GHXS030A060S-D3
600V SiC Power Module
Dual Diode Pack
Features
VDC
600 V
IF
30 A
Tj,max
175 °C
Package
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature independent switching behavior
- Positive temperature coefficient on VF
• Low stray inductance
• High junction temperature operation
• All parts tested to 700V
Parallel
Benefits
• Outstanding performance at high frequency
operation
• Low loss and low EMI noise
• Very rugged and easy mount
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VF
• RoHS compliant
Part #
Package
Marking
GHXS030A060S-D3
SOT-227
GHXS030A060S-D3
Applications
• Switched-mode power supply
• Induction heater
• Welding equipment
• Charging station
Maximum Ratings, at Tj=25 °C, unless otherwise specified (per leg)
Characteristics
Symbol
Conditions
Value
Unit
TC=149 °C, Tj=175 °C
TC=150 °C, Tj=175 °C
90
30
29
A
TC=25 °C, Tj=25 °C, tp=8.3 ms
TC=110 °C, Tj=110 °C, tp=8.3 ms
288
210
A
TC=25 °C, tp=10 μs
TC=25 °C, tp=8.3 ms
1500
344
TC=110 °C, tp=8.3 ms
Tj=25 °C
183
600
200
V
V/ns
263
-55…175
W
°C
-55…150
°C
TC=25 °C, Tj=175 °C
Continuous forward current
IF *
Surge non-repetitive forward current
sine halfwave
IFSM
Non-repetitive peak forward current
IF,max
2
2
i t value
i dt
Repetitive peak reverse voltage
Diode dv/dt ruggedness
VRRM
Power dissipation
Operating junction temperature
dv/dt
Ptot*
Tj
Storage temperature
Tstorage
Turn-on slew rate, repetitive
TC=25 °C
A
2
As
Notes: * Typical RthJC used
Rev. 1.3, 5/15/2020
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GHXS030A060S-D3
600V SiC Power Module
Electrical Characteristics, at Tj=25 °C, unless otherwise specified (per leg)
Characteristics
Symbol
DC blocking voltage
Breakdown voltage
Diode forward voltage
Conditions
VDC
VBR
IR=90µA, Tj=25 °C
IR=1mA, Tj=25 °C
VF
IF=30A, Tj=25 °C
IF=30A, Tj=125 °C
Reverse current
IR
Total capacitive charge
QC
Total capacitance
C
IF=30A, Tj=175 °C
VR=600V, Tj=25 °C
VR=700V, Tj=25 °C
VR=600V, Tj=125 °C
VR=600V, Tj=175 °C
VR=400V, Tj=25 °C
VR=1V, f=1 MHz
VR=200V, f=1 MHz
VR=400V, f=1 MHz
min.
600
Values
typ.
-
max.
-
700
-
1.38
1.50
-
1.43
1.52
1.90
-
1
9
13
90
-
-
57
107
900
-
-
1700
202
171
-
Unit
V
V
V
mA
nC
pF
Thermal and Package Characteristics, at Tj=25 °C, unless otherwise specified
Characteristics
Symbol
Thermal resistance, junction-case
Mounting torque
Terminal connection torque
Package weight
RthJC
Md
Mdt
Wt
Isolation voltage
VISOL
Per leg
M4-0.7 screws
M4-0.7 screws
min.
1.1
-
Values
typ.
0.57
1.1
32
max.
