3) f = 1877.5 MHz
(3) f = 1877.5 MHz
Fig 8.
60
Input return loss as a function of output
power; typical values
Fig 9.
Adjacent channel power ratio (5 MHz) and
Adjacent channel power ratio (10 MHz) as
function of output power; typical values
7.5.3 1-Carrier W-CDMA
1-carrier W-CDMA; PAR = 9.65 dB per carrier at 0.01 % probability on the CCDF;
3GPP test model with 64 DPCH (no clipping).
aaa-006997
17
Gp
(dB)
60
ηD
(%)
Gp
15
(2)
(2)
(1)
(1)
13
9
0
50
-20
40
-30
30
-40
20
120
-50
(1)
(2)
ηD
11
aaa-006998
-10
ACPR5M
(dBc)
20
40
60
80
100
PL (W)
VDS = 28 V; IDq = 746 mA; VGS(amp)peak = 0.80 V.
0
20
(1) f = 1810 MHz
(2) f = 1875 MHz
(2) f = 1875 MHz
BLF8G20LS-260A#5
Product data sheet
60
80
100
PL (W)
120
VDS = 28 V; IDq = 746 mA; VGS(amp)peak = 0.80 V.
(1) f = 1810 MHz
Fig 10. Power gain and drain efficiency as function of
output power; typical values
40
Fig 11. Adjacent channel power ratio (5 MHz) as a
function of output power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
9 of 15
BLF8G20LS-260A
Power LDMOS transistor
aaa-006999
0
RLin
(dB)
-4
-8
(1)
(2)
-12
-16
0
20
40
60
80
100
PL (W)
120
VDS = 28 V; IDq = 746 mA; VGS(amp)peak = 0.80 V.
(1) f = 1810 MHz
(2) f = 1875 MHz
Fig 12. Input return loss as a function of output power; typical values
BLF8G20LS-260A#5
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
10 of 15
BLF8G20LS-260A
Power LDMOS transistor
8. Package outline
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D1
D
U1
H1
w2
1
c
D
2
E1
U2
H
E
L
3
4
w3
b
Q
e
0
5
10 mm
scale
Dimensions
Unit(1)
w2
w3
0.25
0.25
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
0.069 0.674 1.005 0.137 0.089 1.275 0.405
inches nom
0.01
0.54
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
0.01
mm
max
nom
min
A
b
4.7
11.81
c
D
D1
0.18 31.55 31.52
E
E1
9.5
9.53
e
F
H
H1
L
Q
U1
U2
1.75 17.12 25.53 3.48
2.26 32.39 10.29
1.50 16.10 25.27 2.97
2.01 32.13 10.03
13.72
4.2
11.56
0.10 30.94 30.96
9.3
9.27
Note
1. millimeter dimensions are derived from the original inch dimensions.
Outline
version
References
IEC
JEDEC
JEITA
sot539b_po
European
projection
Issue date
12-05-02
13-05-24
SOT539B
Fig 13. Package outline SOT539B
BLF8G20LS-260A#5
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
11 of 15
BLF8G20LS-260A
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 16.
Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
ESD
ElectroStatic Discharge
GSM
Global System for Mobile communications
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
PAR
Peak-to-Average Ratio
SMD
Surface Mounted Device
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
11. Revision history
Table 17.
Revision history
Document ID
Release date
Data sheet status
BLF8G20LS-260A#5
20150901
Product data sheet
Modifications:
Change notice
Supersedes
BLF8G20LS-260A v.4
•
The format of this document has been redesigned to comply with the new identity guidelines
of Ampleon.
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Legal texts have been adapted to the new company name where appropriate.
BLF8G20LS-260A v.4
20130712
Product data sheet
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BLF8G20LS-260A v.3
BLF8G20LS-260A v.3
20130501
Product data sheet
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BLF8G20LS-260A v.2
BLF8G20LS-260A v.2
20121109
Preliminary data sheet
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BLF8G20LS-260A v.1
BLF8G20LS-260A v.1
20120913
Objective data sheet
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BLF8G20LS-260A#5
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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BLF8G20LS-260A
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF8G20LS-260A#5
Product data sheet
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13. Contact information
For more information, please visit:
http://www.ampleon.com
BLF8G20LS-260A#5
Product data sheet
For sales office addresses, please visit:
http://www.ampleon.com/sales
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
14 of 15
BLF8G20LS-260A
Power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.5
7.5.1
7.5.2
7.5.3
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4
Ruggedness in Doherty operation . . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 4
Recommended impedances for Doherty design 5
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7
CW pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 8
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Handling information. . . . . . . . . . . . . . . . . . . . 12
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLF8G20LS-260A#5
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