BLF8G20LS-140VU

BLF8G20LS-140V; BLF8G20LS-140GV Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal 2-carrier W-CDMA [1] f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 1805 to 1880 900 28 35 18.5 32 30 [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing. 1.2 Features and benefits           Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Decoupling leads to enable improved video bandwidth (150 MHz typical) Designed for broadband operation (1805 MHz to 1990 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to 1990 MHz frequency range BLF8G20LS-140(G)V Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF8G20LS-140V (SOT1244B) 1 drain 2 gate 4 1 1 5 [1] 3 source 4 decoupling lead 5 decoupling lead 6 n.c. 7 n.c. 4,5 6,7 2 3 3 aaa-003619 6 2 7 BLF8G20LS-140GV (SOT1244C) 1 drain 2 gate 3 source 4 decoupling lead 5 decoupling lead 6 n.c. 7 n.c. [1] 4 1 5 1 4,5 6,7 [1] 2 3 aaa-003619 6 7 2 3 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF8G20LS-140V - earless flanged ceramic package; 6 leads SOT1244B BLF8G20LS-140GV - earless flanged ceramic package; 6 leads SOT1244C 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C - 225 C Tj [1] BLF8G20LS-140V_20LS-140GV#3 Product data sheet Conditions junction temperature [1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 17 BLF8G20LS-140(G)V Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 35 W 0.4 K/W 6. Characteristics Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.8 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 180 mA 1.5 1.8 2.3 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 900 mA 1.6 2 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 33 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 gfs forward transconductance VDS = 10 V; ID = 9 A - 13.35 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 6.3 A - 0.08  - nA Table 7. RF characteristics Test signal: 2-carrier W-CDMA; 3GPP test model 1 with 64 DPCH; PAR = 8.4 dB at 0.01 % probability on the CCDF; f1 = 1807.5 MHz; f2 = 1812.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz; RF performance at VDS = 28 V; IDq = 900 mA; Tcase = 25 C; unless otherwise specified; in a water cooled AB test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 35 W 17.3 18.5 - dB D drain efficiency PL(AV) = 35 W 28 32 - % RLin input return loss PL(AV) = 35 W - 17 10 dB ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 35 W - 30 25 dBc 7. Test information 7.1 Ruggedness in class-AB operation The BLF8G20LS-140V and BLF8G20LS-140GV are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 900 mA; PL = 140 W (CW); f = 1800 MHz. BLF8G20LS-140V_20LS-140GV#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 17 BLF8G20LS-140(G)V Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance Measured load-pull data; IDq = 900 mA; VDS = 28 V. f ZS[1] ZL[1] (MHz) () () 1805 1.71  3.75j 1.5  3.7j 1840 2.01  4.01j 1.4  3.8j 1880 2.35  4.08j 1.5  3.8j 1930 2.62  4.45j 1.6  3.9j 1960 3.13  4.87j 1.4  3.8j 1990 3.93  4.54j 1.3  3.9j 1805 1.71  5.75j 1.5  5.7j 1840 2.01  6.01j 1.4  5.8j 1880 2.35  6.08j 1.5  5.8j 1930 1.62  6.45j 1.6  5.9j 1960 3.13  6.87j 1.4  5.8j 1990 3.93  6.54j 1.3  5.9j BLF8G20LS-140V BLF8G20LS-140GV [1] ZS and ZL defined in Figure 1. drain ZL gate ZS 001aaf059 Fig 1. BLF8G20LS-140V_20LS-140GV#3 Product data sheet Definition of transistor impedance