PHD13005,127

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved” If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors PHD13005 NPN power transistor with integrated diode Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 plastic package. 1.2 Features and benefits „ Fast switching „ Integrated anti-parallel E-C diode „ High voltage capability „ Low thermal resistance 1.3 Applications „ Integrated fluorescent lamp ballasts e.g. high power cluster lamps „ Remote fluorescent lamp ballasts „ Self Oscillating Power Supplies „ Low Voltage Tungsten Halogen transformers 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IC collector current see Figure 1; see Figure 2; see Figure 4; DC - - 4 A Ptot total power dissipation see Figure 3; Tmb ≤ 25 °C - - 75 W VCESM collector-emitter peak voltage VBE = 0 V - - 700 V VCE = 5 V; IC = 1.0 A; see Figure 10 12 20 40 VCE = 5 V; IC = 2.0 A; see Figure 10 10 17 28 Static characteristics hFE DC current gain PHD13005 NXP Semiconductors NPN power transistor with integrated diode 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector Simplified outline Graphic symbol mb 3 E emitter mb C mounting base; connected to collector C B E sym131 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package PHD13005 Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCESM collector-emitter peak voltage VBE = 0 V - 700 V VCBO collector-base voltage IE = 0 A - 700 V VCEO collector-emitter voltage IB = 0 A - 400 V IC collector current DC; see Figure 1; see Figure 2; see Figure 4 - 4 A ICM peak collector current see Figure 4; see Figure 1; see Figure 2 - 8 A IB base current DC - 2 A IBM peak base current - 4 A Ptot total power dissipation Tmb ≤ 25 °C; see Figure 3 - 75 W Tstg storage temperature -65 150 °C Tj junction temperature - 150 °C PHD13005 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 2 of 14 PHD13005 NXP Semiconductors NPN power transistor with integrated diode 003aad544 8 VCC IC (A) LC 6 VCL(CE) probe point LB IBon VBB DUT VBE = −5V 001aab999 4 2 0 0 Fig 1. 200 400 600 800 VCL(CE) (V) Reverse bias safe operating area Fig 2. Test circuit for reverse bias safe operating area 03aa13 120 Pder (%) 80 40 0 0 50 100 150 200 Th (°C) Fig 3. Normalized total power dissipation as a function of heatsink temperature PHD13005 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 PHD13005 NXP Semiconductors NPN power transistor with integrated diode 001aai071 102 IC (A) duty cycle = 0.01 10 ICM(max) IC(max) (4) (1) tp = 20 μs 50 μs 100 μs 200 μs 500 μs DC 1 (2) 10−1 (3) 10−2 (5) 10−3 1 102 10 103 VCL(CE) (V) Th ≤ 25 °C Mounted with heatsink compound and (30 ± 5) N force on the centre of the envelope (1) Ptot maximum and Ptot peak maximum lines (2) Second breakdown limits (3) Region of permissible DC operation (4) Extension of operating region for repetitive pulse operation (5) Extension of operating region during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs Fig 4. Forward bias safe operating area PHD13005 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 PHD13005 NXP Semiconductors NPN power transistor with integrated diode 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-mb) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from junction to mounting see Figure 5 base - - 1.67 K/W thermal resistance from junction to ambient - 60 - K/W in free air 003aad543 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 0.05 0.02 10−1 δ= P tp 1/f 0.01 t tp 1/f 10−2 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration PHD13005 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 PHD13005 NXP Semiconductors NPN power transistor with integrated diode 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics ICES ICBO collector-emitter cut-off current VBE = 0 V; VCE = 700 V; Tj = 100 °C [1] - - 5 mA VBE = 0 V; VCE = 700 V [1] - - 1 mA collector-base cut-off current VCB = 700 V; IE = 0 A [1] - - 1 mA [1] - - 0.1 mA ICEO collector-emitter cut-off current VCE = 400 V; IB = 0 A IEBO emitter-base cut-off current VEB = 9 V; IC = 0 A - - 10 mA VCEOsus collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; LC = 25 mH; see Figure 6; see Figure 15 400 - - V VCEsat collector-emitter saturation voltage IC = 1.0 A; IB = 0.2 A; see Figure 7; see Figure 8 - 0.1 0.5 V IC = 2.0 A; IB = 0.5 A; see Figure 