GP3D040A120U
1200V SiC Schottky Diode
Amp+
TM
VDC
QC
IF
1200 V
212 nC***
40 A***
Tj,max
175 °C
Package
Features
• Unipolar rectifier with surge current
• Zero reverse recovery current
• Fast, temperature-independent switching
• Avalanche tested to 275mJ per leg*
• All parts tested to greater than 1,400V
Amp+
TM
Benefits
• Near zero switching loss
• Higher efficiency
• Smaller heat sink
• Easy to parallel
Amp+
TM
Applications
Part #
Package
Marking
GP3D040A120U
TO-247-3L
3D040A120
• Solar Inverters
• Switch mode power supplies, UPS
• Power factor correction
• EV charging stations
Maximum Ratings, at Tj=25 °C, unless otherwise specified
Characteristics Per Leg
Continuous forward current
Symbol
IF**
Surge non-repetitive forward current
sine halfwave
IFSM
Non-repetitive peak forward current
IF,max
Conditions
Values
TC=25 °C, Tj=175 °C
59
TC=125 °C, Tj=175 °C
32
TC=150 °C, Tj=175 °C
21
TC=25 °C, tp=8.3 ms
210
TC=110 °C, tp=8.3 ms
180
TC=25 °C, tp=10 μs
1100
TC=25 °C, tp=8.3 ms
183
TC=110 °C, tp=8.3 ms
134
Unit
A
A
A
i 2t value
i 2dt
Repetitive peak reverse voltage
VRRM
Tj=25 °C
1200
V
Diode dv/dt ruggedness
dv/dt
Turn-on slew rate,
repetitive
200
V/ns
Power dissipation
Ptot**
TC=25 °C
302
W
-55…175
°C
Operating junction & storage
temperature
Soldering temperature
Mounting torque
Tj, Tstorage Continuous
Tsolder
Wave soldering leads
M3 Screw
A2 s
260
°C
1
N-m
Notes:
* EAS of 275 mJ is based on starting Tj = 25°C, L = 1.0 mH, IAS = 23.45 A, V = 50 V.
** Typical RthJC used
*** Per Device
Rev. 1.1, 4/17/2020
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1200V SiC Schottky Diode
GP3D040A120U
Amp +TM
Electrical Characteristics, at Tj=25 °C, unless otherwise specified
Characteristics Per Leg
Symbol
Values
Conditions
typ.
max.
-
-
V
V
DC blocking voltage
VDC
Tj=25 °C
1200
Breakdown voltage
VBR
IR=1.00mA, Tj=25 °C
VF
Diode forward voltage
IR
Reverse current
Total capacitive charge
QC
Total capacitance
C
Unit
min.
1400
-
-
IF=20A, Tj=25 °C
-
1.54
1.65
IF=20A, Tj=125 °C
-
1.95
-
IF=20A, Tj=175 °C
-
2.24
2.70
VR=1,200V, Tj=25 °C
-
1
40
VR=1,400V, Tj=25 °C
-
5
-
VR=1,200V, Tj=125 °C
-
11
-
VR=1,200V, Tj=175 °C
-
48
600
VR=800V, Tj=25 °C
-
106
-
VR=1V, f=1 MHz
-
1179
-
VR=400V, f=1 MHz
-
101
-
VR=800V, f=1 MHz
-
73
-
V
mA
nC
pF
Thermal Characteristics
Characteristics Per Leg
Thermal resistance, junction-case
Symbol
Conditions
RthJC
-
Values
min.
typ.
max.
