BUJ105AD,118

BUJ105AD Silicon diffused power transistor Rev. 4 — 13 July 2018 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features and benefits  Low thermal resistance  Fast switching 1.3 Applications  Electronic lighting ballast  Inverters  DC-to-DC converters  Motor control systems 1.4 Quick reference data  VCESM  700 V  Ptot  80 W  IC  8 A  hFEsat = 11 (typ) 2. Pinning information Table 1. Pinning Pin Description 1 base 2 collector 3 emitter mb mounting base; connected to collector Simplified outline Symbol mb [1] 2 1 3 sym056 DPAK (SOT428) [1] It is not possible to make a connection to pin 2 of the SOT428 (D-PAK) package. BUJ105AD WeEn Semiconductors Silicon diffused power transistor 3. Ordering information Ordering information Table 2. Type number Package BUJ105AD Name Description Version D-PAK plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT428 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCESM peak collector-emitter voltage VBE = 0 V - 700 V VCEO collector-emitter voltage open base - 400 V VCBO collector-base voltage open emitter - 700 V IC collector current (DC) - 8 A ICM peak collector current - 16 A IB base current (DC) - 4 A IBM peak base current - 8 A Ptot total power dissipation - 80 W Tstg storage temperature 65 +150 C Tj junction temperature - 150 C Tmb =  25 C; see Figure 1 001aab993 120 Pder (%) 80 40 0 0 40 80 120 160 Tmb (°C) P tot P der  %  = -------------------------  100% P tot  25 C  Fig 1. Normalized total power dissipation as a function of mounting base temperature BUJ105AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev.4 13 July 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 10 BUJ105AD WeEn Semiconductors Silicon diffused power transistor 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from junction to mounting base see Figure 2 [1] thermal resistance from junction to ambient Rth(j-a) Min Typ Max Unit - - 1.56 K/W - 75 - K/W Device mounted on a printed-circuit board; minimum footprint [1] 001aab998 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 0.05 0.02 10−1 δ= Ptot tp T 0.01 t tp T 10−2 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 2. Transient thermal impedance from junction to mounting base as a function of pulse duration 6. Characteristics Table 5. Characteristics Tmb = 25 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics ICES ICBO collector-emitter cut-off current collector-base cut-off current VBE = 0 V; VCE = VCESMmax [1] - - 0.2 mA VBE = 0 V; VCE = VCESMmax; Tj = 125 C [1] - - 0.5 mA VBE = 0 V; VCE = VCESMmax [1] - - 0.2 mA [1] - - 0.1 mA ICEO collector-emitter cut-off current VCEO = VCEOMmax = 400 V IEBO emitter-base cut-off current VEB = 9 V; IC = 0 A - - 1 mA VCEOsus collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; L = 25 mH; see Figure 3 and 4 400 - - V VCEsat collector-emitter saturation voltage IC = 4.0 A; IB = 0.8 A; see Figure 11 - 0.3 1.0 V VBEsat base-emitter saturation voltage IC = 4.0 A; IB = 0.8 A; see Figure 12 - 1.0 1.5 V hFE DC current gain IC = 1 mA; VCE = 5 V 10 14 34 IC = 500 mA; VCE = 5 V; see Figure 10 13 23 36 IC = 4.0 A; VCE = 5 V 8 11 15 hFEsat DC saturation current gain BUJ105AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev.4 13 July 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 10 BUJ105AD WeEn Semiconductors Silicon diffused power transistor Table 5. Characteristics …continued Tmb = 25 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Switching times (resistive load); see Figure 5 and 6 ICon = 5 A; IBon = IBoff = 1 A; RL = 75  ton turn-on time - 0.65 1 s tstg storage time - 1.8 2.5 s tf fall time - 0.3 0.5 s Switching times (inductive load); see Figure 7 and 8 tstg storage time tf fall time ICon = 5 A; IBon = 1 A; LB = 1 H; VBB = 5 V - 1.2 1.7 s - 20 50 ns - 1.4 1.9 s - 25 100 ns Switching times (inductive load); see Figure 7 and 8 tstg storage time tf