GP3D008A065A

GP3D008A065A 650V SiC Schottky Diode Amp+ TM VDC QC IF 650 V 20 nC 8A Tj,max 175 °C Package Features • Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ* • All parts tested to greater than 715V Amp+ TM Benefits • Near zero switching loss • Higher efficiency • Smaller heat sink • Easy to parallel Amp+ TM Applications Part # Package Marking GP3D008A065A TO-220-2L 3D008A065 • Switch mode power supplies, UPS • Power factor correction • EV charging stations • Output rectification Maximum Ratings, at Tj=25 °C, unless otherwise specified Characteristics Continuous forward current Symbol IF** Surge non-repetitive forward current sine halfwave IFSM Non-repetitive peak forward current IF,max Conditions Values TC=25 °C, Tj=175 °C 27 TC=125 °C, Tj=175 °C 15 TC=150 °C, Tj=175 °C 9 TC=25 °C, tp=8.3 ms 74 TC=110 °C, tp=8.3 ms 70 TC=25 °C, tp=10 μs 700 TC=25 °C, tp=8.3 ms 23 TC=110 °C, tp=8.3 ms 20 Unit A A A i 2t value i 2dt Repetitive peak reverse voltage VRRM Tj=25 °C 650 V Diode dv/dt ruggedness dv/dt Turn-on slew rate, repetitive 200 V/ns Power dissipation Ptot** TC=25 °C 107 W -55…175 °C Operating junction & storage temperature Soldering temperature Mounting torque Tj, Tstorage Continuous Tsolder Wave soldering leads M3 Screw A2 s 260 °C 1 N-m Notes: * EAS of 38 mJ is based on starting Tj = 25°C, L = 1.0 mH, IAS = 8.72 A, V = 50 V. ** Typical RthJC used Rev. 1 .1, 9/3/2020 www.SemiQ.com p.1 650V SiC Schottky Diode GP3D008A065A Amp +TM Electrical Characteristics, at Tj=25 °C, unless otherwise specified Characteristics Symbol Values Conditions typ. max. - - V V DC blocking voltage VDC Tj=25 °C 650 Breakdown voltage VBR IR=264µA, Tj=25 °C VF Diode forward voltage IR Reverse current Total capacitive charge QC Total capacitance C Unit min. 715 - - IF=8A, Tj=25 °C - 1.38 1.50 IF=8A, Tj=125 °C - 1.49 - IF=8A, Tj=175 °C - 1.61 1.80 VR=650V, Tj=25 °C - 3 20 VR=715V, Tj=25 °C - 9 - VR=650V, Tj=125 °C - 15 - VR=650V, Tj=175 °C - 46 200 VR=400V, Tj=25 °C - 20 - VR=1V, f=1 MHz - 321 - VR=200V, f=1 MHz - 38 - VR=400V, f=1 MHz - 31 - V mA nC pF Thermal Characteristics Characteristics Thermal resistance, junction-case Symbol Conditions RthJC - Values min. typ. max. - 1.40 2.00 Unit o C/W Typical Performance 16 1.E-04 14 -55C -55C 25C 25C 75C 12 75C 1.E-05 125C 125C IR (A) IF (A) 175C 175C 10 8 1.E-06 6 4 1.E-07 2 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 0 VF (V) 200 300 400 500 600 VR (V) Fig. 1 Forward Characteristics (parameterized on Tj) Rev. 1 .1, 9/3/2020 100 Fig. 2 Reverse Characteristics (parameterized on Tj) www.SemiQ.com p.2 650V SiC Schottky Diode 1,000 120 -55C 900 25C 800 100 75C 125C 700 80 175C PTotal (W) 600 IR (µA) GP3D008A065A Amp +TM 500 400 60 40 300 200 20 100 Tj=175 oC 0 0 100 200 300 400 500 600 700 800 25 900 75 125 175 TC (oC) VR (V) Fig. 3 Reverse Characteristics (parameterized on Tj) Fig. 4 Power Derating 140 450 Duty cycle 100% 50% 350 30% 100 Tj=25 oC 400 70% 120 20% 300 10% IF (A) C (pF) 80 60 250 200 150 40 100 20 50 Tj=175 oC 0 0 25 45 65 85 105 125 145 165 1 Fig. 5 Capacitance Rev. 1 .1, 9/3/2020 10 100 VR (V) TC (oC) Fig. 6 Capacitance www.SemiQ.com p.3 650V SiC Schottky Diode GP3D008A065A Amp +TM 30 8 Tj=25 oC Tj=25 oC 7 25 6 5 EC (μJ) QC (nC) 20 15 4 3 10 2 5 1 0 0 0 100 200 300 400 500 600 0 100 200 300 400 500 600 VR (V) VR (V) Fig. 7 Capacitive Charge Fig. 8 Typical Capacitance Stored Energy Normalized Zthjc 1E+00 D=0.50 1E-01 D=0.30 D=0.10 D=0.05 D=0.02 D=0.01 1E-02 1E-03 1E-06 Single Pulse 1E-04 1E-02 1E+00 1E+02 Pulse Width (s) Fig. 9 Transient Thermal Impedance Rev. 1 .1, 9/3/2020 www.SemiQ.com p.4 650V SiC Schottky Diode GP3D008A065A Amp +TM Package Dimensions TO-220-2L Sym A A1 A2 b b2 c D D1 D2 E E1 e e1 H1 L L1 ØP Q Millimeters Max Min 4.83 3.56 1.40 0.51 2.92 2.03 1.02 0.38 1.78 1.02 0.76 0.36 14.22 16.51 9.40 8.38 12.19 13.13 9.65 10.67 8.89 6.86 2.54 BSC 5.08 BSC 6.86 5.84 12.57 14.73 6.35 3.60 4.09 3.53 3.43 2.54 Inches Min Max 0.140 0.190 0.020 0.055 0.080 0.115 0.015 0.040 0.040 0.070 0.014 0.030 0.560 0.650 0.330 0.370 0.480 0.517 0.380 0.420 0.270 0.350 .100 BSC .200 BSC 0.230 0.270 0.495 0.580 0.142 0.250 0.139 0.161 0.100 0.135 Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, 2013. RoHS Declarations for this product can be obtained from the Product Documentation sections of www.SemiQ.com. REACh Compliance REACh substances of high concern (SVHC) information is available for this product. Since the European Chemicals Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact our office at SemiQ Headquarters in Lake Forest, California to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. SemiQ Inc., reserves the right to make changes to the product specifications and data in this document without notice. SemiQ products are sold pursuant to SemiQ’s terms and conditions of sale in place at the time of order acknowledgement. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control. SemiQ makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SemiQ assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using SemiQ products. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by SemiQ. SemiQ reserves the right to make changes, corrections, modifications, and improvements of datasheet without notice. Rev. 1 .1, 9/3/2020 www.SemiQ.com p.5