All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 17 BLF8G20LS-140(G)V Power LDMOS transistor 7.3 VBW in a class-AB operation The BLF8G20LS-140V and BLF8G20LS-140GV show 150 MHz (typical) video bandwidth (IMD third-order intermodulation inflection point) in a class-AB test circuit in the 1805 MHz to 1880 MHz band at VDS = 28 V and IDq = 900 mA. aaa-013247 -10 IMD (dBc) -20 (1) (2) IMD3 -30 (1) (2) IMD5 -40 (1) (2) IMD7 -50 -60 -70 1 10 102 carrier spacing (MHz) 103 VDS = 28 V; IDq = 900 mA; R1 = 10 . (1) low (2) high Fig 2. BLF8G20LS-140V_20LS-140GV#3 Product data sheet VBW capacity in class-AB test circuit All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 17 BLF8G20LS-140(G)V Power LDMOS transistor 7.4 Test circuit 50 mm 50 mm C8 C2 C4 C3 R1 C6 C16 C15 C5 C7 C1 C9 T1 60 mm C13 C11 C14 C12 C10 aaa-010868 Printed-Circuit Board (PCB): Rogers 4350B with a thickness of 0.76 mm. See Table 9 for a list of components. Fig 3. Component layout Table 9. List of components See Figure 3 for component layout. Component Description multilayer ceramic chip capacitor 1.2 pF C2 multilayer ceramic chip capacitor 1 F [2] Murata C3 multilayer ceramic chip capacitor 100 nF [2] Murata 12 pF [1] ATC 800B 20 pF [1] ATC 800B Murata Murata C4, C9 multilayer ceramic chip capacitor C5, C12 Product data sheet Remarks [1] C1 BLF8G20LS-140V_20LS-140GV#3 Value multilayer ceramic chip capacitor ATC 800B C6, C11 multilayer ceramic chip capacitor 220 nF [2] C7, C10, C13, C16 multilayer ceramic chip capacitor 4.7 F, 50 V [2] C8 electrolytic capacitor > 470 F, 63 V C14, C15 multilayer ceramic chip capacitor - not mounted R1 chip resistor 4.7 , 1 % tolerance SMD 0805 T1 transistor - Ampleon BLF8G20LS-140V [1] American Technical Ceramics type 800B or capacitor of same quality. [2] Murata or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 17 BLF8G20LS-140(G)V Power LDMOS transistor 7.5 Graphical data 7.5.1 Pulsed CW aaa-010745 22 Gp (dB) aaa-010746 60 (3) (2) (1) ηD (%) 50 20 40 18 30 (3) (2) (1) 20 16 10 14 0 35 39 43 47 51 PL (dBm) 55 35 VDS = 28 V; IDq = 900 mA; tp = 100 s;  = 10 %. 39 (1) f = 1805 MHz (2) f = 1840 MHz (2) f = 1840 MHz (3) f = 1880 MHz (3) f = 1880 MHz Power gain as a function of output power; typical values BLF8G20LS-140V_20LS-140GV#3 Product data sheet 47 51 PL (dBm) 55 VDS = 28 V; IDq = 900 mA; tp = 100 s;  = 10 %. (1) f = 1805 MHz Fig 4. 43 Fig 5. Drain efficiency as a function of out power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 17 BLF8G20LS-140(G)V Power LDMOS transistor 7.5.2 IS-95 aaa-010747 20 Gp (dB) aaa-010748 40 ηD (%) 19 (3) (2) (1) 30 18 (3) (2) (1) 20 17 10 16 15 0 28 32 36 40 44 PL (dBm) 48 35 VDS = 28 V; IDq = 900 mA. 37 39 (1) f = 1810 MHz (2) f = 1840 MHz (2) f = 1840 MHz (3) f = 1875 MHz (3) f = 1875 MHz Power gain as a function of output power; typical values aaa-010749 -30 ACPR855k (dBc) 43 45 47 49 PL (dBm) 51 VDS = 28 V; IDq = 900 mA. (1) f = 1810 MHz Fig 6. 41 Fig 7. Drain efficiency as a function of output power; typical values aaa-010750 -50 _ ACPR1980k (dBc) -55 -40 -60 -50 -65 (3) (2) (1) -70 -60 (3) (2) (1) -75 -70 -80 35 37 39 41 43 45 47 PL (dBm) 49 35 VDS = 28 V; IDq = 900 mA. 37 39 (1) f = 1810 MHz (2) f = 1840 MHz (2) f = 1840 MHz (3) f = 1875 MHz Product data sheet 45 47 PL (dBm) 49 (3) f = 1875 MHz Adjacent channel power ratio (885 kHz) as a function of output power; typical values BLF8G20LS-140V_20LS-140GV#3 43 VDS = 28 V; IDq = 900 mA. (1) f = 1810 MHz Fig 8. 