-
0.50
0.80
Unit
o
C/W
Typical Performance Per Leg
40
1.E-03
-55C
35
-55C
25C
25C
1.E-04
75C
30
75C
125C
125C
1.E-05
IR (A)
IF (A)
175C
175C
25
20
1.E-06
15
10
1.E-07
5
0
1.E-08
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
VF (V)
400
600
800
1,000
1,200
VR (V)
Fig. 1 Forward Characteristics (parameterized on Tj)
Rev. 1.1, 4/17/2020
200
Fig. 2 Reverse Characteristics (parameterized on Tj)
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1200V SiC Schottky Diode
GP3D040A120U
Amp +TM
1,400
350
-55C
1,200
300
25C
75C
125C
1,000
250
800
PTotal (W)
IR (µA)
175C
600
200
150
400
100
200
50
Tj=175 oC
0
0
200
400
600
25
800 1,000 1,200 1,400 1,600 1,800 2,000
75
125
175
TC (oC)
VR (V)
Fig. 3 Reverse Characteristics (parameterized on Tj)
Fig. 4 Power Derating
350
1400
Duty cycle
100%
70%
300
Tj=25 oC
1200
50%
30%
250
1000
20%
10%
IF (A)
C (pF)
200
150
800
600
400
100
50
200
Tj=175
oC
0
0
25
45
65
85
105
125
145
165
1
Fig. 5 Capacitance
Rev. 1.1, 4/17/2020
10
100
1000
VR (V)
TC (oC)
Fig. 6 Capacitance
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1200V SiC Schottky Diode
GP3D040A120U
Amp +TM
160
70
Tj=25 oC
140
Tj=25 oC
60
120
50
EC (μJ)
QC (nC)
100
80
40
30
60
20
40
10
20
0
0
0
200
400
600
800
1000
1200
0
200
400
600
800
1000
1200
VR (V)
VR (V)
Fig. 7 Capacitive Charge
Fig. 8 Typical Capacitance Stored Energy
Normalized Zthjc
1E+00
D=0.50
1E-01
D=0.30
D=0.10
D=0.05
D=0.02
D=0.01
1E-02
1E-03
1E-06
Single Pulse
1E-04
1E-02
1E+00
1E+02
Pulse Width (s)
Fig. 9 Transient Thermal Impedance
Rev. 1.1, 4/17/2020
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1200V SiC Schottky Diode
GP3D040A120U
Amp +TM
Package Dimensions TO-247-3L
Sym
A
A1
A2
b
b2
b4
c
D
D1
D2
E
E1
E2
e
L
L1
ØP
ØP1
Q
S
Millimeters
Max
Min
5.31
4.70
2.59
2.21
2.49
1.50
1.40
0.99
2.39
1.65
3.43
2.59
0.89
0.38
20.80 21.46
13.08 17.65
1.35
0.51
15.49 16.26
13.46 14.16
5.49
3.43
5.44 BSC
19.81 20.32
4.50
4.10
3.66
3.56
7.39
7.06
6.20
5.39
6.30
6.04
Inches
Min
Max
0.185 0.209
0.087 0.102
0.059 0.098
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.819 0.845
0.515 0.695
0.020 0.053
0.610 0.640
0.530 0.557
0.135 0.216
0.214 BSC
0.780 0.800
0.161 0.177
0.140 0.144
0.278 0.291
0.212 0.244
0.238 0.248
Notes
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted
for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, 2013. RoHS
Declarations for this product can be obtained from the Product Documentation sections of www.SemiQ.com.
REACh Compliance
REACh substances of high concern (SVHC) information is available for this product. Since the European Chemicals Agency (ECHA) has published notice of
their intent to frequently revise the SVHC listing for the foreseeable future,please contact our office at SemiQ Headquarters in Lake Forest, California to
insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
SemiQ Inc., reserves the right to make changes to the product specifications and data in this document without notice. SemiQ products are sold
pursuant to SemiQ’s terms and conditions of sale in place at the time of order acknowledgement.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications
in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of
nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control.
SemiQ makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SemiQ assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages. Buyer is responsible for its products and applications using SemiQ products.
To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by
SemiQ. SemiQ reserves the right to make changes, corrections, modifications, and improvements of datasheet without notice.
Rev. 1.1, 4/17/2020
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