0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
GHXS030A060S-D3

GHXS030A060S-D3

  • 厂商:

    SEMIQ

  • 封装:

    SOT-227

  • 描述:

    DIODE SBD SHOTT 600V 30A SOT227

  • 数据手册
  • 价格&库存
GHXS030A060S-D3 数据手册
GHXS030A060S-D3 600V SiC Power Module Dual Diode Pack Features VDC 600 V IF 30 A Tj,max 175 °C Package • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to 700V Parallel Benefits • Outstanding performance at high frequency operation • Low loss and low EMI noise • Very rugged and easy mount • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VF • RoHS compliant Part # Package Marking GHXS030A060S-D3 SOT-227 GHXS030A060S-D3 Applications • Switched-mode power supply • Induction heater • Welding equipment • Charging station Maximum Ratings, at Tj=25 °C, unless otherwise specified (per leg) Characteristics Symbol Conditions Value Unit TC=149 °C, Tj=175 °C TC=150 °C, Tj=175 °C 90 30 29 A TC=25 °C, Tj=25 °C, tp=8.3 ms TC=110 °C, Tj=110 °C, tp=8.3 ms 288 210 A TC=25 °C, tp=10 μs TC=25 °C, tp=8.3 ms 1500 344 TC=110 °C, tp=8.3 ms Tj=25 °C 183 600 200 V V/ns 263 -55…175 W °C -55…150 °C TC=25 °C, Tj=175 °C Continuous forward current IF * Surge non-repetitive forward current sine halfwave IFSM Non-repetitive peak forward current IF,max 2 2 i t value i dt Repetitive peak reverse voltage Diode dv/dt ruggedness VRRM Power dissipation Operating junction temperature dv/dt Ptot* Tj Storage temperature Tstorage Turn-on slew rate, repetitive TC=25 °C A 2 As Notes: * Typical RthJC used Rev. 1.3, 5/15/2020 www.SemiQ.com p.1 GHXS030A060S-D3 600V SiC Power Module Electrical Characteristics, at Tj=25 °C, unless otherwise specified (per leg) Characteristics Symbol DC blocking voltage Breakdown voltage Diode forward voltage Conditions VDC VBR IR=90µA, Tj=25 °C IR=1mA, Tj=25 °C VF IF=30A, Tj=25 °C IF=30A, Tj=125 °C Reverse current IR Total capacitive charge QC Total capacitance C IF=30A, Tj=175 °C VR=600V, Tj=25 °C VR=700V, Tj=25 °C VR=600V, Tj=125 °C VR=600V, Tj=175 °C VR=400V, Tj=25 °C VR=1V, f=1 MHz VR=200V, f=1 MHz VR=400V, f=1 MHz min. 600 Values typ. - max. - 700 - 1.38 1.50 - 1.43 1.52 1.90 - 1 9 13 90 - - 57 107 900 - - 1700 202 171 - Unit V V V mA nC pF Thermal and Package Characteristics, at Tj=25 °C, unless otherwise specified Characteristics Symbol Thermal resistance, junction-case Mounting torque Terminal connection torque Package weight RthJC Md Mdt Wt Isolation voltage VISOL Per leg M4-0.7 screws M4-0.7 screws min. 1.1 - Values typ. 0.57 1.1 32 max. 0.75 1.5 1.3 - IISOL < 1mA, 50/60 Hz, 1 min 2500 - - Conditions Unit o C/W N-m N-m g V Typical Performance Per Leg 60 1.E-04 50 -55C -55C 25C 25C 75C 75C 1.E-05 125C 125C 40 175C IR (A) IF (A) 175C 30 1.E-06 20 1.E-07 10 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 0 VF (V) 200 300 400 500 600 VR (V) Fig. 1 Forward Characteristics (parameterized on Tj) Rev. 1.3, 5/15/2020 100 Fig. 2 Reverse Characteristics (parameterized on Tj) www.SemiQ.com p.2 GHXS030A060S-D3 600V SiC Power Module 4000 300 -55C 3500 25C 75C 3000 125C 200 175C PTotal (W) 2500 IR (µA) Tj=175 oC 250 2000 150 1500 100 1000 50 500 0 0 