7; see Figure 8 - 0.2 0.6 V IC = 4.0 A; IB = 1.0 A; see Figure 7; see Figure 8 - 0.3 1 V base-emitter saturation voltage IC = 2.0 A; IB = 0.5 A; see Figure 9 - 0.92 1.6 V IC = 1.0 A; IB = 0.2 A; see Figure 9 - 0.85 1.2 V VF forward voltage IF = 2.0 A - 1.04 1.5 V hFE DC current gain VBEsat IC = 1.0 A; VCE = 5 V; see Figure 10 12 20 40 IC = 2.0 A; VCE = 5 V; see Figure 10 10 17 28 IC = 2.0 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; inductive load; see Figure 11; see Figure 12 - 1.2 2 µs IC = 2.0 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 Ω; resistive load; see Figure 13; see Figure 14 - 2.7 4 µs IC = 2.0 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 100 °C; inductive load; see Figure 11; see Figure 12 - 1.4 4 µs IC = 2.0 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 Ω; resistive load; see Figure 13; see Figure 14 - 0.3 0.9 µs IC = 2.0 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 100 °C; inductive load; see Figure 11; see Figure 12 - 0.16 0.9 µs IC = 2.0 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; inductive load; see Figure 11; see Figure 12 - 0.1 0.5 µs Dynamic characteristics storage time ts tf [1] fall time measured with half-sine wave voltage (curve tracer) PHD13005 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 6 of 14 PHD13005 NXP Semiconductors NPN power transistor with integrated diode 50 V 100 Ω to 200 Ω 003aad540 2.0 VCEsat (V) horizontal IC = 1 A 2A 3A 4A 1.6 oscilloscope vertical 1.2 6V 300 Ω 1Ω 0.8 30 Hz to 60 Hz 001aab987 0.4 0 10−2 10−1 1 10 IB (A) Fig 6. Test circuit for collector-emitter sustaining voltage 003aad542 Fig 7. Collector-emitter saturation voltage; typical values VCEsat (V) 1.0 1.4 VBEsat (V) 1.2 0.8 1.0 003aad541 0.8 0.6 0.6 0.4 0.4 0.2 0 10−1 0.2 1 0 10−1 10 IC (A) Fig 8. Product data sheet 10 IC (A) Collector-emitter saturation voltage as a function of collector current; typical values PHD13005 1 Fig 9. Base-emitter saturation voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 7 of 14 PHD13005 NXP Semiconductors NPN power transistor with integrated diode VCC 003aad539 102 LC hFE VCE = 5 V LB IBon VBB 1V DUT 10 001aab991 1 10−2 10−1 1 10 IC (A) Fig 10. DC current gain as a function of collector current; typical values Fig 11. Test circuit for inductive load switching IC VCC ICon 90 % RL VIM 0 RB DUT tp T 001aab989 10 % tf IB t ts toff IBon t −IBoff 001aab992 Fig 12. Switching times waveforms for inductive load PHD13005 Product data sheet Fig 13. Test circuit for resistive load switching All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 8 of 14 PHD13005 NXP Semiconductors NPN power transistor with integrated diode IC ICon 90 % 90 % 10 % t tf ts IB ton toff IBon 10 % t tr ≤ 30 ns −IBoff 001aab990 Fig 14. Switching times waveforms for resistive load 001aab998 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10−1 0.05 0.02 δ= Ptot tp T 0.01 t tp T 10−2 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 15. Transient thermal impedance from junction to mounting base as a function of pulse width PHD13005 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 9 of 14 PHD13005 NXP Semiconductors NPN power transistor with integrated diode 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig 16. Package outline SOT78 (TO-220AB) PHD13005 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 10 of 14 PHD13005 NXP Semiconductors NPN power transistor with integrated diode 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PHD13005 v.2 20100729 Product data sheet - PHD13005 v.1 - - Modifications: PHD13005 v.1 PHD13005 Product data sheet • Various changes to content. 20100520 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 11 of 14 PHD13005 NXP Semiconductors NPN power transistor with integrated diode 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 9.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. PHD13005 Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 12 of 14 PHD13005 NXP Semiconductors NPN power transistor with integrated diode Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PHD13005 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 13 of 14 PHD13005 NXP Semiconductors NPN power transistor with integrated diode 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 29 July 2010 Document identifier: PHD13005