41 Fig 9. Adjacent channel power ratio (1980 kHz) as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 17 BLF8G20LS-140(G)V Power LDMOS transistor aaa-010751 12 PAR (dB) aaa-010752 54 PL(M) (dBm) 52 (3) (2) (1) 10 50 (3) (2) (1) 8 48 6 46 4 44 35 37 39 41 43 45 47 PL (dBm) 49 35 VDS = 28 V; IDq = 900 mA. 37 39 41 43 45 47 PL (dBm) 49 VDS = 28 V; IDq = 900 mA. (1) f = 1810 MHz (1) f = 1810 MHz (2) f = 1840 MHz (2) f = 1840 MHz (3) f = 1875 MHz (3) f = 1875 MHz Fig 10. Peak-to-average ratio as a function of output power; typical values Fig 11. Peak output power as a function of output power; typical values 7.5.3 1-Carrier W-CDMA aaa-010753 21 Gp (dB) aaa-010754 50 ηD (%) 20 40 19 30 18 20 17 (3) (2) (1) 10 (3) (2) (1) 16 0 36 38 40 42 44 46 48 50 PL (dBm) 52 VDS = 28 V; IDq = 900 mA. 36 38 40 (1) f = 1807.5 MHz (2) f = 1840 MHz (2) f = 1840 MHz (3) f = 1877.5 MHz 46 48 50 PL (dBm) 52 (3) f = 1877.5 MHz Fig 12. Power gain as a function of output power; typical values Product data sheet 44 VDS = 28 V; IDq = 900 mA. (1) f = 1807.5 MHz BLF8G20LS-140V_20LS-140GV#3 42 Fig 13. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 17 BLF8G20LS-140(G)V Power LDMOS transistor aaa-010755 8 PAR (dB) aaa-010756 24 RLin (dB) 7 (3) (2) (1) 20 (1) 6 16 (2) 5 (3) 12 4 3 8 36 38 40 42 44 46 48 50 PL (dBm) 52 36 VDS = 28 V; IDq = 900 mA. 38 40 42 44 46 48 50 PL (dBm) 52 VDS = 28 V; IDq = 900 mA. (1) f = 1807.5 MHz (1) f = 1807.5 MHz (2) f = 1840 MHz (2) f = 1840 MHz (3) f = 1877.5 MHz (3) f = 1877.5 MHz Fig 14. Peak-to-average ratio as a function of output power; typical values Fig 15. Input return loss as a function of output power; typical values 7.5.4 2-Carrier W-CDMA aaa-010757 20 Gp (dB) aaa-010758 50 ηD (%) 19 40 18 30 (3) (2) (1) 17 20 16 10 15 (3) (2) (1) 0 36 38 40 42 44 46 48 50 PL (dBm) 52 VDS = 28 V; IDq = 900 mA. 36 38 40 (1) f = 1810 MHz (2) f = 1840 MHz (2) f = 1840 MHz (3) f = 1875 MHz 46 48 50 PL (dBm) 52 (3) f = 1875 MHz Fig 16. Power gain as a function of output power; typical values Product data sheet 44 VDS = 28 V; IDq = 900 mA. (1) f = 1810 MHz BLF8G20LS-140V_20LS-140GV#3 42 Fig 17. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 17 BLF8G20LS-140(G)V Power LDMOS transistor aaa-010759 22 RLin (dB) 20 (1) 18 16 (2) 14 (3) 12 10 36 38 40 42 44 46 48 50 PL (dBm) 52 VDS = 28 V; IDq = 900 mA. (1) f = 1810 MHz (2) f = 1840 MHz (3) f = 1875 MHz Fig 18. Input return loss as a function of output power; typical values aaa-010760 -20 ACPR5M (dBc) aaa-010761 -20 ACPR10M (dBc) -30 -30 -40 -40 (3) (2) (1) (3) (2) (1) -50 -50 -60 -60 35 37 39 41 43 45 47 49 PL (dBm) 51 VDS = 28 V; IDq = 900 mA. 35 37 39 (1) f = 1810 MHz (2) f = 1840 MHz (2) f = 1840 MHz (3) f = 1875 MHz (3) f = 1875 MHz Fig 19. Adjacent channel power ratio (5 MHz) as a function of output power; typical values Product data sheet 43 45 47 49 PL (dBm) 51 VDS = 28 V; IDq = 900 mA. (1) f = 1810 MHz BLF8G20LS-140V_20LS-140GV#3 41 Fig 20. Adjacent channel power ratio (10 MHz) as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 17 BLF8G20LS-140(G)V Power LDMOS transistor 8. Package outline Earless flanged ceramic package; 6 leads SOT1244B D A F 3 D1 C U1 B e c v 4 1 A 5 y U2 H E1 E A 6 2 7 Q b1 b w2 B 0 scale Dimensions Unit(1) b b1 c max 4.75 nom min 3.45 1.41 12.83 0.18 1.14 12.57 0.10 max 0.187 inches nom min 0.136 0.055 0.505 0.007 0.788 0.786 mm 10 mm 5 A D D1 20.02 19.96 Q(2) U1 E E1 F 9.53 9.53 1.14 19.94 1.70 20.70 9.91 9.27 9.27 0.89 18.92 1.45 20.45 9.65 e H U2 v y 0.25 0.25 0.25 18.03 19.61 19.66 0.375 0.375 0.045 0.785 0.067 0.815 0.39 0.01 0.01 0.01 0.710 0.045 0.495 0.004 0.772 0.774 0.365 0.365 0.035 0.745 0.057 0.805 0.38 Note 1. Millimeter dimensions are derived from the original inch dimensions. 