0 100 200 300 400 500 600 700 800 900 1,000 25 75 Fig. 3 Reverse Characteristics (parameterized on Tj) 175 Fig. 4 Power Derating 400 2000 Duty cycle Tj=175 oC 350 100% Tj=25 oC 1800 70% 50% 300 1600 30% 1400 20% 250 10% 1200 C (pF) IF (A) 125 TC (oC) VR (V) 200 1000 800 150 600 100 400 50 200 0 0 25 75 125 175 1 TC (oC) Fig. 5 Current Derating Rev. 1.3, 5/15/2020 10 100 VR (V) Fig. 6 Capacitance www.SemiQ.com p.3 600V SiC Power Module GHXS030A060S-D3 35 160 Tj=25 oC 140 Tj=25 oC 30 120 25 EC (μJ) QC (nC) 100 80 20 15 60 10 40 5 20 0 0 0 100 200 300 400 500 0 600 VR (V) 100 200 300 400 500 600 VR (V) Fig. 7 Capacitive Charge Fig. 8 Typical Capacitance Stored Energy Normalized Zthjc 1E+00 D=0.50 1E-01 D=0.30 D=0.10 D=0.05 D=0.02 D=0.01 1E-02 Single Pulse 1E-03 1E-06 1E-04 1E-02 1E+00 1E+02 Pulse Width (s) Fig. 9 Transient Thermal Impedance Rev. 1.3, 5/15/2020 www.SemiQ.com p.4 GHXS030A060S-D3 600V SiC Power Module Package Dimensions SOT-227 Sym A B C D E F G H I J K L M N O P Q R S T U V W X Y Z Rev. 1.3, 5/15/2020 Millimeters Max Min 31.90 31.67 8.18 7.95 4.24 4.14 4.24 4.14 4.24 4.14 15.09 14.94 30.25 30.15 38.10 38.00 4.83 4.75 12.19 11.68 9.60 9.45 0.84 0.76 12.88 12.62 25.30 25.15 25.04 24.79 3.15 3.02 6.96 6.71 4.42 4.17 2.13 2.08 3.63 3.28 26.90 26.75 4.24 3.86 26.90 20.55 5.85 5.45 3.66 3.15 0.13 0.00 Inches Max Min 1.256 1.247 0.322 0.313 0.167 0.163 0.167 0.163 0.167 0.163 0.594 0.588 1.191 1.187 1.500 1.496 0.190 0.187 0.480 0.460 0.378 0.372 0.033 0.030 0.507 0.497 0.996 0.990 0.986 0.976 0.124 0.119 0.274 0.264 0.174 0.164 0.084 0.082 0.143 0.129 1.059 1.053 0.167 0.152 0.814 0.809 0.230 0.215 0.144 0.124 0.005 0.000 www.SemiQ.com p.5 600V SiC Power Module Revision History Date Revision 9/6/2013 1.0 6/4/2014 1.1 1/3/2020 1.2 5/15/2020 1.3 GHXS030A060S-D3 Notes Initial release Add the part number, pin assignment table. Applied company name change Updated data Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, 2013. RoHS Declarations for this product can be obtained from the Product Documentation sections of www.SemiQ.com. REACh Compliance REACh substances of high concern (SVHC) information is available for this product. Since the European Chemicals Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact our office at SemiQ Headquarters in Lake Forest, California to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. SemiQ Inc., reserves the right to make changes to the product specifications and data in this document without notice. SemiQ products are sold pursuant to SemiQ’s terms and conditions of sale in place at the time of order acknowledgement. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control. SemiQ makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SemiQ assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using SemiQ products. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by SemiQ. SemiQ reserves the right to make changes, corrections, modifications, and improvements of datasheet without notice. Rev. 1.3, 5/15/2020 www.SemiQ.com p.6
GHXS030A060S-D3 价格&库存

很抱歉,暂时无法提供与“GHXS030A060S-D3”相匹配的价格&库存,您可以联系我们找货

免费人工找货