GP3D020A120U

GP3D020A120U 1200V SiC Schottky Diode Amp+ TM VDC QC IF 1200 V 112 nC*** 20 A*** Tj,max 175 °C Package Features • Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ per leg* • All parts tested to greater than 1,400V Amp+ TM Benefits • Near zero switching loss • Higher efficiency • Smaller heat sink • Easy to parallel Amp+ TM Applications Part # Package Marking GP3D020A120U TO-247-3L 3D020A120 • Solar Inverters • Switch mode power supplies, UPS • Power factor correction • EV charging stations Maximum Ratings, at Tj=25 °C, unless otherwise specified Characteristics Per Leg Continuous forward current Symbol IF** Surge non-repetitive forward current sine halfwave IFSM Non-repetitive peak forward current IF,max Conditions Values TC=25 °C, Tj=175 °C 34 TC=125 °C, Tj=175 °C 18 TC=150 °C, Tj=175 °C 12 TC=25 °C, tp=8.3 ms 120 TC=110 °C, tp=8.3 ms 110 TC=25 °C, tp=10 μs 700 TC=25 °C, tp=8.3 ms 60 TC=110 °C, tp=8.3 ms 50 Unit A A A i 2t value i 2dt Repetitive peak reverse voltage VRRM Tj=25 °C 1200 V Diode dv/dt ruggedness dv/dt Turn-on slew rate, repetitive 200 V/ns Power dissipation Ptot** TC=25 °C 177 W -55…175 °C Operating junction & storage temperature Soldering temperature Mounting torque Tj, Tstorage Continuous Tsolder Wave soldering leads M3 Screw A2 s 260 °C 1 N-m Notes: * EAS of 125 mJ is based on starting Tj = 25°C, L = 1.0 mH, IAS = 15.81 A, V = 50 V. ** Typical RthJC used *** Per Device Rev. 1.2, 4/17/2020 www.SemiQ.com p.1 1200V SiC Schottky Diode GP3D020A120U Amp +TM Electrical Characteristics, at Tj=25 °C, unless otherwise specified Characteristics Per Leg Symbol Values Conditions typ. max. - - V V DC blocking voltage VDC Tj=25 °C 1200 Breakdown voltage VBR IR=1.00mA, Tj=25 °C VF Diode forward voltage IR Reverse current Total capacitive charge QC Total capacitance C Unit min. 1400 - - IF=10A, Tj=25 °C - 1.50 1.65 IF=10A, Tj=125 °C - 1.83 - IF=10A, Tj=175 °C - 2.11 2.70 VR=1,200V, Tj=25 °C - 2 20 VR=1,400V, Tj=25 °C - 7 - VR=1,200V, Tj=125 °C - 11 - VR=1,200V, Tj=175 °C - 39 300 VR=800V, Tj=25 °C - 56 - VR=1V, f=1 MHz - 608 - VR=400V, f=1 MHz - 53 - VR=800V, f=1 MHz - 39 - V mA nC pF Thermal Characteristics Characteristics Per Leg Thermal resistance, junction-case Symbol Conditions RthJC - Values min. typ. max. - 0.85 1.11 Unit o C/W Typical Performance Per Leg 20 1.E-03 -55C 18 -55C 25C 25C 16 75C 75C 125C 125C 14 175C 175C 1.E-05 IR (A) 12 IF (A) 1.E-04 10 8 1.E-06 6 4 1.E-07 2 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 VF (V) 400 600 800 1,000 1,200 VR (V) Fig. 1 Forward Characteristics (parameterized on Tj) Rev. 1.2, 4/17/2020 200 Fig. 2 Reverse Characteristics (parameterized on Tj) www.SemiQ.com p.2 1200V SiC Schottky Diode GP3D020A120U Amp +TM 2,000 200 -55C 1,800 180 25C 1,600 160 75C 125C 1,400 140 175C PTotal (W) IR (µA) 1,200 1,000 800 120 100 80 600 60 400 40 200 20 Tj=175 oC 0 0 200 400 600 25 800 1,000 1,200 1,400 1,600 1,800 2,000 75 Fig. 3 Reverse Characteristics (parameterized on Tj) 175 Fig. 4 Power Derating 180 800 Duty cycle 160 100% Tj=25 oC 700 70% 50% 140 600 30% 20% 120 500 10% 100 C (pF) IF (A) 125 TC (oC) VR (V) 80 400 300 60 200 40 100 20 Tj=175 oC 0 0 25 45 65 85 105 125 145 165 1 Fig. 5 Capacitance Rev. 1.2, 4/17/2020 10 100 1000 VR (V) TC (oC) Fig. 6 Capacitance www.SemiQ.com p.3 1200V SiC Schottky Diode GP3D020A120U Amp +TM 80 35 Tj=25 oC 70 Tj=25 oC 30 60 25 EC (μJ) QC (nC) 50 40 20 15 30 10 20 5 10 0 0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 VR (V) VR (V) Fig. 7 Capacitive Charge Fig. 8 Typical Capacitance Stored Energy Normalized Zthjc 1E+00 D=0.50 1E-01 D=0.30 D=0.10 D=0.05 D=0.02 D=0.01 1E-02 1E-03 1E-06 Single Pulse 1E-04 1E-02 1E+00 1E+02 Pulse Width (s) Fig. 9 Transient Thermal Impedance Rev. 1.2, 4/17/2020 www.SemiQ.com p.4 1200V SiC Schottky Diode GP3D020A120U Amp +TM Package Dimensions TO-247-3L Sym A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 ØP ØP1 Q S Millimeters Max Min 5.31 4.70 2.59 2.21 2.49 1.50 1.40 0.99 2.39 1.65 3.43 2.59 0.89 0.38 20.80 21.46 13.08 17.65 1.35 0.51 15.49 16.26 13.46 14.16 5.49 3.43 5.44 BSC 19.81 20.32 4.50 4.10 3.66 3.56 7.39 7.06 6.20 5.39 6.30 6.04 Inches Min Max 0.185 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.819 0.845 0.515 0.695 0.020 0.053 0.610 0.640 0.530 0.557 0.135 0.216 0.214 BSC 0.780 0.800 0.161 0.177 0.140 0.144 0.278 0.291 0.212 0.244 0.238 0.248 Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, 2013. RoHS Declarations for this product can be obtained from the Product Documentation sections of www.SemiQ.com. REACh Compliance REACh substances of high concern (SVHC) information is available for this product. Since the European Chemicals Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact our office at SemiQ Headquarters in Lake Forest, California to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. SemiQ Inc., reserves the right to make changes to the product specifications and data in this document without notice. SemiQ products are sold pursuant to SemiQ’s terms and conditions of sale in place at the time of order acknowledgement. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control. SemiQ makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SemiQ assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using SemiQ products. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by SemiQ. SemiQ reserves the right to make changes, corrections, modifications, and improvements of datasheet without notice. Rev. 1.2, 4/17/2020 www.SemiQ.com p.5