2. Dimension is measured 0.030 inch (0.76 mm) from body. Outline version w2 References IEC JEDEC JEITA sot1244b_po European projection Issue date 12-04-18 12-05-07 SOT1244B Fig 21. Package outline SOT1244B BLF8G20LS-140V_20LS-140GV#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 17 BLF8G20LS-140(G)V Power LDMOS transistor Earless flanged ceramic package; 6 leads SOT1244C 0.3 mm gauge plane D Lp F A 3 D1 y Q detail X v A U1 4 H c B 1 X 5 E1 U2 6 A 2 7 b1 b E w2 B θ e 5 0 10 mm scale Dimensions Unit(1) b b1 c max 4.75 nom min 3.45 1.41 12.83 0.18 20.02 19.96 1.14 12.57 0.10 19.61 19.66 max 0.187 inches nom min 0.136 0.055 0.505 0.007 0.788 0.786 0.045 0.495 0.004 0.772 0.774 mm A D D1 e E E1 F H 9.53 9.53 1.14 14.3 1.38 0.195 20.70 9.91 9.27 9.27 0.89 14.1 0.98 0.055 20.45 9.65 Lp Q U1 U2 w2 y θ 0.25 0.25 0.15 7° 0.01 0.01 0.006 0° 7° 18.03 0.375 0.375 0.045 0.563 0.055 0.008 0.815 0.39 0.710 References IEC JEDEC 0° 0.365 0.365 0.035 0.555 0.039 0.002 0.805 0.38 Note 1. Millimeter dimensions are derived from the original inch dimensions. Outline version v JEITA sot1244c_po European projection Issue date 12-05-10 12-05-30 SOT1244C Fig 22. Package outline SOT1244C BLF8G20LS-140V_20LS-140GV#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 17 BLF8G20LS-140(G)V Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor MTF Median Time to Failure PAR Peak-to-Average Ratio SMD Surface Mounted Device VBW Video BandWidth VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 11. Revision history Document ID Release date Data sheet status BLF8G20LS-140V_20LS-140GV#3 20150901 Product data sheet Modifications: Change notice Supersedes BLF8G20LS-140V _20LS-140GV v.2 • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF8G20LS-140V_20LS-140GV v.2 20141007 Product data sheet - BLF8G20LS-140V _20LS-140GV v.1 BLF8G20LS-140V_20LS-140GV v.1 20140207 Objective data sheet - - BLF8G20LS-140V_20LS-140GV#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 14 of 17 BLF8G20LS-140(G)V Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. 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Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLF8G20LS-140V_20LS-140GV#3 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 15 of 17 BLF8G20LS-140(G)V Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com BLF8G20LS-140V_20LS-140GV#3 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 16 of 17 BLF8G20LS-140(G)V Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.5.1 7.5.2 7.5.3 7.5.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 VBW in a class-AB operation . . . . . . . . . . . . . . 5 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 IS-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Handling information. . . . . . . . . . . . . . . . . . . . 14 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF8G20LS-140V_20LS-140GV#3