0.75
1.5
1.3
-
IISOL < 1mA,
50/60 Hz, 1 min
2500
-
-
Conditions
Unit
o
C/W
N-m
N-m
g
V
Typical Performance Per Leg
60
1.E-04
50
-55C
-55C
25C
25C
75C
75C
1.E-05
125C
125C
40
175C
IR (A)
IF (A)
175C
30
1.E-06
20
1.E-07
10
0
1.E-08
0.0
0.5
1.0
1.5
2.0
2.5
0
VF (V)
200
300
400
500
600
VR (V)
Fig. 1 Forward Characteristics (parameterized on Tj)
Rev. 1.3, 5/15/2020
100
Fig. 2 Reverse Characteristics (parameterized on Tj)
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GHXS030A060S-D3
600V SiC Power Module
4000
300
-55C
3500
25C
75C
3000
125C
200
175C
PTotal (W)
2500
IR (µA)
Tj=175 oC
250
2000
150
1500
100
1000
50
500
0
0
0
100
200
300
400
500
600
700
800
900 1,000
25
75
Fig. 3 Reverse Characteristics (parameterized on Tj)
175
Fig. 4 Power Derating
400
2000
Duty cycle
Tj=175 oC
350
100%
Tj=25 oC
1800
70%
50%
300
1600
30%
1400
20%
250
10%
1200
C (pF)
IF (A)
125
TC (oC)
VR (V)
200
1000
800
150
600
100
400
50
200
0
0
25
75
125
175
1
TC (oC)
Fig. 5 Current Derating
Rev. 1.3, 5/15/2020
10
100
VR (V)
Fig. 6 Capacitance
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600V SiC Power Module
GHXS030A060S-D3
35
160
Tj=25 oC
140
Tj=25 oC
30
120
25
EC (μJ)
QC (nC)
100
80
20
15
60
10
40
5
20
0
0
0
100
200
300
400
500
0
600
VR (V)
100
200
300
400
500
600
VR (V)
Fig. 7 Capacitive Charge
Fig. 8 Typical Capacitance Stored Energy
Normalized Zthjc
1E+00
D=0.50
1E-01
D=0.30
D=0.10
D=0.05
D=0.02
D=0.01
1E-02
Single Pulse
1E-03
1E-06
1E-04
1E-02
1E+00
1E+02
Pulse Width (s)
Fig. 9 Transient Thermal Impedance
Rev. 1.3, 5/15/2020
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GHXS030A060S-D3
600V SiC Power Module
Package Dimensions SOT-227
Sym
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
Rev. 1.3, 5/15/2020
Millimeters
Max
Min
31.90
31.67
8.18
7.95
4.24
4.14
4.24
4.14
4.24
4.14
15.09
14.94
30.25
30.15
38.10
38.00
4.83
4.75
12.19
11.68
9.60
9.45
0.84
0.76
12.88
12.62
25.30
25.15
25.04
24.79
3.15
3.02
6.96
6.71
4.42
4.17
2.13
2.08
3.63
3.28
26.90
26.75
4.24
3.86
26.90
20.55
5.85
5.45
3.66
3.15
0.13
0.00
Inches
Max
Min
1.256
1.247
0.322
0.313
0.167
0.163
0.167
0.163
0.167
0.163
0.594
0.588
1.191
1.187
1.500
1.496
0.190
0.187
0.480
0.460
0.378
0.372
0.033
0.030
0.507
0.497
0.996
0.990
0.986
0.976
0.124
0.119
0.274
0.264
0.174
0.164
0.084
0.082
0.143
0.129
1.059
1.053
0.167
0.152
0.814
0.809
0.230
0.215
0.144
0.124
0.005
0.000
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600V SiC Power Module
Revision History
Date
Revision
9/6/2013
1.0
6/4/2014
1.1
1/3/2020
1.2
5/15/2020 1.3
GHXS030A060S-D3
Notes
Initial release
Add the part number, pin assignment table.
Applied company name change
Updated data
Notes
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits)
permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented
March, 2013. RoHS Declarations for this product can be obtained from the Product Documentation sections of www.SemiQ.com.
REACh Compliance
REACh substances of high concern (SVHC) information is available for this product. Since the European Chemicals Agency (ECHA) has published
notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact our office at SemiQ Headquarters in Lake
Forest, California to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also
available upon request.
SemiQ Inc., reserves the right to make changes to the product specifications and data in this document without notice. SemiQ products are sold
pursuant to SemiQ’s terms and conditions of sale in place at the time of order acknowledgement.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in
applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in
the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or
communication or control systems, or air traffic control.
SemiQ makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SemiQ assume
any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. Buyer is responsible for its products and applications using SemiQ products.
To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by
SemiQ. SemiQ reserves the right to make changes, corrections, modifications, and improvements of datasheet without notice.
Rev. 1.3, 5/15/2020
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p.6