GHXS060B120S-D3

GHXS060B120S-D3 1200V SiC Power Module Dual Diode Pack Features VDC 1200 V IF 60 A Tj,max 175 °C Package • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation Parallel Benefits • Outstanding performance at high frequency operation • Low loss and low EMI noise • Very rugged and easy mount • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VF Part # Package Marking GHXS060B120S-D3 SOT-227 GHXS060B120S-D3 • RoHS compliant Applications • DC power supply • Induction heater • Welding equipment • Charging station Maximum Ratings, at Tj=25 °C, unless otherwise specified (per leg) Characteristics Continuous forward current IF Surge non-repetitive forward current sine halfwave IFSM Non-repetitive peak forward current IF,max i 2t value i 2dt Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating junction temperature Storage temperature  Rev. 1.1, 1/21/2020 Conditions Symbol Value TC=25 °C, Tj=175 °C 114 TC=125 °C, Tj=175 °C 60 TC=150 °C, Tj=175 °C 38 TC=25 °C, Tj=25 °C, tp=8.3 ms 500 TC=110 °C, Tj=110 °C, tp=8.3 ms 430 TC=25 °C, tp=10 μs 1200 Unit A A A TC=25 °C, tp=8.3 ms 1038 TC=110 °C, tp=8.3 ms 767 VRRM Tj≥25 °C 1200 V dv/dt Turn-on slew rate, repetitive 200 V/ns TC=25 °C 375 W Tj -55…175 °C Tstorage -55…150 °C Ptot www.SemiQ.com A2s p.1 GHXS060B120S-D3 1200V SiC Power Module Electrical Characteristics, at Tj=25 °C, unless otherwise specified (per leg) Characteristics VF Diode forward voltage IR Reverse current QC Total capacitive charge Total capacitance min. IR=120µA, Tj=25 °C VDC DC blocking voltage Values Conditions Symbol C typ. max. 1200 - - IF=60A, Tj=25 °C - 1.50 1.65 IF=60A, Tj=125 °C - 1.83 - IF=60A, Tj=175 °C - 2.12 2.70 4 120 V V VR=1200V, Tj=25 °C - VR=1200V, Tj=125 °C - 42 - VR=1200V, Tj=175 °C - 185 1800 VR=800V, Tj=25 °C - 343 - VR=1V, f=1 MHz - 3828 - VR=400V, f=1 MHz - 323 - VR=800V, f=1 MHz - 235 - Unit A nC pF Thermal and Package Characteristics, at Tj=25 °C, unless otherwise specified Symbol Characteristics RthJC Thermal resistance, junction-case Values Conditions Per leg min. typ. max. - 0.27 0.40 Unit o Mounting torque Md M4-0.7 screws 1.1 - 1.5 C/W N-m Terminal connection torque Mdt M4-0.7 screws - 1.1 1.3 N-m Package weight Wt - 32 - g 2500 - - V IISOL < 1mA, 50/60 Hz, 1 min VISOL Isolation voltage Typical Performance Per Leg 100 1.E‐03 ‐55C 90 ‐55C 25C 25C 80 75C 125C 125C 70 175C 175C 1.E‐05 IR (A) 60 IF (A) 1.E‐04 75C 50 40 1.E‐06 30 20 1.E‐07 10 0 1.E‐08 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 VF (V) 400 600 800 1,000 1,200 VR (V) Fig. 1 Forward Characteristics (parameterized on Tj)  Rev. 1.1, 1/21/2020 200 Fig. 2 Reverse Characteristics (parameterized on Tj) www.SemiQ.com p.2 GHXS060B120S-D3 1200V SiC Power Module 400 500 Duty cycle 450 350 100% 70% 50% 400 300 30% 350 20% 10% 300 IF (A) PTotal (W) 250 200 250 200 150 150 100 100 50 50 Tj=175 oC Tj=175 oC 0 0 25 75 125 175 25 45 65 85 TC (oC) 105 125 145 165 TC (oC) Fig. 3 Power Derating Fig. 4 Current Derating 4000 500 Tj=25 oC 3500 Tj=25 oC 450 400 3000 350 300 QC (nC) C (pF) 2500 2000 250 200 1500 150 1000 100 500 50 0 0 1 10 100 1000 0 200 400 VR (V) Fig. 5 Capacitance  Rev. 1.1, 1/21/2020 600 800 1000 1200 VR (V) Fig. 6 Capacitive Charge www.SemiQ.com p.3 1200V SiC Power Module GHXS060B120S-D3 200 1E+00 Tj=25 oC 180 160 Normalized Zthjc 140 EC (μJ) 120 100 80 D=0.50 1E‐01 D=0.30 D=0.10 D=0.05 D=0.02 D=0.01 1E‐02 60 Single Pulse 40 20 0 0 200 400 600 800 1000 1E‐03 1E‐06 1200 1E‐04 VR (V) Fig. 7 Typical Capacitance Stored Energy 1E‐02 1E+00 1E+02 Pulse Width (s) Fig. 8 Transient Thermal Impedance Package Dimensions SOT-227 Sym A B C D E F G H I J K L M N O P Q R S T U V W X Y Z  Rev. 1.1, 1/21/2020 www.SemiQ.com Millimeters Max Min 31.67 31.90 8.18 7.95 4.24 4.14 4.24 4.14 4.24 4.14 14.94 15.09 30.15 30.25 38.00 38.10 4.83 4.75 11.68 12.19 9.60 9.45 0.84 0.76 12.62 12.88 25.15 25.30 24.79 25.04 3.15 3.02 6.96 6.71 4.42 4.17 2.13 2.08 3.63 3.28 26.75 26.90 4.24 3.86 20.55 26.90 5.85 5.45 3.66 3.15 0.13 0.00 Inches Min Max 1.247 1.256 0.313 0.322 0.163 0.167 0.163 0.167 0.163 0.167 0.588 0.594 1.187 1.191 1.496 1.500 0.187 0.190 0.460 0.480 0.372 0.378 0.030 0.033 0.497 0.507 0.990 0.996 0.976 0.986 0.119 0.124 0.264 0.274 0.164 0.174 0.082 0.084 0.129 0.143 1.053 1.059 0.152 0.167 0.809 0.814 0.215 0.230 0.124 0.144 0.000 0.005 p.4 GHXS060B120S-D3 1200V SiC Power Module Revision History Date 11/8/2019 1/16/2020 Revision 1.0 1.1 Notes Initial release Applied company name change Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, 2013. RoHS Declarations for this product can be obtained from the Product Documentation sections of www.SemiQ.com. REACh Compliance REACh substances of high concern (SVHC) information is available for this product. Since the European Chemicals Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact our office at SemiQ Headquarters in Lake Forest,  California to insure you get the most up‐to‐date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. SemiQ Inc., reserves the right to make changes to the product specifications and data in this document without notice.  SemiQ products are sold  pursuant to SemiQ’s terms and conditions of sale in place at the time of order acknowledgement. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in  applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in  the operation of nuclear facilities, life‐support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or  communication or control systems, or air traffic control.  SemiQ makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SemiQ  assume  any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  special, consequential or incidental damages. Buyer is responsible for its products and applications using SemiQ products. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by  SemiQ. SemiQ reserves the right to make changes, corrections, modifications, and improvements of datasheet without notice.  Rev. 1.1, 1/21/2020 www.SemiQ.com p.5