fall time [1] ICon = 5 A; IBon = 1 A; LB = 1 H; VBB = 5 V; Tj = 100 C Measured with half sine-wave voltage (curve tracer). IC (mA) 50 V 100 Ω to 200 Ω 250 horizontal oscilloscope vertical 100 6V 300 Ω 1Ω 30 Hz to 60 Hz 001aab987 10 0 min VCE (V) VCEOsus 001aab988 Fig 3. Test circuit for collector-emitter sustaining voltage BUJ105AD Product data sheet Fig 4. Oscilloscope display for collector-emitter sustaining voltage test waveform All information provided in this document is subject to legal disclaimers. Rev.4 13 July 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 10 BUJ105AD WeEn Semiconductors Silicon diffused power transistor IC ICon 90 % 90 % VCC RL VIM 0 10 % RB t DUT tf tp ts IB ton T toff 001aab989 IBon 10 % t VIM = 6 V to +8 V; VCC = 250 V; tp = 20 s;  = tp/T = 0.01. tr ≤ 30 ns −IBoff RB and RL calculated from ICon and IBon requirements. Fig 5. Test circuit for resistive load switching Fig 6. 001aab990 Switching times waveforms for resistive load IC ICon 90 % VCC LC 10 % IBon VBB LB DUT tf ts toff IB 001aab991 t IBon t −IBoff VCC = 300 V; VBB = 5 V; LC = 200 H; LB = 1 H. Fig 7. Test circuit for inductive load switching BUJ105AD Product data sheet 001aab992 Fig 8. Switching times waveforms for inductive load All information provided in this document is subject to legal disclaimers. Rev.4 13 July 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 / 10 BUJ105AD WeEn Semiconductors Silicon diffused power transistor 001aac045 102 Tj = 100 °C 25 °C hFE 1 10−2 Tj = 100 °C 25 °C hFE −40 °C 10 001aac046 102 −40 °C 10 10−1 1 1 10−2 10 10−1 1 IC (A) Fig 9. DC current gain as a function of collector current; typical values at VCE = 1 V 001aab995 2.0 VCEsat (V) IC = 1 A 2A 3A 10 IC (A) Fig 10. DC current gain as a function of collector current; typical values at VCE = 5 V 001aac047 1.3 VBEsat (V) 4A 1.6 1.1 1.2 Tj = −40 °C 0.9 0.8 25 °C 0.7 100 °C 0.4 0 10−2 10−1 1 10 0.5 10−1 1 IB (A) Tj = 25 C. IC/IB = 4. Fig 11. Collector-emitter saturation voltage as a function of base current; typical values BUJ105AD Product data sheet 10 IC (A) Fig 12. Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev.4 13 July 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 / 10 BUJ105AD WeEn Semiconductors Silicon diffused power transistor 001aac048 0.6 VCEsat (V) VCC 0.4 LC Tj = 100 °C 25 °C −40 °C 0.2 IBon VBB VCL(CE) probe point LB DUT 001aab999 0 10−1 1 10 IC (A) VCEclamp < 700 V; VCC = 150 V; VBB = 5 V, 3 V and 1 V; LB = 1 H; LC = 200 H. IC/IB = 4. Fig 13. Collector-emitter saturation voltage as a function of collector current; typical values Fig 14. Test circuit for reverse bias safe operating area 001aac049 10 IC (A) 8 6 VBB = −5 V −3 V 4 −1 V 2 0 0 200 400 600 800 VCEclamp (V) Tj < Tj(max). Fig 15. Reverse bias safe operating area 7. Package information Epoxy meets requirements of UL94 V-0 at 1⁄8 inch. BUJ105AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev.4 13 July 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 / 10 BUJ105AD WeEn Semiconductors Silicon diffused power transistor 8. Package outline Fig. 15. Package outline DPAK (SOT428) BUJ105AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev.4 13 July 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8 / 10 BUJ105AD WeEn Semiconductors Silicon diffused power transistor 9. 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Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Please consult the most recently issued document before initiating or completing a design. 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Rev.4 13 July 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 / 10 BUJ105AD WeEn Semiconductors Silicon diffused power transistor Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BUJ105AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev.4 13 July 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 10 / 10