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GP3D005A170B

GP3D005A170B

  • 厂商:

    SEMIQ

  • 封装:

    TO247-2

  • 描述:

    SIC SCHOTTKY DIODE 1700V TO247-2

  • 数据手册
  • 价格&库存
GP3D005A170B 数据手册
GP3D005A170B 1700V SiC Schottky Diode Amp+ TM VDC QC IF 1700 V 52 nC 5A Tj,max 175 °C Package Features • Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 145mJ* Amp+ TM Benefits • Near zero switching loss • Higher efficiency • Smaller heat sink • Easy to parallel Amp+ TM Applications Part # Package Marking GP3D005A170B TO-247-2L 3D005A170 • Switch mode power supplies, UPS • DC/DC Converters • Solar Inverters • EV charging stations Maximum Ratings, at Tj=25 °C, unless otherwise specified Characteristics Continuous forward current Symbol IF** Surge non-repetitive forward current sine halfwave IFSM Non-repetitive peak forward current IF,max Conditions Values TC=25 °C, Tj=175 °C 21 TC=125 °C, Tj=175 °C 11 TC=150 °C, Tj=175 °C 7 TC=25 °C, tp=8.3 ms 75 TC=110 °C, tp=8.3 ms 60 TC=25 °C, tp=10 μs 440 TC=25 °C, tp=8.3 ms 23 TC=110 °C, tp=8.3 ms 15 Unit A A A i 2t value i 2dt Repetitive peak reverse voltage VRRM Tj=25 °C 1700 V Diode dv/dt ruggedness dv/dt Turn-on slew rate, repetitive 200 V/ns Power dissipation Ptot** TC=25 °C 140 W -55…175 °C Operating junction & storage temperature Soldering temperature Mounting torque Tj, Tstorage Continuous Tsolder Wave soldering leads M3 Screw A2 s 260 °C 1 N-m Notes: * EAS of 145 mJ is based on starting Tj = 25°C, L = 1.0 mH, IAS = 17.03 A, V = 50 V. ** Typical RthJC used Rev. 1, 2/19/2020 www.SemiQ.com p.1 1700V SiC Schottky Diode GP3D005A170B Amp +TM Electrical Characteristics, at Tj=25 °C, unless otherwise specified Characteristics Symbol DC blocking voltage VDC Diode forward voltage VF IR Reverse current Total capacitive charge QC Total capacitance C Values Conditions min. typ. max. 1700 - - IF=5A, Tj=25 °C - 1.50 1.65 IF=5A, Tj=125 °C - 1.96 - IF=5A, Tj=175 °C - 2.33 2.55 VR=1,700V, Tj=25 °C - 1 20 VR=1,700V, Tj=125 °C - 6 - VR=1,700V, Tj=175 °C - 23 200 VR=1700V, Tj=25 °C - 52 - VR=1V, f=1 MHz - 347 - VR=800V, f=1 MHz - 23 - VR=1700V, f=1 MHz - 22 - Tj=25 °C Unit V V mA nC pF Thermal Characteristics Characteristics Thermal resistance, junction-case Symbol Conditions RthJC - Values min. typ. max. - 1.07 1.35 Unit o C/W Typical Performance 10 1.E-04 9 8 -55C 25C 25C 75C 75C 1.E-05 125C 125C 7 175C 175C IR (A) 6 IF (A) -55C 5 1.E-06 4 3 1.E-07 2 1 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 200 VF (V) 1,200 1,700 VR (V) Fig. 1 Forward Characteristics (parameterized on Tj) Rev. 1, 2/19/2020 700 Fig. 2 Reverse Characteristics (parameterized on Tj) www.SemiQ.com p.2 1700V SiC Schottky Diode GP3D005A170B Amp +TM 160 160 140 140 120 120 100 100 Duty cycle 100% 70% 50% 30% IF (A) PTotal (W) 20% 80 80 60 60 40 40 20 10% 20 Tj=175 oC Tj=175 oC 0 0 25 75 125 175 25 45 65 85 TC (oC) 105 125 145 165 TC (oC) Fig. 3 Power Derating Fig. 4 Current Derating 400 60 Tj=25 oC 350 Tj=25 oC 50 300 40 QC (nC) C (pF) 250 200 150 30 20 100 10 50 0 0 1 10 100 1000 0 500 VR (V) Fig. 5 Capacitance Rev. 1, 2/19/2020 1000 1500 VR (V) Fig. 6 Capacitive Charge www.SemiQ.com p.3 1700V SiC Schottky Diode GP3D005A170B Amp +TM 40 1E+00 Tj=25 oC 35 Normalized Zthjc 30 EC (μJ) 25 20 15 D=0.50 1E-01 D=0.30 D=0.10 D=0.05 D=0.02 D=0.01 1E-02 Single Pulse 10 5 0 0 500 1000 1E-03 1E-06 1500 1E-04 VR (V) Fig. 7 Typical Capacitance Stored Energy 1E-02 1E+00 1E+02 Pulse Width (s) Fig. 8 Transient Thermal Impedance Package Dimensions TO-247-2L Sym A A1 A2 b b2 c D D1 D2 E E1 E2 e L L1 ØP ØP1 Q S Rev. 1, 2/19/2020 www.SemiQ.com Millimeters Max Min 5.31 4.70 2.59 2.21 2.49 1.50 1.40 0.99 2.39 1.65 0.89 0.38 20.80 21.46 13.08 17.65 1.35 0.51 15.49 16.26 13.46 14.16 5.49 3.43 5.44 BSC 19.81 20.32 4.50 4.10 3.66 3.56 7.39 7.06 6.20 5.38 6.30 6.04 Inches Min Max 0.185 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.065 0.094 0.015 0.035 0.819 0.845 0.515 0.695 0.020 0.053 0.610 0.640 0.530 0.557 0.135 0.216 .214 BSC 0.780 0.800 0.161 0.177 0.140 0.144 0.278 0.291 0.212 0.244 0.238 0.248 p.4 1700V SiC Schottky Diode Amp +TM GP3D005A170B Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, 2013. RoHS Declarations for this product can be obtained from the Product Documentation sections of www.SemiQ.com. REACh Compliance REACh substances of high concern (SVHC) information is available for this product. Since the European Chemicals Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact our office at SemiQ Headquarters in Lake Forest, California to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. SemiQ Inc., reserves the right to make changes to the product specifications and data in this document without notice. SemiQ products are sold pursuant to SemiQ’s terms and conditions of sale in place at the time of order acknowledgement. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control. SemiQ makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SemiQ assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using SemiQ products. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by SemiQ. SemiQ reserves the right to make changes, corrections, modifications, and improvements of datasheet without notice. Rev. 1, 2/19/2020 www.SemiQ.com p.5
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